RLT6530G Visible Laser Diode ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC ) DESCRIPTION Features SYMBOL RATED VALUE • Index Guided MQW Structure Optical Power (mW) Po 30 • Wavelength : 655 nm (Typ.) Operation Temperature (ºC) Top -10 to +40 • Optical Power : 30 mW CW Storage Temperature (ºC) Tstg -40 to +85 • Threshold Current : 50 mA ( Typ. ) • LD Reverse Voltage (V) VLDR 2 Standard Package : 9.0 mm Ø PD Reverse Voltage (V) VPDR 30 OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC ) DESCRIPTION SYMBOL MIN. TYPICAL MAX. TEST CONDITION Lasing Wavelength (nm) λp 645 655 665 Po=30mW Threshold Current (mA) Ith 30 50 70 Po=30mW Operation Current (mA) Iop 60 80 100 Po=30mW Operation Voltage (V) Vop 2.0 2.2 2.7 Po=30mW Monitor Current (µA) Im 10 - - Po=30mW, VR=5V Slope Efficiency (mW/mA) ç 0.3 0.4 0.7 *** Beam Divergence ¦ (º) θ¦ 8 10 11 Po=30mW Beam Divergence ⊥ (º) θ⊥ 25 31 40 Po=30mW Astigmatism (µm) As *** 11 *** Po=30mW, NA=0.4