High Power GaAs SPDT Switch DC - 3 GHz SW-106, SW-276 V 2.00 SW-106 (CR-5) Features ● ● ● ● ● +39 dBm Typ. 1 dB Compression Point, -8V Control +65 dBm Typ. 3rd Order Intercept, -8V Control Insertion Loss of 0.4 dB Typical Low Power Consumption Fast Switching Speed Guaranteed Specifications1 (–55°C to +85°C) SW-106 SW-276 Frequency Range DC - 3.0 GHz Insertion Loss DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz 0.5 dB 0.6 dB 0.8 dB 1.2 dB 0.4 dB Max 0.5 dB Max 0.7 dB Max 1.0 dB Max Isolation DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz 34 dB 32 dB 20 dB 15 dB 37 dB Min 31 dB Min 24 dB Min 19 dB Min VSWR DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz 1.3:1 1.5:1 1.5:1 1.6:1 1.3:1 Max 1.5:1 Max 1.5:1 Max 1.6:1 Max Operating Characteristics2 Impedance 50 Ohms Nominal Switching Characteristics Trise, Tfall (10% to 90% ) Ton, Toff (50% CTL to 90%/10% RF) Transients (In-Band) Input Power for Compression 0.9 GHz (-5VControl) 0.9 GHz (-8V Control) 30 ns Typ 35 ns Typ 12 mV Typ 0.1 dB +32.5 dBm +35.5 dBm 1.0 dB +35.5 dBm +39.5 dBm Typ Typ SW-276 (CR-2) Third Order Intercept Point (with two +10 dBm Input Tones) 0.9 GHz (-5V Control) +61 dBm Typ 0.9 GHz (-8V Control) +65 dBm Typ Control Voltages Vin Low Vin High 0 to -0.2V @ 20 µA Max -5V @ 50 µA Typ to -10V @ 800 µA Max 1. All specifications apply when operated with bias voltages of 0V for Vin Low and -5 to -10V for Vin High, and 50 ohm impedance at all RFports, unless otherwise specified. 2. High power (greater than 1W) handling specifications apply to cold switching only. For input powers under 1W hot switching can be used. 3. Contact the factory for standard or custom screening requirements. Ordering Information Part Number Package SW-106 PIN SW-276 PIN Surface Mount Ceramic For both switches: Unless Otherwise Noted: Bottom of Case is AC Ground Dimension in ( ) are in mm. .xxx = ± 0.010 (.xx = ± 0.25) .xx = ± 0.02 (.x = ± 0.5) High Power GaAs SPDT Switch SW-106, SW-276 V 2.00 Two Tone IP3 Measurements Absolute Maximum Ratings Parameter Absolute Max. Input Power 0.05 GHz 0.5 - 2.0 GHz –5V Control –8V Control –10V Control Power Dissipation 2,3 Control Voltage Maximum1 +35 dBm +36 dBm +39 dBm +40 dBm 2.0 W –12V, +1V Operating Temperature –55˚C to +125˚C Storage Temperature –65˚C to +150˚C Maximum Junction Temperature Thermal Resistance 2: θ jc +175˚C +50˚C/W 1. Operation of this device above any one of these parameters ma y cause permanent damage. 2. T case = 25˚C, where Tcase is the temperature at the bottom of the case. 3. Special consideration must be given to the mounting of the switch to minimize the thermal resistance. The bottom of the case should be thermally attached to the mounting surface to maintain the junction temperature under the absolute maximum rating. Functional Schematics (Top View) Bias Voltage 0, –5V 0, –6V 0, –7V 0, –8V Input Power for each tone (dBm) +27 +27 +27 +27 3rd Order Intermodulation Products (dBc) –34 –49 –64 –65 IP3 (dBm) +44 +51 +59 +59 Second Harmonic (dBc) -61 -61 -63 -63 0, –5V 0, –6V 0, –7V 0, –8V +28 +28 +28 +28 –30 –41 –52 –60 +43 +48 +54 +58 -58 -58 -57 -57 0, –5V 0, –6V 0, –7V 0, –8V +29 +29 +29 +29 –28 –34 –44 –52 +43 +46 +51 +55 -54 -54 -54 -54 0, –5V 0, –6V 0, –7V 0, –8V +30 +30 +30 +30 –26 –32 –38 –44 +43 +46 +49 +52 -52 -51 -51 -51 Truth Table Control SW-106 A B High Low Low High Condition of Switch RF Common to Each RF Por t RF1 RF2 On Off Off On Typical Performance SW-276 High Power GaAs SPDT Switch SW-106, SW-276 V 2.00 Typical Performances (cont'd.)