XP202A0003PR-G ETR1129-003 P-channel 4V (G-S) MOSFET ■FEATURES ■APPLICATION ■用途 ● Switching ・Low On Resistance ・Ultra High Speed Switching ・4V Driving ・EU RoHS Compliant, Pb Free ■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP202A0003PR-G SOT-89 1,000/Reel * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The high-melting solder paste (lead-containing) is used as attachment. ■ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS UNITS VDSS VGSS ID IDP Pd Tch Tstg -30 ±20 -5 -20 1.5 +150 - 55 ~ +150 V V A A W ℃ ℃ Drain-Source Voltage Gate-Source Voltage Drain Current (DC) ( 1) Drain Current(Pulse) * ( 2) Channel Power Dissipation * Channel Temperature Storage Temperature ■PIN CONFIGURATION ( 1) * PW≦10μs,duty cycle≦1% ( 2) 2 * Ceramic Board (250mm ×0.8mm) Mounting 1.Gate 2.Drain 3.Source SOT-89(TOP VIEW） ■ ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage V(BR)DSS IDSS IGSS VGS(off) |yfs| Drain-Source Cut-Off Current Gate-Source Leakage Current Gate-Source Cut-Off Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacity Output Capacity Feedback capacity Turn on Delay time Rise Time Turn off Delay Time Fall Time All Gate Charge Amount Gate Source Charge Amount Gate Drain Charge Amount Diode Forward Voltage LIMITS UNITS MIN. TYP. MAX. ID=-1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V,VDS=0V VDS=-10V,ID=-1mA VDS=-10V,ID=-3A -30 -1.2 2.8 8.0 -1 ±10 -2.6 - V μA μA V S RDS(ON)1 ID=-3A,VGS=-10V - 47 59 mΩ RDS(ON)2 ID=-1.5A,VGS=-4.5V - 70 100 mΩ RDS(ON)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1.5A,VGS=-4V VDS=-10V,f=1MHz VDS=-10V,f=1MHz VDS=-10V,f=1MHz - 80 450 110 80 7 8 31 6 10 1.5 2.5 -0.9 113 -1.2 mΩ pF pF pF ns ns ns ns nC nC nC V IS=-5A, VGS=0V 1/5 XP202A0003PR-G ■SWITCHING-TIME TEST CIRCUIT 0V 90% S 50Ω VI VI 10% G 0V 90% D Oscilloscope VO 90% VO 10% RL 10% td(off) tf td(on) tr Oscilloscope ■EQUIVALENT CIRCUIT ■PACKAGING INFORMATION 4.0±0.25 1.5±0.1 (0.1) 1.0±0.2 2.5±0.1 (0.4) ●SOT-89 ■MARKING RULE ③ ⑤ ② ④ ① represents product series MARK PRODUCT SERIES 6 XP202*******-G ① ② ③ represents product group and number MARK 1 2 3 ③ PRODUCT GROUP PRODUCT NUMBER PRODUCT SERIES ② A D 00 03 XP202A0003**-G ④，⑤ represents production lot number 0 to 9, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) *No character inversion used 2/5 XP202A0003PR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (2) Drain Current vs. Drain-Source Voltage (1) Drain Current vs. Drain-Source Voltage XP202A0003PR XP202A0003PR Ta= 25℃ -5.0 -4.0 -16.0V -10.0V -6.0V -4.5V -3.5 -3.0 -2.5 Drain Current： ID (A) Drain Current： ID (A) -4.5 -2.0 -1.5 -4.0V -3.5V -3.0V -1.0 -0.5 V GS= -2.5V 0.0 0.0 -0.2 -0.4 -0.6 -0.8 VDS= -10V， Pulse Test -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.0 -1.0 -1.0 -2.0 (4) Drain-Source On-State Resistance vs. Ambient Temperature (3) Drain-Source On-State Resistance vs. Gate-Source Voltage XP202A0003PR XP202A0003PR Ta= 25℃ 140 180 Static Drain-source On-State Resistance： RDS(on) （ｍΩ) Static Drain-source On-State Resistance：RDS(on) （ｍΩ) 200 160 140 120 ID= -3.0A 80 60 40 20 ID= -1.5A 0 0 -2 -4 -6 -8 -4.0 Gate-Source Voltage： V GS (V) Drain-Source Voltage： V DS (V) 100 -3.0 V GS= -4.0V, ID= -1.5A 120 100 V GS= -4.5V, ID= -1.5A 80 60 40 V GS= -10V, ID= -3A 20 0 -50 -25 -10 -12 -14 -16 0 25 50 75 100 125 150 Ambient Temperature： Ta ( ℃) Gate-to-Source Voltage： V GS (V) (6) Source Current vs. Diode Forward Voltage (5) Forward Transfer Admittance vs. Drain Current XP202A0003PR XP202A0003PR Ta= 75℃ Ta= -25℃ 10 Source Current： IS (A) Forward Transfer Admittance ： |yfs| (S) 100 VGS= 0V 10 VDS= -10V Ta=25℃ 1 1 Ta= 25℃ 0.1 Ta=75℃ 0.1 0.01 Ta= -25℃ 0.01 -0.2 0.1 1 Drain Current： ID (A) 10 -0.4 -0.6 -0.8 -1.0 -1.2 Diode Forw ard Voltage： V SD (V) 3/5 XP202A0003PR-G (7) Switching Time vs. Drain Current (8) Ciss, Coss, Crss vs. Drain-Source Voltage XP202A0003PR Ciss td(off) tf tr 10 f=1MHz 1000 Ciss, Coss, Crss (pF) Switching Time： t (ns) XP202A0003PR VGS= -10V, VDS= -15V 100 td(on) 1 Coss 100 Crss 10 0.1 1 10 0 5 Drain Current： ID (A) 10 30 XP202A0003PR VDS= -15V， ID = -5A 100 Operation in this area is -9 limitedby RDS(on) ID =-20A -8 Drain Current : DI (A) Gate-Source Voltage： V GS (V) 25 (10) Area of Safe Operation XP202A0003PR -7 -6 -5 -4 -3 -2 10 ID =-5A 0.1ms 1 0 1 2 3 4 5 6 7 Gate Charge： Qg (nc) 8 9 10 1ms 10ms 100ms 0.1 -1 0 4/5 20 Drain - Source Voltage： V DS (V) (9) Gate-Source Voltage vs. Gate Charge -10 15 0.01 0.01 1000ms o Ta=25 C Single pulse When mounted on ceramic substrate DC Operation (250mm2 X 0.8mm) 0.1 1 10 Drain-Source Voltage : V DS (V) 100 XP202A0003PR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 5/5