GaAs SP4T 2.5V High Power Switch DC - 3 GHz Preliminary Features GND V4 PIN 1 RF4 V1 RF1 Description 39 pF GND 39 pF The MASWSS0020 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Absolute Maximum Ratings 1 Parameter Absolute Maximum Max Input Power (0.5 - 3 GHz, 2.5V Control) +38 dBm Operating Voltage +8.5 volts Operating Temperature -40 oC to +85 oC o o -65 C to +150 C 1. Exceeding any one or combination of these limits may cause permanent damage. 39 pF 39 pF GND GND RF3 V3 GND RF2 V2 M/A-COM’s MASWSS0020 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost miniature FQFP 16-lead 4x4mm package. The MASWSS0020 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. Storage Temperature GND PIN 16 39 pF Low Voltage Operation 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss 0.6 dB at 1 GHz High Isolation 23 dB at 2 GHz Miniature FQFP 16-lead 4x4mm Package 0.5 micron GaAs pHEMT Process ANT • • • • • • Functional Schematic GND MASWSS0020 Jan 16 2002 Pin Configuration PIN No. PIN Name Description 1 V1 Control 1 2 RF1 RF Port 1 3 GND RF Ground 4 RF2 RF Port 2 5 GND RF Ground 6 V2 Control 2 7 V3 Control 3 8 GND RF Ground 9 RF3 RF Port 3 10 GND RF Ground 11 GND RF Ground 12 RF4 RF Port 4 13 GND RF Ground 14 V4 Control 4 15 GND RF Ground 16 ANT Antenna Port 17 GND (paddle) RF Ground GaAs SP4T 2.5V High Power Switch MASWSS0020 V 1.00 Electrical Specifications: TA = 25°C, Z0 = 50Ω 2 Parameter Test Conditions Units Insertion Loss DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB Isolation DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB Return Loss DC – 3 GHz dB 20 Two Tone +10dBm, 5 MHz Spacing, > 50 MHz Vc = 0V/2.5V dBm 57 Vc = 0V/2.5V dBm 38 2nd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 3rd Harmonic 1 GHz, PIN = +34 dBm, Vc = 0V/2.5V dBc 65 50% control to 90% RF, and 50% control to 10% RF uS 1 50 - 350 MHz uS 1 IP3 P1dB Trise, Tfall Ton, Toff Transients Min. 25 21 Typ. Max. 0.6 0.8 1.0 0.8 1.0 29 23 18.5 mV Gate Leakage |Vc| = 2.5V 10 uA 100 2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 GHz - 3 GHz. Truth Table 3 V1 V2 V3 V4 ANT– RF1 ANT - RF2 ANT - RF3 ANT - RF4 +2.5 to +5V 0 + 0.2V 0 + 0.2V 0 + 0.2V On Off Off Off 0 + 0.2V +2.5 to +5V 0 + 0.2V 0 + 0.2V Off On Off Off 0 + 0.2V 0 + 0.2V +2.5 to +5V 0 + 0.2V Off Off On Off 0 + 0.2V 0 + 0.2V 0 + 0.2V +2.5 to +5V Off Off Off On 3. External DC blocking capacitors are required on all RF ports 2 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP4T 2.5V High Power Switch MASWSS0020 V 1.00 Typical Performance Curves Insertion Loss vs. Frequency, 25 oC, 39 pF Isolation vs. Frequency, 25 oC, 39 pF -15 -0.5 -0.6 -20 -0.7 -25 -0.8 -30 -0.9 -35 -1 0.5 1 1.5 2 Frequency (GHz) 2.5 3 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Harmonic Rejection vs. Control Voltage, 25 oC, 39 pF -60 Pin = +34 dBm @ 1 GHz -65 -70 3rd Harmonic -75 2nd Harmonic -80 -85 2.2 2.4 2.6 2.8 3 Control Voltage (V) 3 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP4T 2.5V High Power Switch MASWSS0020 V 1.00 FQFP 16-lead 4x4 mm 4 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GaAs SP4T 2.5V High Power Switch MASWSS0020 V 1.00 Handling Procedures The following precautions should be observed to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices. Ordering Information Part Number Package MASWSS0020 FQFP-N 16-lead Plastic Package MASWSS0020TR 1000 piece reel MASWSS0020SMB Sample Test Board 5 Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information.