TYSEMI KI1557DH

Transistors
IC
SMD Type
Product specification
KI1557DH
SOT-363
Unit: mm
+0.1
1.3-0.1
0.65
TrenchFET Power MOSFETs
+0.15
2.3-0.15
Fast Switching to Minimize Gate and
+0.1
1.25-0.1
0.525
Features
0.36
Switching Losses
+0.05
0.1-0.02
+0.05
0.95-0.05
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
Absolute Maximum Ratings TA = 25
Parameter
N-Channel
Symbol
5 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
Maximum Power Dissipation*
TA = 25
0.9
V
V
1.2
-0.86
0.8
-0.62
3
IS
PD
Unit
Steady State
-12
1.3
ID
TA = 85
Operating Junction and Storage Temperature Range
5 secs
8
IDM
Continuous Source Current (Diode Conduction)*
Steady State
12
TA = 85
Pulsed Drain Current
P-Channel
-0.77
-0.55
-2
A
A
A
0.5
0.39
-0.5
-0.39
A
0.6
0.47
0.6
0.47
W
0.3
0.25
0.3
0.25
W
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Symbol
t
5 sec
RthJA
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Typical
Maximum
170
210
220
265
105
125
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KI1557DH
Electrical Characteristics TJ = 25
Parameter
Symbol
Gate Threshold Voltage
VGS( th)
Gate Body Leakage
IGSS
Testconditons
IDSS
ID(on)
On State Drain Current*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
tr
Rise Time
td( off)
Turn Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery
Time
trr
* Pulse test; pulse width
Max
VDS = VGS, ID = 100 A
N-Ch
0.45
1
P-Ch
-0.45
1
A
VDS = 0 V VGS = 8V
N-Ch
100
P-Ch
100
N-Ch
1
VDS = -9.6V, VGS = 0 V
P-Ch
-1
VDS = 9.6 V, VGS = 0 V, TJ = 85
N-Ch
5
VDS = -9.6V, VGS = 0 V, TJ = 85
P-Ch
-5
VDS
5 V, VGS = 4.5 V
N-Ch
3
VDS
-5 V, VGS = -4.5 V
P-Ch
2
VGS = 4.5 V, ID = 1.2A
Drain Source On State Resistance*
Typ
VDS = VGS, ID = -100
VDS = 9.6V, VGS = 0 V
Zero Gate Voltage Drain Current
Min
N-Ch
P-Ch
0.445 0.535
N-Ch
0.230 0.280
VGS = -2.5 V, ID = -0.6A
P-Ch
0.735 0.880
VGS = 1.8 V, ID = 0.2A
N-Ch
0.284 0.340
VGS = -1.8 V, ID = -0.20A
P-Ch
1.05
VDS = 5 V, ID = 1.2A
N-Ch
0.8
VDS = -5 V, ID = -0.77A
P-Ch
1.2
IS = 0.39A, VGS = 0 V
N-Ch
0.8
1.2
IS = -0.93A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Channel
N-Ch
0.8
1.2
VDS = 6 V, VGS = 4.5V, ID = 1.2A
P-Ch
1.1
1.8
N-Ch
0.15
P-Channel
P-Ch
0.3
VDS = -6 V, VGS = -4.5 V, ID = -0.1A
N-Ch
0.20
P-Ch
0.25
mS
V
pC
N-Ch
15
25
VDD = 6 V, RL = 12
P-Ch
17
25
ID= 0.5 A, VGEN = 4.5V, Rg = 6
N-Ch
25
40
P-Ch
30
45
P-Channel
N-Ch
25
40
VDD = -6 V, RL = 12
P-Ch
15
25
ID= -0.5 A, VGEN = -4.5 V, Rg = 6
N-Ch
10
15
P-Ch
10
15
s
A
1.26
N Channel
s
nA
0.195 0.235
VGS = 2.5 V, ID = 1.0A
IF = -0.39 A, di/dt = 100 A/
V
A
VGS = -4.5 V, ID = -0.77A
IF = 0.39 A, di/dt = 100 A/
Unit
N-Ch
20
40
P-Ch
25
40
ns
300 s, duty cycle 2%.
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2