IRG7PSH54K10DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 65A, TC =100°C tSC 10µs, TJ(max) = 150°C G C VCE(ON) typ. = 1.9V @ IC = 50A G E n-channel Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding E IRG7PSH54K10DPbF G Gate C Collector Features E Emitter Benefits Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number Package Type IRG7PSH54K10DPbF Super-247 High efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Standard Pack Form Quantity Tube 25 Orderable Part Number IRG7PSH54K10DPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. Units 1200 120 65 200 200 50 25 ±30 520 210 -40 to +150 V A V W 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) C Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA 1 Parameter Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) www.irf.com © 2013 International Rectifier Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Max. 0.24 0.70 ––– 40 Units °C/W April 16, 2013 IRG7PSH54K10DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance ICES Collector-to-Emitter Leakage Current IGES VF Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Min. 1200 — Typ. — 1.3 Max. — — — — 5.0 — — — — — — — 1.9 2.4 — -15 36 1.0 1800 — 2.5 2.1 2.4 IC = 50A, VGE = 15V, TJ = 25°C V — IC = 50A, VGE = 15V, TJ = 150°C 7.5 V VCE = VGE, IC = 2.4mA — mV/°C VCE = VGE, IC = 2.4mA (25°C-150°C) — S VCE = 50V, IC = 50A, PW = 20µs 45 VGE = 0V, VCE = 1200V µA — VGE = 0V, VCE = 1200V, TJ = 150°C ±200 nA VGE = ±30V 3.5 IF = 16A V — IF = 16A, TJ = 150°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Total Gate Charge (turn-on) — 290 Qg Gate-to-Emitter Charge (turn-on) — 60 Qge Qgc Gate-to-Collector Charge (turn-on) — 130 Eon Turn-On Switching Loss — 4.8 Eoff Turn-Off Switching Loss 2.8 Etotal Total Switching Loss 7.6 td(on) Turn-On delay time — 110 tr Rise time — 80 Turn-Off delay time — 490 td(off) Fall time — 70 tf Turn-On Switching Loss — 6.8 Eon Max Units Conditions 435 IC = 50A 90 nC VGE = 15V VCC = 600V 195 5.7 3.7 mJ IC = 50A, VCC = 600V, VGE=15V 9.4 RG = 5, TJ = 25°C 130 Energy losses include tail & diode 105 ns reverse recovery 520 90 — Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 — — Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 640 170 25 — — — — 4.7 11.5 85 90 490 290 5700 290 150 — — — — — — — Units Conditions V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 5mA (25°C-150°C) — — — — — — — — FULL SQUARE mJ ns IC = 50A, VCC = 600V, VGE=15V RG = 5, TJ = 150°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 200A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V µs V = +15V to 0V GE pF µJ ns A TJ = 150°C VCC = 600V, IF = 16A VGE = 15V, Rg = 5 Notes: VCC = 80% (VCES), VGE = 20V R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2013 International Rectifier April 16, 2013 IRG7PSH54K10DPbF 120 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 213W Load Current ( A ) 100 80 60 Square Wave: VCC 40 I 20 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 125 600 100 500 400 IC (A) Ptot (W) 75 50 300 200 25 100 0 25 50 75 100 125 0 150 25 50 75 100 125 150 TC (°C) TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 1000 1000 100 100 10 100µsec 10 1msec 1 Tc = 25°C Tj = 150°C Single Pulse DC 1 0.1 1 10 100 1000 10000 VCE (V) Fig. 4 - Forward SOA TC = 25°C, TJ 150°C, VGE =15V 3 IC (A) IC (A) 10µsec www.irf.com © 2013 International Rectifier 10 100 1000 10000 VCE (V) Fig. 5- Reverse Bias SOA TJ = 150°C; VGE = 20V April 16, 2013 IRG7PSH54K10DPbF 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V 120 160 ICE (A) ICE (A) 160 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V 80 120 80 40 40 0 0 0 1 2 3 4 5 6 7 8 9 0 10 8 10 200 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 9.0V VGE = 8.0V 160 120 160 TJ =150°C TJ = 25°C 120 IF (A) ICE (A) 6 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs TJ = -40°C 80 80 40 40 0 0 0 1 2 3 4 5 6 7 8 9 0.0 10 V CE (V) 4.0 6.0 8.0 10.0 Fig. 9 - Typ. Diode Forward Characteristics tp = 20µs 10 10 8 8 VCE (V) ICE = 25A 6 2.0 V F (V) Fig. 8 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 20µs VCE (V) 4 V CE (V) V CE (V) ICE = 50A ICE = 100A 4 2 ICE = 25A 6 ICE = 50A ICE = 100A 4 2 0 0 6 8 10 12 14 16 18 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = -40°C 4 2 www.irf.com © 2013 International Rectifier 6 8 10 12 14 16 18 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 25°C April 16, 2013 IRG7PSH54K10DPbF 10 IC, Collector-to-Emitter Current (A) 200 VCE (V) 8 ICE = 25A 6 ICE = 50A ICE = 100A 4 2 TJ = 25°C TJ = 150°C 160 120 80 40 0 0 6 8 10 12 14 16 18 4 20 6 8 10 V GE (V) Fig. 12 - Typical VCE vs. VGE TJ = 150°C 19 14 Fig. 13 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 1000 tdOFF 17 Swiching Time (ns) 15 13 Energy (mJ) 12 V GE, Gate-to-Emitter Voltage (V) 11 EON 9 7 tF tdON 100 tR EOFF 5 3 1 10 0 25 50 75 100 0 25 50 75 100 IC (A) IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V 10000 18 16 tdOFF 1000 Swiching Time (ns) Energy (mJ) 14 EON 12 10 EOFF 8 tdON tR tF 100 10 6 1 4 0 20 40 60 80 100 120 RG () Fig. 16 - Typ. Energy Loss vs. RG TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V 5 www.irf.com © 2013 International Rectifier 0 20 40 60 80 100 RG () Fig. 17 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V April 16, 2013 IRG7PSH54K10DPbF IRG7PH50K10DPbF/IRG7PH50K10D-EPbF 30 28 RG = 25 24 20 IRR (A) IRR (A) RG = 10 RG = 47 15 20 16 RG = 100 10 12 5 8 8 12 16 20 24 28 32 0 25 50 3400 3000 24 32A QRR (nC) 2600 IRR (A) 125 Fig. 19 - Typ. Diode IRR vs. RG TJ = 150°C 28 20 16 2200 16A 1800 12 1400 8 1000 0 100 200 300 400 8A 50 500 100 150 200 250 300 350 400 450 diF /dt (A/µs) diF /dt (A/µs) Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150°C Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 16A; TJ = 150°C 1000 900 800 RG = 700 Time (µs) RG = 47 600 RG = 100 500 RG =10 400 300 200 100 4 12 20 28 36 IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 150°C www.irf.com © 2013 International Rectifier 40 450 35 400 30 350 300 25 Tsc 20 Isc 250 15 200 10 150 Current (A) Energy (µJ) 100 RG () IF (A) Fig. 18 - Typ. Diode IRR vs. IF TJ = 150°C 6 75 100 5 9 10 11 12 13 14 15 16 VGE (V) Fig. 23 - VCE vs. Short Circuit Time Vcc= 600V; TC= 150°C April 16, 2013 IRG7PSH54K10DPbF 10000 16 1000 100 Coes Cres VCES = 600V 14 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) Cies VCES = 400V 12 10 8 6 4 2 10 0 0 100 200 300 400 500 600 0 VCE (V) 50 100 150 200 250 300 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 50A Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Thermal Response ( ZthJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 J R1 R1 J 1 1E-005 R3 R3 R4 R4 C 2 1 2 3 4 3 C 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R2 R2 Ri(°C/W) i (sec) 0.0030 0.00001 0.0606 0.00026 0.1091 0.00472 0.0667 0.02724 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 Thermal Response ( ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 4 C Ri(°C/W) i (sec) 0.0259 0.00009 0.2435 0.00038 0.2877 0.00539 0.1431 0.03019 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 7 www.irf.com © 2013 International Rectifier April 16, 2013 IRG7PSH54K10DPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com © 2013 International Rectifier Fig.C.T.6 - BVCES Filter Circuit April 16, 2013 IRG7PSH54K10DPbF 600 80 400 60 300 90% ICE 40 10% VCE 100 60 200 100 20 10% ICE 0 0 -100 -20 1 -20 -0.8 -0.6 -0.4 -0.2 1.5 0 0.2 0.4 time (µs) time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 20 700 tRR Vce (V) IF (A) 0 -10 Peak IRR -20 VC 600 QRR 10 700 600 500 500 400 400 ICE 300 300 200 200 100 100 0 -30 -0.20 -0.05 0.10 0.25 0.40 0.55 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 9 www.irf.com © 2013 International Rectifier Ice (A) 0.5 0 Eon Loss Eoff Loss 0 20 10% VCE 0 -100 40 90% ICE 10%ICE 100 80 TEST CURRENT ICE (A) 500 VCE (V) 300 100 ICE (A) VCE (V) 400 -0.5 120 tr tf 500 200 600 120 0 -100 -20.00 -10.00 0.00 -100 10.00 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 April 16, 2013 IRG7PSH54K10DPbF Super -247(TO-274AA) Package Outline Dimensions are shown in millimeters (inches) Super -247 (TO-274AA)Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" PART NUMBER INTERNATIONAL RECTIFIER LOGO IRFPS37N50A 719C 17 89 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DATE CODE YEAR 7 = 1997 WEEK 19 LINE C TOP Super -247 package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier April 16, 2013 IRG7PSH54K10DPbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level Super-247 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11 www.irf.com © 2013 International Rectifier April 16, 2013