Transistors IC SMD Type Product specification KQB2N60 TO-263 2.4A, 600 V. RDS(ON) = 4.7 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Fast switching 0.1max +0.1 1.27-0.1 lmproved dv/dt capability +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2 100% avalanche tested 1 5 .2 5 -0+ 0.2.2 8 .7 -0+ 0.2.2 Low Crss(typical 5.0pF) 5 .6 0 Low gate charge (typical 9.0nC) +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Symbol Rating Unit VDSS 600 V Drain Current Continuous (TC=25 ) ID Drain Current Continuous (TC=100 ) Drain Current Pulsed *1 IDM 2.4 A 1.5 A 9.6 A Gate-Source Voltage VGSS 30 Single Pulsed Avalanche Energy*2 EAS 140 mJ Avalanche Current *1 IAR 2.4 A Repetitive Avalanche Energy *1 EAR 6.4 mJ Peak Diode Recovery dv/dt *3 dv/dt 4.5 V/ns PD 3.13 W Power dissipation @ TA=25 Power dissipation @ TC=25 64 PD 0.51 Derate above 25 Operating and Storage Temperature TJ, TSTG -55 to150 TL 300 Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds V W W/ Thermal Resistance Junction to Case R JC 1.95 /W Thermal Resistance Junction to Ambient *4 R JA 40 /W Thermal Resistance Junction to Ambient R JA 62.5 /W *1 Repetitive Rating:Pulse width limited by maximum junction temperature *2 l=45mH,IAS=2.4A,VDD=50V,RG=25 ,Startion TJ=25 *3 ISD 2.4A,di/dt 200A/ S,VDD BVDSS,Startiong TJ=25 *4 When mounted on the minimum pad size recommended (PCB Mount) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KQB2N60 Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Testconditons Min Typ Max 600 VGS = 0 V, ID = 250 A V 0.4 ID = 250 A, Referenced to 25 Unit mV/ VDS = 600 V, VGS = 0 V 10 A VDS = 480 V, TC=125 100 A IGSSF VGS = 30 V, VDS = 0 V 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS =-30 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 5.0 V Static Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 1.2A 3.7 VDS = 50 V, ID = 1.2A * 2.45 IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss 3.0 VDS = 25 V, VGS = 0 V,f = 1.0 MHz 4.7 S 270 350 pF 40 50 pF Reverse Transfer Capacitance Crss 5 7 pF Turn-On Delay Time td(on) 10 30 ns Turn-On Rise Time tr 25 60 ns Turn-Off Delay Time td(off) VDD = 300 V, ID = 2.4A,RG=25 * 20 50 ns Turn-Off Fall Time tf 25 60 ns Total Gate Charge Qg 9.0 11 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480 V, ID = 2.4A,VGS = 10 V * 1.6 nC 4.3 nC Maximum Continuous Drain-Source Diode Forwrad Current IS 2.4 A Maximum Pulsed Drain-Source Diode Forward Current ISM 9.6 A Drain-Source Diode Forward Voltage VSD 1.4 V Diode Reverse Recovery Time trr Diode Reverse Recovery Current Qrr * Pulse Test: Pulse Width 300 s, Duty Cycle http://www.twtysemi.com VGS = 0 V, IS = 2.4 A * VGS = 0 V,dIF/dt = 100 A/ s,IS=2.4A 180 0.72 ns C 2.0% [email protected] 4008-318-123 2of 2