Data Sheet PD-97237C IR1166SPbF SmartRectifierTM CONTROL IC Features • • • • • • • • • • • • • • • Secondary side high speed SR controller DCM, CrCM and CCM flyback topologies 200V proprietary IC technology Max 500KHz switching frequency Anti-bounce logic and UVLO protection 4A peak turn off drive current Micropower start-up & ultra low quiescent current 10.7V gate drive clamp 50ns turn-off propagation delay Vcc range from 11.3V to 20V Direct sensing of MOSFET drain voltage Minimal component count Simple design Lead-free Compatible with 1W Standby, Energy Star, CECP, etc. Description Package IR1166S is a smart secondary side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in continuous, discontinuous and critical current mode operation and both fixed and variable frequency modes. 8-Lead SOIC IR1166S Application Diagram Vin Rs Rdc XFM Cdc U1 1 Ci 2 3 RMOT 4 VCC VGATE OVT GND MOT VS EN VD IR1166S Rtn 8 7 LOAD Cs 6 Co 5 Rg Q1 *Please note that this data sheet contains advanced information that could change before the product is released to production. www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 1 IR1166S Absolute Maximum Ratings Stress beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions are not implied. All voltages are absolute voltages referenced to GND. Thermal resistance and power dissipation are measured under board mounted and still air conditions. Symbol Min. Max. Units Supply Voltage Parameters VCC -0.3 20 V Enable Voltage VEN -0.3 20 V Cont. Drain Sense Voltage VD -3 200 V Pulse Drain Sense Voltage VD -5 200 V Source Sense Voltage VS -3 20 V VGATE -0.3 20 V Operating Junction Temperature TJ -40 150 °C Storage Temperature TS -55 150 °C Thermal Resistance RqJA 128 °C/W Gate Voltage Package Power Dissipation Remarks VCC=20V, Gate off SOIC-8 PD 970 mW SOIC-8, TAMB=25°C ESD Protection VESD 1.5 kV Human Body Model* Switching Frequency fsw 500 kHz * Per EIA/JESD22-A114-B( discharging a 100pF capacitor through a 1.5kW series resistor). www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 2 IR1166S Electrical Characteristics The electrical characteristics involve the spread of values guaranteed within the specified supply voltage and junction temperature range TJ from – 25° C to 125°C. Typical values represent the median values, which are related to 25°C. If not otherwise stated, a supply voltage of VCC =15V is assumed for test condition. Supply Section Parameters Supply Voltage Operating Range VCC Turn On Threshold VCC Turn Off Threshold (Under Voltage Lock Out) VCC Turn On/Off Hysteresis Operating Current Quiescent Current Start-up Current Symbol Min. VCC 11.4 VCC ON 9.8 VCC UVLO VCC HYST Max. Units 18 V 10.6 11.3 V 8.4 9 9.7 V 1.4 1.57 1.7 V 8 10 IQCC 47 1.7 65 2.2 mA ICC START 92 200 µA VCC=VCC ON - 0.1V 145 200 µA VEN=0V, VCC =15V 2.71 3.1 3.2 1.9 2 V ICC Sleep Current ISLEEP Enable Voltage High VENHI Enable Voltage Low VENLO Enable Pull-up Resistance 2.25 2.15 1.3 1.2 Typ. 1.6 1.5 REN mA Remarks CLOAD=1nF, fsw = 400kHz CLOAD=10nF, fsw = 400kHz V MW GBD Comparator Section Parameters Turn-off Threshold Symbol Min. Typ. -7 -3 0 VTH1 -15 -10.3 -7 -23 -18.7 -15 Remarks OVT = 0V, VS=0V mV OVT floating, VS=0V OVT = VCC, VS=0V Turn-on Threshold VTH2 VHYST IIBIAS1 63 1 7.5 µA VD = -50mV IIBIAS2 23 100 µA VD = 200V 2 mV GBD 2 V Input Bias Current Comparator Input Offset VOFFSET Input CM Voltage Range VCM -0.15 -50 Units Hysteresis Input Bias Current -150 Max. mV mV One-Shot Section Symbol Min. Typ. Max. Units Blanking pulse duration Parameters tBLANK 10 9 15 20 25 µs Reset Threshold VTH3 Hysteresis VHYST3 Remarks 2.5 V VCC=10V - GBD 5.4 V VCC=20V - GBD 40 mV VCC=10V - GBD www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 3 IR1166S Minimum On Time Section Parameters Symbol TONmin Minimum on time Min. Typ. Max. Units 190 251 290 ns RMOT =5kW, VCC=12V 2.4 3 3.6 µs RMOT =75kW, VCC=12V Min. Typ. Max. Units 0.2 0.5 V 9.5 9 10.7 12.5 V VCC=12V-18V (internally clamped) Remarks Gate Driver Section Parameters Symbol Gate Low Voltage VGLO Gate High Voltage VGTH Rise Time Remarks IGATE = 200mA tr1 21 ns CLOAD = 1nF, VCC=12V tr2 181 ns CLOAD = 10nF, VCC=12V tf1 10 ns CLOAD = 1nF, VCC=12V tf2 44 ns CLOAD = 10nF, VCC=12V Turn on Propagation Delay tDon 52 80 ns VDS to VGATE -100mV overdrive Turn off Propagation Delay tDoff 35 65 ns VDS to VGATE -100mV overdrive Pull up Resistance rup 5 W IGATE = 1A - GBD Fall Time Pull down Resistance Output Peak Current (source) Output Peak Current (sink) ** rdown 1.2 W IGATE = -200mA IO source 1 A CLOAD = 10nF - GBD IO sink 4 A CLOAD = 10nF - GBD Guaranteed by Design STATE AND TRANSITIONS DIAGRAM POWER ON Gate Inactive UVLO MODE VCC < VCCon Gate Inactive ICC max = 200uA VCC > VCCon and ENABLE HIGH VCC < VCCuvlo or ENABLE LOW NORMAL Gate Active www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 4 IR1166S Block Diagram MOT VCC VCC UVLO & REGULATOR ENA VCC VD Min ON Time VTH1 RESET VS VGATE DRIVER COM OVT Min OFF Time Vgate RESET VTH3 VTH2 VTH1 VTH3 VDS Lead Assignments & Definitions 1 VCC 2 OVT 3 MOT 4 EN IR1166S Lead Assignment Pin# Symbol Description 1 VCC Supply Voltage 2 OVT Offset Voltage Trimming Minimum On Time VGATE 8 3 MOT GND 7 4 EN VS 6 5 VD FET Drain Sensing 6 VS FET Source Sensing VD 5 7 GND Ground 8 GATE www.irf.com PDF created with pdfFactory trial version www.pdffactory.com Enable Gate Drive Output 5 IR1166S Detailed Pin Description GND: Ground This is ground potential pin of the integrated control circuit. The internal devices and gate driver are referenced to this point. MOT: Minimum On Time The MOT programming pin controls the amount of minimum on time. Once VTH2 is crossed for the first time, the gate signal will become active and turn on the power FET. Spurious ringings and oscillations can trigger the input comparator off. The MOT blanks the input comparator keeping the FET on for a minimum time. The MOT is programmed between 200ns and 3us (typ.) by using a resistor referenced to GND. OVT: Offset Voltage Trimming The OVT pin will program the amount of input offset voltage for the turn-off threshold VTH1. The pin can be optionally tied to ground, to VCC or left floating, to select 3 ranges of input offset trimming. This programming feature allows for accomodating different RDSon MOSFETs. GATE: Gate Drive Output This is the gate drive output of the IC. Drive voltage is internally limited and provides 1A peak source and 4A peak sink capability. Although this pin can be directly connected to the power MOSFET gate, the use of minimal gate resistor is recommended, expecially when putting multiple FETs in parallel. Care must be taken in order to keep the gate loop as short and as small as possible in order to achieve optimal switching performance. kelvin contact as close as possible to the power MOSFET source pin. VD: Drain Voltage Sense VD is the voltage sense pin for the power MOSFET Drain. This is a high voltage pin and particular care must be taken in properly routing the connection to the power MOSFET drain. Additional filtering and or current limiting on this pin is not recommended as it would limit switching performance of the IC. VCC: Power Supply This is the supply voltage pin of the IC and it is monitored by the under voltage lockout circuit. It is possible to turn off the IC by pulling this pin below the minimum turn off threshold voltage, without damage to the IC. To prevent noise problems, a bypass ceramic capacitor connected to Vcc and GND should be placed as close as possible to the IR1166S. This pin is internally clamped. EN: Enable This pin is used to activate the IC “sleep” mode by pulling the voltage level below 2.5V (typ). In sleep mode the IC will consume a minimum amount of current. However all switching functions will be disabled and the gate will be inactive. VS: Source Voltage Sense VS is the differential sense pin for the power MOSFET Source. This pin must not be connected directly to the power ground pin (7) but must be used to create a www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 6 IR1166S STATES OF OPERATION GENERAL DESCRIPTION UVLO/Sleep Mode The IR1166 Smart Rectifier IC can emulate the operation of diode rectifier by properly driving a Synchronous Rectifier (SR) MOSFET. The direction of the rectified current is sensed by the input comparator using the power MOSFET RDSon as a shunt resistance and the GATE pin of the MOSFET is driven accordingly. Internal blanking logic is used to prevent spurious transitions and guarantee operation in continuous (CCM), discountinuous (DCM) and critical (CrCM) conduction mode. The IC remains in the UVLO condition until the voltage on the VCC pin exceeds the VCC turn on threshold voltage, VCC ON. During the time the IC remains in the UVLO state, the gate drive circuit is inactive and the IC draws a quiescent current of ICC START. The UVLO mode is accessible from any other state of operation whenever the IC supply voltage condition of VCC < V CC UVLO occurs. The sleep mode is initiated by pulling the EN pin below 2.5V (typ). In this mode the IC is essentially shut down and draws a very low quiescent supply current. VGate Normal Mode The IC enters in normal operating mode once the UVLO voltage has been exceeded. At this point the gate driver is operating and the IC will draw a maximum of ICC from the supply voltage source. VDS VTH2 VTH1 VTH3 Input comparator thresholds The modes of operation for a Flyback circuit differ mainly for the turn-off phase of the SR switch, while the turn-on phase of the secondary switch (which correspond to the turn off of the primary side switch) is identical. Turn-on phase When the conduction phase of the SR FET is initiated, current will start flowing through its body diode, generating a negative VDS voltage across it. The body diode has generally a much higher voltage drop than the one caused by the MOSFET on resistance and therefore will trigger the turn-on threshold VTH2. At that point the IR1166 will drive the gate of MOSFET on which will in turn cause the conduction voltage VDS to drop down. This drop is usually accompained by some amount of ringing, that can trigger the input comparator to turn off; hence, a Minimum On Time (MOT) blanking period is used that will maintain the power MOSFET on for a minimum amount of time. The programmed MOT will limit also the minimum duty www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 7 IR1166S cycle of the SR MOSFET and, as a consequence, the max duty cycle of the primary side switch. DCM/CrCM Turn-off phase Once the SR MOSFET has been turned on, it will remain on until the rectified current will decay to the level where VDS will cross the turn-off threshold VTH1. This will happen differently depending on the mode of operation. In DCM the current will cross the threshold with a relatively low dI/dt. Once the threshold is crossed, the current will start flowing again through the body diode, is blanked for a certain amount of time (TBLANK) after VTH1 has been triggered. The blanking time is internally set. As soon as VDS crosses the positive threshold VTH3 also the blanking time is terminated and the IC is ready for next conduction cycle. CCM Turn-off phase In CCM mode the turn off transition is much steeper and dI/dt involved is much higher. The turn on phase is identical to DCM or CrCM and therefore won’t be repeated here. During the SR FET conduction phase the current will decay linearly, and so will VDS on the SR FET. IPRIM VPRIM IPRIM VPRIM T1 T3 T2 time ISEC V SEC T1 T2 time ISEC VSEC time Primary and secondary currents and voltages for DCM mode Primary and secondary currents and voltages for CCM mode IPRIM VPRIM T1 T2 time ISEC VSEC time Once the primary switch will start to turn back on, the SR FET current will rapidly decrease crossing VTH1 and turning the gate off. The turn off speed is critical to avoid cross conduction on the primary side and reduce switching losses. also in this case a blanking period will be applied, but given the very fast nature of this transition, it will be reset as soon as VDS crosses VTH3. time Primary and secondary currents and voltages for CrCM mode causing the VDS voltage to jump negative. Depending on the amount of residual current, VDS may trigger once again the turn on threshold: for this reason VTH2 www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 8 IR1166S VTH3 ISEC V DS T1 T2 time VTH1 VTH2 Gate Drive time Blanking time MOT Secondary side CCM operation VTH3 ISEC VDS T1 T2 time VTH1 VTH2 Gate Drive time Blanking MOT 10us blanking Secondary side DCM/CrCM operation www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 9 IR1166S 11 VCC UVLO Threshold (V) 10 ISupply (mA) 1 0.1 10 9 VCC ON VCC UVLO 8 0.01 5 10 15 -50 20 0 50 100 Supply Voltage (V) Temperature ( °C ) Fig 1. Supply Current vs. Supply Voltage Fig 2. Under Voltage Lockout vs. Temp. 150 0 0 VTH2 Threshold (mV) VTH1 Threshold (mV) -5 -10 -15 -20 -50 -100 OVT = GND OVT = Floating OVT = V CC -25 -30 -50 0 50 100 150 -150 Temperature ( °C ) Fig 3. VTH1 vs. Temp. www.irf.com PDF created with pdfFactory trial version www.pdffactory.com -50 0 50 100 150 Temperature ( °C ) Fig 4. VTH2 vs. Temp. 10 IR1166S -6 VS = -150mV VS= 0V VS= +2V VTH1 Threshold (mV) Comparator Hysteresis VHYST (mV) 100 50 -12 0 -50 0 50 100 -50 150 0 50 100 150 Temperature ( °C ) Temperature ( °C ) Fig 5. Comparator Hysteresis vs. Temp. Fig 6. VTH1 vs. Temp. and Common Mode (OVT=Floating) -50 -50 Comparator Hysteresis (mV) VS = -150mV VS= 0V VS= +2V VTH2 Threshold (mV) -9 -100 -150 -100 VS = -150mV VS= 0V VS= +2V -150 -50 0 50 100 150 -50 Temperature ( °C ) Fig 7. VTH2 vs. Temp. and Common Mode (OVT=GND) 0 50 100 150 Temperature ( °C ) Fig 8. Comparator Hysteresis vs. Temp. and Common Mode (OVT=GND) www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 11 IR1166S 50 Input Bias Current (IBIAS2) (µA) Minimum On Time (µs) 4 3 2 1 RMOT = 5k RMOT= 75k 25 TJ = -25°C TJ = 25°C TJ = 125°C 0 0 -50 0 50 100 150 0 50 Temperature ( °C ) Fig 9. MOT vs. Temp. 150 200 Fig 10. Input Bias Current vs. VD. 20 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 19 18 17 16 15 14 13 12 Maximum Allowable VCC Voltage (V) 20 Maximum Allowable VCC Voltage (V) 100 Drain Sense Voltage (V D) (V) Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 19 18 17 16 15 14 13 12 11 11 50 50 100 150 200 250 300 350 400 450 500 100 150 200 250 300 350 400 450 500 Max. Synchronous HEXFET Switching Frequency (kHz) Max. Synchronous HEXFET Switching Frequency (kHz) Fig 11. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125 C, TIC = 85 C, external RG=1W, 1W HEXFET Gate Resistance included Fig 12. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125 C, TIC = 85 C, external RG=2W, 1W HEXFET Gate Resistance included www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 12 IR1166S 20 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 19 18 17 16 15 14 13 12 11 Maximum Allowable VCC Voltage (V) Maximum Allowable VCC Voltage (V) 20 Csync = 2nF Csync = 5nF Csync = 8nF Csync = 15nF Csync = 20nF 19 18 17 16 15 14 13 12 11 50 100 150 200 250 300 350 400 450 500 Max. Synchronous HEXFET Switching Frequency (kHz) Fig 13. Max. VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125 C, TIC = 85 C, external RG=4W, 1W HEXFET Gate Resistance included 50 100 150 200 250 300 350 400 450 500 Maximum Synchronous HEXFET Switching Frequency (kHz) Fig 14. Max VCC Voltage vs. Synchronous Rectifier Switching Freq, TJ=125 C, TIC = 85 C, external RG=6W, 1W HEXFET Gate Resistance included Figures 11-14 shows the maximum allowable VCC voltage vs. maximum switching frequency for different loads which are calculated using the design methodology discussed in AN1087. www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 13 IR1166S VCC VCC ON VCC UVLO t UVLO NORMAL UVLO Fig. 14 - Vcc Under Voltage Lockout VTH1 VDS V TH2 t Don t Doff V Gate 90% 50% 10% t rise tfall Fig. 15 - Timing Diagrams www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 14 IR1166S Case outline D DIM B 5 A FOOTPRINT 8 7 6 5 6 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] 6X e 3X 1.27 [.050] 8X 1.78 [.070] MILLIMETERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 A 8X 0.72 [.028] INCHES MIN MAX .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° e1 A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X c 8X L 7 C A B 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 2. CONTROLLING DIMENSION: MILLIMETER 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010]. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 01-6027 01-0021 11 (MS-012AA) 8-Lead SOIC Tape and Reel Information (SOIC 8-Lead only) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. www.irf.com PDF created with pdfFactory trial version www.pdffactory.com 15 IR1166S Part Marking Information IR1166S Order Information 8-Lead SOIC IR1166SPbF 8-Lead SOIC Tape and Reel IR1166STRPbF The SOIC-8 is MSL2 qualified This product has been designed and qualified for the Industrial market. Data and specifications subject to change without notice. Qualification Standards can be found at www.irf.com WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 1/2009 www.irf.com 16