TOSHIBA TCV7101F

TCV7101F
TOSHIBA CMOS Integrated Circuit
Silicon Monolithic
TCV7101F
Buck DC-DC Converter IC
The TCV7101F is a single-chip buck DC-DC converter IC.
The TCV7101F contains high-speed and low-on-resistance power
MOSFETs to achieve synchronous rectification using an external
low-side MOSFET, or rectification using an external diode,
allowing for high efficiency.
Features
•
Enables up to 3.8 A of load current (IOUT) with a minimum of
external components.
•
High efficiency: η = 95% (typ.)
(@VIN = 5 V, VOUT = 3.3 V, IOUT = 1.5 A)
(when using the TPC6008-H as a low-side MOSFET)
HSON8-P-0505-1.27
Weight: 0.068 g (typ.)
•
Operating voltage range: VIN = 2.7 V to 5.5 V
•
Low ON-resistance: RDS (ON) = 0.08 Ω (high-side) typical (@VIN = 5 V, Tj = 25°C)
•
Oscillation frequency: fOSC = 600 kHz (typ.)
•
Feedback voltage: VFB = 0.8 V ± 1% (@ Tj = 25 °C)
•
Incorporates an N-channel MOSFET driver for synchronous rectification
•
Uses internal phase compensation to achieve high efficiency with a minimum of external components.
•
Allows the use of a small surface-mount ceramic capacitor as an output filter capacitor.
•
Housed in a small surface-mount package (SOP Advance) with a low thermal resistance.
•
Soft-start time adjustable by an external capacitor
Part Marking
Pin Assignment
Part Number (or abbreviation code)
LX
8
LSG
EN
7
6
VFB
5
Lot No.
TCV
7101F
The dot (•) on the top surface indicates pin 1.
*:
1
2
3
4
VIN1
VIN2
SS
GND
The lot number consists of three digits. The first digit represents the last digit of the year of manufacture, and the
following two digits indicates the week of manufacture between 01 and either 52 or 53.
Manufacturing week code
(The first week of the year is 01; the last week is 52 or 53.)
Manufacturing year code (last digit of the year of manufacture3
This product has a MOS structure and is sensitive to electrostatic discharge. Handle with care.
The product(s) in this document (“Product”) contain functions intended to protect the Product from temporary
small overloads such as minor short-term overcurrent, or overheating. The protective functions do not necessarily
protect Product under all circumstances. When incorporating Product into your system, please design the system (1)
to avoid such overloads upon the Product, and (2) to shut down or otherwise relieve the Product of such overload
conditions immediately upon occurrence. For details, please refer to the notes appearing below in this document and
other documents referenced in this document.
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TCV7101F
Ordering Information
Part Number
Shipping
TCV7101F (TE12L, Q)
Embossed tape (3000 units per reel)
Block Diagram
VIN2
VIN1
Current detection
Slope
compensation
ジ
Oscillator
Under
voltage
lockout
Driver
Control logic
LX
Constant-current
source (8 μA)
VFB
Short-Circuit
protection
Error amplifier
+
SS
Soft start
EN
+
-
LSG
Phase compensation
Ref. voltage (0.8 V)
GND
Pin Description
Pin No.
Symbol
1
VIN1
2
VIN2
Description
Input pin for the output section
This pin is placed in the standby state if VEN = low. Standby current is 10 μA or less.
Input pin for the control section
This pin is placed in the standby state if VEN = low. Standby current is 10 μA or less.
Soft-start pin
3
SS
4
GND
5
VFB
When the SS input is left open, the soft-start time is 1 ms (typ.). The soft-start time can be adjusted
with an external capacitor. The external capacitor is charged from a 8 μA (typ.) constant-current
source, and the reference voltage of the error amplifier is regulated between 0 V and 0.8 V. The
external capacitor is discharged when EN = low and in case of undervoltage lockout or thermal
shutdown.
Ground pin
Feedback pin
This input is fed into an internal error amplifier with a reference voltage of 0.8 V (typ.).
Enable pin
6
EN
When EN ≥ 1.5 V (@ VIN = 5 V), the internal circuitry is allowed to operate and thus enable the
switching operation of the output section. When EN ≤ 0.5 V (@ VIN = 5 V), the internal circuitry is
disabled, putting the TCV7101F in Standby mode.
This pin has an internal pull-down resistor of approx. 500 kΩ.
7
LSG
8
LX
Gate drive pin for the low-side switch
Switch pin
This pin is connected to high-side P-channel MOSFET.
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TCV7101F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Input pin voltage for the output section
VIN1
−0.3 to 6
V
Input pin voltage for the control section
VIN2
−0.3 to 6
V
Soft-start pin voltage
VSS
−0.3 to 6
V
Feedback pin voltage
VFB
−0.3 to 6
V
Enable pin voltage
VEN
−0.3 to 6
V
VEN-VIN2
VEN – VIN2 < 0.3
V
VLSG
−0.3 to 6
V
VLX
−0.3 to 6
V
ILX
−4.6
A
PD
2.2
W
Tjopr
−40 to125
°C
Tj
150
°C
Tstg
−55 to150
°C
VEN – VIN2 voltage difference
LSG pin voltage
Switch pin voltage
(Note 1)
Switch pin current
Power dissipation
(Note 2)
Operating junction temperature
Junction temperature
(Note 3)
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc)
Note 1: The switch pin voltage (VLX) doesn’t include the peak voltage generated by TCV7101F’s switching.
A negative voltage generated in dead time is permitted among the switch pin current (ILX).
Thermal Resistance Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, junction to ambient
Rth (j-a)
44.6
(Note 2)
°C/W
Thermal resistance, junction to case (Tc=25℃)
Rth (j-c)
4.17
°C/W
Note 2:
Glass epoxy board
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Single-pulse measurement: pulse width t=10(s)
Note 3: The TCV7101F may enter into thermal shutdown at the rated maximum junction temperature. Thermal
design is required to ensure that the rated maximum operating junction temperature, Tjopr, will not be
exceeded.
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TCV7101F
Electrical Characteristics (Tj = 25°C, VIN1 = VIN2 = 2.7 to 5.5 V, unless otherwise specified)
Characteristics
Operating input voltage
Operating current
Symbol
Test Condition
Min
Typ.
Max
Unit
VIN (OPR)
―
2.7
―
5.5
V
VIN1 = VIN2 = VEN = VFB = 5 V
―
450
600
μA
VOUT (OPR)
VEN = VIN1 = VIN2
0.8
―
―
V
IIN (STBY) 1
VIN1 = VIN2 = 5 V, VEN = 0 V,
VFB = 0.8 V
―
―
10
IIN (STBY) 2
VIN1 = VIN2 = 3.3 V, VEN = 0 V,
VFB = 0.8 V
―
―
10
ILEAK (H)
VIN1 = VIN2 = 5 V, VEN = 0 V,
VFB = 0.8 V, VLX = 0 V
―
―
10
VIH (EN) 1
VIN1 = VIN2 = 5 V
1.5
―
―
VIH (EN) 2
VIN1 = VIN2 = 3.3 V
1.5
―
―
VIL (EN) 1
VIN1 = VIN2 = 5 V
―
―
0.5
VIL (EN) 2
VIN1 = VIN2 = 3.3 V
―
―
0.5
IIH (EN) 1
VIN1 = VIN2 = 5 V, VEN = 5 V
6
―
13
IIH (EN) 2
VIN1 = VIN2 = 3.3 V, VEN = 3.3 V
4
―
9
0.792
0.8
0.808
0.792
0.8
0.808
VIN1 = VIN2 = 2.7 to 5.5 V
VFB = VIN2
−1
―
1
RDS (ON) (H) 1
VIN1 = VIN2 = 5 V, VEN = 5 V
ILX = −1.5 A
―
0.08
―
RDS (ON) (H) 2
VIN1 = VIN2 = 3.3 V, VEN = 3.3 V
ILX = −1.5 A
―
0.1
―
IIN
Output voltage range
Standby current
High-side switch leakage current
EN threshold voltage
EN input current
VFB1
VFB input voltage
VFB2
VFB input current
IFB
High-side switch on-state resistance
VIN1 = VIN2 = 5 V, VEN = 5 V
Tj = 0 to 85℃
VIN1 = VIN2 = 3.3 V, VEN = 3.3 V
Tj = 0 to 85℃
μA
μA
V
μA
V
μA
Ω
On-state resistance of high-side
transistor connected to the LSG pin
RLSG (ON) (H) VIN1 = VIN2 = 5 V
―
0.8
―
On-state resistance of low-side
transistor connected to the LSG pin
RLSG (ON) (L) VIN1 = VIN2 = 5 V
―
0.4
―
VIN1 = VIN2 = VEN = 5 V
480
600
720
kHz
0.5
1
1.5
ms
Oscillation frequency
Ω
fOSC
Internal soft-start time
tSS
VIN1 = VIN2 = 5 V, IOUT = 0 A,
Measured between 0% and 90% points
at VOUT.
External soft-start charge current
ISS
VIN1 = VIN2 = 5 V, VEN = 5 V
−5
−8
−11
μA
VIN1 = VIN2 = 2.7 to 5.5 V
―
―
100
%
TSD
VIN1 = VIN2 = 5 V
―
150
―
Hysteresis
ΔTSD
VIN1 = VIN2 = 5 V
―
15
―
Detection voltage
VUV
VEN = VIN1 = VIN2
2.35
2.45
2.6
Recovery voltage
VUVR
VEN = VIN1 = VIN2
2.45
2.55
2.7
Hysteresis
ΔVUV
VEN = VIN1 = VIN2
―
0.1
―
VIN1 = VIN2 = 5 V, VOUT = 2 V
4.4
6.2
―
High-side switch duty cycle
Thermal
shutdown (TSD)
Undervoltage
lockout (UVLO)
LX current limit
Detection
temperature
Dmax
ILIM
°C
V
A
Note on Electrical Characteristics
The test condition Tj = 25°C means a state where any drifts in electrical characteristics incurred by an increase in
the chip’s junction temperature can be ignored during pulse testing.
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TCV7101F
Application Circuit Examples
Figure 1 shows a typical application circuit using a low-ESR electrolytic or ceramic capacitor for COUT.
When Using the TCV7101F with an External Low-Side MOSFET:
L
VIN
VOUT
VIN1
LX
VIN2
EN
EN
CIN
CC
RFB1
VFB
TCV7101F
LSG
SS
COUT
Q1
CSS
GND
RFB2
GND
GND
When Using the TCV7101F with an External Schottky Barrier Diode:
L
VIN
VOUT
VIN1
LX
VIN2
EN
EN
CIN
CC
RFB1
VFB
TCV7101F
LSG
SS
RS
COUT
SBD
CSS
GND
CS
RFB2
GND
GND
Figure 1 TCV7101F Typical Application Circuit Examples
Component values (reference value@ VIN = 5 V, VOUT = 3.3 V, Ta = 25°C)
Q1: Low-side FET
(N-channel MOSFET: TPC6008-H or TPC6012 (T5LS,F) manufactured by Toshiba Corporation)
Di: Low-side Schottky barrier diode (Schottky barrier diode: CMS05 manufactured by Toshiba Corporation)
CIN: Input filter capacitor = 10 μF
(ceramic capacitor: GRM21BB30J106K manufactured by Murata Manufacturing Co., Ltd.)
COUT: Output filter capacitor = 47 μF
(ceramic capacitor: GRM31CB30J476M manufactured by Murata Manufacturing Co., Ltd.)
CC: Decoupling capacitor = 1 μF
(ceramic capacitor: GRM155B30J105K manufactured by Murata Manufacturing Co., Ltd.)
RFB1: Output voltage setting resistor = 7.5 kΩ
RFB2: Output voltage setting resistor = 2.4 kΩ
RS: Snubber resistor = 10 Ω
CS: Snubber capacitor = 220 pF
(ceramic capacitor: GRM1552C1H221J manufactured by Murata Manufacturing Co., Ltd.)
L: Inductor = 2.2 μH ( RLF7030T-2R2M5R4 manufactured by TDK-EPC Corporation)
CSS is a capacitor for adjusting the soft-start time.
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TCV7101F
Examples of Component Values (For Reference Only)
Output Voltage Setting
VOUT
Inductance
L
Input Capacitance
CIN
Output Capacitance
COUT
Feedback Resistor
RFB1
Feedback Resistor
RFB2
1.2 V
2.2 μH
10 μF
100 μF
7.5 kΩ
15 kΩ
1.51 V
2.2 μH
10 μF
100 μF
16 kΩ
18 kΩ
1.8 V
2.2 μH
10 μF
100 μF
15 kΩ
12 kΩ
2.5 V
2.2 μH
10 μF
47 μF
5.1 kΩ
2.4 kΩ
3.3 V
2.2 μH
10 μF
47 μF
7.5 kΩ
2.4 kΩ
Component values need to be adjusted, depending on the TCV7101F’s I/O conditions and the board layout.
Application Notes
Inductor Selection
The inductance required for inductor L can be calculated as follows:
VIN: Input voltage (V)
VIN − VOUT VOUT
VOUT: Output voltage (V)
L=
⋅
············· (1)
fosc ⋅ ΔIL
VIN
fosc: Oscillation frequency = 600 kHz (typ.)
ΔIL: Inductor ripple current (A)
*: Generally, ΔIL should be set to approximately 30% of the maximum output current. Since the maximum output
current of the TCV7101F is 3.8 A, ΔIL should be 1.14 A or so. The inductor should have a current rating greater
than the peak output current of 4.4 A. If the inductor current rating is exceeded, the inductor becomes saturated,
leading to an unstable DC-DC converter operation.
L=
=
VIN − VOUT VOUT
⋅
fosc ⋅ ΔIL
VIN
ΔIL
When VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as follows. Be sure to select an
appropriate inductor, taking the input voltage range into account.
IL
5 V − 3.3 V
3.3 V
⋅
600kHz ⋅1.14A 5 V
0
T=
= 1.64 μH ························ (2)
V
TON = Τ ⋅ OUT
VIN
1
fosc
Figure 2 Inductor Current Waveform
Setting the Output Voltage
A resistive voltage divider is connected as shown in Figure 3 to set the output voltage; it is given by Equation 3
based on the reference voltage of the error amplifier (0.8 V typ.), which is connected to the Feedback pin, VFB.
RFB1 should be up to 30 kΩ or so, because an extremely large-value RFB1 incurs a delay due to parasitic
capacitance at the VFB pin. It is recommended that resistors with a precision of ±1% or higher be used for RFB1
and RFB2.
⎞
⎟⎟
⎠
LX
VFB
RFB2
⎛ R ⎞
= 0.8 V ⋅ ⎜⎜1 + FB1 ⎟⎟ ········ (3)
⎝ R FB2 ⎠
VOUT
RFB1
⎛
R
VOUT = VFB ⋅ ⎜⎜ 1 + FB1
R FB2
⎝
Figure 3 Output Voltage Setting Resistors
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TCV7101F
Output Filter Capacitor Selection
Use a low-ESR electrolytic or ceramic capacitor as the output filter capacitor. Since a capacitor is generally
sensitive to temperature, choose one with excellent temperature characteristics. As a rule of thumb, its
capacitance should be 47 μF or greater for applications where VOUT ≥ 2 V, and 100 μF or greater for applications
where VOUT < 2 V. The capacitance should be set to an optimal value that meets the system’s ripple voltage
requirement and transient load response characteristics. The phase margin tends to decrease as the output
voltage is getting low. Enlarge a capacitance for output flatness when phase margin is insufficient, or the
transient load response characteristics cannot be satisfied. Since the ceramic capacitor has a very low ESR value,
it helps reduce the output ripple voltage; however, because the ceramic capacitor provides less phase margin, it
should be thoroughly evaluated.
Output filter capacitors with a smaller value mentioned above can be used by adding a phase compensation
circuit to the VFB pin. For example, suppose using three 10 μF ceramic capacitors as output filter capacitors;
then the phase compensation circuit should be programmed as follows:
*
*
VFB
30 μF
CP1
RFB1
VOUT
COUT
Set the upper cut-off frequency of CP1 and
RFB1 to approx. 60 kHz (fosc/10). ·························· (4)
Choose the value of CP2 to produce zero-frequency
at 1/10th the upper cut-off frequency. ···················· (5)
If RFB2 is less than half of RFB1, RP and CP2
are not necessary. ················································· (6)
(Only CP1 allows programming of VOUT above
1.8 V.)
RFB2
*
LX
RP CP2
CP1 (μF) = 2 / RFB1 (Ω)················ (4)
CP2 (μF) = CP1 (μF) × 10·············· (5)
RFB2 // RP = RFB1 / 2 ····················· (6)
Figure 4 Phase Compensation Circuit
Examples of Component Values in the Phase Compensation Circuit (For Reference Only)
The following values need tuning, depending on the TCV7101F’s I/O conditions and the board layout.
VOUT
COUT
RFB1
RFB2
RP
CP1
CP2
1.2 V
10 μF × 3
7.5 kΩ
15 kΩ
4.7 kΩ
330 pF
3300 pF
1.51 V
10 μF × 3
16 kΩ
18 kΩ
15 kΩ
150 pF
1500 pF
1.8 V
10 μF × 3
15 kΩ
12 kΩ
―
220 pF
―
2.5 V
10 μF × 3
5.1 kΩ
2.4 kΩ
―
470 pF
―
3.3 V
10 μF × 3
7.5 kΩ
2.4 kΩ
―
330 pF
―
The phase compensation circuit shown above delivers good transient load response characteristics with
small-value output filter capacitors by programming f0 (the frequency at which the open-loop gain is equal to
0 dB) to a high frequency. For output filter capacitors, use low-ESR ceramic capacitors with excellent
temperature characteristics (such as the JIS B characteristic). Although the external phase compensation circuit
improves noise immunity, they should be thoroughly evaluated to ensure that the system’s ripple voltage
requirement and transient load response characteristics are met.
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TCV7101F
Rectifier Selection
A low-side switch or Schottky barrier diode should be externally connected to the TCV7101F.
It is recommended that an N-channel MOSFET TPC6008-H, TPC6012 (T5LS,F) or equivalent be on as a
low-side switch. (Please input by 4.5V or more and use the voltage of the drive at the gate when it uses
TPC6008-H.) And N-channel MOSFET of a different type can also be used. However, if the switching speed of the
external MOSFET is low, a shoot-through current may flow due to the simultaneous conduction of high-side and
low-side switches, leading to device failure. Thus, observe the waveform at the LX pin while operating the
TCV7101F with a current close to the rated value to make sure that there is a dead time (the period between the
time when the low-side switch is turned off and the high-side switch is turned on) of more than 10 ns. Thorough
evaluation is required to ensure that the TCV7101F provides an appropriate dead time even when in the
end-product environment.
As for the Schottky barrier diode, the CMS05 is recommended to be used. Using a Schottky barrier diode tends
to lead to a large voltage overshoot on the LX pin. Thus, a series RC filter consisting of a resistor of RS = 10 Ω and
a capacitor of CS = 220 pF should be connected in parallel with the Schottky barrier diode. Power loss of a
Schottky barrier diode tends to increase due to an increased reverse current caused by the rise in ambient
temperature and self-heating due to a supplied current. The rated current should therefore be derated to allow
for such conditions in selecting an appropriate diode.
Soft-Start Feature
The TCV7101F has a soft-start feature.
If the SS pin is left open, the soft-start time, tSS, for VOUT defaults to 1 ms (typ.) internally.
The soft-start time can be extended by adding an external capacitor (CSS) between the SS and GND pins. The
soft-start time can be calculated as follows:
t SS2 = 0.1 ⋅ CSS ···························· (7)
tSS2: Soft-start time (in seconds) when an external capacitor is
connected between SS and GND.
CSS: Capacitor value (μF)
The soft-start feature is activated when the TCV7101F exits the undervoltage lockout (UVLO) state after
power-up and when the voltage at the EN pin has changed from logic low to logic high.
Overcurrent Protection（OCP）
The TCV7101F has maximum current limiting. The TCV7101F limits the ON time of high side switching
transistor and decreases output voltage when the peak value of the LX terminal current exceeds switching
terminal peak current limitation ILIM=6.2A(typ.).
Undervoltage Lockout (UVLO)
The TCV7101F has undervoltage lockout (UVLO) protection circuitry. The TCV7101F does not provide output
voltage (VOUT) until the input voltage (VIN2) has reached VUVR (2.55 V typ.). UVLO has hysteresis of 0.1 V
(typ.). After the switch turns on, if VIN2 drops below VUV (2.45 V typ.), UVLO shuts off the switch at VOUT.
Undervoltage lockout
recovery voltage VUVR
VIN2
Undervoltage lockout
detection voltage VUV
Hysteresis: ΔVUV
GND
Switching operation starts
VOUT
GND
Switching operation
stops
Soft start
Figure 5 Undervoltage Lockout Operation
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TCV7101F
Thermal Shutdown (TSD)
The TCV7101F provides thermal shutdown. When the junction temperature continues to rise and reaches TSD
(150°C typ.), the TCV7101F goes into thermal shutdown and shuts off the power supply. TSD has a hysteresis of
about 15°C (typ.). The device is enabled again when the junction temperature has dropped by approximately
15°C from the TSD trip point. The device resumes the power supply when the soft-start circuit is activated upon
recovery from TSD state.
Thermal shutdown is intended to protect the device against abnormal system conditions. It should be ensured
that the TSD circuit will not be activated during normal operation of the system.
TSD detection
temperature: TSD
Recovery from TSD
Hysteresis: ΔTSD
Tj
0
Switching operation starts
VOUT
GND
Switching operation stops
Soft start
Figure 6 Thermal Shutdown Operation
Usage Precautions
•
The input voltage, output voltage, output current and temperature conditions should be considered when
selecting capacitors, inductors and resistors. These components should be evaluated on an actual system
prototype for best selection.
•
Parts of this product in the surrounding are examples of the representative, and the supply might become
impossible. Please confirm latest information when using it.
•
External components such as capacitors, inductors and resistors should be placed as close to the TCV7101F as
possible.
•
The TCV7101F has an ESD diode between the EN and VIN2 pins. The voltage between these pins should satisfy
VEN − VIN2 < 0.3 V.
•
Add a decoupling capacitor (CC) of 0.1 μF to 1 μF between the GND and VIN2 pins. To achieve stable operation,
also insert a resistor of about 100 Ω between the VIN2 and VIN1 pins to reduce the ripple voltage at the VIN2 pin.
•
The minimum programmable output voltage is 0.8 V (typ.). If the difference between the input and output
voltages is small, the output voltage might not be regulated accurately and fluctuate significantly.
•
GND pin is connected with the back of IC chip and serves as the heat radiation pin. Secure the area of a GND
pattern as large as possible for greater of heat radiation.
•
The overcurrent protection circuits in the Product are designed to temporarily protect Product from minor
overcurrent of brief duration. When the overcurrent protective function in the Product activates, immediately
cease application of overcurrent to Product. Improper usage of Product, such as application of current to Product
exceeding the absolute maximum ratings, could cause the overcurrent protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
•
The thermal shutdown circuits in the Product are designed to temporarily protect Product from minor
overheating of brief duration. When the overheating protective function in the Product activates, immediately
correct the overheating situation. Improper usage of Product, such as the application of heat to Product
exceeding the absolute maximum ratings, could cause the overheating protection circuit not to operate properly
and/or damage Product permanently even before the protection circuit starts to operate.
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TCV7101F
Typical Performance Characteristics
IIN – VIN
IIN – Tj
600
600
(μA)
IIN
400
Operating current
Operating current
IIN
(μA)
VEN = VFB = VIN
Tj = 25°C
200
0
0
2
4
Input voltage
VIN
400
200
0
−50
6
VEN = VIN = 5 V
VFB = VIN
−25
(V)
50
75
Tj
125
(°C)
VIH(EN), VIL(EN) – Tj
VEN = VIN = 3.3 V
VFB = VIN
VIN = 5 V
EN threshold voltage
VIH(EN), VIL(EN) (V)
400
200
0
1.5
VIH(EN)
1
VIL(EN)
0.5
0
−50
−25
0
25
50
Junction temperature
75
Tj
100
−50
125
−25
(°C)
0
25
VIH(EN), VIL(EN) – Tj
75
50
Junction temperature
Tj
100
125
(°C)
IIH(EN) – VEN
2
20
VIN = 5.5 V
VIN = 3.3 V
Tj = 25°C
16
EN input current
IIH(EN) (μA)
1.5
EN threshold voltage
VIH(EN), VIL(EN) (V)
100
2
(μA)
IIN
Operating current
25
Junction temperature
IIN – Tj
600
0
VIH(EN)
1
VIL(EN)
12
8
0.5
4
0
0
−50
−25
0
25
50
Junction temperature
75
Tj
100
125
0
(°C)
1
2
3
4
EN input voltage VEN
10
5
6
(V)
2011-10-27
TCV7101F
IIH(EN) – Tj
VUV, VUVR – Tj
2.6
20
VIN = 5 V
VEN = 5 V
Undervoltage lockout voltage
VUV, VUVR (V)
EN input current
IIH(EN) (μA)
16
12
8
4
Recovery voltage
(VUVR)
2.5
Detection voltage
(VUV)
2.4
VEN = VIN
0
−50
0
−25
25
50
Junction temperature
75
Tj
100
2.3
−50
125
0
−25
(°C)
VOUT – VIN
Tj
100
125
(°C)
VFB – VIN
VFB (V)
1.5
VFB input voltage
(V)
Output voltage VOUT
75
0.82
VEN = VIN
Tj = 25°C
1
0.5
0
VEN = VIN
VOUT = 1.2 V
Tj = 25°C
0.81
0.8
0.79
0.78
2.2
2.3
2.4
2.5
Input voltage
VIN
2.6
2.7
2
3
(V)
4
Input voltage
VFB – Tj
VFB input voltage VFB (V)
VIN = 5 V
VOUT = 1.2 V
VEN = VIN
0.8
0.79
0.78
−25
0
25
50
Junction temperature
VIN
0.82
0.81
−50
5
6
(V)
VFB – Tj
0.82
VFB (V)
50
Junction temperature
2
VFB input voltage
25
75
Tj
100
0.81
0.8
0.79
0.78
−50
125
(°C)
VIN = 3.3 V
VOUT = 1.2 V
VEN = VIN
−25
0
25
50
Junction temperature
11
75
Tj
100
125
(°C)
2011-10-27
TCV7101F
fOSC – VIN
750
fOSC – Tj
750
VIN = 5 V
fosc (kHz)
650
Oscillation frequency
Oscillation frequency
fosc (kHz)
Tj = 25°C
700
600
550
500
450
700
650
600
550
500
450
2
3
4
Input voltage
5
VIN
6
−50
−25
(V)
0
25
50
Junction temperature
ISS – VIN
75
Tj
(°C)
ISS – Tj
VIN = 5 V
Tj = 25°C
−2
External soft-start charge current
ISS (μA)
External soft-start charge current
ISS (μA)
125
0
0
−4
−6
−8
−10
−12
100
2
3
4
Input voltage
5
VIN
−2
−4
−6
−8
−10
−12
−50
6
(V)
−25
0
25
50
Junction temperature
75
Tj
100
125
(°C)
ISS – Tj
0
External soft-start charge current
ISS (μA)
VIN = 3.3 V
−2
−4
−6
−8
−10
−12
−50
−25
0
25
50
Junction temperature
75
Tj
100
125
(°C)
12
2011-10-27
TCV7101F
ΔVOUT – IOUT
(mV)
Output voltage ΔVOUT
10
VIN = 5 V , VOUT = 3.3 V
L = 2.2 μH , COUT = 47 μF
Ta = 25°C
TPC6008-H
Output voltage ΔVOUT
(mV)
20
0
−10
−20
0
1
2
Output current
3
IOUT
−10
−20
(A)
1
2
Output current
(mV)
VIN = 5 V , VOUT = 3.3 V
L = 2.2 μH , COUT = 47 μF
Ta = 25°C
TPC6012(T5LS,F)
0
−10
−20
3
IOUT
4
(A)
ΔVOUT – IOUT
30
Output voltage ΔVOUT
(mV)
0
0
ΔVOUT – IOUT
Output voltage ΔVOUT
10
4
30
10
VIN = 5 V , VOUT = 1.2 V
L = 2.2 μH , COUT = 47 μF × 2
Ta = 25°C
TPC6008-H
20
−30
−30
20
ΔVOUT – IOUT
30
30
VIN = 5 V , VOUT = 1.2 V
L = 2.2 μH , COUT = 47 μF × 2
Ta = 25°C
TPC6012(T5LS,F)
20
10
0
−10
−20
−30
−30
0
1
2
Output current
3
IOUT
4
0
(A)
1
2
Output current
3
IOUT
4
(A)
ΔVOUT – IOUT
(mV)
20
Output voltage ΔVOUT
30
10
VIN = 3.3 V , VOUT = 1.2 V
L = 2.2 μH , COUT =47 μF × 2
Ta = 25°C
TPC6012(T5LS,F)
0
−10
−20
−30
0
1
2
Output current
3
IOUT
4
(A)
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2011-10-27
TCV7101F
ΔVOUT – VIN
ΔVOUT – VIN
40
20
20
Output voltage ΔVOUT
(mV)
Output voltage ΔVOUT
(mV)
VOUT = 3.3 V, IOUT = 10 mA
L = 2.2 μH, COUT = 47 μF
Ta = 25°C, TPC6008-H
30
10
0
−10
−20
−30
−40
2
3
4
Input voltage
5
VIN
VOUT = 1.2 V, IOUT = 10 mA
L = 2.2 μH, COUT = 47 μF × 2
Ta = 25°C, TPC6008-H
10
0
−10
−20
6
2
3
(V)
Input voltage
VIN
6
(V)
80
80
(%)
100
100
(%)
60
Efficiency η
Efficiency η
5
η – IOUT
η – IOUT
40
VIN = 5 V , VOUT = 3.3 V
L = 2.2 μH , COUT = 47 μF
Ta = 25°C , TPC6008-H
20
60
40
VIN = 5 V , VOUT = 1.2V
L = 2.2 μH , COUT = 47 μF×2
Ta = 25°C , TPC6008-H
20
0
0
0
1
2
Output current
3
IOUT
0
4
1
2
Output current
(A)
η – IOUT
3
IOUT
4
(A)
η – IOUT
100
100
80
80
(%)
(%)
60
Efficiency η
Efficiency η
4
40
VIN = 5 V , VOUT = 3.3V
L = 2.2 μH , COUT = 47 μF
Ta = 25°C , TPC6012(T5LS,F)
20
60
40
VIN = 5 V , VOUT = 1.2V
L = 2.2 μH , COUT = 47 μF×2
Ta = 25°C , TPC6012(T5LS,F)
20
0
0
0
1
2
Output current
3
IOUT
4
0
(A)
1
2
Output current
14
3
IOUT
4
(A)
2011-10-27
TCV7101F
η – IOUT
100
(%)
80
60
Efficiency η
(%)
80
Efficiency η
η – IOUT
100
40
VIN =3.3 V , VOUT = 1.2 V
L = 2.2 μH , COUT = 47 μF×2
Ta = 25°C , TPC6012(T5LS,F)
20
60
40
VIN = 5 V , VOUT = 3.3 V
L = 2.2 μH , COUT = 47 μF
Ta = 25°C , CMS05
20
0
0
0
1
2
Output current
3
IOUT
4
0
1
(A)
Overcurrent Protection
IOUT
4
(A)
Overcurrent Protection
4
(V)
VOUT = 1.2 V, Ta = 25°C
L = 2.2 μH, COUT = 47 μF × 2
TPC6008-H
1.5
Output voltage VOUT
(V)
Output voltage VOUT
3
Output current
2
1
Input voltage:
VIN = 5.5 V
Input voltage:
VIN = 2.7 V
0.5
0
3.5
2
VOUT = 1.2 V, Ta = 25°C
L = 2.2 μH, COUT = 47 μF
TPC6008-H
3
Input voltage:
VIN = 5.5 V
2
1
0
4
4.5
5
Output current
5.5
IOUT
6
6.5
7
3.5
(A)
4
4.5
5
Output current
15
5.5
IOUT
6
6.5
7
(A)
2011-10-27
TCV7101F
Startup Characteristics
(Internal Soft-Start Time)
VIN = 5 V
VOUT = 3.3 V
Ta = 25°C
L = 2.2 μH
COUT = 47 μF
Startup Characteristics
(CSS = 0.1 μF)
VIN = 5 V
VOUT = 3.3 V
Ta = 25°C
L = 2.2 μH
COUT = 47 μF
Output
voltage:
Output
voltage:
VOUT
: (1
V/div)
V/div)
VOUT
: (1
Output voltage:
VOUT: (1 V/div)
EN voltage: VEN = L → H
EN voltage: VEN = L → H
200 μs/div
2 ms/div
Load Response Characteristics
Load Response Characteristics
VIN = 5 V, VOUT = 3.3 V, Ta = 25°C
L = 2.2 μH, COUT = 47 μF
TPC6008-H
VIN = 5 V, VOUT = 1.2 V, Ta = 25°C
L = 2.2 μH, COUT = 47 μF × 2
TPC6008-H
Output voltage: VOUT (200 mV/div)
Output voltage: VOUT (100 mV/div)
Output current: IOUT
(10 mA → 3 A → 10
Output current: IOUT
(10 mA → 3 A→ 10 mA)
100 μs/div
100 μs/div
Load Response Characteristics
Load Response Characteristics
(with an External Phase Compensation Circuit)
VIN = 5 V, VOUT = 1.2 V, Ta = 25°C
L = 2.2 μH, COUT = 47 μF × 2
TPC6008-H
VIN = 5 V, VOUT = 1.2 V, Ta = 25°C
L = 2.2 μH, COUT = 10 μF×3, TPC6008-H
RP = 4.7kΩ, CP1 = 330 pF, CP2 = 3300 pF
Output voltage: VOUT (50 mV/div)
Output voltage: VOUT (50 mV/div)
Output current: IOUT
(1.9 A → 3.8 A → 1.9 A)
Output current: IOUT
(1.9 A → 3.8 A → 1.9 A)
100 μs/div
100 μs/div
16
2011-10-27
TCV7101F
Package Dimensions
HSON8-P-0505-1.27
Unit: mm
Weight: 0.068 g (typ.)
17
2011-10-27
TCV7101F
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for
the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product
design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or
applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams,
programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for
such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public
impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the
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• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
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infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology
products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign
Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software
or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
18
2011-10-27