TLC271, TLC271A, TLC271B CMOS PROGRAMMABLE LOW POWER OPERATIONAL AMPLIFIERS Description Pin Assignments New Product The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and AC performance for a particular application. (Top View) Using the bias-select option, these devices can be programmed to fit a wide range of applications. Three offset voltage grades are available, ranging from the low-cost TLC271 (10mV) to the TLC271B (2mV) low-offset version. The devices are offered in both commercial and industrial operating temperature ranges. OFFSET N1 1OUT IN1IN- The extremely high input impedance and low bias currents, in conjunction with good common-mode and supply voltage rejection make these devices an excellent choice for high performance designs. 1 8 2 IN+ 1IN+ 3 GND Vcc- 4 7 BIAS Vcc+ SELECT V 2OUT DD 6 5 OUT 2INOFFSET N2 2IN+ SO-8 The devices also feature low-voltage single-supply operation with a common-mode input voltage range which includes the negative rail. Features Applications With the programmability options of the TLC271, a designer can choose a very low current option allowing for extended battery life or choose a higher current option for more performance. It is possible to switch performance modes as the application demands change. Wide range of supply voltages over specified temperature range: 0°C to 70°C . . . 3 V to 16 V -40°C to 85°C . . . 4 V to 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail Low Noise: 20 nV/√Hz Typical @ f = 1kHz (High-Bias Mode) Output Voltage Range Includes Negative Rail High Input Impedance ESD-Protection Circuitry Designed-In Latch-Up Immunity Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The TLC271 is well suited for many consumer audio, industrial and other low power applications. Notes: Audio Microphone Preamplifier Filtering – Equalizers Signal Amplification Industrial Power Supply Instrumentation Metering Medical Portable Meters and Measurement Instrumentation 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 1 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Ordering Information Device Package Code Offset Voltage S S S S S S 10mV 5mV 2mV 10mV 5mV 2mV TLC271CS-13 TLC271ACS-13 TLC271BCS-13 TLC271IS-13 TLC271AIS-13 TLC271BIS-13 Note: Operating Temperature Range 13” Tape and Reel Part Number Suffix Packaging (Note 4) Quantity SO-8 SO-8 SO-8 SO-8 SO-8 SO-8 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel 0 to 70°C 0 to 70°C 0 to 70°C -40 to 85°C -40 to 85°C -40 to 85°C -13 -13 -13 -13 -13 -13 4. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. Pin Descriptions Pin Name Pin number OFFSET N1 1 Offset Control Inverting Input Description IN- 2 Inverting Input IN+ 3 Non-Inverting Input GND 4 Ground OFFSET N2 5 Offset Control Non-Inverting Input OUT 6 Output VDD 7 Supply BIAS SELECT 8 Bias Mode Select TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 2 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Absolute Maximum Ratings (Notes 5, 6, 7, 8, 9) Symbol Parameter Unit VDD Supply Voltage (Note 6) 18 V VID Differential Input Voltage (Note 7) ±VDD V VIN Input Voltage Range (either input) -0.3 to VDD V IIN Input Current ±5 mA I° Output Current ±30 mA Output Short-Circuit to GND (Note 8) New Product Rating PD Power Dissipation (Note 9) TA Operating Temperature Range TJ Operating Junction Temperature TST Storage Temperature Range ESD HBM Notes: Continuous 1065 mW C Grade 0 to +70 I Grade -40 to +85 °C 150 °C -65 to +150 °C 1.5 kV Human Body Model ESD Protection (1.5kΩ in series with 100pF) 5. Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6. All voltage values, except differential voltages, are with respect to ground. 7. Differential input voltages are at IN+ with respect to IN-. 8. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded. 9. For operating at high temperatures, the TLC271 must be derated 8.5mW/°C to zero based on a +150°C maximum junction temperature and a thermal resistance of +117 °C/W when the device is soldered to a printed circuit board, operating in a still air ambient. Recommended Operating Conditions Symbol VDD Supply Voltage VIC Common Mode Input Voltage TA C grade Parameter Operating Free Air Temperature TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 I grade Unit Min Max Min Max 3 16 4 16 V VDD = 5V -0.2 3.5 -0.2 3.5 V VDD = 10V -0.2 8.5 -0.2 8.5 0 +70 -40 +85 3 of 51 www.diodes.com °C November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics High Bias Mode TLC271C, TLC271AC, TLC271BC Parameter Conditions New Product TLC271C VI° Input Offset Voltage TLC271AC TLC271BC αVI° TA VDD = 5V Min Typ Max +25°C V° = 1.4V, VIC = 0 to +70°C ° +25 C 0V, RS = ° 50Ω, RL = 0 to 70 C ° 10kΩ 25 C ° 0 to +70 C Average Temperature Coefficient of Input Offset Voltage ° V° = VDD/2, VIC +25 C ° = VDD/2 +70 C IIB Input Bias Current (Note 10) V° = VDD/2, VIC +25 C ° = VDD/2 +70 C ° 0.34 2 3 5 6.5 0.39 2 3 1.8 2 mV µV/°C 0.1 60 0.1 60 7 300 7 300 0.6 60 0.7 60 40 600 50 600 pA pA -0.2 to 3.5 -0.2 to 8.5 V 3.2 3.8 8 8.5 3 3.8 8.5 3.8 7.8 3 7.8 8.4 ° 0 50 0 50 0 50 0 50 ° 0 50 0 50 5 23 10 36 4 27 42 20 7.5 4 7.5 32 65 80 85 84 65 60 60 88 +70 C 60 85 60 88 +25°C VDD = 5V to 10V, 0°C V° = 1.4V +70°C 65 95 65 95 Supply Voltage Rejection Ratio (∆VDD/∆VI°) 60 94 60 94 60 96 60 96 Input Current (BIAS SELECT) VI(SEL) = 0 +25°C -1.4 +25°C 675 1600 775 1800 +70°C 575 1300 ° 0 to +70 C High Level Output Voltage VID = 100mV, RL = 10kΩ ° 0C ° +70 C Low Level Output Voltage VID = -100mV, I°L = 0 ° 0C +70 C Large Signal Differential Voltage Gain RL = 10kΩ (Note 12) +25 C ° 0C ° +70 C ° +25 C CMRR Common Mode Rejection Ratio VIC = VICRmin ° 0C ° Supply Current V° = VDD/2, VIC = VDD/2, No 0°C load Notes: 6.5 12 0.9 V ° IDD Common Mode Input Voltage (Note 11) +25 C II(SEL) 5 10 -0.2 to -0.3 to 9 9.2 ° kSVR 12 0.9 1.1 +25 C +25 C AVD Unit -0.2 to -0.3 to 4 4.2 ° V°L 10 ° Input Offset Current (Note 10) V°H 1.1 +25°C to 70 C II° VICR VDD = 10V Min Typ. Max V mV V/mV dB dB -1.9 µA 950 2000 1125 2200 750 1700 µA 10. The typical values of input bias current and input offset current below 5pA were calculated. 11. This range also applies to each input individually. 12. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 4 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics High bias mode TLC271I, TLC271AI, TLC271BI Parameter Conditions TA ° New Product TLC271I VI° Input Offset Voltage TLC271AI TLC271BI αVI° +25 C ° V° = 1.4V, VIC = -40 to 85 C ° +25 C 0V, RS = ° 50Ω, RL = -40 to 85 C ° 10kΩ +25 C ° -40 to 85 C Average Temperature Coefficient of Input Offset Voltage IIB Input Bias Current (Note 13) V° = VDD/2, VIC +25 C ° = VDD/2 +85 C ° ° +25 C ° -40 to +85 C ° +25 C High Level Output Voltage VID = 100mV, RL = 10kΩ ° -40 C ° +85 C ° +25 C V°L Low Level Output Voltage VID = -100mV, I°L = 0 ° -40 C ° +85 C ° AVD Large Signal Differential Voltage Gain RL = 10kΩ (Note 15) +25 C ° -40 C ° +85 C ° +25 C CMRR Common Mode Rejection Ratio VIC = VICRmin ° -40 C ° +85 C ° kSVR II(SEL) Supply Voltage Rejection Ratio (∆VDD/∆VI°) +25 C VDD = 5V to 10V, ° -40 C V° = 1.4V ° +85 C Input Current (BIAS SELECT) VI(SEL) = 0 ° +25 C ° +25 C IDD Supply Current V° = VDD/2, VIC ° = VDD/2, No -40 C load Notes: ° +85 C 0.9 5 7 0.34 2 3.5 VDD = 10V Min Typ. Max 1.1 10 13 1.8 ° V° = VDD/2, VIC +25 C ° = VDD/2 +85 C V°H ° Input Offset Current (Note 13) Common Mode Input Voltage (Note 14) +25 to 85 C II° VICR VDD = 5V Min Typ Max 1.1 10 13 60 24 1000 0.6 200 5 7 0.39 2 3.5 2 0.1 0.9 Unit mV µV/°C 0.1 60 26 1000 60 0.7 60 2000 220 2000 pA pA -0.2 to -0.3 to 4 4.2 -0.2 to -0.3 to 9 9.2 V -0.2 to 3.5 -0.2 to 8.5 V 3.2 3.8 8 8.5 7.8 8.5 7.8 8.5 0 50 3 3.8 3 3.8 0 50 0 50 0 50 0 50 0 50 5 23 10 36 3.5 32 7 46 3.5 19 7 31 65 80 65 85 60 81 60 87 60 86 60 88 65 95 65 95 60 92 60 92 60 96 60 96 -1.4 675 1600 950 2200 525 1200 V mV V/mV dB -1.9 950 2000 1375 2500 725 1600 dB µA µA 13. The typical values of input bias current and input offset current below 5pA were calculated. 14. This range also applies to each input individually. 15. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 5 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics High bias mode: VDD = 5V Parameter Conditions RL = 10kΩ, CL = 20pF SR TA Typ 3.6 ° ° 0C +70 C Slew Rate at Unity Gain ° +25 C See New Product Min ° +25 C VI(PP) = 1V Figure 92 ° VI(PP) = 2.5V 0C ° +70 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω ° ° +25 C V° = V°H, CL = 20pF, ° RL = 10kΩ 0C See Figure 92 +70 C ° B1 Unity Gain Bandwidth +25 C VI = 10mV, CL = 20pF ° 0C See Figure 94 ° +70 C ɸm Phase Margin ° ° +25 C F = B1, VI = 10mV, ° +25 C See Figure 93 TLC271C, TLC271AC, TLC271BC ° CL = 20pF 0C See Figure 94 +70 C 4 3 2.9 Max 2.5 25 3.1 200 220 140 2.2 2.5 1.8 V/µs nV/√Hz kHz 50° 46° 49° Unit MHz High bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew Rate at Unity Gain RL = 10kΩ, CL = 20pF VI(PP) = 1V ° 0C ° +70 C VI(PP) = 5.5V Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth See Figure 93 V° = V°H, CL = 20pF, ° ° 0C ° ° +25 C +25 C ° RL = 10kΩ 0C ° See Figure 92 +70 C ° B1 Unity Gain Bandwidth VI = 10mV, CL = 20pF See Figure 94 F = B1, VI = 10mV, ɸm Phase Margin TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 +70 C F = 1kHz, RS = 20Ω Min ° +25 C See Figure 92 TLC271C, TLC271AC, TLC271BC +25 C ° 0C ° +70 C ° ° +25 C ° CL = 20pF 0C See Figure 94 +70 C 6 of 51 www.diodes.com Typ 5.3 5.9 4.3 Max 5.1 3.8 25 200 220 140 2.2 2.5 1.8 V/µs nV/√Hz kHz 50° 46° 49° 4.6 Unit MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics High bias mode: VDD = 5V Parameter Conditions TA ° New Product +25 C SR Slew rate at unity gain RL = 10kΩ, CL = 20pF VI(PP) = 1V ° -40 C ° +25 C Figure 92 VI(PP) = 2.5V ° Equivalent input noise voltage B°M Maximum output swing bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, RL = ° +25 C See Figure -40 C ° +85 C ° +25 C B1 Unity gain bandwidth VI = 10mV, CL = 20pF See Figure 94 ° -40 C ° +85 C ° ɸm Phase margin F = B1, VI = 10mV, CL = +25 C ° 20pF See Figure -40 C ° 94 3.6 ° +25 C ° 10kΩ 92 Typ ° -40 C +85 C Vn Min ° +85 C See TLC271I, TLC271AI, TLC271BI +85 C 4.5 2.8 2.9 Max 2.3 25 320 3.5 380 250 1.7 2.6 1.2 46° 49° 43° Unit V/µs nV/√Hz kHz MHz High bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew rate at unity gain RL = 10kΩ, CL = 20pF VI(PP) = 1V ° +85 C ° See Figure 92 ° -40 C +25 C VI(PP) = 5.5V ° -40 C ° +85 C Vn B°M Equivalent input noise voltage Maximum output swing bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, 10kΩ 92 RL = +25 C ° +85 C ° Unity gain bandwidth Figure 94 ° -40 C ° +85 C F = B1, VI = 10mV, ɸm Phase margin TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 20pF 94 ° +25 C B1 +25 C See Figure -40 C See Min ° ° VI = 10mV, CL = 20pF TLC271I, TLC271AI, TLC271BI ° CL = +25 C ° See Figure -40 C ° +85 C 7 of 51 www.diodes.com Typ 5.3 6.8 4 4.6 Max 3.5 25 200 5.8 260 130 2.2 3.1 1.7 49° 52° 46° Unit V/µs nV/√Hz kHz MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Medium bias mode TLC271C, TLC271AC, TLC271BC Parameter Conditions TA ° TLC271C New Product VI° Input Offset Voltage TLC271AC +25 C ° V° = 1.4V, VIC = 0 to +70 C ° +25 C 0V, RS = 50Ω, ° RL = 0 to +70 C 100kΩ ° +25 C TLC271BC αVI° ° 0 to +70 C Average temperature coefficient of input offset voltage IIB Input bias current (Note 16) V° = VDD/2, VIC +25 C ° = VDD/2 +70 C ° +25 C Common mode input voltage (Note 17) ° 0 to +70 C ° +25 C VID = 100mV, RL = 100kΩ ° 0C ° +70 C ° +25 C Low level output voltage VID = -100mV, I°L = 0 ° 0C ° +70 C ° AVD Large signal differential voltage gain RL = 100kΩ (Note 18) +25 C ° 0C ° +70 C ° +25 C CMRR Common mode rejection ratio VIC = VICRmin ° 0C ° +70 C 5 6.5 0.25 2 3 0.1 0.6 40 7 ° +25 C ° V° = VDD/2, VIC +25 C ° = VDD/2, No 0C ° +70 C 10 12 0.9 5 6.5 0.26 2 3 2.1 60 0.1 60 7 300 60 0.7 60 600 50 600 300 V -0.2 to 8.5 V 8 8.7 7.8 8.7 7.8 8.7 0 50 0 50 3 3.9 3 4 0 50 0 50 0 50 0 50 25 170 25 275 15 200 15 320 15 140 15 230 65 91 65 94 60 91 60 94 pA pA -0.2 to -0.3 to 9 9.2 3.9 94 -130 105 280 125 320 85 220 60 mV 3.2 Unit µV/°C 92 VI(SEL) = 0 1.1 60 Input current (BIAS SELECT) VDD = 10V Typ. Max -0.2 to 3.5 93 II(SEL) Min 1.7 92 VDD = 5V to 10V, ° 0C V° = 1.4V ° +70 C Notes: 0.9 70 Supply voltage rejection ratio (∆VDD/∆VI°) load 12 60 kSVR Supply current 10 +25 C ° IDD 1.1 -0.2 to -0.3 to 4 4.2 ° V°L ° V° = VDD/2, VIC +25 C ° = VDD/2 +70 C High level output voltage 25 to +70 C Input offset current (Note 16) V°H VDD = 5V Typ Max ° II° VICR Min 60 94 70 93 60 92 60 V mV V/mV dB 94 -160 143 300 173 400 110 280 dB nA µA 16. The typical values of input bias current and input offset current below 5pA were calculated. 17. This range also applies to each input individually. 18. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 8 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Medium bias mode TLC271I, TLC271AI, TLC271BI Parameter Conditions TA ° New Product TLC271I VI° Input Offset Voltage TLC271AI TLC271BI αVI° +25 C ° V° = 1.4V, VIC = -40 to +85 C ° +25 C 0V, RS = ° 50Ω, RL = -40 to +85 C ° 100kΩ +25 C ° -40 to +85 C Average temperature coefficient of input offset voltage IIB Input bias current (Note 19) V° = VDD/2, VIC +25 C ° = VDD/2 +85 C ° ° -40 to +85 C ° +25 C VID = 100mV, RL = 100kΩ ° -40 C ° +85 C ° +25 C V°L Low level output voltage VID = -100mV, I°L = 0 ° -40 C ° +85 C ° AVD Large signal differential voltage gain RL = 100kΩ (Note 21) +25 C ° -40 C ° +85 C ° +25 C CMRR Common mode rejection ratio VIC = VICRmin ° -40 C ° +85 C ° kSVR II(SEL) Supply voltage rejection ratio (∆VDD/∆VI°) +25 C VDD = 5V to 10V, ° -40 C V° = 1.4V ° +85 C Input current (BIAS SELECT) VI(SEL) = 0 ° +25 C ° +25 C IDD Supply current V° = VDD/2, VIC ° = VDD/2, No -40 C load Notes: 5 7 0.25 2 3.5 0.1 0.6 200 24 -0.2 to -0.3 to 4 4.2 ° +25 C Common mode input voltage (Note 20) 0.9 ° +85 C VDD = 10V Min Typ. Max 1.1 10 13 1.7 ° V° = VDD/2, VIC +25 C ° = VDD/2 +85 C High level output voltage ° Input offset current (Note 19) V°H +25 to +85 C II° VICR VDD = 5V Min Typ Max 1.1 10 13 5 7 0.26 2 3.5 2.1 0.1 60 26 1000 60 0.7 60 2000 220 2000 60 pA -0.2 to -0.3 to 9 9.2 V -0.2 to 8.5 V 8 8.7 7.8 8.7 7.8 8.7 0 50 3.2 3.9 3 3.9 3 4 0 50 0 50 0 50 0 50 0 50 25 170 25 275 15 270 15 390 15 130 15 220 65 91 65 94 60 90 60 93 60 90 60 94 70 93 70 93 60 91 60 91 60 94 60 94 pA mV µV/°C 1000 -0.2 to 3.5 0.9 Unit -130 105 280 158 400 80 200 V mV V/mV dB -160 143 300 225 450 103 260 dB nA µA 19. The typical values of input bias current and input offset current below 5pA were calculated. 20. This range also applies to each input individually. 21. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 9 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Medium bias mode: VDD = 5V Parameter Conditions TLC271C, TLC271AC, TLC271BC TA Min ° ° +25 C New Product SR Slew rate at unity gain RL = 100kΩ, CL = 20pF VI(PP) = 1V ° 0C +70 C ° See +25 C Figure 92 VI(PP) = 2.5V ° +70 C Vn Equivalent input noise voltage B°M Maximum output swing bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, 100kΩ Figure 92 Unity gain bandwidth ° +70 C Figure 94 ° ° ° 0C +70 C F = B1, VI = 10mV, ɸm Phase margin 20pF 94 0.4 0.43 0.34 ° CL = +25 C ° See Figure 0 C 60 50 525 600 400 40° ° +70 C Max 41° 39° V/µs 32 55 +25 C B1 0.36 ° See 0.46 ° 25 C RL = +25 C ° 0C See VI = 10mV, CL = 20pF 0.43 ° 0C Typ Unit nV/√Hz kHz MHz Medium bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew Rate at Unity Gain RL = 100kΩ, CL = 20pF VI(PP) = 1V ° +70 C ° See Figure 92 ° 0C +25 C VI(PP) = 5.5V ° 0C ° +70 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, Unity Gain Bandwidth ° +70 C VI = 10mV, CL = 20pF See Figure 94 +25 C ° 0C ° +70 C ° +25 C ɸm Phase Margin F = B1, VI = 10mV, CL = 20pF See Figure 94 ° 0C ° +70 C TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 ° +25 C ° B1 0C See Figure 92 Min ° +25 C ° RL = 100kΩ TLC271C, TLC271AC, TLC271BC 10 of 51 www.diodes.com Typ 0.62 0.67 0.51 0.56 Max 0.46 32 0.61 35 40 30 635 710 510 V/µs nV/√Hz kHz 44° 42° 43° Unit MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Medium bias mode: VDD = 5V Parameter Conditions TA Min ° +25 C New Product SR Slew rate at unity gain RL = 100kΩ, CL = 20pF VI(PP) = 1V ° -40 C ° +85 C ° See +25 C Figure 92 VI(PP) = 2.5V ° -40 C ° +85 C Vn Equivalent input noise voltage B°M Maximum output swing bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, 100kΩ Figure 92 RL = ° ° +25 C +25 C ° See -40 C ° +85 C ° +25 C B1 Unity gain bandwidth VI = 10mV, CL = 20pF See Figure 94 ° -40 C ° +85 C F = B1, VI = 10mV, ɸm Phase margin 20pF 94 TLC271I, TLC271AI, TLC271BI ° CL = +25 C ° See Figure -40 C ° +85 C Typ 0.43 0.51 0.35 0.4 Max 0.32 32 55 0.48 75 45 525 770 370 40° 43° 38° Unit V/µs nV/√Hz kHz MHz Medium bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew Rate at Unity Gain RL = 100kΩ, CL = 20pF VI(PP) = 1V ° +85 C ° See Figure 92 ° -40 C +25 C VI(PP) = 5.5V ° -40 C ° +85 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, Unity Gain Bandwidth ° +85 C VI = 10mV, CL = 20pF See Figure 94 +25 C ° -400 C ° +85 C ° +25 C ɸm Phase Margin F = B1, VI = 10mV, CL = 20pF See Figure 94 ° -40 C ° +85 C TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 ° +25 C ° B1 -40 C See Figure 92 Min ° +25 C ° RL = 100kΩ TLC271I, TLC271AI, TLC271BI 11 of 51 www.diodes.com Typ 0.62 0.77 0.47 0.56 Max 0.44 32 0.7 35 45 25 635 880 480 V/µs nV/√Hz kHz 46° 41° 43° Unit MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Low bias mode TLC271C, TLC271AC, TLC271BC Parameter Conditions TA Min ° TLC271C New Product VI° Input Offset Voltage TLC271AC TLC271BC αVI° +25 C ° V° = 1.4V, VIC = 0 to +70 C ° +25 C 0V, RS = ° 50Ω, RL = 0 to +70 C ° 1MΩ +25 C ° 0 to +70 C Average Temperature Coefficient of Input Offset Voltage ° +25 to +70 C Input Offset Current (Note 22) V° = VDD/2, VIC +25 C ° = VDD/2 +70 C IIB Input Bias Current (Note 22) V° = VDD/2, VIC +25 C ° = VDD/2 +70 C ° +25 C ° 0 to +70 C ° +25 C V°H High Level Output Voltage VID = 100mV, RL = 1MΩ ° 0C ° +70 C V°L Low Level Output Voltage AVD RL = 1MΩ (Note 24) 60 7 300 0.6 40 2 3 1 0.1 0.26 0.1 60 8 300 60 0.7 60 600 50 600 V -0.2 to 8.5 V 8 8.9 7.8 8.9 7.8 8.9 0 50 -0.2 to 3.5 3.2 4.1 3 4.1 3 4.2 0 50 50 50 50 520 50 870 50 700 50 1030 50 380 50 660 65 94 65 97 60 95 60 97 60 95 60 97 70 97 70 97 60 97 60 97 60 98 60 98 65 95 10 17 14 23 12 21 18 33 8 14 11 20 ° ° 0C ° kSVR II(SEL) Input Current (BIAS SELECT) VI(SEL) = 0 ° +25 C ° +25 C ° +70 C pA 0 +70 C pA -0.2 to -0.3 to 9 9.2 0 0C mV ° Unit µV/°C 50 +25 C VDD = 5V to 10V, ° 0C V° = 1.4V ° +70 C Notes: 6.5 50 Supply Voltage Rejection Ratio (∆VDD/∆VI°) load 3 5 0 +25 C V° = VDD/2, VIC ° = VDD/2, No 0C 2 12 0 ° Supply Current 0.24 0.9 +70 C +70 C IDD 6.5 ° 0C ° VIC = VICRmin 5 10 +25 C CMRR Common Mode Rejection Ratio 12 1.1 ° ° Large Signal Differential Voltage Gain 0.9 VDD = 10V Typ. Max ° +25 C VID = -100mV, I°L = 0 10 -0.2 to -0.3 to 4 4.2 ° VICR 1.1 Min 1.1 ° II° Common Mode Input Voltage (Note 23) VDD = 5V Typ Max V mV V/mV dB dB nA µA 22. The typical values of input bias current and input offset current below 5pA were calculated. 23. This range also applies to each input individually. 24. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 12 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Low bias mode TLC271I, TLC271AI, TLC271BI Parameter Conditions TA ° New Product TLC271I VI° Input Offset Voltage TLC271AI TLC271BI αVI° +25 C ° V° = 1.4V, VIC = -40 to +85 C ° +25 C 0V, RS = ° 50Ω, RL = -40 to +85 C ° 1MΩ +25 C ° -40 to +85 C Average Temperature Coefficient of Input Offset Voltage IIB Input Bias Current (Note 25) V° = VDD/2, VIC +25 C ° = VDD/2 +85 C ° (Note 26) ° -40 to +85 C ° +25 C VID = 100mV, RL = 1MΩ ° -40 C ° +85 C ° +25 C V°L Low Level Output Voltage VID = -100mV, I°L = 0 ° -40 C ° +85 C ° AVD Large Signal Differential Voltage Gain RL = 1MΩ (Note 27) +25 C ° -40 C ° +85 C ° +25 C CMRR Common Mode Rejection Ratio VIC = VICRmin ° -40 C ° +85 C ° kSVR II(SEL) Supply Voltage Rejection Ratio (∆VDD/∆VI°) +25 C VDD = 5V to 10V, ° -40 C V° = 1.4V ° +85 C Input Current (BIAS SELECT) VI(SEL) = 0 ° +25 C ° +25 C IDD Supply Current V° = VDD/2, VIC ° = VDD/2, No -40 C load Notes: 5 7 0.24 2 3.5 ° 60 24 1000 0.6 200 Document number: DS35395 Rev. 2 - 2 13 of 51 www.diodes.com 7 0.26 2 3.5 0.1 60 26 1000 60 0.7 60 220 2000 pA pA -0.2 to -0.3 to 9 9.2 V -0.2 to 8.5 V 8 8.9 7.8 8.9 7.8 8.9 0 50 3 4.1 3 4.1 3 4.2 0 50 0 50 0 50 0 50 0 50 50 520 50 870 50 900 50 1550 50 330 50 585 65 94 65 97 60 95 60 97 60 95 60 98 70 97 70 97 60 97 60 97 60 98 60 98 65 95 10 17 14 23 16 27 25 43 10 18 mV Unit µV/°C 2000 +85 C 17 13 25. The typical values of input bias current and input offset current below 5pA were calculated. 26. This range also applies to each input individually. 27. At VDD = 5 V, V° = 0.25 V to 2 V; at VDD = 10 V, V° = 1 V to 6 V. TLC271, TLC271A, TLC271B 5 -0.2 to 3.5 0.9 1 0.1 -0.2 to -0.3 to 4 4.2 ° +25 C Common Mode Input Voltage 0.9 VDD = 10V Min Typ. Max 1.1 10 13 1.1 ° V° = VDD/2, VIC +25 C ° = VDD/2 +85 C High Level Output Voltage ° Input Offset Current (Note 25) V°H +25 to +85 C II° VICR VDD = 5V Min Typ Max 1.1 10 13 V mV V/mV dB dB nA µA November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Low bias mode: VDD = 5V Parameter Conditions TA Min ° +25 C New Product SR Slew Rate at Unity Gain RL = 1MΩ, CL = 20pF VI(PP) = 1V ° 0C ° +70 C ° See +25 C Figure 92 VI(PP) = 2.5V ° 0C ° +70 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, RL = 1MΩ See Figure 92 ° ° ° +25 C +25 C ° 0C +70 C ° B1 Unity Gain Bandwidth VI = 10mV, CL = 20pF See Figure 94 +25 C ° 0C ° +70 C ° ° +25 C ɸm Phase Margin F = B1, VI = 10mV, CL = 20pF See Figure 94 TLC271C, TLC271AC, TLC271BC ° 0C +70 C Typ 0.03 0.04 0.03 0.03 Max 0.02 68 0.03 5 6 4.5 85 100 65 V/µs nV/√Hz kHz 36° 30° 34° Unit MHz Low bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew Rate at Unity Gain RL = 1MΩ, CL = 20pF VI(PP) = 1V ° +70 C See Figure 92 ° 0C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth See Figure 93 V° = V°H, CL = 20pF, RL = 1MΩ See Figure 92 ° ° 0C Unity Gain Bandwidth Phase Margin See Figure 94 Document number: DS35395 Rev. 2 - 2 68 110 ° 0C +70 C ° ° ° 0C +70 C TLC271, TLC271A, TLC271B 0.04 14 of 51 www.diodes.com 1 0.9 125 90 V/µs nV/√Hz kHz 40° 34° 38° Unit 0.05 +25 C Max 0.04 1.3 0C +25 C ɸm 0.04 ° ° F = B1, VI = 10mV, CL = 20pF 0.05 ° +25 C +70 C See Figure 94 0.05 ° VI = 10mV, CL = 20pF Typ ° +25 C ° B1 +70 C F = 1kHz, RS = 20Ω Min ° +25 C VI(PP) = 5.5V TLC271C, TLC271AC, TLC271BC MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Electrical Characteristics Low bias mode: VDD = 5V Parameter Conditions TA Min ° New Product +25 C SR Slew Rate at Unity Gain RL = 1MΩ, CL = 20pF VI(PP) = 1V ° -40 C ° +85 C ° See +25 C Figure 92 VI(PP) = 2.5V ° -40 C ° +85 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, RL = 1MΩ See Figure 92 ° ° +25 C +25 C ° -40 C ° +85 C ° B1 Unity Gain Bandwidth VI = 10mV, CL = 20pF See Figure 94 +25 C ° -40 C ° +85 C ° ɸm Phase Margin F = B1, VI = 10mV, CL = 20pF See Figure 94 TLC271I, TLC271AI, TLC271BI +25 C ° -40 C ° +85 C Typ 0.03 0.04 0.03 0.03 Max 0.02 68 0.04 5 7 4 85 130 55 V/µs nV/√Hz kHz 38° 28° 34° Unit MHz Low bias mode: VDD = 10V Parameter Conditions TA ° +25 C SR Slew Rate at Unity Gain RL = 1MΩ, CL = 20pF VI(PP) = 1V ° +85 C ° See Figure 92 ° -40 C +25 C VI(PP) = 5.5V ° -40 C ° +85 C Vn Equivalent Input Noise Voltage B°M Maximum Output Swing Bandwidth F = 1kHz, RS = 20Ω See Figure 93 V° = V°H, CL = 20pF, RL = 1MΩ See Figure 92 Unity Gain Bandwidth Phase Margin -40 C +25 C ° -400 C ° +85 C TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 F = B1, VI = 10mV, CL = 20pF See Figure 94 ° ° ɸm ° +25 C +85 C See Figure 94 ° VI = 10mV, CL = 20pF Min ° +25 C ° B1 TLC271I, TLC271AI, TLC271BI +25 C ° -40 C ° +85 C 15 of 51 www.diodes.com Typ 0.05 0.06 0.03 Max 0.05 0.03 68 1 1.4 0.8 110 155 80 38° 42° 32° 0.04 Unit V/µs nV/√Hz kHz MHz November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Performance Characteristics Table Index of Graphs Figure VI° New Product V°H High Bias Mode Medium Bias Mode Low Bias Mode Distribution 1,2 31,32 61,62 vs. High Level Output Current 3,4 33,34 63,64 vs. Supply Voltage 5 35 65 vs. Free Air Temperature 6 36 66 7,8 37,38 67,68 vs. Differential Input Voltage 9 39 69 vs. Free Air Temperature 10 40 70 11,12 41,42 71,72 vs. Supply Voltage 13 43 73 vs. Free Air Temperature 14 44 74 vs. Free Air Temperature 15 45 75 vs. Free Air Temperature 15 45 75 vs. Supply Voltage 16 46 76 vs. Supply Voltage 17 47 77 vs. Free Air Temperature 18 48 78 vs. Supply Voltage 19 49 79 vs. Free Air Temperature 20 50 80 Bias Select Current vs. Supply Voltage 21 51 81 Maximum Peak to Peak Output Voltage vs. Frequency 22 52 82 vs. Free Air Temperature 23 53 83 vs. Supply Voltage 24 54 84 29,30 59,60 89,90 vs. Supply Voltage 25 55 85 vs. Free Air Temperature 26 56 86 vs. Capacitive Load 27 57 87 Equivalent Input Noise Voltage vs. Frequency 28 58 88 Phase Shift vs. Frequency 29,30 59,60 89,90 Input Offset Voltage High Level Output Voltage vs. Common Mode Input Voltage V°L Low Level Output Voltage vs. Low Level Output Current AVD IIB II° Large Signal Differential Voltage Gain Input Bias Current Input Offset Current VIC Common Mode Input Voltage IDD Supply Current SR Isel V°(°PP) B1 AVD ɸm Vn ɸshift Slew Rate Unity Gain Bandwidth Large Signal Differential Voltage Gain Phase Margin TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 vs. Frequency 16 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 1 Figure 2 Figure 3 Figure 4 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 17 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 5 Figure 6 Figure 7 Figure 8 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 18 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 9 Figure 10 Figure 11 Figure 12 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 19 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 13 Figure 14 Figure 15 Figure 16 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 20 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 17 Figure 18 Figure 19 Figure 20 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 21 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 21 Figure 22 Figure 23 Figure 24 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 22 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 25 Figure 26 Figure 27 Figure 28 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 23 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics High Bias Mode Figure 29 Figure 30 Typical Performance Characteristics Medium Bias Mode Figure 31 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 Figure 32 24 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 33 Figure 34 Figure 35 Figure 36 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 25 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 37 Figure 38 Figure 39 Figure 40 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 26 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 41 Figure 42 Figure 43 Figure 44 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 27 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 45 Figure 46 Figure 47 Figure 48 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 28 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 49 Figure 50 Figure 51 Figure 52 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 29 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 53 Figure 54 Figure 55 Figure 56 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 30 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Medium Bias Mode Figure 57 Figure 58 Figure 59 Figure 60 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 31 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 61 Figure 62 Figure 63 Figure 64 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 32 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 65 Figure 66 Figure 67 Figure 68 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 33 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 69 Figure 70 Figure 71 Figure 72 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 34 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 73 Figure 74 Figure 75 Figure 76 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 35 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 77 Figure 78 Figure 79 Figure 80 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 36 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 81 Figure 82 Figure 83 Figure 84 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 37 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 85 Figure 86 Figure 87 Figure 88 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 38 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B New Product Typical Performance Characteristics Low Bias Mode Figure 89 TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 Figure 90 39 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Application Information Bias select feature The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending on the level of performance desired. The trade-off between bias levels relates to ac performance and power dissipation as below. New Product Typical values TA = +25°C, VDD = 5V Mode High bias RL =10kΩ Medium bias RL =100kΩ Low bias RL =1MΩ Units PD Power Dissipation 3.4 0.5 0.05 mW SR Slew Rate 3.6 0.4 0.03 V/µs Vn Equivalent Input Noise Voltage at f=1kHz 20 25 28 nV√Hz B1 Unity Gain Bandwidth 1.7 0.5 0.09 MHz ɸm Phase Margin 46° 40° 34° AVD Large Signal Differential Voltage Amplification 23 170 480 V/mV Bias selection Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see below). For medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply applications, the medium-bias mode necessitates using a voltage divider as indicated below. The use of large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However, large-value resistors used in conjunction with a large-value capacitor require significant time to charge the supply to the midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within the voltages specified table. VDD To the Bias Select Pin Low Medium 1 MΩ Bias Mode Low Medium High High 1 MΩ 0.01 µF Bias Select Voltage (Single Supply) VDD 1 V to VDD -1 V GND Figure 91 High-Bias Mode In high-bias mode, the TLC271 series features low offset voltage drift, high input impedance and low noise. Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain bandwidth is typically greater than 1 MHz. Medium-Bias Mode The TLC271 in medium-bias mode features low offset voltage drift, high input impedance and low noise. Speed in this mode is similar to general-purpose bipolar devices, but power dissipation is only a fraction of that consumed by bipolar devices. Low-Bias Mode In low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power consumption and high differential voltage gain. TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 2 - 2 40 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Application Information (cont.) Parameter measurement circuits Because the TLC271 is optimized for single-supply operation, circuit configurations used for the various tests can present some difficulties since the input signal must be offset from ground. This issue can be avoided by testing the device with split supplies and the output load tied to the negative rail. Example circuits are shown below. New Product VDD VDD+ - + VO VI + CL VO VI RL + CL RL VDD(a) Single Supply (b) Split Supply Figure 92 Measurement circuit with either single or split supply 2 kΩ 20 Ω + 2 kΩ VDD VDD+ - - ½ VDD VO 20 Ω + CL VO + RL 20 Ω CL RL 20 Ω VDD- (a) Single Supply (b) Split Supply Fig 93 Noise measurement with single or split supply 10 kΩ VI 100 Ω 10 kΩ VDD - VI 100 Ω VDD+ - VO + ½ VDD + VO + CL CL VDD(a) Single Supply (b) Split Supply Figure 94 Gain of 100 with single or split supply TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 41 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Application Notes Offset Voltage Nulling Circuit The TLC271 offers external input offset null control. Nulling of the input off set voltage may be achieved by adjusting a 100-kΩ potentiometer connected between the offset null terminals with the wiper connected as shown in Figure 95. The amount of nulling range varies with the bias selection. In the high-bias mode, the nulling range allows the maximum offset voltage specified to be trimmed to zero. In low-bias and mediumbias modes, total nulling may not be possible. New Product VDD IN- - IN+ + VDD+ TLC271 VDD N1 IN- - IN+ + TLC271 N2 N1 VDD- N2 VDD /2 (a) Single Supply (b) Split Supply Figure 95 Offset Nulling Circuits Input Bias Current – Error Protection The TLC271 has an extremely high input impedance. To use the inputs as a high impedance node, for example, greater than 100K, or to accurately measure bias current, it will be necessary to place a guard ring around the input pins and drive this ring to a potential equivalent to the common mode input voltage. In many cases this common mode potential may exist as a part of the feedback circuit and can be obtained from one of the appropriate nodes. In the case for the SO8 package, pin 4 is connected to ground or Vdd-. Input pins 2 and 3 are normally well above the voltage on pin 4 so a large potential voltage on the order of several volts is likely between pins 3 and 4. To prevent interference with a 1 pA bias current the board resistance would need to be in the order of gigaohms to have a minimum impact. The goal is to have the common mode potential on the guard ring, therefore reducing the stray voltage near the input pins to millivolts in normal applications. Any solder flux residue, excess moisture, humidity or board contamination will be detrimental to using the device in a high impedance input mode. 8 5 V= V IC 1 4 Figure 96 Bias Current Guarding for High Input Impedance Applications TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 42 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits VDD R4 R1 R2 VI VO + + Vref R3 New Product R3 R1+ R3 R4 + Vref VO = ( Vref - VI) R2 Vref = VDD C 0.01 µF Figure 97 Inverting Amplifier With Voltage Reference 10 kΩ 10 kΩ 0.016 µF 0.016 µF VI 10 kΩ + 5V - 10 kΩ 5V TLC271 - + TLC271 Bias Select + 10 kΩ 5V Low Pass TLC271 Bias Select + Bias Select High Pass 5 kΩ R = 5 kΩ(3/d-1) where d=damping factor I/O Band Pass Figure 98 State Variable Filter 9V VO VO(pp) =8V 10 kΩ C=0.01 µF 9V - + 100 kΩ TLC271 + 10 kΩ Bias Select R2 9V VO TLC271 + VO(pp) =4V Bias Select FO = [ ] 1 R1 4C(R2) R2 R1, 100 kΩ 5 kΩ R3, 47 kΩ Figure 99 Single Supply Function Generator TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 43 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) 5V VI - 10 kΩ - 100 kΩ TLC271 New Product + Bias -5V Select 5V TLC271 + 5V - 10 kΩ Bias -5V Select 10 kΩ 95 kΩ TLC271 VI + + Bias -5V Select R1=10 kΩ Non-inductive Figure 100 Low Power Instrumentation Amplifier 5V R 10 MΩ R 10 MΩ + VI VO TLC271 Bias Select 2C 540 pF f notch = 1 2 π RC R/2 5 MΩ C 270 pF C 270 pF Figure 101 Single Supply Twin-T Notch Filter TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 44 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) VI =3.5 to 15 V 100 kΩ 1.2 kΩ 4.7 kΩ TL431 - 20 kΩ 0.47 µF 1 kΩ New Product TLC271 0.1 µF + 15 Ω Bias Select 250 µF 25 V + - VO =2 V I O =0 to 2 A 10 kΩ 47 kΩ 110 Ω 22 kΩ 0.01 µF Figure 102 Power Supply 12V VI H.P. 5082-2835 - 12V - TLC271 + VO TLC271 Bias Select 0.5 µF Mylar N.O. Reset + Bias Select 100 kΩ Figure 103 Positive Peak Detector TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 45 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) 1N4148 470 kΩ 100 kΩ New Product 5V 47 kΩ 100 kΩ VO TLC271 + Bias fO = 2.5V Select 1 µF R1 68 kΩ C1 2.2 nF 2 π R1R2C1C2 VO(PP) = 2 V R2 68 kΩ 100 kΩ 1 C2 2.2 nF Figure 104 Wein Oscillator 5V 0.1 µF VI 1 MΩ 0.22 µF - VO TLC271 + 2.5V Bias Select 100 kΩ 1 MΩ 100 kΩ 10 kΩ 0.1 µF Figure 105 Single-Supply AC Amplifier TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 46 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) 5V Low to medium impedance dynamic mike Gain Control 1 MΩ 100 kΩ 0.1 µF - + New Product - TLC271 + 0.1 µF 1 µF + - - 10 kΩ + 1 kΩ 2.5V 100 kΩ Bias Select VO 100 kΩ Figure 106 Microphone Preamplifier 10 MΩ VDD VDD - TLC271 + 15 nF VO TLC271 VDD/2 Bias Select Conditions: VDD =4 V to 15 V Vref =0 V to VDD -2V Vref 100 pF + VDD/2 Bias Select 100 kΩ Figure 107 Photo-Diode Amplifier With Ambient Light Rejection IS 5V VI 2N3821 TLC271 Conditions: V I = 0 V to 3 V VI IS = R + 2.5 V Bias Select R Figure 108 Precision Low-Current Sink TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 47 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) VDD VI Bias Select + VO TLC271 New Product Select S1 S2 AV 10 100 VDD 90 kΩ S1 VDD =5 V to 12 V S2 C X1 A 1 C X2 A 2 4066 B 9 kΩ Analog Switch B 1 kΩ Figure 109 Amplifier With Digital Gain Selection 5V + TLC271 500 kΩ Bias Select VO1 - 5V 500 kΩ Bias Select + VO2 TLC271 0.01 µF 500 kΩ 500 kΩ Figure 110 Multivibrator TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 48 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Typical Application Circuits (cont.) + 10 kΩ VDD VI 20 kΩ Bias Select + VO New Product TLC271 100 kΩ Figure 111 Full Wave Rectifier 0.016 µF VDD VI 10 kΩ 10 kΩ + Bias Select TLC271 0.016 µF VO - Nomalized to FC = 1 kHz and R L = 10 kΩ Figure 112 Two-Pole Low-Pass Butterworth Filter TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 49 of 51 www.diodes.com November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B Marking Information Part mark C271C C271AC C271BC C271I C271AI C271BI Part number TLC271CS TLC271ACS TLC271BCS TLC271IS TLC271AIS TLC271BIS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 New Product SO-8 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° A2 A A3 Detail ‘A’ b e D TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 50 of 51 www.diodes.com SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm November 2014 © Diodes Incorporated TLC271, TLC271A, TLC271B IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systemsrelated information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com TLC271, TLC271A, TLC271B Document number: DS35395 Rev. 1 - 0 51 of 51 www.diodes.com November 2014 © Diodes Incorporated