ONSEMI CPH5541

Ordering number : EN8223A
CPH5541
Bipolar Transistor
http://onsemi.com
(–)30V, (–)3A, Low VCE(sat) Complementary Dual CPH5
Applications
•
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers
Features
•
•
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting
Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)
Specifications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Unit
(--30)40
V
(--)30
V
(--)5
V
(--)700
mA
PW≤10μs
(--)3
A
Mounted on a ceramic board (600mm2×0.8mm)
0.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7017A-006
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
4
CPH5541-TL-E
0.15
2.9
5
3
Packing Type : TL
Marking
0.9
1
0.95
2
LOT No.
EJ
0.05
1.6
0.2
0.6
2.8
0.2
0.6
Package Dimensions
TL
0.4
1 : Collector1
2 : Collector2
3 : Base2
4 : Emitter Common
5 : Base1
Electrical Connection
5
4
3
CPH5
1
Semiconductor Components Industries, LLC, 2013
September, 2013
2
62712 TKIM/21005EA TSIM TB-00001169 No.8223-1/8
CPH5541
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
ICBO
IEBO
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--10)50mA
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=(--)10V, f=1MHz
IC=(--)200mA, IB=(--)10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
min
typ
max
(200)300
VCE=(--)2V, IC=(--)50mA
(--)100
nA
(--)100
nA
(500)800
(520)540
MHz
(4.7)3.3
IC=(--)200mA, IB=(--)10mA
Unit
pF
(--110)85
(--220)190
(--)0.9
(--)1.2
(--30)40
mV
V
V(BR)CBO
V(BR)CEO
IC=(--)10μA, IE=0A
V
IC=(--)1mA, RBE=∞
(--)30
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)5
V
tstg
tf
See specified Test Circuit.
35
ns
(125)255
ns
(25)40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=12V
20IB1= --20IB2=IC=300mA
For PNP, minus sign is omitted.
Ordering Information
Device
CPH5541-TL-E
Package
Shipping
memo
CPH5
3,000pcs./reel
Pb Free
No.8223-2/8
CPH5541
[PNP]
--400
600
--3mA
--2mA
--300
IC -- VCE
700
--1mA
--200
--500μA
500
15m
A
A
--20m
A
--15m
A
--10m
A
--7m
--5mA
30m 20m
A
A
--500
0
--3
mA
--25
Collector Current, IC -- mA
---50
mA 40mA
--600
Collector Current, IC -- mA
mA
[NPN]
7mA
A
10m
5mA
3mA
2mA
400
1mA
50m
A
IC -- VCE
--700
300
400μA
200
200μA
100
--100
0
0
IB=0mA
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
IC -- VBE
--800
IB=0mA
100
IT05049
[PNP]
200
300
400
500
600
700
IT05082
IC -- VBE
[NPN]
800
VCE=2V
--400
--300
--200
500
400
300
--25°C
--500
600
Ta=7
5°C
25°C
Collector Current, IC -- mA
--600
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- mA
700
200
100
--100
0
0
--0.2
0
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0
--1.2
[PNP]
DC Current Gain, hFE
--25°C
2
100
0.8
1.0
IT05083
[NPN]
VCE=2V
Ta=75°C
7
3
0.6
hFE -- IC
1000
Ta=75°C
25°C
5
0.4
Base-to-Emitter Voltage, VBE -- V
VCE= --2V
7
0.2
IT05050
hFE -- IC
1000
DC Current Gain, hFE
1000
Collector-to-Emitter Voltage, VCE -- mV
VCE= --2V
--700
900
800
25°C
5
--25°C
3
2
7
5
3
--1.0
2
3
5 7 --10
3
2
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
[PNP]
IC / IB=20
7
5
3
2
--100
7
5°C
5
7
Ta=
5°C
--2
5°C
3
2
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05054
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
--1000
100
1.0
5 7--1000
IT05051
VCE(sat) -- IC
1000
7
5
5 7 1000
IT05084
[NPN]
IC / IB=20
3
2
100
7
5
25
°C
5°C
3
2
7
Ta=
5°C
--2
10
7
5
3
2
1.0
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05085
No.8223-3/8
CPH5541
VCE(sat) -- IC
3
[PNP]
--1000
7
5
3
2
5°C
--100
7
7
Ta=
C
5°
--2
5
3
C
25°
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
VBE(sat) -- IC
--10
[PNP]
2
Ta= --25°C
75°C
5
25°C
3
2
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Cob -- VCB
10
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
3
2
5
7
--10
2
2
3
5 7 100
2
IT05053
f T -- IC
[PNP]
[NPN]
IC / IB=20
5
3
2
1.0
Ta= --25°C
7
5
75°C
25°C
3
2
2
5 7 10
3
2
3
5 7 100
2
[NPN]
f=1MHz
7
5
3
2
2
3
5
7
10
2
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05052
3
Collector-to-Base Voltage, VCB -- V
fT -- IC
1000
Gain-Bandwidth Product, fT -- MHz
Gain-Bandwidth Product, f T -- MHz
5
5 7 1000
IT05087
3
Cob -- VCB
5
IT05088
[NPN]
VCE=10V
VCE= --10V
7
5 7 1000
3
IT05086
VBE(sat) -- IC
1.0
1.0
5
3
Collector-to-Base Voltage, VCB -- V
1000
5 7 10
3
10
5
3
2
[PNP]
7
2
3
Collector Current, IC -- mA
f=1MHz
0.1
--1.0
°C
75
5°C
--2
=
Ta
2
0.1
1.0
5 7--1000
IT05056
Collector Current, IC -- mA
°C
7
5
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
7
25
100
7
5
--1.0
3
2
Collector Current, IC -- mA
IC / IB=20
7
5
10
1.0
5 7--1000
IT05055
Collector Current, IC -- mA
[NPN]
IC / IB=50
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
VCE(sat) -- IC
1000
IC / IB=50
7
5
3
2
100
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05089
No.8223-4/8
CPH5541
100
7
5
Ron -- IB
f=1MHz
1kΩ
IB
10
7
5
3
2
1.0
7
5
3
OUT
IN
1kΩ
5
2
[NPN]
1kΩ
f=1MHz
7
OUT
ON Resistance, Ron -- Ω
ON Resistance, Ron -- Ω
10
IN
3
Ron -- IB
[PNP]
1kΩ
3
IB
2
1.0
7
5
3
2
2
0.1
--0.1
2
3
5
7
2
--1.0
3
5
Base Current, IB -- mA
3
ASO
[PNP / NPN]
10
s
0μ
1.0
0m
s
op
1m
DC
3
10
s
era
2
s
0μ
IC=0.7A
ms
50
7
5
10
tio
n
0.1
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2×0.8mm)
For PNP, minus sign is omitted
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
5
7
2
1.0
3
5
Base Current, IB -- mA
PC -- Ta
700
ICP=3A
2
Collector Current, IC -- A
--10
IT06403
Collector Dissipation, PC -- mW
5
0.1
0.1
7
7
10
IT06793
[PNP / NPN]
600
M
ou
nt
500
ed
on
ac
er
400
am
ic
bo
ar
300
d
(6
00
m
200
m2
×0
.8
m
m
)
100
0
2
Collector-to-Emitter Voltage, VCE -- V
3
5
IT08992
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT08993
No.8223-5/8
CPH5541
Embossed Taping Specification
CPH5541-TL-E
No.8223-6/8
CPH5541
Outline Drawing
CPH5541-TL-E
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.8223-7/8
CPH5541
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PS No.8223-8/8