TYSEMI 2SD1252

Transistors
SMD Type
Product specification
2SD1252,2SD1252A
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Power transistors.
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-base voltage
2SD1252
VCBO
2SD1252A
Collector-emitter voltage
2SD1252
Rating
Unit
60
V
80
V
60
V
80
V
VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
5
A
1.3
W
35
W
VCEO
2SD1252A
Emitter-base voltage
Collector power dissipation
Ta = 25
PC
Tc = 25
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SD1252,2SD1252A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter voltage
2SD1252
VCEO
Testconditons
IC = 30 mA, IB = 0
2SD1252A
Base-emitter voltage
VBE
Collector-emitter cutoff current
2SD1252
ICES
2SD1252A
Collector-emitter cutoff current
2SD1252
ICEO
2SD1252A
Emitter-base cutoff current
IEBO
Forward current transfer ratio
Typ
hFE
2SD1252
80
V
VCE = 4 V, IC = 3 A
1.8
V
VCE = 60 V, VBE = 0
200
ìA
VCE = 80 V, VBE = 0
200
ìA
VCE = 30 V, IB = 0
300
ìA
VCE = 40 V, IB = 0
300
ìA
1
mA
VCE = 4 V, IC = 1 A
40
VCE = 4 V, IC = 3 A
10
VCE = 5 V, IC = 0.5 A, f = 10 MHz
fT
Unit
V
250
VCE(sat) IC = 3 A, IB = 0.375 A
Collector-emitter saturation voltage
Max
60
VEB = 6 V, IC = 0
Forward current transfer ratio
Transition frequency
Min
2SD1252A
1.2
V
30
MHz
25
MHz
Turn-on time
ton
IC=1A
0.5
ìs
Storage time
tstg
IB1=-IB2=0.1 A
2.5
ìs
VCC=50V
0.4
ìs
Fall time
tf
hFE Classification
Rank
R
Q
P
hFE
40 90
70 150
120 250
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2