MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 3.30 ±0.10 TO-220 2.54 ±0.20 ø3.18 ±0.10 (0.70) 15.80 ±0.20 ● Advanced Process Technology ● Ultra Low On-Resistance (1.00x45°) 15.87 ±0.20 6.68 ±0.20 ■ Features 10.16 ±0.20 ● Dynamic dv/dt Rating ● Fast Switching 0.80 ±0.10 ) 0° 1 #12 3 (3 9.75 ±0.30 MAX1.47 ● Fully Avalanche Rated 0.35 ±0.10 +0.10 0.50 –0.05 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 2.54TYP [2.54 ±0.20] 1. GATE 2. DRAIN 3. SOURCE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,TC = 25℃ ID 110 Continuous Drain Current, VGS @ 10V,TC = 100℃ ID 80 Pulsed Drain Current*1 IDM 390 Power Dissipation PD 200 W 1.3 W/℃ Linear Derating Factor Unit A Linear Derating Factor VGS ± 20 V Avalanche Current *1 IAR 62 A Repetitive Avalanche Energy *1 EAR 20 mJ V/ns Peak Diode Recovery dv/dt *2 dv/dt 5 Junction-to-Case RθJC 0.75 (Max) Case-to-Sink, Flat, Greased Surface RθCS 0.5 Junction-to-Ambient Operating Junction and Storage Temperature Range RθJA 62 (Max) TJ.TSTG -55 to + 175 ℃/W ℃ *1 Repetitive rating; pulse width limited by max. junction temperature. *2 ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS,TJ ≤ 175℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 4 MOSFET IC MOSFET Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-to-Source Breakdown Voltage Testconditons VDSS VGS = 0V, ID = 250µA Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 62A*1 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Min Typ Max Unit 8.0 mΩ 4.0 V 55 V 2.0 VDS = 55V, VGS = 0V 25 VDS = 44V, VGS = 0V, TJ = 150℃ 250 VGS = 20V 100 VGS = -20V -100 Total Gate Charge Qg ID = 62A 146 Gate-to-Source Charge Qgs VDS = 44V 35 Gate-to-Drain ("Miller") Charge Qgd VGS = 10V,*1 54 Turn-On Delay Time td(on) VDD = 28V 14 ID = 62A 101 RG = 4.5Ω 50 VGS=10V *1 65 Rise Time tr Turn-Off Delay Time td(off) µA nA nC ns Fall Time tf Internal Drain Inductance LD 4.5 Internal Source Inductance LS 7.5 Input Capacitance Ciss VGS = 0V 3247 Output Capacitance Coss VDS = 25V 781 Reverse Transfer Capacitance Crss ƒ = 1.0MHz 211 TJ = 25℃, IF = 62A 69 104 ns 143 215 nC nH Reverse Recovery Time trr pF Reverse RecoveryCharge Qrr di/dt = 100A/µs*1 Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Continuous Source Current（Body Diode) IS 110 Pulsed Source Current （Body Diode) *2 ISM 390 Diode Forward Voltage VSD A 1.3 TJ = 25℃, IS = 62A, VGS = 0V*1 V *1 Pulse width ≤ 400µs; duty cycle ≤ 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 20µs PULSE WIDTH TJ = 175°C 1 0.1 100 1 VDS , Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 25 ° C TJ = 175° C 100 10 V DS = 25V 20µs PULSE WIDTH 4 6 8 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1 10 VDS , Drain-to-Source Voltage (V) 12 2.5 ID = 107A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) VGS , Gate-to-Source Voltage (V) Fig 4. Fig 4. Normalized On-Resistance Vs. Temperature 6000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd 4000 Ciss 3000 2000 Coss 1000 Crss 0 16 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics ID = 62A V DS= 44V V DS= 27V V DS= 11V 14 12 10 8 6 4 2 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage http://www.twtysemi.com [email protected] 0 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 4008-318-123 3 of 4 MOSFET IC Transistors MOSFET IC SMD Type DIP SMDType Type DIP Type Product specification IRF3205 ISD , Reverse Drain Current (A) 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175° C ID , Drain Current (A) 100 1000 10 10us 100 TJ = 25 ° C 100us 1ms 10 1 V GS = 0 V 0.1 0.2 0.8 1.4 2.0 1 1 2.6 LIMITED BY PACKAGE ID , Drain Current (A) 100 80 A 60 40 20 EAS , Single Pulse Avalanche Energy (mJ) 120 100 125 1000 500 ID 25A 44A BOTTOM 62A TOP 400 300 200 100 0 25 0 75 100 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 50 10 VDS , Drain-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) 25 10ms TC = 25 ° C TJ = 175 °C Single Pulse 150 175 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) TC , Case Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case http://www.twtysemi.com [email protected] 4008-318-123 4of 4