ONSEMI ESD7951ST5G

ESD7951ST5G
Transient Voltage
Suppressors
ESD Protection Diodes with Ultra−Low
Capacitance
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The ESD7951 is designed to protect voltage sensitive components that
require ultra−low capacitance from ESD and transient voltage events.
Excellent clamping capability, low capacitance, low leakage, and fast
response time, make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its low capacitance, it is
suited for use in high frequency designs such as USB 2.0 high speed and
antenna line applications.
1
2
PIN 1.
2.
Specification Features:
2
• Ultra Low Capacitance 0.5 pF
• Low Clamping Voltage
• Small Body Outline Dimensions:
•
•
•
•
•
•
1
SOD−923
CASE 514AB
0.039″ x 0.024″ (1.00 mm x 0.60 mm)
Low Body Height: 0.016″ (0.4 mm)
Stand−off Voltage: 5 V
Low Leakage
Response Time is Typically < 1.0 ns
IEC61000−4−2 Level 4 ESD Protection
This is a Pb−Free Device
MARKING DIAGRAM
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
AA
M
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
IEC 61000−4−2 (ESD)
Symbol
Contact
Air
AA M
2
= Specific Device Code
= Date Code
ORDERING INFORMATION
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Rating
CATHODE
ANODE
Value
Unit
±8
±15
kV
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
°PD°
150
mW
Storage Temperature Range
Tstg
−55 to +150
°C
Junction Temperature Range
TJ
−55 to +125
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL
260
°C
Device
Package
Shipping†
ESD7951ST5G
SOD−923
(Pb−Free)
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 1
1
Publication Order Number:
ESD7951S/D
ESD7951ST5G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
I
Working Peak Reverse Voltage
IT
VC VBR VRWM IR
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
IPP
IR VRWM VBR VC
IT
V
IPP
Bi−Directional TVS
Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
VRWM
(V)
IR (mA)
@ VRWM
VBR (V) @ IT
(Note 2)
IT
C (pF)
VC (V)
@ IPP = 1 A
(Note 3)
VC
Per IEC61000−4−2
(Note 4)
Device
Device
Marking
Max
Max
Min
mA
Typ
Max
Max
ESD7951ST5G
AA
5.0
1.0
5.4
1.0
0.5
0.9
12.9
Figures 1 and 2
See Below
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Surge current waveform per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
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2
ESD7951ST5G
IEC61000−4−2 Waveform
IEC 61000−4−2 Spec.
Ipeak
Level
Test
Voltage
(kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1
2
7.5
4
2
2
4
15
8
4
3
6
22.5
12
6
4
8
30
16
8
100%
90%
I @ 30 ns
I @ 60 ns
10%
tP = 0.7 ns to 1 ns
Figure 3. IEC61000−4−2 Spec
ESD Gun
Oscilloscope
TVS
50 W
Cable
50 W
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
% OF PEAK PULSE CURRENT
100
PEAK VALUE IRSM @ 8 ms
tr
90
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
20
40
t, TIME (ms)
60
Figure 5. 8 X 20 ms Pulse Waveform
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3
80
ESD7951ST5G
PACKAGE DIMENSIONS
SOD−923
CASE 514AB−01
ISSUE B
D
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
E
1
b
2
2X
0.08 (0.0032) X Y
DIM
A
b
c
D
E
HE
L
A
c
L
HE
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.05
0.10
0.15
MIN
0.013
0.006
0.003
0.030
0.022
0.037
0.002
INCHES
NOM
0.015
0.008
0.005
0.031
0.024
0.039
0.004
MAX
0.016
0.010
0.007
0.033
0.026
0.041
0.006
SOLDERING FOOTPRINT*
0.90
0.40
0.30
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
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ESD7951S/D