TOSHIBA TLP624BV

TLP624,TLP624−2,TLP624−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP624,TLP624−2,TLP624−4
Programmable Controllers
AC/DC−Input Module
Telecommunication
Unit in mm
The TOSHIBA TLP624, −2 and −4 consist of a gallium arsenide infrared
emitting diode optically coupled to a photo−transistor.
The TLP624−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP624−4 provides four isolated channels in a sixteen plastic
DIP.
•
Collector−emitter voltage: 55V min.
•
Current transfer ratio
Classi−
fication
TOSHIBA
Marking
of
classi−
fication
Current Transfer Ratio(min)
Ta = 25°C
Ta=−25~75°C
IF=0.5mA
IF=1mA
IF=1mA
VCE=0.5V
VCE=1.5V
VCE=0.5V
Rank BV
200%
100%
100%
BV
Standard
100%
50%
50%
BV,blank
•
Isolation voltage: 5000Vrms min.
•
UL recognized: UL1577, file No.E67349
•
BSI approved: BS EN60065: 2002 Certificate No.7426
11−5B2
Weight: 0.26 g (typ.)
BS EN60950-1: 2002 Certificate No.7427
•
Note: Application type name for certification test, please use
standard product type name, i.e.
TLP624(BV): TLP624
TLP624−2(BV): TLP624−2
TOSHIBA
Weight: 0.54 g (typ.)
Pin Configurations (top view)
TLP624–2
TLP624
TLP624–4
1
4
1
8
1
16
2
3
2
7
2
15
3
6
3
14
4
5
4
13
5
12
6
11
7
10
8
9
1. Anode
2. Cathode
3. Emitter
4. Collector
1,3 : Anode
2,4 : Cathode
5,7 : Emitter
6,8 : Collector
11−10C4
TOSHIBA
11−20A3
Weight: 1.1 g (typ.)
1,3,5,7: Anode
2,4,6,8: Cathode
9,11,13,15: Emitter
10,12,14,16: Collector
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2007-10-01
TLP624,TLP624−2,TLP624−4
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
Forward current
IF
Detector
LED
Forward current detating
ΔIF / °C
TLP624
TLP624−2
TLP624−4
Unit
60
50
mA
−0.7(Ta ≥ 39°C) −0.5(Ta ≥ 25°C) mA / °C
Pulse forward current
IFP
Power dissipation(1 Circuit)
PD
100
70
mW
ΔPD / °C
−1.0
−0.7
mW / °C
Power dissipation derating
(Ta ≥ 25°C, 1 Circuit)
1(100μs, pulse, 100pps)
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Collector−emitter voltage
VCEO
55
V
Emitter−collector voltage
VECO
7
V
Collector current
IC
50
mA
Collector power dissipation(1 circuit)
PC
150
100
mW
Collector power dissipation derating
(Ta ≥ 25°C, 1 Circuit)
ΔPC / °C
−1.5
−1.0
mW / °C
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Popr
−55~100
°C
Lead soldering temperature
Tsol
260(10s)
°C
Total package power dissipation(1 Circuit)
PT
250
150
mW
Total package power dissipation derating
(Ta ≥ 25°C, 1 Circuit)
ΔPT / °C
−2.5
−1.5
mW / °C
Isolation voltage
(Note 1)
BVS
5000(AC, 1min., RH≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: LED side pins shorted together, and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic
Supply voltage
Symbol
Min.
Typ.
Max.
Unit
VCC
―
5
24
V
Forward current
IF
―
1.6
20
mA
Collector current
IC
―
1
10
mA
Topr
−25
―
75
°C
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP624,TLP624−2,TLP624−4
Individual Electrical Characteristics (Ta = 25°C)
LED
Characteristic
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR= 5V
―
―
10
μA
Capacitance
CT
V = 0, f = 1MHz
―
30
―
pF
V(BR)CEO IC = 0.5mA
55
―
―
V
V(BR)ECO IE = 0.1mA
7
―
―
V
VCE = 24V
―
10
100
nA
VCE = 24V, Ta = 85°C
―
2
50
μA
V=0 , f=1MHz
―
12
―
pF
Min.
Typ.
Max.
Unit
Collector−emitter
breakdown voltage
Emitter−collector
Detector
Symbol
breakdown voltage
Collector dark current
Capacitance collector
to emitter
ICEO
CCE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Current transfer ratio
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
100
―
1200
200
―
1200
Low input CTR
IC / IF
IF = 0.5mA, VCE = 1.5V
Rank BV
50
―
―
100
―
―
IC = 0.5mA, IF = 1mA
―
―
0.4
IC = 1mA, IF = 1mA
Rank BV
―
0.2
―
―
―
0.4
Min.
Typ.
Max.
(low)
Collector−emitter
VCE
saturation voltage
(sat)
%
%
V
Coupled Electrical Characteristics (Ta = −25°C~75°C)
Characteristic
Symbol
Test Condition
Current transfer ratio
IC / IF
IF = 1mA, VCE = 0.5V
Rank BV
Low input CTR
IC / IF
IF = 0.5mA, VCE = 1.5V
Rank BV
(low)
3
50
―
―
100
―
―
―
50
―
―
100
―
Unit
%
%
2007-10-01
TLP624,TLP624−2,TLP624−4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Isolation resistance
Test Condition
VS = 0, f = 1MHz
RS
VS = 500V
BVS
Typ.
Max.
Unit
―
0.8
―
pF
―
Ω
5×10
AC, 1minute
Isolation voltage
Min.
10
10
14
5000
―
―
AC, 1second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Vdc
Min.
Typ.
Max.
Unit
―
8
―
―
8
―
―
10
―
―
8
―
―
10
―
―
50
―
―
300
―
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Rise time
tr
Fall time
tf
Turn−on time
ton
Turn−off time
toff
Turn−on time
tON
Test Condition
VCC = 10V, IC = 2mA
RL = 100Ω
RL = 4.7 kΩ (Fig.1)
VCC = 5 V, IF = 1.6mA
Storage time
tS
Turn−off time
TOFF
μs
μs
Fig. 1 Switching time test circuit
IF
IF
VCC
tS
RL
VCE
VCE
VCC
4.5V
0.5V
tON
4
tOFF
2007-10-01
TLP624,TLP624−2,TLP624−4
PC – Ta
200
80
160
Allowable collector power
dissipation PC (mW)
Allowable forward current
IF (mA)
IF – Ta
100
TLP624
60
TLP624-2,-4
40
120
TLP624-2,-4
80
40
20
0
–20
TLP624
0
20
40
60
Ambient temperature
80
100
0
-20
120
Ta (°C)
0
20
40
Ambient temperature
IFP – DR
5000
100
120
1.4
1.6
2.0
2.4
Ta (°C)
Ta = 25 °C
50
Ta = 25 °C
(mA)
30
1000
10
500
Forward current IF
Allowable pulse forward current
IFP (mA)
80
IF – V F
100
Pulse width ≦ 100 μs
3000
60
300
100
50
30
10
3
5
3
1
0.5
0.3
3
10-
10-2
3
10-1
3
Duty cycle ratio
0.1
0.4
100
3
0.6
0.8
1.0
Forward voltage
DR
ΔVF / ΔTa – IF
1.2
VF
(V)
IFP – VFP
1000
IFP (mA)
-2.4
Pulse forward current
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / °C)
-2.8
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
0.3 0.5
1
3
5
Forward current
IF
10
30
Pulse width ≦ 10 μs
500 Repetitive
300 Frequency = 100 Hz
Ta = 25 °C
100
50
30
10
5
3
1
0
50
(mA)
0.4
0.8
1.2
Pulse forward voltage
5
1.6
VFP
(V)
2007-10-01
TLP624,TLP624−2,TLP624−4
IC – VCE
IC / IF – IF
4.0
500
Ta = 25 °C
IF = 1.0 mA
3.5
300
(mA)
3.0
100
Collector current IC
Current transfer ratio
IC / IF (%)
1000
Ta = 25 °C
50
VCE = 5 V
30
VCE = 1.5 V
VCE = 0.5 V
10
0.1
0.3
0.5
1
Forward current IF
3
5
10
0.8 mA
2.5
2.0
0.6 mA
1.5
0.5 mA
1.0
(mA)
0.4 mA
0.5
0.2 mA
0
0.1
0.3
0.5
1
3
Collector-emitter voltage
5
10
VCE (V)
IC – IF
50
Ta = 25 °C
30
VCE = 5 V
VCE = 1.5 V
IC – Ta
VCE = 0.5 V
30
VCE = 1.5 V
10
VCE = 0.5 V
IF = 2 mA
10
2 mA
3
(mA)
5
1
Collector current IC
Collector current IC
(mA)
5
0.5
0.3
0.1
1 mA
3
0.5 mA
1
0.5
0.3
0.2 mA
0.05
0.1
0.03
0.05
0.01
0.1
0.3
0.5
1
Forward current IF
3
5
0.03
10
(mA)
-20
0
20
40
Ambient temperature
6
60
80
Ta
(°C)
100
2007-10-01
TLP624,TLP624−2,TLP624−4
ID – Ta
Switching Time – RL
10
1
3000
VCE = 24 V
1000
5V
(μA)
500
10-1
10
Switching time (μs)
Collector dark current ID (ICEO)
IF = 1.6 mA
VCC = 5 V
10 V
100
Ta = 25 °C
-2
300
tOFF
100
50
ts
3
10-
30
tON
10-4
10
5
10-5
0
20
40
60
Ambient temperature
80
Ta
100
3
1
120
(°C)
3
5
Load resistance
7
30
10
RL
50
100
(kΩ)
2007-10-01
TLP624,TLP624−2,TLP624−4
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
8
2007-10-01