IRF AUIRLR120N

PD - 97624
AUTOMOTIVE GRADE
•
•
•
•
•
•
•
•
•
•
Advanced Planar Technology
Logic-Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175ºC Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
AUIRLR120N
HEXFET® Power MOSFET
D
V(BR)DSS
100V
RDS(on) max.
G
S
0.185Ω
ID
10A
D
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
G
D-Pak
AUIRLR120N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
10
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
7.0
Pulsed Drain Current
35
IDM
c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
d
Units
A
48
0.32
± 16
W
W/°C
V
mJ
EAS
Single Pulse Avalanche Energy (Thermally Limited)
85
IAR
Avalanche Current
6.0
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
4.8
5.0
-55 to + 175
mJ
V/ns
TJ
TSTG
c
e
c
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
°C
300
Thermal Resistance
RθJC
RθJA
RθJA
g
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
3.1
50
110
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
01/19/11
AUIRLR120N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
∆V(BR)DSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
–––
–––
1.0
3.1
–––
–––
–––
–––
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.185
0.225
0.265
2.0
–––
25
250
100
-100
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.0A
Ω VGS = 5.0V, ID = 6.0A
VGS = 4.0V, ID = 5.0A
V VDS = VGS, ID = 250µA
S VDS = 25V, ID = 6.0A
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
nA VGS = 16V
VGS = -16V
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
35
23
22
4.5
20
4.6
10
–––
–––
–––
–––
–––
nC
ns
nH
Conditions
ID = 6.0A
VDS = 80V
VGS = 5.0V, See Fig. 6 & 13
VDD = 50V
ID = 6.0A
RG = 11Ω, VGS = 5.0V,
RD = 8.2Ω, See Fig. 10
Between lead,
f
f
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Input Capacitance
–––
440
–––
and center of die contact
VGS = 0V
Coss
Output Capacitance
–––
97
–––
Crss
Reverse Transfer Capacitance
–––
50
–––
D
G
S
VDS = 25V
pF
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
IS
Min. Typ. Max. Units
Conditions
–––
–––
10
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
–––
–––
35
VSD
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
trr
Reverse Recovery Time
–––
110
160
ns
TJ = 25°C, IF = 6.0A
Qrr
Reverse Recovery Charge
–––
410
620
nC
di/dt = 100A/µs
ton
c
Forward Turn-On Time
A
V
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 6.0A, VGS = 0V
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH
… Rθ is measured at TJ approximately 90°C.
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 6.0A. (See Figure 12)
ƒ ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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AUIRLR120N
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M2 (+/- 150V)
AEC-Q101-002
†††
Human Body Model
Class H1A (+/- 500V)
AEC-Q101-001
†††
Charged Device
Model
Class C5 (+/- 2000V)
AEC-Q101-005
†††
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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3
AUIRLR120N
100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5V
20µs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
A
10
2.5V
1
100
3.0
TJ = 175°C
1
VDS = 50V
20µs PULSE WIDTH
6
8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
4
10
A
100
Fig 2. Typical Output Characteristics
100
0.1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
T J = 175°C
0.1
0.1
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
A
I D = 10A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRLR120N
Ciss
600
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
Coss
Crss
0
1
10
V DS = 80V
V DS = 50V
V DS = 20V
12
400
200
I D = 6.0A
100
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
VDS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10µs
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
5
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.4
10
100µs
1ms
1
10ms
TC = 25°C
TJ = 175°C
Single Pulse
0.1
1
10
100
A
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLR120N
V DS
10
VGS
D.U.T.
RG
8
ID, Drain Current (Amps)
RD
+
-VDD
6
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
A
0
25
50
75
100
125
150
90%
175
TC , Case Temperature (°C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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15V
L
VDS
D.U.T
RG
IAS
10V
tp
DRIVER
+
V
- DD
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
E AS , Single Pulse Avalanche Energy (mJ)
AUIRLR120N
200
TOP
BOTTOM
160
ID
2.4A
4.2A
6.0A
120
80
40
A
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
5.0 V
QG
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRLR120N
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
ƒ
+
‚
-
-
„
+

+
RG
•
•
•
•
Driver Gate Drive
Period
P.W.
-
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
VDD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
8
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AUIRLR120N
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AULR120N
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRLR120N
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR120N
Ordering Information
Base part
number
Package Type
AUIRLR120N
Dpak
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Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
75
2000
3000
3000
AUIRLR120N
AUIRLR120NTR
AUIRLR120NTRL
AUIRLR120NTRR
11
AUIRLR120N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)
reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers designated
with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale
supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their
products and applications using IR components. To minimize the risks with customer products and applications,
customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this
information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and is an unfair
and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant
into the body, or in other applications intended to support or sustain life, or in any other application in which the failure
of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use
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Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,
damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent
regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the
IR products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by
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compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive
applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
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