RLT808-10MG ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION SYMBOL RATED VALUE Optical Power (mW) Po 10 Operation Temperature (oC) Top -10 to +50 Storage Temperature (oC) Tstg -40 to +85 LD Reverse Voltage (V) VLDR 2 PD Reverse Voltage (V) VPDR 30 Features • Index Guided MQW Structure • Wavelength : 808 nm (Typ.) • Optical Power : 10 mW CW • Threshold Current : 30 mA ( Typ. ) • Package Style : TO-18 (5.6 mmØ) OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION SYMBOL MIN. TYPICAL MAX. TEST CONDITION Lasing Wavelength (nm) λp 803 808 815 Po=10mW Threshold Current (mA) Ith 20 30 50 Po=10mW Operating Current (mA) Iop 30 50 70 Po=10mW Operating Voltage (V) Vop 1.8 2.0 2.5 Po=10mW Monitor Current (mA) Im 0.1 0.4 0.9 Po=10mW, VR=5V Slope Efficiency (mW/mA) η 0.5 0.7 0.9 *** Beam Divergence ⎪⎢ (°) θ⎪⎢ 8 10 12 Po=10mW Beam Divergence ⊥ (°) θ⊥ 25 30 40 Po=10mW Astigmatism (μm) As * 11 * Po=10mW, NA=0.4 03.08.2010 rlt808_10mg.doc 1 of 1