AD ADL5570

2.3 GHz to 2.4 GHz
WiMAX Power Amplifier
ADL5570
Preliminary Technical Data
FUNCTIONAL BLOCK DIAGRAM
FEATURES
Fixed gain of 29 dB
Operation from 2.3 GHz to 2.4 GHz
EVM ≤3% with 16 QAM OFDMA
@ POUT = 25 dBm [3.5V] and
@ POUT = 27.5 dBm [5V]
Input internally matched to 50 Ω
Power supply: 3.2 V to 5.5 V
Quiescent current
130 mA in high power mode
70 mA in low power mode
PAE: >20%
Multiple operating modes to reduce battery drain
Low power mode: 100 mA (Operating)
Standby mode: 10 mA
Sleep mode: < 1 μA
APPLICATIONS
VCC
VCC1
RFIN
STBY
IM1
1st stage
Bias_1
IM2
2nd stage
Bias_2
VCC
VCC2
IM3
3rd stage
RFOUT
OM
Bias_3
VREG
CFLT
MODE
Figure 1.AD5570 Block Diagram
WiMAX/WiBro Mobile Terminals and CPEs
Good performance from 2.5Ghz to 2.7Ghz - See Page 7
GENERAL DESCRIPTION
The ADL5570 is a high linearity 2.3 GHz to 2.4 GHz power
amplifier designed for WiMAX terminals and CPEs using TDD
operation at a duty cycle of 50% or lower. With a gain of 29 dB
and an output compression point of 31 dBm , it can operate at
an output power level up to 26 dBm while maintaining an EVM
of ≤3% with a supply voltage of 3.5V. PAE is greater than 20% at
POUT = 25 dBm with a 3.5V supply voltage.
The ADL5570 RF input is matched on chip and provides an
input return loss of less than −10 dB. The open-collector output
is externally matched with strip-line and external shunt
capacitance.
The ADL5570 operates over a supply voltage range from 3.2 V
to 5.5 V with a supply current of 400mA Burst RMS when
delivering 25 dBm (3.5 V supply). A low power mode is also
available for operation at power levels ≤10 dBm with optimized
operating and quiescent currents of 100 and 70 mA,
respectively. A Standby mode is available which reduces the
quiescent current to 10 mA: useful when a TDD terminal is
receiving data.
The ADL5570 is fabricated in a GaAs HBT process and is
packaged in a 4mm x 4mm 16-Lead Pb-free RoHS compliant
LFCSP that uses an exposed paddle for excellent thermal
impedance. It operates from −40°C to +85°C.
Rev. PrG
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rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
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Fax: 781.461.3113
©2007 Analog Devices, Inc. All rights reserved.
ADL5570
Preliminary Technical Data
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................5
Applications....................................................................................... 1
Typical Performance Characteristics ..............................................6
Functional Block Diagram .............................................................. 1
APPLICATIONS ...............................................................................7
General Description ......................................................................... 1
2.5 GHz to 2.7 Ghz Peformance ..................................................7
Revision History ............................................................................... 2
Evaluation Board ...............................................................................8
Target Specifications - VCC = 3.5 V .............................................. 3
Outline Dimensions ....................................................................... 10
Target Specifications - Vcc = 5 V.................................................... 4
REVISION HISTORY
3/07—Rev. PrF: Preliminary Version
Rev. PrG| Page 2 of 10
Preliminary Technical Data
ADL5570
TARGET SPECIFICATIONS - VCC = 3.5 V
T = 25°C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 Ω, MODE = 0 V, STBY = 0 V, VREG = 2.85 V,
33% duty cycle, unless otherwise noted.
Table 1.
Parameter
Frequency Range
Linear Output Power
Gain
vs. Frequency
vs. Temp
vs. Supply
OP1dB
EVM
Input Return Loss
Spectral Mask @ 25dBm
Output Power
Harmonic Distortion
Power Supply Interface
Supply Current
PAE
Standby Mode
Sleep Mode
Turn On/Off Time
VSWR Survivability
Conditions
See table 5 for tuning details
Min
2.3
MODE = 0 V, EVM ≤ 3%
MODE = 2.5 V, EVM ≤ 3%
±5 MHz
−40°C ≤ TA ≤ +85°C
3.2 V to 4.2 V
Unmodulated input
POUT = 25 dBm
±5 MHz carrier offset
±6 MHz carrier offset
±10.5 MHz carrier offset
±20 MHz carrier offset
VCC = 3.5 V
POUT = 25 dBm, MODE= 0 V.
POUT = 12 dBm, MODE= 2.5 V.
POUT = 25 dBm, MODE= 0 V
VREG = 2.85 V, STBY = 2.5 V
VREG = 0 V
10:1
Rev. PrG | Page 3 of 10
Typ
Max
2.4
25
10
29
±0.3
±0.5
±1
31
3
10
Unit
GHz
dBm
dBm
dB
dB
dB
dB
dBm
% rms
dB
35
37
41
51
36
dBc
dBc
dBc
dBc
dBc
250
100
>20
10
10
1
mA
mA
%
mA
μA
μs
ADL5570
Preliminary Technical Data
TARGET SPECIFICATIONS - VCC = 5 V
T = 25°C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 Ω, MODE = 0 V, STBY = 0 V, VREG = 2.85 V,
33% duty cycle, unless otherwise noted.
Table 2.
Parameter
Frequency Range
Linear Output Power
Gain
vs. Frequency
vs. Temp
vs. Supply
OP1dB
EVM
Input Return Loss
Spectral Mask @ 25dBm
Output Power
Harmonic Distortion
Power Supply Interface
Supply Current
PAE
Standby Mode
Sleep Mode
Turn On/Off Time
VSWR Survivability
Conditions
See table 5 for tuning details
Min
2.3
±5MHz carrier offset
27.5
10
28
±0.3
±0.5
±1
32
3
10
38
Unit
GHz
dBm
dBm
dB
dB
dB
dB
dBm
% rms
dB
dBc
±6 MHz carrier offset
±10.5 MHz carrier offset
±20 MHz carrier offset
39
43
49
dBc
dBc
dBc
36
dBc
300
115
16
10
10
1
mA
mA
%
mA
μA
μs
MODE = 0 V, EVM ≤ 3%
MODE = 2.5 V, EVM ≤ 3 %
±5 MHz
−40°C ≤ TA ≤ +85°C
4.5 V to 5.5 V
Unmodulated input
POUT = 27.5 dBm
VCC = 5 V
POUT = 27.5 dBm, MODE = 0 V
POUT = 13 dBm, MODE = 2.5 V
POUT = 27.5 dBm, MODE = 0 V
VREG = 2.85 V, STBY = 2.5 V
VREG = 0 V
10:1
Rev. PrG| Page 4 of 10
Typ
Max
2.4
Preliminary Technical Data
ADL5570
2 VCC2
1 NC
15 RFOUT
14 RFOUT
13 NC
xxxx-xx
CFLT 9
VREG 8
TOP VIEW
(Not to Scale)
16 NC
NC 12
GND 7
ADL5570
NC 11
RFIN 6
PIN 1
INDICATOR
MODE 10
VCC1 5
3 GND
4 STBY
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. ADL5570 Pin Configuration
Table 3. Pin Function Descriptions
Pin No.
5
6
8
Mnemonic
VCC1
RFIN
VREG
9
CFLT
10
MODE
14, 15
RFOUT
2
4
VCC2
STBY
1, 11 to 13, 16
7
N/C
GND
Exposed
Paddle
Description
Connect to Power Supply.
Matched RF Input.
When VREG is low, the device goes into sleep mode, reducing supply current to 1 uA. When VREG is
high (2.85 V), the device operates in its normal transmit mode. When high, VREG draws a bias current of
approximately 10 mA.
A Ground Referenced Capacitor. It should be connected to this node to reduce bias line noise (see
figure 8).
Switches Between High Power and Low Power Modes. When MODE is low (0 V), the device operates in
high power mode. When MODE is high (2.5 V), the device operates in low power mode.
Unmatched RF Output. These parallel outputs can be matched to 50 Ω using strip-line and shunt
capacitance. The power supply voltage should be connected to these pins through a choke inductor.
This power supply pin should be connected to the supply via a choke circuit (see Figure 8).
When STBY is low (0 V), the device operates in transmit mode. When the radio is receiving data, STBY
can be taken high (2.5 V), reducing supply current to 10 mA.
No Connect. Do not connect these pins.
Connected to Ground.
The exposed paddle should be soldered down to a low impedance ground plane (use multiple vias (at
least 9) to stitch together the ground planes) for optimum electrical and thermal performance.
Table 4. Operating Modes 1
Mnemonic
VREG
MODE
STBY
1
Normal Operation
High
Low
Low
Low Power Mode, POUT ≤ 10dBm
High
High
Low
X = don’t care.
Rev. PrG | Page 5 of 10
Standby Mode
High
X
High
Sleep Mode
Low
X
X
ADL5570
Preliminary Technical Data
TYPICAL PERFORMANCE CHARACTERISTICS
T = 25°C, 1024 FFT, 16 QAM OFDMA modulated carrier, 10 MHz Channel BW, ZL = 50 Ω, MODE = 0 V, STBY = 0 V, VREG = 2.85 V,
33% duty cycle, unless otherwise noted.
0.8
31
0.7
30
0.6
29
0.5
28
GAIN (dB)
BURST RM S CURRENT (A)
Vcc=3.5V
0.4
0.3
Vcc=5V
27
26
25
0.2
24
0.1
23
2280
0
0
5
10
15
20
25
2300
2320
2340
30
2360
2380
2400
2420
FREQUENCY (Mhz)
OUTPUT POWER (dBm)
Figure 6. Gain vs. Frequency at PIN= −2 dBm
Figure 3.Burst RMS Current vs. POUT, at 2.35 GHz, Vcc=3.5V
10
9
31
8
7
29
6
28
5
27
4
GAIN (dB)
EVM (%)
Vcc =3.5V
30
Vcc =3.5V
3
Vcc = 5V
2
Vcc =5V
26
25
24
23
1
22
0
0
5
10
15
20
25
21
30
0
OUTPUT POWER (dBm)
5
10
15
20
25
30
OUTPUT POWER (dBm)
Figure 4. EVM vs. POUT at 2.35 GHz.
Figure 7. Gain vs Output Power at 2.35 GHz
13
12
11
EVM (%)
2 VCC2
8
16 NC
15 RFOUT
14 RFOUT
13 NC
7
6
5
2400 Mhz
4
xxxx-xx
CFLT
9
1 NC
4 STBY
TOP VIEW
(Not to Scale)
9
VREG 8
ADL5571
NC 12
GND 7
PIN 1
INDICATOR
NC 11
RFIN 6
MODE 10
05352-002
IFOP
VCC1 5
3 GND
10
TOP VIEW
(Not to Scale)
2350 Mhz
3
2300 Mhz
2
1
0
0
5
10
15
20
25
OUTPUT POWER (dBm)
Figure 5. WiMax Spectrum with FCC Spectral Mask limits applied at
2.35Ghz, Vcc=3.5V, Pout=25dBm.
Rev. PrG | Page 6 of 10
Figure 8.EVM vs. Output Power at Vcc=3.5V
30
35
Preliminary Technical Data
ADL5570
APPLICATIONS
2.5 GHZ TO 2.7 GHZ PEFORMANCE
10
30
9
29
8
28
7
27
G AIN (dB)
E V M (% )
The ADL5570 is optimized for superior performance within the 2.3 GHz to 2.4 GHz frequency band. With a change in the external
matching capacitor, C3, to 2.4pF, the ADL5570 shows good performance in the 2.5 GHz to 2.7 GHz frequency band. The EVM, Gain and
RMS current performance data are shown in Figure 9 and Figure 10.
6
5
2700Mhz
4
24
22
2500Mhz
2
25
23
2600Mhz
3
26
21
1
20
2450
0
0
5
10
15
20
25
30
2500
2550
2600
2650
2700
2750
FREQUENCY (Mhz)
OUTPUT POWER (dBm)
Figure 9. EVM vs Output power Perfomance at Vcc=3.5V and 16QAM
OFDMA Signal
Rev. PrG | Page 7 of 10
Figure 10. Gain vs Frequency Performance at Vcc=3.5V and 16QAM
OFDMA Signal
ADL5570
Preliminary Technical Data
EVALUATION BOARD
Figure 11. Evaluation Board Layout
The ADL5570 perfomance data were taken on a FR4 board layout. Care should be taken to ensure 50Ω impedance for all RF traces. For
optimal performance in linearity, gain and efficiency, the output matching capacitor, C3, should be placed 30 mils from the edge of the
package.
Rev. PrG | Page 8 of 10
Preliminary Technical Data
ADL5570
Table 5. Evaluation Board Configuration Options
Component
Vpos, Vpos1, GND
TP1(STBY)
TP2 (VREG)
TP5(MODE)
L3,
C3, C4,
Function
Supply and Ground Connections
Transmit/Standby Mode: When STBY is low (0 V), the device operates in
transmit mode. When the radio is receiving data, STBY can be taken high
(2.5 V), reducing supply current to 10 mA.
Normal/Sleep Mode: When VREG is low, the device goes into sleep mode,
reducing supply current to 10 uA. When VREG is high (2.85 V), the device
operates in its normal transmit mode. When high, VREG draws a bias current
of approximately 10 mA
High/Low Power Mode: Switches between High Power and Low Power
Modes. When Mode is low (0V), the device operates in High Power Mode.
When Mode is high (MODE = 2.5 V), the device operates in Low Power Mode.
Input Interface: (L3) matches the input to 50 ohms.
Default Value
W1 = Installed
Not Applicable
Output Interface: C4 provides dc blocking. C3 matches the output to 50
ohms.
C4 = 39pF (Size 0402)
C3 = 3.3pF (Size 0402)
Not Applicable
Not Applicable
L3 = 2.2nH (Size 0402)
(C3 value for 2.3 Ghz to 2.4Ghz
operation)
C2
C7, C8, C9, C10, C11, C12
L1, L2, C6, C5
Filter Interface: A ground referenced capacitor should be connected to this
node to reduce bias line noise
Power Supply Decoupling: The capacitors, C7, thru C12, are used for power
supply decoupling. They should be placed as close as possible to the DUT.
RF Trap: L1, C6 and L2, C5 form tank circuits and prevent RF from
propagating on the dc supply lines
Figure 12. Application Schematic
Rev. PrG | Page 9 of 10
C2 = 2.2pF (Size 0402)
C7 = 0.01μ F (Size 0402)
C8 = 0.01μ F (Size 0402)
C9 = 0.01μ F (Size 0402)
C10 = 0.01μ F (Size 0402)
C11 = 1μ F (Size 0402)
C12 = 1μ F (Size 0402)
L1 = 1nH (Size 0402)
C6 = 3.6pF (Size 0402)
L1 = 11nH (Size 0402)
C5 = OPEN
ADL5570
Preliminary Technical Data
OUTLINE DIMENSIONS
4.00
BSC SQ
PIN 1
INDICATOR
0.65 BSC
TOP
VIEW
12° MAX
3.75
BSC SQ
0.75
0.60
0.50
(BOTTOM VIEW)
13
12
9
8
16
PIN 1
INDICATOR
1
2.25
2.10 SQ
1.95
5
4
0.25 MIN
1.95 BSC
0.80 MAX
0.65 TYP
0.05 MAX
0.02 NOM
SEATING
PLANE
0.35
0.30
0.25
0.20 REF
COPLANARITY
0.08
COMPLIANT TO JEDEC STANDARDS MO-220-VGGC
Figure 13. 16-Lead Lead Frame Chip Scale Package [LFCSP_VQ]
4 mm x 4 mm Body, Very Thin Quad
(CP-16-4)
Dimensions shown in millimeters
©2007 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR06729-0-4/07(PrG)
Rev. PrG | Page 10 of 10
021207-A
1.00
0.85
0.80
0.60 MAX
0.60 MAX