MMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Symbol Value Unit VDG 25 Vdc VGS(r) −25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1 DRAIN 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 1 2 PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. MARKING DIAGRAM 6Y MG G 1 6Y = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBFJ177LT1G Package Shipping† SOT−23 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 5 1 Publication Order Number: MMBFJ177LT1/D MMBFJ177LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit V(BR)GSS 30 − Vdc IGSS − 1.0 nAdc VGS(off) 0.8 2.5 Vdc Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2) IDSS 1.5 20 mAdc Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) ID(off) − 1.0 nAdc rDS(on) − 300 W Ciss − 11 pF Crss − 5.5 Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS Drain Source On Resistance (ID = 500 mAdc) Input Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz Reverse Transfer Capacitance 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%. TYPICAL CHARACTERISTICS 8 7 6 Crss, REVERSE TRANSFER CAPACITANCE (pF) VGS = −0.1 V VGS = −0.3 V 5 4 VGS = −0.5 V 3 VGS = −0.7 V 2 VGS = −0.9 V 1 0 0 2 4 6 8 10 10 8 6 4 2 0 12 VGS = 0 V f = 1 MHz 12 0 −5 −10 −15 −20 VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 1. Drain Current vs. Drain−Source Voltage Figure 2. Reverse Transfer Capacitance 32 Ciss, INPUT CAPACITANCE (pF) ID, DRAIN CURRENT (mA) 14 VGS = 0 V VGS = 0 V f = 1 MHz 28 24 20 16 12 8 4 0 0 −5 −10 −15 −20 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 3. Input Capacitance http://onsemi.com 2 −25 −25 MMBFJ177LT1G PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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