KI SEMICONDUCTOR CO. SMALL SIGNAL SWITCHING DIODE 1SS81 REVERSE VOLTAGE: 150 V CURRENT: 200 mA DO - 35(GLASS) FEATURES Glass sealed envelope. (MSD) High reliability MECHANICAL DATA Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams Case: DO-35, glass case MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. 1SS81 UNITS Reverse voltage VR 150 V Peak reverse voltage (NOTE 1) VRM 200 V Power dissipation Pd 400 mW Peak forward current IFM 625 mA Non-Repetitive peak forw ard surge current (NOTE2) IFSM 1.0 A Average forward current Io 200 mA Maximum instantaneous f orw ard voltage @IF =100mA VF 1.0 V IR 0.2 100 μA Capacitance @VR=0V,f=1MHz CJ 1.5 pF Reverse recovery time @IF=IR=30mA,Irr=3mA,RL=100 Ω trr 100 ns Junction temperature TJ 175 TSTG - 65 ---- + 175 Maximum reverse current at rated DC blocking voltage Storage temperature range @V R=150V @VR=200V Notes:1.Reverse voltae in excess of peak reverse voltage may deteriorate electrical characteristic. 2.Within 1s forward surge current. 1 1SS81 FIG.2 -- REVERSE CHARACTERISTICS 100 10 –5 20 10 TA = 75°C 25 TA = 1 -2 5 125 REVERSE CURRENT, A 2 75 FORWARD CURRENT, mA FIG.1 --FORWARD CHARACTERISTICS 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 CAPACITANCE BETWEEN TERMINALS, pF FORWARD VOLTAGE, V FIG.3 -- CAPACITANCE BETWEEN TERMINALS CCCCCC CHARACTERISTICS 10–6 TA = 50°C 10 –7 TA = 25°C 10 –8 2.5 10 –9 0 50 150 100 200 250 1.5 FORWARD VOLTAGE, V 1 .5 0 0 5 15 10 20 25 30 REVERSE VOLTAGE, V FIG.5 -- REVERSE RECOVERY TIME (trr) MEASUREMENT CIRCUIT FIG.4 -- SURGE CURRENT CHARACTERISTICS 1.0 SURGE CURRENT, A 300 2 TJ=125 8.3ms Single Half Sine-Wave 0.75 0.01µF D.U.T 0.5 5K PULSE GENERATOR OUTPUT 50 0.25 0 1 2 4 8 10 20 40 60 80 100 NUMBER OF CYCLES 60Hz 2 50 SAMPLING OSCILLOSCOPE