SBRT4U60LP 4A TRENCH SUPER BARRIER RECTIFIER Product Summary (@TA = +25°C) ADVANCED ADVANCE NEWINFORMATION PRODUCT INFORMATION INFORMATION ADVANCE ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED IN FORMATION VRRM (V) 60 IO (A) 4 VF MAX (V) 0.52 Features and Benefits IR MAX (µA) 150 • Reduced Ultra-Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation • Reduced High Temperature Reverse Leakage; Increased Reliability Against Thermal Runaway Failure in High Temperature Operation Description and Applications The SBRT4U60LP is a 4A, 60V single rectifier packaged in the low profile DFN3030 package. Providing low VF and excellent high temperature stability, this device is ideal for use in general rectification applications such as: • Bypass Diode • Boost Diode • Blocking Diode • Recirculating Diode • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • • Case: U-DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu Annealed over Copper Lead Frame Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.0172 grams (approximate) Ordering Information (Note 4) Part Number SBRT4U60LP-7 Notes: Case U-DFN3030-8 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information T4U60 = Product Type Marking Code YYWW = Date Code Marking Y Y= Last two digit of year (ex: 14 for 2014) WW = Week code 01 to 53 SBR is registered trademarks of Diodes Incorporated. SBRT4U60LP Document number: DS36791 Rev. 4 - 2 1 of 5 www.diodes.com August 2014 © Diodes Incorporated SBRT4U60LP Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. ADVANCED ADVANCE NEWINFORMATION PRODUCT INFORMATION INFORMATION ADVANCE ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED IN FORMATION Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VRM 60 V Average Rectified Output Current IO 4 A IFSM 25 A Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) RθJA 110 °C/W Typical Thermal Resistance Junction to Case (Note 5) RθJC 10 °C/W Typical Thermal Resistance Junction to Ambient (Note 6) RθJA 70 °C/W Typical Thermal Resistance Junction to Case (Note 6) RθJC 4 °C/W Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Operating and Storage Temperature Range PTOT 1.4 W TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit — 0.52 — — V Test Condition IF = 2A, TJ = +25°C IF = 4A, TJ = +25°C IF = 2A, TJ = +125°C IF = 4A, TJ = +125°C Forward Voltage Drop VF — — 0.38 0.46 0.33 0.45 Leakage Current (Note 7) IR — — 30 6 150 — μA mA VR = 60V, TJ = +25°C VR = 60V, TJ = +125°C Total capacitance CT — 180 — pF VR = 5V, f = 1MHz 5. Device mounted on FR-4 substrate, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf. 6. Device mounted on FR-4 substrate, 2 oz. Copper, 1 sq. inch Cu pad. 7. Short duration pulse test used to minimize self-heating effect. 10 IR, INSTANTANEOUS REVERSE CURRENT (µA) IF, INSTANTANEOUS FORWARD CURRENT (A) Notes: T A = 175°C 1 T A = 150°C TA = 125°C 0.1 TA = 85°C T A = 25°C TA = -55°C 0.01 100000 TA = 175°C T A = 150°C 10000 0 100 200 300 400 500 600 700 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 1 Typical Forward Characteristics T A = 125°C 1000 TA = 85°C 100 T A = 25°C 10 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 2 Typical Reverse Characteristics SBR is registered trademarks of Diodes Incorporated. SBRT4U60LP Document number: DS36791 Rev. 4 - 2 2 of 5 www.diodes.com August 2014 © Diodes Incorporated SBRT4U60LP 700 P(pk), PEAK TRANSIENT POWER (W) CT, JUNCTION CAPACITANCE (pF) ADVANCED ADVANCE NEWINFORMATION PRODUCT INFORMATION INFORMATION ADVANCE ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED IN FORMATION 10000 f = 1MHz 1000 100 Single Pulse RθJA = 116°C/W RθJA(t) = RθJA * r(t) TJ - TA = P * RθJA (t) Note 6 600 500 400 300 200 100 10 0 5 10 15 20 25 30 35 VR, DC REVERSE VOLTAGE (V) Figure 3 Typical Junction Capacitance r(t), TRANSIENT THERMAL RESISTANCE 1 40 0 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 4 Single Pulse Maximum Power Dissipation D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Note 6 RθJA(t) = r(t) * RθJA RθJA = 116°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.001 0.01 0.1 1 10 100 t1, PULSE DURATION TIME (sec) Figure 5 Transient Thermal Resistance 1000 10000 TA, DERATED AMBIENT TEMPERATURE (°C) 175 Note 5 150 125 100 75 50 25 0 0 6 12 18 24 30 36 42 48 54 VR, DC REVERSE VOLTAGE (V) Figure 6 Operating Temperature Derating 60 SBR is registered trademarks of Diodes Incorporated. SBRT4U60LP Document number: DS36791 Rev. 4 - 2 3 of 5 www.diodes.com August 2014 © Diodes Incorporated SBRT4U60LP Package Outline Dimensions ADVANCED ADVANCE NEWINFORMATION PRODUCT INFORMATION INFORMATION ADVANCE ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED IN FORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A1 e b .2 R0 E U-DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE 00 E2 L D2 D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Z Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 X1 X2 G Y C SBR is registered trademarks of Diodes Incorporated. SBRT4U60LP Document number: DS36791 Rev. 4 - 2 4 of 5 www.diodes.com August 2014 © Diodes Incorporated SBRT4U60LP IMPORTANT NOTICE ADVANCED ADVANCE NEWINFORMATION PRODUCT INFORMATION INFORMATION ADVANCE ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED IN FORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com SBR is registered trademarks of Diodes Incorporated. SBRT4U60LP Document number: DS36791 Rev. 4 - 2 5 of 5 www.diodes.com August 2014 © Diodes Incorporated