TYSEMI 2SD1256

Transistors
SMD Type
Product specification
2SD1256
TO-252
6.50
+0.2
5.30-0.2
+0.15
1.50 -0.15
+0.15
-0.15
Features
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
+0.1
0.80-0.1
0.127
max
+0.25
2.65 -0.1
Large collector current IC.
+0.28
1.50 -0.1
+0.2
9.70 -0.2
Satisfactory linearity of forward current transfer ratio hFE.
+0.15
0.50 -0.15
Low collector-emitter saturation voltage VCE(sat).
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
130
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
5
A
Peak collector current
ICP
Collector power dissipation
Ta = 25
PC
Collector power dissipation
10
A
1.3
W
40
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-emitter voltage
VCEO
IC = 10mA, IB = 0
Collector-base cutoff curent
ICBO
VCB = 100 V,IE = 0
Emitter-base cutoff current
IEBO
VEB = 5 V, IC = 0
Forward current transfer ratio
hFE
Min
Typ
Max
80
VCE = 2 V, IC = 2 A
90
VCE = 2 V, IC = 0.1 A
45
Unit
V
10
ìA
50
ìA
260
Collector-emitter saturation voltage
VCE(sat) IC = 2 A, IB = 0.2 A
0.5
V
Base-emitter saturation voltage
VBE(sat) IC = 2 A, IB = 0.2 A
1.5
V
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
VCE = 10 V, IC = 0.5 A , f = 10 MHz
IC = 2 A,IB1 = -IB2 = 0.2 A, VCC = 50 V
tf
30
MHz
0.5
ìs
1.5
ìs
0.15
ìs
hFE Classification
Rank
Q
P
hFE
90 180
130 260
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