MOSFETs - Diodes Incorporated

DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 1
MOSFETs
diodes.com
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 2
THE LEADING EDGE...
MOSFETS
COMPANY OVERVIEW
DIODES INCORPORATED’S
PRODUCTS ARE DESIGNED
FOR HIGH PERFORMANCE
ACROSS A WIDE RANGE
OF EXISTING
AND EMERGING
APPLICATIONS
Diodes Incorporated
is a leading global
provider of Discrete,
Analog, and Logic
semiconductors.
Its global footprint includes
sales offices in 5 countries and
manufacturing locations in
China, Europe and the USA.
A focus on product innovation,
cost reduction, acquisitions and
customer service has made Diodes
Incorporated an industry leader.
Combining leading silicon and
packaging technologies, Diodes
provides a broad portfolio of
discrete semiconductors
comprising Bipolar Transistors,
MOSFETs, Schottky diodes, SBR®,
switching diodes and functional
specific arrays to enable our
customers’ next generation
designs.
The Diodes’ Analog IC portfolio
consists of 6 main areas: Power
Management, Standard Linear,
Lighting, Sensors, Direct Broadcast
by Satellite, and Applications
Specific Standard Products.
Diodes’ IC portfolio also includes
Standard Logic products.
SBR and PowerDI are registered
trademarks of Diodes Incorporated.
Page 2
A FOCUS ON PRODUCT
INNOVATION DRIVEN BY
CUSTOMER REQUIREMENTS
HAS RESULTED IN
LEADING-EDGE MOSFETS…
Encompassing N- and P-channels,
the portfolio ranges from 8V to 650V
packaged in single, dual,
complementary and H-Bridge
(Quad) configurations. These are
offered in a wide range of package
options from the tiny DFN0606 to
the thermally-efficient PowerDI®5060
(Power SO-8) and through-hole
TO220 packages. With innovations in
chip-scale packaging to enable the
lowest RDS(ON) for a given footprint.
Embracing both industry-standard
and differentiated products, the
broad portfolio has expanded to over
800 products from small-signal to
power MOSFETs. Diodes Incorporated
utilizes emerging technologies that
are uniquely suited for specific
applications, such as using shieldgate technology to reduce
conduction and switching losses,
which is ideal for BLDC motor driving.
Diodes' lateral MOSFETs (LD-MOS)
feature industry-leading Figure of
Merit (FOM), which enables greater
efficiency in DC-DC buck converters.
The breadth of the Diodes’ MOSFET
portfolio enables designers to select a
device that is optimized for their end
application, ranging from consumer
to industrial to automotive segments.
The Diodes portfolio is well
suited for meeting the circuit
requirements in:
DC-DC Conversion
Motor Control
LED Lighting
Battery Protection
Load Switching
Power Supplies
Battery Chargers
Audio Circuits
Power-Over-Ethernet
The majority of products in the
Diodes MOSFET product portfolio
are designed to meet the stringent
requirements of AEC-Q101
reliability standard of the
Automotive Electronic Council.
Products with a ‘Q’ suffix indicate
that the product is Automotive
grade – the device has passed the
rigorous AEC-Q101 standard and is
fully supported for Automotive
customers with PPAP (Production
Part Approval Process), and
TS16949 approved manufacturing
sites. Furthermore, all in-house
packaging utilizes environmentally
‘green‘ mold compound.
Diodes Incorporated’s MOSFET
product development strategy is
focused on high growth market
segments such as Automotive, LED
Lighting, Ethernet, Smartphones,
and the Internet of Things.
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 3
MOSFETs
INDEX
8V – 29V N-CHANNEL
4-6
8V – 29V P-CHANNEL
6-8
8V – 29V COMPLEMENTARY
9
DUAL, COMMON-SOURCE / DRAIN
10
30V N-CHANNEL
11-13
30V P-CHANNEL
13-14
30V COMPLEMENTARY
15
31V – 50V N-CHANNEL
16
31V – 50V P-CHANNEL
17
31V – 100V COMPLEMENTARY
18
51V – 99V N-CHANNEL
19-20
51V – 99V P-CHANNEL
21
100V PLUS N-CHANNEL
22-23
100V PLUS P-CHANNEL
23
PROTECTED MOSFETS
24
H-BRIDGE
25
HIGH TEMPERATURE AUTO FETS
26
MOSFET PACKAGE EVOLUTION
27
Page 3
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 4
8V – 29V N-CHANNEL
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
Min. Max.
VGS (th) (V)
Package
DMN1019UFDE
Single
Yes
a
12
a
8
a
11
a
0.69
a
10
a
12
a
14
a
0.35
0.8
2480
27.3
a
a
U-DFN2020-6
Type E
DMN1019USN
Single
Yes
12
8
9.3
0.68
10
12
14
0.35
0.8
2480
27.3
SC59
DMN1025UFDB
Dual
Yes
12
10
6.9
1.7
25
30
38
0.4
1
917
12.6
U-DFN2020-6 Type B
DMN1032UCB4
Single
No
12
8
4.8
1.16
26
29
38
0.4
1.2
325
3.2
U-WLB1010-4
DMN1029UFDB
Dual
No
12
8
5.6
1.4
29
34
44
0.4
1
914
10.5
U-DFN2020-6 Type B
DMN1045UFR4
Single
Yes
12
8
3.2
0.5
45
64
85
0.4
1
390
4.8
X2-DFN1010-3
DMN1150UFB
Single
Yes
12
6
1.4
0.5
150
185
210
0.35
1
110
1.5
X1-DFN1006-3
DMN1260UFA
Single
Yes
12
8
0.5
0.36
366
520
950
0.4
1
65
0.96
X2-DFN0806-3
DMN2005UFG
Single
No
20
12
18.1
1.05
4.6
8.7
-
0.4
1.2
6495
68.8
POWERDI3333-8
DMN2009LSS
Single
No
20
12
12
2
9
12
-
0.5
1.2
2555
28.9
SO-8
DMN2011UFDE
Single
Yes
20
12
11.7
1.97
9.5
11
20
0.4
1
2248
24
U-DFN2020-6 Type E
DMN2013UFDE
Single
Yes
20
8
10.5
0.66
11
13
-
0.5
1.1
2453
14.3
U-DFN2020-6 Type E
DMN2015UFDE
Single
Yes
20
12
10.5
2.03
11.6
15
30
0.5
1.1
1779
19.7
U-DFN2020-6 Type E
DMN2027USS
Single
No
20
12
10.5
1.5
12.5
19
-
0.7
1.3
1000
11.6
SO-8
DMN2020UFCL
Single
Yes
20
10
9
0.61
14
20
26
0.4
0.9
1788
21.5
X1-DFN1616-6 Type E
a
a
a
a
a
DMG6898LSD
Dual
Yes
20
12
9.5
1.28
16
23
-
0.5
1.5
1149
11.6
SO-8
DMN2020LSN
Single
Yes
20
12
6.9
0.61
20
28
-
0.5
1.5
1149
11.6
SC59
DMN2028USS
Single
Yes
20
12
9.8
2.8
20
28
-
0.6
1.3
1000
11.6
SO-8
DMN2022UFDF
Single
Yes
20
8
7.9
0.66
22
26
36
0.5
1
907
9.8
U-DFN2020-6
DMG9926USD
Dual
No
20
8
8
1.3
24
29
37
0.5
0.9
880
8.8
SO-8
DMG3414U
Single
No
20
8
4.2
0.78
25
29
37
0.5
0.9
830
9.6
SOT23
DMG6968U
Single
Yes
20
12
6.5
1.3
25
29
36
0.5
0.9
151
8.5
SOT23
Dual
No
20
8
5.8
1.4
25
35
-
0.6
1.5
1171
10.4
SO-8
Single
No
20
12
6.4
0.78
28
41
-
0.5
1.2
550
7.2
SOT23
DMN2029USD
DMN2041L
DMN2041LSD
Dual
No
20
12
7.6
1.16
28
41
-
0.5
1.2
550
7.2
SO-8
DMN2050L
Single
No
20
12
5.9
1.4
29
50
-
0.45
1.4
532
6.7
SOT23
DMG3420U
Single
No
20
12
5.5
0.74
35
48
91
0.5
1.2
435
5.4
SOT23
DMN2075U
Single
No
20
8
4.2
0.8
38
45
-
0.4
1
594
7
SOT23
Dual
Yes
20
12
4.7
1.4
40
65
-
0.35
1.4
713
8
U-DFN2020-6 Type B
ZXM64N02X
Single
No
20
12
5.4
1.1
40
50
-
0.7
-
1150
12.5
MSOP-8
ZXMN2B03E6
Single
No
20
8
4.3
1.1
40
55
75
0.4
1
1160
14.5
SOT26
Dual
No
20
12
4.5
1.42
45
55
-
0.4
1
389
5.7
U-DFN2020-6 Type B
ZXMN2F30FH
Single
No
20
12
4.1
0.96
45
65
-
0.6
1.5
452
4.8
SOT23
DMN2075UDW
Single
No
20
8
2.8
0.58
48
59
70
0.4
1
594
7
SOT363
DMN2100UDM
Single
Yes
20
8
4
1.5
55
70
90
0.6
1
555
8.8
SOT26
ZXMN2A03E6
Single
No
20
12
4.6
1.7
55
100
-
0.7
-
837
8.2
SOT26
ZXMN2B14FH
Single
No
20
8
3.5
1
55
75
100
0.4
1
872
11
SOT23
DMN2065UW
Single
No
20
12
2.8
0.7
56
65
93
0.35
1
400
5.4
SOT323
ZXMN2A14F
Single
No
20
12
3.4
1
60
110
-
0.7
-
544
6.6
SOT23
ZXMN2F34FH
Single
No
20
12
3.4
0.95
60
120
-
0.5
1.5
277
2.8
SOT23
DMN2046U
Single
Yes
20
12
3.4
1.26
72
110
-
0.4
1.4
292
3.8
SOT23
DMG2302U
Single
No
20
8
4.2
0.8
90
120
-
0.4
1
594
7
SOT23
DMN2112SN
Single
Yes
20
8
1.2
0.5
100
140
250
0.5
1.2
220
-
SC59
DMN2114SN
Single
Yes
20
12
1.2
0.5
100
160
-
0.7
1.4
180
-
SC59
DMN2215UDM
Dual
Yes
20
12
2
0.65
100
140
215
0.6
1
188
2.3
SOT26
ZXM62N02E6
Single
No
20
12
3.2
1.1
100
125
-
0.7
-
470
5
SOT26
ZXMN2B01F
Single
No
20
8
2.1
0.625
100
150
200
0.4
1
370
4.8
SOT23
DMN2230U
Single
No
20
12
2
0.6
110
145
230
0.5
1
188
2.3
SOT23
ZXMN2A01E6
Single
No
20
12
2.5
1.1
120
225
-
0.7
-
310
3.1
SOT26
ZXMN2A01F
Single
No
20
12
1.9
0.625
120
225
-
0.7
-
310
3.1
SOT23
ZXMN2AMC
Dual
No
20
12
2.9
1.5
120
300
-
0.7
-
310
3.1
W-DFN3020-8 Type B
DMN2041UFDB
DMN2050LFDB
Page 4
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 5
8V – 29V N-CHANNEL (CONTINUED)
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
Min. Max.
VGS (th) (V)
Package
ZXMD63N02X
Dual
No
a
20
a
12
a
2.5
a
1.25
a
130
a
150
a
a
0.7
a
3
360
4.5
a
a
MSOP-8
DMN2250UFB
Single
Yes
20
8
1.4
0.5
170
230
250
0.35
1
100
1.4
X1-DFN1006-3
DMN2300U
Single
Yes
20
8
1.4
0.55
175
240
360
0.45
0.95
70
1.6
SOT23
DMN2300UFB
Single
Yes
20
8
1.3
0.47
175
240
360
0.45
0.95
70
1.6
X1-DFN1006-3
DMN2300UFB4
Single
Yes
20
8
1.3
0.5
175
240
360
0.45
0.95
70
1.6
X2-DFN1006-3
ZXM61N02F
Single
No
20
12
1.7
0.625
180
240
-
0.7
-
170
2.7
SOT23
DMN2300UFL4
Dual
Yes
20
8
2.1
1.39
195
260
380
0.45
0.95
70
1.6
X2-DFN1310-6
DMN2300UFD
Single
Yes
20
8
1.7
0.96
200
260
400
0.45
0.95
70
1.6
X1-DFN1212-3
ZXMN2088DE6
Dual
No
20
8
1.7
0.9
200
240
310
0.4
1
279
3.8
SOT26
DMG1012T
Single
Yes
20
6
0.63
0.28
400
500
700
0.5
1
61
0.74
SOT523
DMN2500UFB4
Single
Yes
20
6
0.81
0.46
400
500
700
0.5
1
62
0.74
X2-DFN1006-3
DMN2501UFB4
Single
Yes
20
8
1
0.5
400
500
700
0.5
1
88
1.1
X2-DFN1006-3
DMG1012UW
Single
Yes
20
6
1
0.29
450
600
750
0.5
1
61
0.74
SOT323
DMG1024UV
Dual
Yes
20
6
1.4
0.53
450
600
750
0.5
1
61
0.74
SOT563
a
a
a
a
DMN2550UFA
Single
Yes
20
8
0.6
0.36
450
550
750
0.4
1
54
0.88
X2-DFN0806-3
DMN2400UV
Dual
Yes
20
12
1.33
0.53
500
700
900
0.5
0.9
38
0.5
SOT563
DMN2004DMK
Dual
Yes
20
8
0.54
0.225
550
700
900
0.5
1
87
-
SOT26
DMN2004DWK
Dual
Yes
20
8
0.54
0.2
550
700
900
0.5
1
87
-
SOT363
DMN2004K
Single
Yes
20
8
0.63
0.35
550
700
900
0.5
1
87
0.9
SOT23
DMN2004TK
Single
Yes
20
8
0.54
0.15
550
700
900
0.5
1
87
-
SOT523
PROBABLY THE SMALLEST,
MOST POWERFUL MOSFET
IN THE WORLD….
Did you know? DFN0606 miniature MOSFETs feature a
footprint measuring only 0.6mm x 0.6mm. Each device
takes 40% less board space than the commonly used
DFN1006 (aka SOT883) packaged MOSFETs, making it an
ideal choice in next-generation wearable technology,
tablets, smartphones, watches, headsets and the Internet
of Things (IoT).
Able to deliver an equivalent or better electrical
performance than many of the larger package parts, the
DMN2990UFZ (20V N-channel), the DMN31D5UFZ (30V
N-channel) and DMP32D9UFZ (30V P-channel) have been
designed to minimize on-state resistance while still
maintaining a superior switching performance. What’s
more, a typical threshold voltage of less than a volt means a
lower turn-on, suiting single-cell operation, and enabling
low-voltage circuits to fully enhance the MOSFET channel.
These tiny MOSFETs are as a result a good choice in high
efficiency power management duties and as general
purpose interfacing and simple analog switches. Circuit
power density gets a boost too, with the DFN0606 parts
achieving a power dissipation of 300mW. Further to this,
they maintain the low profile of 0.4mm that is associated
with DFN1006; making both the DFN0606 and DFN0806
packages ideal for thin profile applications.
THE DIODES ADVANTAGE
N-channel and P-channel in the tiny DFN0606, DFN0806 & DFN1006
DFN0606 = 0.36mm² footprint with 0.4mm off-board height
Occupies 40% less board space than the DFN1006/SOT883
package, enabling designers to shrink designs while
maintaining performance.
Higher power density
These DFN leadless package is thermally efficient with a
thermal resistance of only 135ºC/W enabling a greater power
density to be achieved.
Turn-on VGS(th) < 1V
These MOSFETs have VGS(th) < 1V enabling low voltage
applications to fully enhance the MOSFET channel under low
power conditions.
Page 5
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 6
8V – 29V N-CHANNEL (CONTINUED)
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
Min. Max.
VGS (th) (V)
Package
DMN2004VK
Dual
Yes
a
20
a
8
a
0.54
a
0.25
a
550
a
700
a
900
a
0.5
1
87
a
a
SOT563
DMN2004WK
Single
Yes
20
8
0.54
0.2
550
700
900
0.5
1
87
-
SOT323
DMN2400UFB
Single
Yes
20
12
0.75
0.47
550
750
900
0.5
0.9
38
0.5
X1-DFN1006-3
DMN2400UFB4
Single
Yes
20
12
0.75
0.47
550
750
900
0.5
0.9
38
0.5
X2-DFN1006-3
DMN2400UFD
Single
Yes
20
12
0.9
0.8
600
800
1000
0.45
1
38
0.5
X1-DFN1212-3
DMN21D2UFB
Single
Yes
20
12
0.76
0.9
990
1200
2400
0.4
1
29
0.47
X1-DFN1006-3
a
a
a
a
a
DMN2990UDJ
Dual
Yes
20
8
0.45
0.35
990
1200
1800
0.4
1
28
0.5
SOT963
DMN2990UFA
Single
Yes
20
8
0.51
0.4
990
1200
1800
0.4
1
28
0.5
X2-DFN0806-3
DMN2990UFZ
Single
Yes
20
8
0.25
0.32
990
1200
1800
0.4
1
28
0.5
X2-DFN0606-3
Dual
Yes
20
10
0.3
0.4
1500
1700
3500
0.53
0.9
37
-
X2-DFN1310-6
DMN2005LP4K
Single
Yes
20
10
0.3
0.4
1500
1700
3500
0.53
0.9
37
-
X2-DFN1006-3
DMN2005LPK
Single
Yes
20
10
0.44
0.45
1500
1700
3500
0.53
0.9
37
-
X1-DFN1006-3
DMN26D0UDJ
Dual
Yes
20
10
0.24
0.3
3000
4000
6000
0.45
1.05
14.5
-
SOT963
DMN26D0UFB4
Single
Yes
20
10
0.24
0.35
3000
4000
6000
0.45
1.05
14.5
-
X2-DFN1006-3
DMN26D0UT
Single
Yes
20
10
0.23
0.3
3000
4000
6000
0.5
1
14.5
-
SOT523
DMN2005K
Single
Yes
20
10
0.3
0.35
-
1700
3500
0.53
0.9
37
-
SOT23
DMN2600UFB
Single
Yes
25
8
1.3
0.54
350
450
600
0.45
1
75
0.85
X1-DFN1006-3
DMG301NU
DMN2005DLP4K
Single
Yes
25
8
0.26
0.4
4000
5000
-
0.7
1.1
27.9
0.36
SOT23
DMG6301UDW
Dual
Yes
25
8
0.24
0.3
4000
5000
-
0.65
1.5
27.9
0.36
SOT363
DMN25D0UFA
Single
Yes
25
8
0.32
0.63
4000
5000
-
0.6
1.2
27.9
0.36
X2-DFN0806-3
DMN3150LW
Single
No
28
12
1.6
0.35
88
138
-
0.62
1.4
300
-
SOT323
IDS (A)
PD (W)
8V – 29V P-CHANNEL
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(pF)
(nC)
Min. Max.
VGS (th) (V)
Package
DMP1012UCB9
Single
Yes
a
8
a
6
a
10
a
1.6
a
10
a
14
a
a
0.4
1.1
817
8.1
a
a
U-WLB1515-9
DMP1022UFDF
Single
Yes
12
8
9.5
2.1
15.3
19
26.5
0.35
0.8
2712
28.6
U-DFN2020-6
DMP1022UFDE
Single
Yes
12
8
9.1
2
16
21.5
26
0.35
0.8
2712
28.6
U-DFN2020-6 Type E
DMP1018UCB9
Single
Yes
12
6
7.6
1.8
18
22
-
0.4
1.3
457
4.9
U-WLB1515-9
DMP1245UFCL
Single
Yes
12
8
6.6
1.7
29
45
60
0.3
0.95
1600
16.1
X1-DFN1616-6 Type E
DMP1045U
Single
Yes
12
8
5.2
1.3
31
45
75
0.3
1
1400
15.8
SOT23
DMP1045UFY4
Single
Yes
12
8
5.5
1.7
33
41
-
0.3
1
1400
14.8
X2-DFN2015-3
DMP1055UFDB
Dual
Yes
12
8
3.9
1.4
59
81
115
0.4
1
1028
13
U-DFN2020-6 Type B
DMP1046UFDB
Dual
No
12
8
3.8
1.4
61
81
115
0.4
1
915
10.7
U-DFN2020-6 Type B
DMP1080UCB4
Single
Yes
12
6
3.3
1.6
80
93
-
0.4
1
213
2.5
U-WLB1010-4
DMP1200UFR4
Single
Yes
12
8
2
1.26
100
160
200
0.35
1
510
5.8
X2-DFN1010-3
DMP1096UCB4
Single
Yes
12
6
2.6
1.6
102
116
-
0.4
1
251
3.7
U-WLB1010-4
DMP1555UFA
Single
Yes
12
8
0.2
0.36
800
1100
3000
0.4
1
60
0.84
X2-DFN0806-3
DMG3415UFY4
Single
Yes
16
8
2.5
0.49
39
52
65
0.3
1
282
10
X2-DFN2015-3
DMP2006UFG
Single
No
20
10
17.5
2.3
5.5
7.5
12
0.4
1
5404
64
POWERDI3333-8
DMP2008UFG
Single
No
20
8
14
2.4
8
9.8
13
0.4
1
6909
72
POWERDI3333-8
DMP2018LFK
Single
Yes
20
12
9.2
2.1
16
20
-
0.45
1.2
4748
53
U-DFN2523-6
DMP2021UFDF
Single
Yes
20
8
9
2.1
16
22
40
0.35
1
2950
34
U-DFN2020-6
DMP2022LSS
Single
No
20
12
10
2.5
16
22
-
0.6
1.1
2444
28.1
SO-8
ZXM66P02N8
Single
No
20
12
8
1.56
25
45
-
0.7
-
2100
43.3
SO-8
a
Page 6
a
a
a
a
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 7
8V – 29V P-CHANNEL
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
(CONTINUED)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
Min. Max.
VGS (th) (V)
Package
DMP2023UFDF
Single
a
No
20
a
8
a
7.6
a
2.1
27
a
32
50
a
0.4
a
1
2000
a
27
a
U-DFN2020-6
Type F
DMP2033UCB9
Single
Yes
20
6
5.8
1.8
33
45
65
0.4
1.1
382
5.4
U-WLB1515-9
DMP2035U
Single
Yes
20
8
4
0.81
35
45
62
0.4
1
1610
15.4
SOT23
DMP2035UVT
Single
Yes
20
12
6
2
35
45
62
0.4
1.5
1610
15.4
TSOT26
DMP2066UFDE
Single
No
20
12
7.5
2.1
36
56
75
0.4
1.1
1537
14.4
U-DFN2020-6 Type E
DMP2038USS
Single
No
20
8
6.5
2.5
38
56
-
0.4
1.1
1520
14.4
SO-8
DMP2066LDM
Single
No
20
12
4.6
1.25
40
70
-
0.6
1.2
880
10.1
SOT26
DMP2066LSD
Dual
No
20
12
5.8
2
40
70
-
0.6
1.2
880
10.1
SO-8
DMP2066LSN
Single
No
20
12
4.6
1.25
40
70
-
0.6
1.2
880
10.1
SC59
DMP2066LSS
Single
No
20
12
6.5
2.5
40
70
-
0.6
1.2
880
10.1
SO-8
DMG3415U
Single
Yes
20
8
4
0.9
42.5
53
71
0.3
1
294
9.1
SOT23
DMP2100U
Single
Yes
20
10
4.3
1.3
43
75
-
0.3
1.4
220
9.1
SOT23
DMP2066LVT
Single
No
20
8
4.5
1.8
45
65
-
0.4
1.5
1537
14.4
SOT26
DMP2047UCB4
Single
Yes
20
6
4.1
1.6
47
60
-
0.4
1.2
218
2.3
U-WLB1010-4
DMG2305UX
Single
No
20
8
4.2
1.4
52
100
200
0.5
0.9
820
10.2
SOT23
DMP2069UFY4
Single
Yes
20
8
2.5
0.53
54
69
90
0.3
1
214
9.1
X2-DFN2015-3
DMP2305U
Single
No
20
8
4.2
1.4
60
90
113
0.5
0.9
800
7.6
SOT23
DMP2305UVT
Single
No
20
8
4.23
1.64
60
90
113
0.5
0.9
800
7.6
TSOT26
DMP2033UVT
Single
No
20
8
4.2
1.7
65
100
200
0.5
0.9
900
10.4
TSOT26
DMP2070UCB6
Single
No
20
8
3.5
1.47
70
90
110
0.4
1
210
2.9
U-WLB1510-6
DMP2160UFDB
Dual
No
20
12
3.8
1.4
70
85
-
0.45
0.9
536
6.5
U-DFN2020-6 Type B
DMP2160UFDBQ
Dual
No
20
12
3.8
1.4
70
85
-
0.45
0.9
536
6.5
U-DFN2020-6 Type B
Single
No
20
12
3
1.4
72
123
-
0.6
1.25
460
7.3
SOT23
Dual
No
20
12
4.6
1.2
75
110
-
0.45
1.1
595
6.5
SO-8
DMP2130L
Single
No
20
12
3
1.4
75
125
-
0.6
1.25
460
7.3
SOT23
DMP2160U
Single
No
20
12
3.3
1.4
75
96
140
0.4
0.9
627
6.5
SOT23
DMG2301U
Single
No
20
8
2.7
0.8
80
110
-
0.45
1
600
6.5
SOT23
DMP2130LDM
Single
No
20
12
3.4
1.25
80
130
-
0.6
1.25
460
7.3
SOT26
DMP2060UFDB
Single
Yes
20
12
3.2
1.4
90
137
-
0.35
1.4
881
11
U-DFN2020-6 Type B
ZXM64P02X
Single
No
20
12
3.5
1.1
90
130
-
0.7
-
950
5
MSOP-8
DMG3413L
Single
No
20
8
3
1.3
95
125
190
0.6
1.3
857
9
SOT23
MOSFET + Schottky
No
20
12
3.4
1.64
95
120
150
0.4
1.3
561
7
U-DFN2020-6 Type B
DMP2160UW
Single
No
20
12
1.5
0.35
100
120
160
0.4
0.9
627
6.5
SOT323
DMP2215L
Single
No
20
12
2.7
1.1
100
215
-
0.45
1.25
250
4.3
SOT23
DMP2225L
Single
No
20
12
2.6
1.1
110
225
-
0.45
1.25
250
4.3
SOT23
MOSFET + Schottky
No
20
20
3.3
1.8
125
-
-
0.5
2.2
410
3.7
SO-8
DMP2104LP
Single
No
20
12
1.5
0.5
150
200
240
0.45
1
330
-
X1-DFN1411-3
DMP2104V
Single
No
20
12
1.9
0.85
150
200
240
0.45
1
330
-
SOT563
DMP2240UDM
Single
No
20
12
2
0.6
150
200
240
0.45
1
340
-
SOT26
DMP2240UW
Single
No
20
12
1.5
0.25
150
200
240
0.45
1
340
-
SOT323
DMP2240UWQ
Single
No
20
12
1.5
0.25
150
200
240
0.45
1
340
-
SOT323
DMP2200UFCL
Single
Yes
20
8
1.7
1.6
200
290
390
0.4
1.2
184
2.2
U-DFN1616-6
ZXM62P02E6
Single
No
20
12
2.3
1.1
200
375
-
0.7
-
350
4.6
SOT26
DMP2200UDW
Single
Yes
20
8
0.9
0.6
260
500
1000
0.4
1.2
184
2.1
SOT363
MSOP-8
a
DMP2123L
DMG9933USD
DMS2095LFDB
DMS2085LSD
ZXMD63P02X
a
a
a
a
a
Dual
No
20
12
1.7
1.25
270
400
-
0.7
-
300
4.1
DMP2012SN
Single
Yes
20
12
0.7
0.5
300
500
-
0.5
1.2
178
-
SC59
DMP21D0UFB
Single
Yes
20
8
1.17
0.99
495
690
960
0.45
1.2
76.5
1
X1-DFN1006-3
DMP21D0UFB4
Single
Yes
20
8
1.17
0.99
495
690
960
0.45
1.2
76.5
1
X2-DFN1006-3
DMP21D0UFD
Single
Yes
20
8
1.14
0.93
495
730
960
0.45
1.2
76.5
1
X1-DFN1212-3
DMP21D0UT
Single
Yes
20
8
0.65
0.33
495
690
960
0.45
1.2
76.5
1
SOT523
ZXM61P02F
Single
No
20
12
0.9
0.625
600
900
-
0.7
1.5
160
3.5
SOT23
Page 7
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 8
8V – 29V P-CHANNEL
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
(CONTINUED)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
Min. Max.
VGS (th) (V)
Package
DMG1013T
Single
a
Yes
20
a
6
a
0.46
a
0.27
700
a
900
1300
a
0.5
a
1
62
a
0.58
a
SOT523
DMG1013UW
Single
Yes
20
6
0.82
0.31
750
1050
1500
0.5
1
62
0.62
SOT323
DMG1023UV
Dual
Yes
20
6
1.03
0.53
750
1050
1500
0.5
1
62
0.62
SOT563
DMP2004DMK
Dual
Yes
20
8
0.55
0.5
900
1400
2000
0.5
1
95
-
SOT26
DMP2004DWK
Dual
Yes
20
8
0.43
0.25
900
1400
2000
0.5
1
95
-
SOT363
a
DMP2004K
a
a
a
a
a
Single
Yes
20
8
0.6
0.55
900
1400
2000
0.5
1
95
-
SOT23
DMP2004VK
Dual
Yes
20
8
0.53
0.4
900
1400
2000
0.5
1
95
-
SOT563
DMP2004WK
Single
Yes
20
8
0.4
0.25
900
1400
2000
0.5
1
95
-
SOT323
DMP21D2UFA
Single
Yes
20
8
0.33
0.36
1000
1200
1600
0.3
1
55
0.8
X2-DFN0806-3
DMP21D5UFB4
Single
Yes
20
8
0.7
0.95
1000
1500
2000
0.5
1
46
0.5
X2-DFN1006-3
DMP21D5UFD
Single
Yes
20
8
0.6
0.8
1000
1500
2000
0.5
1
46
0.5
X1-DFN1212-3
DMP2004TK
Single
Yes
20
8
0.43
0.15
1100
1600
2400
0.5
1
95
-
SOT523
DMP22D6UT
Single
Yes
20
8
0.43
0.15
1100
1600
2600
0.5
1
95
-
SOT523
DMP22D4UFA
Single
Yes
20
8
0.33
0.4
1900
2400
3400
0.4
1
29
0.4
X2-DFN0806-3
DMP210DUFB4
Single
Yes
20
8
0.2
0.35
5000
7000
10000
0.5
1
14
-
X2-DFN1006-3
Dual
Yes
20
8
0.2
0.33
5500
7500
11500
0.45
1.15
14
-
SOT963
DMP2039UFDE4
Single
Yes
25
8
7.3
2.4
26
33
40
0.4
1
2600
28.2
X2-DFN2020-6
DMP2039UFDE
Single
Yes
25
8
6.7
2
27
34
40
0.4
1
2580
28.2
U-DFN2020-6 Type E
DMP2540UCB9
Single
Yes
25
6
5.2
1.8
40
50
60
0.4
1.1
342
4.8
U-WLB1515-9
DMG302PU
Single
Yes
25
8
0.17
0.45
10000
-
-
0.65
1.5
27.2
0.35
SOT23
DMP213DUFA
Single
Yes
25
8
0.166
0.36
10000 13000
-
0.65
1.5
27.2
0.35
X2-DFN0806-3
DMP210DUDJ
OPTIMIZED COMPLEMENTARY
MOSFETS ENHANCE BUCK
CONVERTER POWER DENSITY
Did you know? Aimed at increasing the power
density of DC-DC converters, the DMC1028UFDB
complementary MOSFET pair integrates an Nchannel MOSFET and a P-channel MOSFET in a
single DFN2020 package.
The design is customized for point-of-load (POL)
converters that step down from 3.3V to 1V for core
voltage supply to ASICs.
THE DIODES ADVANTAGE
Target applications are Ethernet network controllers
and processors used in such equipment as routers,
network interface controllers (NICs), switches, digital
subscriber line (DSL) adaptors, servers, and
set-top boxes (STBs).
Complementary N+P
Integrating N-channel and P-channel into single DFN2020 saves space
and overall doubles the power density by replacing two single
DFN2020 parts.
Buck converters implemented using a separate PWM
controller and external MOSFETs enhance design
flexibility and provide for distributed heat dissipation
from the switching elements.
Optimized MOSFETs for increased efficiency
The N-channel has a low RDS(ON) = 19mΩ at VGS=3.3V to minimize the
conduction losses as it is mostly on for two-thirds of the switching
cycle; and the P-channel has a low QG = 5nC at VGS=3.3V to minimize
the switching losses.
The performance parameters of the DMC1028UFDB
MOSFETs have been optimized to maximize
efficiency in 3.3V to 1V buck converters while driving
loads up to 3A.
Page 8
P-channel for high-side
Implementing the control FET on the high-side in the buck converter
with a P-channel simplifies the design and reduces the component
count compared to using an N-channel solution that would require a
charge pump.
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 9
8V – 29V
Part Number
COMPLEMENTARY
Configuration
ESD V
VGS
Type Diode DS
(Y/N) (V) (±V)
N
a
DMC1017UPD
a
DMC25D1UVT
DMC1028UFDB
DMC1029UFDB
DMC1030UFDB
DMC1229UFDB
DMC2020USD
DMC2038LVT
DMC2041UFDB
ZXMD63C02X
DMC2700UDM
DMG1016UDW
DMG1016V
DMC2004DWK
DMC2004LPK
DMC2004VK
DMC2400UV
DMC2990UDJ
Complementary
No
12
a
8
a
IDS (A)
PD (W)
RDS(ON) (mΩ max)
at VGS=
@TA=25°C @TA=25°C 4.5V
9.5
a
a
2.3
VGS (th) (V) CISS typ @ QG typ @
VGS = ½VDSS VGS = 10V
(pF)
(nC)
Min. Max.
2.5V
1.8V
17
a
25
a
a
0.6
1.5
1787
a
18.6
32
53
-
0.6
1.5
2100
23.7
4000
-
-
0.65
1.5
27.6
0.4
55
70
100
0.35
1.5
9.7
24.5
25
32
40
0.4
1
787
10.5
80
100
140
0.4
1
576
6.7
29
34
44
0.4
1
914
10.5
61
81
115
0.4
1
915
10.7
34
40
50
0.4
1
1003
12.2
59
81
115
0.4
1
1028
13
29
34
44
0.4
1
914
10.5
61
81
115
0.4
1
915
10.7
20
28
-
0.5
1.5
1149
11.6
33
45
-
0.4
1
1610
15.4
35
43
56
0.4
1
400
5.7
74
110
168
0.4
1
530
7
40
65
-
0.35
1.4
713
8
90
137
-
0.35
1.4
881
11
130
150
-
0.7
-
360
6
270
400
-
0.7
-
300
5.25
400
500
700
0.5
1
65
0.74
700
900
1300
0.5
1
63
0.62
450
600
750
0.5
1
65
0.74
750
1050
1500
0.5
1
63
0.62
400
500
700
0.5
1
65
0.74
700
900
1300
0.5
1
63
0.62
900
a
a
a
POWERDI5060-8
a
P
No
12
8
6.9
N
Yes
25
8
0.5
P
Yes
12
8
3.9
N
Yes
12
8
6
P
Yes
20
8
3.4
N
No
12
8
5.6
P
No
12
8
3.8
N
Yes
12
8
5.1
P
Yes
20
8
3.9
N
No
12
8
5.6
P
No
12
8
3.8
N
Yes
20
10
7.8
P
Yes
20
10
6.3
N
No
20
12
4.5
P
No
20
12
3.1
N
Yes
20
12
4.7
P
Yes
20
12
3.2
N
No
20
12
2.4
P
No
20
12
1.7
N
Yes
20
6
1.34
P
Yes
20
6
1.14
N
Yes
20
6
1.07
P
Yes
20
6
0.85
N
Yes
20
6
0.87
P
Yes
20
6
0.64
N
Yes
20
8
0.54
P
Yes
20
8
0.43
N
Yes
20
8
0.75
P
Yes
20
8
0.6
N
Yes
20
8
0.67
P
Yes
20
8
0.53
N
Yes
20
8
1
P
Yes
20
8
0.7
N
Yes
20
8
0.45
P
Yes
20
8
0.31
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
Complementary
1.3
1.36
1.4
1.36
1.4
1.8
1.1
1.4
1.25
1.12
0.33
0.53
0.25
0.5
0.4
1
0.35
Package
a
TSOT26
U-DFN2020-6 Type B
U-DFN2020-6 Type B
U-DFN2020-6 Type B
U-DFN2020-6 Type B
SO-8
TSOT26
U-DFN2020-6 Type B
MSOP-8
SOT26
SOT363
SOT563
550
700
0.5
1
85
-
900
1400 2000
0.5
1
95
-
550
700
0.5
1
85
-
900
1400 2000
0.5
1
95
-
550
700
0.5
1
85
-
900
1400 2000
0.5
1
95
-
500
700
0.5
0.9
37
0.5
1000 1500 2000
0.5
1
46
0.5
990
1800
0.5
1
27.6
0.5
1900 2400 3400
0.4
1
28.7
0.4
SOT363
900
X1-DFN1612-6
900
SOT563
900
SOT563
1200
SOT963
Page 9
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 10
DUAL, COMMON-SOURCE / DRAIN
RDS(ON) (mΩ max)
ESD V
IDS (A)
PD (W)
VGS (th) (V) CISS typ @ QG typ @
VGS
at VGS=
Diode DS
VGS = ½VDSS VGS = 4.5V
(Y/N) (V) (±V) @T =25°C @T =25°C 4.5V 2.5V 1.8V Min. Max.
(nC)
(pF)
A
A
Part Number
Configuration
DMN1033UCB4
N+N Common Drain
a
Yes
a
12
a
6
a
5.5
a
1.45
a
26
a
31
33
a
0.35
a
0.7
2500
37
a
a
U-WLB1818-4
DMN2011UFX
N+N Common Drain
Yes
20
12
12.2
2.1
9.5
13
-
0.3
1
2248
24
V-DFN2050-4
DMN2013UFX
N+N Common Drain
Yes
20
8
10
0.78
11.5
14
-
0.5
1.1
2607
32.4
W-DFN5020-6
DMN2014LHAB
N+N Common Drain
Yes
20
12
9
0.8
13
18
28
0.3
1.1
1550
16
U-DFN2030-6 Type B
DMN2016LHAB
N+N Common Drain
Yes
20
12
7.5
1.2
15.5
20
30
0.5
1.1
1550
16
U-DFN2030-6 Type B
DMN2016UTS
N+N Common Drain
Yes
20
8
8.6
0.88
14.5
16.5
-
0.4
1
1495
16.5
TSSOP-8
DMN2016LFG
N+N Common Drain
Yes
20
8
5.2
0.77
18
22
30
0.4
1.1
1472
16
U-DFN3030-8
DMN2019UTS
N+N Common Drain
Yes
20
12
5.4
0.78
21
24
31
0.35
0.95
143
8.8
TSSOP-8
DMN2028UFDH
N+N Common Drain
Yes
20
12
6.8
1.1
22
26
36
0.5
1
151
8.5
POWERDI3030-8
DMG6968UTS
N+N Common Drain
Yes
20
12
5.2
1
23
27
34
0.35
0.95
143
8.8
TSSOP-8
DMG8601UFG
N+N Common Drain
Yes
20
12
6.1
0.92
23
27
34
0.35
1.05
143
8.8
U-DFN3030-8
DMG6968UDM
N+N Common Drain
Yes
20
12
6.5
0.85
24
28
34
0.5
0.9
143
8.8
SOT26
DMG8822UTS
N+N Common Drain
No
20
8
4.9
0.87
25
29
37
0.5
0.9
841
9.6
TSSOP-8
DMN2040LTS
N+N Common Drain
No
20
12
6.7
0.89
26
36
-
0.5
1.2
570
5.2
TSSOP-8
DMG9926UDM
N+N Common Drain
No
20
8
4.2
0.98
28
32
40
0.5
0.9
856
8.3
SOT26
DMP2035UTS
P+P Common Drain
Yes
20
8
6.04
0.89
35
45
62
0.4
1
1610
15.4
TSSOP-8
DMP2100UCB9
P+P Common Source
Yes
20
6
4
1.6
100
130
175
0.4
0.9
232
3.3
U-WLB1515-9
DMG5802LFX
N+N Common Drain
Yes
24
12
6.5
0.98
15
20
-
0.6
1.5
1080
14.5
W-DFN5020-6
40
-
0.5
1.3
2564
29
X1-WLB1818-4
0.6
1.2
38
-
SOT353
a
DMN2023UCB4
DMN32D2LDF
N+N Common Drain
Yes
24
12
6
1.45
26
N+N Common Source
Yes
30
10
0.4
0.28
1200
a
1500 2200
a
Package
a
CHIP-SCALE BI-DIRECTIONAL
MOSFET SAVES SPACE
Did you know? The DMN2023UCB4 bi-directional MOSFET
provides superior protection for charging 1- and 2-cell
lithium batteries. Its low on-state resistance reduces
power loss while its thin, chip-scale packaging allows
designers to use the space saved to increase battery
capacity. Target end-markets include smartphones,
tablets, cameras, portable media players, and similar
consumer products where size, weight and battery life are
all key performance factors.
Designed to minimize on-state resistance for lower power
loss, the DMN2023UCB4 delivers an RDS(ON) of less than
26mΩ. In addition, its dual, N-channel common-drain
configuration particularly suits the charging circuits
required for 1- and 2-cell lithium batteries, which
commonly use a low-side battery switch. For applications
requiring a high-side connection, Diodes Incorporated
also offers the DMP2100UCB9, which provides a dual
P-channel common-source MOSFET design.
The above features, coupled with a chip-scale package
footprint of just 1.8mm x 1.8mm and a thickness of
<0.4mm, make this new generation, bi-directional
MOSFET well-suited for battery management, load switch
and battery protection applications where smaller form
factors are important. Other features include a gate
threshold voltage of less than 1V, which is important to
fully enhance the channel under low voltage operation,
and built-in gate protection against electrostatic
discharge (ESD) voltages of >2kV.
Page 10
THE DIODES ADVANTAGE
Bi-directional, dual N-channel and P-channel MOSFETs
configured for low-side and high-side operation as the battery
protection switch, respectively.
Bi-directional MOSFET
Combining dual-power MOSFETs back-to-back to block
current flow in both directions when off and have low
conduction losses when on.
Small footprint
1.8mm x 1.8mm footprint and a thickness of < 0.4mm enables
more space in the battery pack for additional cells to increase
mAh capacity.
Low on-resistance and threshold
DMN2023UCB4 has RSS(on) <26mΩ minimizes conduction
losses to increase battery life while VGS(th) <1V ensures the FET
is fully enhanced under low operating voltage.
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 11
30V N-CHANNEL
Part Number
ESD V
VGS
Configuration Diode DS
(Y/N) (V) (±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
PD (W)
@TA=25°C @TA=25°C
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS= ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
1.8V
Package
DMN3008SFG
Single
No
30
a
20
a
17.6
0.9
4.6
a
5.5
a
a
a
-
3690
a
41
a
86
a
a
POWERDI3333-8
DMN3007LSS
Single
No
30
20
16
2.5
7
10
-
-
2714
31.2
64.2
SO-8
DMN3010LFG
Single
No
30
20
30
0.9
8.5
10.5
-
-
2075
16.1
37
POWERDI3333-8
DMN3010LSS
Single
No
30
20
16
2.5
9
13
-
-
2096
9
13
SO-8
DMG8880LK3
Single
No
30
20
16.5
1.68
9.3
14
-
-
1289
14.4
27.6
TO252 (DPAK)
DMN3010LK3
Single
No
30
20
43
1.6
9.5
11.5
-
-
2075
17
37
TO252 (DPAK)
DMG7702SFG
Single
No
30
20
12
0.89
10
15
-
-
1296
14.7
31.6
POWERDI3333-8
DMS3012SFG
Single
No
30
20
12
0.89
10
15
-
-
1296
14.7
31.6
POWERDI3333-8
DMG4406LSS
Single
No
30
20
10.3
1.5
11
15
-
-
1281
12.5
26.7
SO-8
DMG7430LFG
Single
No
30
20
10.5
0.9
11
15
-
-
1281
12.5
26.7
POWERDI3333-8
DMN3016LFDE
Single
No
30
20
10
0.73
12
16
-
-
1415
11.3
25.1
U-DFN2020-6 Type E
DMN3016LK3
Single
No
30
20
12.4
1.6
12
16
-
-
1415
11.3
25.1
TO252 (DPAK)
DMN3016LSS
Single
No
30
20
10.3
1.5
12
16
-
-
1415
11.3
25.1
SO-8
DMS3014SFG
Single
No
30
12
9.5
1
13
14
-
-
2296
45.7
19.3
POWERDI3333-8
DMS3016SFG
Single
No
30
12
10.2
0.98
13
16
-
-
1886
19.5
44.6
POWERDI3333-8
DMS3016SSSA
Single
No
30
12
9.8
1.54
13
16
-
-
1849
18.5
43
SO-8
DMN4468LSS
Single
No
30
20
10
1.52
14
20
-
-
867
-
18.85
SO-8
DMN4800LSS
Single
No
30
25
8.6
1.46
14
20
-
-
798
8.7
-
SO-8
DMN4800LSSL
Single
No
30
20
8
1.46
14
20
-
-
798
8.7
-
SO-8
DMN3015LSD
Dual
No
30
20
8.4
1.2
15
18
-
-
1415
11.3
25.1
SO-8
DMG4468LFG
Single
No
30
20
7.62
0.99
15
23.5
-
-
867
-
18.85
U-DFN3030-8
DMG4800LSD
Dual
No
30
25
8.4
1.17
16
22
-
-
798
8.6
-
SO-8
DMG4468LK3
Single
No
30
20
9.7
1.68
16
25
-
-
867
-
18.85
TO252 (DPAK)
ZXMN3B04N8
Single
No
30
12
8.9
3
-
25
40
-
2480
23.1
-
SO-8
DMG4800LK3
Single
No
30
25
10
1.71
17
24
-
-
798
8.7
-
TO252 (DPAK)
DMG4800LFG
Single
No
30
20
7.44
0.94
17
24
-
-
798
8.7
-
U-DFN3030-8
DMN3030LFG
Single
No
30
25
8.6
0.9
18
27
-
-
751
9
17.4
POWERDI3333-8
DMN3025LFG
Single
No
30
25
7.5
2
18
28
-
-
605
5.3
11.6
POWERDI3333-8
DMN3030LSS
Single
No
30
25
9
2.5
18
30
-
-
741
7.6
16.7
SO-8
DMN3029LFG
Single
No
30
25
8
1
18.6
26.5
-
-
580
5.3
11.3
POWERDI3333-8
DMG7410SFG
Single
No
30
25
8
1
20
27
-
-
580
5.3
11.3
POWERDI3333-8
DMG4822SSD
Dual
No
30
20
10
1.42
20
31
-
-
479
5
10.5
SO-8
DMN3025LSS
Single
No
30
20
7.2
1.4
20
31
-
-
641
6
13.2
SO-8
DMN3018SFG
Single
Yes
30
25
8.5
1
21
35
-
-
697
6
13.2
POWERDI3333-8
DMN3018SSS
Single
Yes
30
25
7.3
1.4
21
35
-
-
697
6
13.2
SO-8
DMG4496SSS
Single
No
30
25
10
1.42
21.5
29
-
-
493.5
4.7
10.2
SO-8
DMN3033LSD
Dual
No
30
20
6.9
2
22
27
-
-
725
6.4
13
SO-8
DMN3018SSD
Dual
No
30
25
6.7
1.5
22
30
-
-
697
6
13.2
SO-8
DMN3026LVT
Single
No
30
20
6.6
1.2
23
30
-
-
643
5.7
12.5
TSOT26
DMG4466SSS
Single
No
30
25
10
1.42
23
33
-
-
479
5
10.5
SO-8
DMG4466SSSL
Single
No
30
20
10
1.42
23
33
-
-
479
5
10.5
SO-8
DMG7408SFG
Single
No
30
20
7
1
23
33
-
-
479
5
10.5
POWERDI3333-8
DMN3024SFG
Single
No
30
20
7.5
0.9
23
33
-
-
479
5
10.5
POWERDI3333-8
DMN3024LSD
Single
No
30
20
7.2
2
24
36
-
-
608
6.3
12.9
SO-8
DMN3024LSS
Single
No
30
20
8.5
2.8
24
36
-
-
608
6.3
12.9
SO-8
DMN3024LK3
Single
No
30
20
14.4
8.9
24
39
-
-
608
6.3
12.9
TO252 (DPAK)
a
ZXMN3F31DN8
a
a
a
a
a
Dual
No
30
20
7.3
2.1
24
39
-
-
608
6.3
12.9
SO-8
DMN3404L
Single
No
30
20
4.2
0.72
28
42
-
-
498
5.3
11.3
SOT23
DMN3032LE
Single
No
30
20
5.6
1.8
29
35
-
-
498
4.1
11.3
SOT223
DMN3033LSN
Single
No
30
20
6
1.4
30
40
-
-
755
10.5 @ 5V
-
SC59
DMG6402LVT
Single
No
30
20
6
1.75
30
42
-
-
498
-
11.4
TSOT26
Page 11
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 12
30V N-CHANNEL (CONTINUED)
Part Number
ESD V
VGS
Configuration Diode DS
(Y/N) (V) (±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
PD (W)
@TA=25°C @TA=25°C
10V
4.5V
DMN3033LDM
Single
a
No
a
30
20
6.9
2
33
40
DMN3051L
Single
No
30
20
4.5
0.7
38
64
DMN3051LDM
Single
No
30
20
4
0.9
38
DMN3070SSN
Single
Yes
30
20
4.2
0.78
40
DMN3053L
Single
No
30
12
4
0.76
45
DMN3115UDM
Single
Yes
30
8
3.2
0.9
DMN3067LW
Single
No
30
12
2.6
1.1
ZXMN3F30FH
Single
No
30
20
4.6
ZXMN3A03E6
Single
No
30
20
4.6
DMG3402L
Single
No
30
12
DMN3065LW
Single
No
30
12
DMN3150L
Single
No
30
12
DMN3112SSS
Single
No
30
20
DMG3418L
Single
No
30
12
ZXMN3B14F
Single
No
30
12
DMN3200U
Single
Yes
30
8
DMN3135LVT
Dual
No
30
20
ZXMN3A14F
Single
No
30
20
DMN3110S
Single
No
30
20
DMN3300U
Single
No
30
ZXMN3B01F
Single
No
ZXMN3A01E6
Single
ZXMN3A01F
Single
ZXMN3AMC
Dual
a
ZXMD63N03X
DMN100
DMN3190LDW
ZXM61N03F
2.5V
Package
-
755
6.4
13
a
a
SOT26
-
-
424
-
9
SOT23
64
-
-
424
4.3
8.6
SOT26
50
80
-
697
6
13.2
SC59
50
55
-
676
7.3
17.2
SOT23
-
60
80
-
476
-
-
SOT26
-
67
98
-
447
4.6
-
SOT323
1.4
47
65
-
-
318
-
7.7
SOT23
1.7
50
65
-
-
600
6.9 @ 5V
12.6
SOT26
4
1.4
52
65
85
-
464
5.5
11.7
SOT23
4
0.77
52
65
85
-
465
5.5
11.7
SOT323
3.8
1.4
54
72
115
-
305
3.7
8.2
SOT23
6
2.5
57
112
-
-
268
-
-
SO-8
4
1.4
60
70
150
-
464
5.5
-
SOT23
3.5
1.5
-
80
140
-
568
6.7
-
SOT23
2.2
0.65
-
90
110
200
290
-
-
SOT23
3.5
0.84
60
100
-
-
305
4.1
9
TSOT26
3.9
1.5
65
95
-
-
448
-
8.6
SOT23
3.3
0.74
73
110
-
-
306
4.1
8.6
SOT23
12
2
0.7
-
150
200
250
193
-
-
SOT23
30
12
2
0.806
-
150
240
-
258
2.93
-
SOT23
No
30
20
3
1.7
120
180
-
-
190
2.3 @ 5V
3.9
SOT26
No
30
20
2
0.625
120
180
-
-
190
2.3 @ 5V
3.9
SOT23
No
30
20
3.7
2.45
120
180
-
-
190
2.3
3.9
W-DFN3020-8 Type B
MSOP-8
a
a
a
a
a
a
-
CISS typ @ QG typ @ QG typ @
VGS= ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
1.8V
a
a
a
a
a
Dual
No
30
20
2.3
1.25
135
200
-
-
290
-
8
Single
Yes
30
20
1.1
0.5
150
170
-
-
150
-
5.5
SC59
Dual
Yes
30
20
1
0.32
190
335
-
-
87
0.9
2
SOT363
Single
No
30
20
1.4
0.625
220
300
-
-
150
-
4.1
SOT23
®
DIODES’ SCHOTTKY INTEGRATED MOSFET
THE DIODES ADVANTAGE
Diodes Incorporated has designed and patented a proprietary
process that integrates a N-channel MOSFET and an
anti-parallel schottky diode into a single die.
Targeted at the low-side synchronous MOSFET position of
synchronous point-of-load (PoL) converters, the lower VSD and
Qrr of the DIOFET® family reduce conduction and switching
losses improving the overall efficiency of the PoL converter
lowering its operating temperature.
Low RDS(ON)
The low RDS(ON) of the DIOFET minimize the conduction losses
traditionally associated with high duty cycle synchronous MOSFETs.
DIOFET is a registered trademark of Diodes Incorporated.
Page 12
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:31 Page 13
30V N-CHANNEL (CONTINUED)
Part Number
ESD V
VGS
Configuration Diode DS
(Y/N) (V) (±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS= ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
1.8V
PD (W)
@TA=25°C @TA=25°C
Package
DMN3730U
Single
Yes
a
30
8
0.94
0.71
a
460
a
560
a
730
a
64.3
a
1.6
a
-
a
SOT23
DMN3730UFB
Single
Yes
30
8
0.91
0.69
-
460
560
730
64.3
1.6
-
X1-DFN1006-3
DMN3730UFB4
Single
Yes
30
8
0.91
0.69
-
460
560
730
64.3
1.6
-
X2-DFN1006-3
DMN3900UFA
Single
Yes
30
8
0.65
0.49
-
760
930
1500
42.2
0.7
-
X2-DFN0806-3
DMN31D5UFZ
Single
Yes
30
12
0.22
0.393
-
1500
2000
3000
22.2
0.35
-
X2-DFN0606-3
DMN32D2LDF
Dual
Yes
30
10
0.4
0.28
-
-
1500
2200
39
-
-
SOT353
DMN32D2LFB4
Single
Yes
30
10
0.3
0.35
-
-
1500
2200
39
-
-
X2-DFN1006-3
DMN32D2LV
Dual
Yes
30
10
0.4
0.4
-
-
1500
2200
39
-
-
SOT563
DMN313DLT
Single
Yes
30
20
0.27
0.28
-
2000 @ 4V
3200
-
36.3
0.5
-
SOT523
DMN33D8LDW
Dual
Yes
30
20
0.25
0.35
2400
3000
7000
20000
48
0.55
1.23
SOT363
DMN33D8LV
Dual
Yes
30
20
0.35
0.43
2400
3000
7000
-
48
0.55
1.23
SOT563
DMN63D8LDW
Dual
Yes
30
20
0.26
0.3
2800
4200
13000
-
22
0.43
0.87
SOT363
DMN63D8LV
Dual
Yes
30
20
0.26
0.45
2800
4200
13000
-
22
0.43
0.87
SOT563
DMN33D8L
Single
Yes
30
20
0.25
0.35
3000 3800 @ 5V
-
-
50
-
1.2
SOT23
DMN33D8LT
Single
Yes
30
20
0.115
0.3
7000
-
48
0.55
1.23
SOT523
a
a
a
a
a
a
-
5000 @ 4V
a
a
30V P-CHANNEL
Part Number
Configuration
ESD
Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
Package
DMP3010LPS
Single
a
No
30
a
20
a
36
2.18
7.5
10
a
a
6234
a
59.2
a
126.2
a
a
POWERDI5060-8
DMG4413LSS
Single
No
30
20
12
2.2
7.5
10.2
-
4965
46 @ 5V
-
SO-8
DMP3010LK3
Single
No
30
20
17
1.7
8
10.2
-
6234
59.2
-
TO252 (DPAK)
DMP3012LPS
Single
No
30
20
13.2
1.29
9
12
-
6807
66
139
POWERDI5060-8
DMP3017SFG
Single
Yes
30
25
11.5
0.94
10
18
-
2246
20.5
41
POWERDI3333-8
DMP3015LSS
Single
No
30
20
13
2.5
11
17
-
2748
30
60.4
SO-8
DMG4407SSS
Single
Yes
30
25
9.9
1.45
13
14
-
2246
20.5
41
SO-8
DMG7401SFG
Single
Yes
30
25
9.8
0.94
13
25
-
-
20.5
41
POWERDI3333-8
DMP3017SFK
Single
Yes
30
25
10.4
1
14
25
-
2207
21.6
42.7
U-DFN2523-6
DMP3020LSS
Single
No
30
25
12
2.5
14
25
-
1802
15.3
30.7
SO-8
DMP3008SFG
Single
No
30
20
8.6
0.9
17
25
-
2230
23
47
POWERDI3333-8
DMP3035LSS
Single
No
30
25
11
2
18
36
-
1655
15.3
30.7
SO-8
DMG4435SSS
Single
No
30
25
7.3
2.5
20
29 @ 5V
-
1614
18.9 @ 5V
35.4
SO-8
DMP3035SFG
Single
No
30
25
8.5
0.95
20
29 @ 5V
-
1633
17
35.5
POWERDI3333-8
DMP3028LFDE
Single
No
30
20
6.8
0.66
25
38
-
-
10.9
22
U-DFN2020-6
DMP3028LSD
Single
No
30
20
6
1.3
25
38
-
1241
10.9
22
SO-8
DMP3037LSS
Single
No
30
20
5.8
1.2
32
50
-
931
9.7
19.3
SO-8
DMP3065LVT
Single
Yes
30
20
4.9
1.2
42
65
-
587
6.3
12.3
TSOT26
DMP3056LDM
Single
No
30
20
4.3
1.25
45
65
-
948
10.1
21.1
SOT26
DMP3056LSD
Dual
No
30
20
6.9
2.5
45
65
-
722
6.8
13.7
SO-8
DMP3056LSS
Single
No
30
20
7.1
2.5
45
65
-
722
6.8
13.7
SO-8
ZXMP3A16G
Single
No
30
20
7.5
3.9
45
70
-
1022
17.2 @ 5V
29.6
SOT223
DMP3050LSS
Single
No
30
25
4.8
1.7
45
80
-
620
5.1
10.5
SO-8
DMG3401LSN
Single
No
30
12
3
0.8
50
60
85
1326
11.6
25.1
SC59
DMG3407SSN
Single
No
30
20
4
1.1
50
72
-
582
6.5
13.3
SC59
a
a
a
a
a
a
Page 13
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 14
30V P-CHANNEL (CONTINUED)
Part Number
Configuration
ESD
Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
Package
DMP3050LVT
Single
a
No
30
a
25
a
4.5
1.8
50
90
a
a
620
a
5.1
a
10.5
a
a
TSOT26
DMP3099L
Single
No
30
20
3.8
1.08
65
99
-
563
5.2
11
SOT23
DMP3098LDM
Single
No
30
20
4
1.25
65
115
-
336
4
7.8
SOT26
DMP3098LSD
Dual
No
30
20
4.4
1.8
65
115
-
336
4
7.8
SO-8
DMP3098LSS
Single
No
30
20
5.3
2.5
65
115
-
336
4
7.8
SO-8
DMP3085LSD
Dual
No
30
20
3.9
1.1
70
95
-
563
5.2
11
SO-8
DMP3085LSS
Single
No
30
20
3.8
1.3
70
95
-
563
5.2
11
SO-8
ZXMP3A17E6
Single
No
30
20
4
1.7
70
110
-
630
8.28 @ 5V
15.8
SOT26
DMP3098L
Single
No
30
20
3.8
1.08
70
120
-
336
4
7.8
SOT23
DMP3105LVT
Single
No
30
12
3.9
1.15
75
98
150
839
9
19.8
TSOT26
ZXM64P03X
Single
No
30
20
3.8
1.1
75
100
-
825
-
46
MSOP-8
DMP3130L
Single
No
30
12
3.5
0.7
77
95
150
432
5.9
12
SOT23
ZXMP3F30FH
Single
No
30
20
3.4
1.4
80
140
-
370
-
7
SOT23
DMG2307L
Single
No
30
20
2.5
0.76
90
134
-
371.3
4
8.2
SOT23
DMP3160L
Single
No
30
20
2.7
1.08
122
190
-
384.4
4
ZXM62P03E6
Single
No
30
12
1.5
0.625
150
230
-
330
a
ZXMD63P03X
a
a
a
a
a
8.2
SOT23
10.2
SOT26
Dual
No
30
20
2
1.25
185
270
-
270
-
7
MSOP-8
ZXMP3A13F
Single
No
30
20
1.6
0.806
210
330
-
206
3.8 @ 5V
6.4
SOT23
DMP3030SN
Single
Yes
30
20
0.7
0.5
250
450
-
160
-
-
SC59
ZXM61P03F
Single
No
30
20
1.1
0.625
350
550
-
140
-
4.8
SOT23
DMP31D0U
Single
Yes
30
8
0.67
0.71
-
1000
1500
76
0.9
1.5 @ 8V
SOT23
DMP31D0UFB4
Single
Yes
30
8
0.76
0.92
-
1000
1500
76
0.9
1.5 @ 8V
X2-DFN1006-3
DMP32D4S
Single
Yes
30
20
0.3
0.37
2400
4000
16000
51.2
0.6
1.2
SOT23
DMP32D4SFB
Single
Yes
30
20
0.4
0.5
2400
4000
16000
51
0.6
1.3
X1-DFN1006-3
DMP32D4SW
Single
Yes
30
20
0.25
0.3
2400
4000
16000
51.2
0.6
1.2
SOT323
DMP32D9UFZ
Single
Yes
30
10
0.2
0.39
-
5000
6000
22.5
0.35
-
X2-DFN0606-3
NEW GENERATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET
THE DIODES ADVANTAGE
The PowerDI5060 package has a typical Rthj-c of 2.1ºC/W
which is 10 times lower than the familiar SO-8 package.
This superior thermal performance improves power dissipation,
reducing MOSFET junction temperature, enabling cooler,
more reliable running.
The low typical RDS(ON) of the DMP3010LPS ensures that on
state losses are kept to a minimum during load switching
and battery charging.
The DMP3010LPS is qualified to AECQ-101 standard and is
RoHS compliant.
Page 14
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 15
30V
Part Number
COMPLEMENTARY
Configuration
ESD V
VGS
Type Diode DS
(Y/N) (V) (±V)
N
a
DMC3016LSD
a
Complementary
No
Complementary
N
No
P
DMC3025LSD
Complementary
N
No
P
DMC3021LSD
Complementary
N
No
P
DMC3021LK4
Complementary
N
No
P
ZXMC3F31DN8
Complementary
N
No
P
ZXMC3A18DN8
Complementary
N
No
P
DMC3028LSDX
Complementary
N
No
P
DMC3028LSD
Complementary
N
No
P
DMC3032LSD
Complementary
N
No
P
ZXMC3A16DN8
Complementary
N
No
P
ZXMC3A17DN8
Complementary
N
No
P
DMG6601LVT
Complementary
N
No
P
DMG6602SVT
Complementary
N
No
P
ZXMC3AMC
Complementary
N
No
P
ZXMD63C03X
Complementary
N
No
P
DMC31D5UDJ
Complementary
N
P
TO252 (DPAK)
30
a
20
8.2
30
20
6.2
a
Yes
PD (W)
a
a
P
DMC3018LSD
RDS(ON) (mΩ max) CISS typ @ QG typ @
at VGS=
VGS = ½VDSS VGS = 4.5V
(pF)
(nC)
@TA=25°C @TA=25°C
10V
4.5V
IDS (A)
16
20
1415
11.3
25.1
28
38
1241
10.9
22
a
1.2
QG typ @
VGS = 10V
(nC)
a
a
a
a
a
30
20
9.1
30
20
6
30
20
6.5
30
20
4.2
30
20
8.5
30
20
7
30
20
9.4
30
20
6.8
30
20
7.3
30
20
5.3
30
20
7.6
30
20
6.3
30
20
5.5
30
20
5.8
30
20
7.1
30
20
7.4
30
20
8.1
30
20
7
30
20
6.4
30
20
5.4
30
20
5.4
30
20
4.4
30
12
3.8
30
12
2.5
30
20
3.4
30
20
2.8
30
20
3.7
30
20
2.7
30
20
2.3
30
20
2
30
12
0.22
30
12
0.2
SOT223
2.5
1.2
2.5
2.75
2.1
2.1
1.2
2.1
2.5
2.1
2.1
0.85
0.84
2.45
1.25
0.35
SOT23
Package
SO-8
a
a
20
32
631
5.9
12.4
45
65
722
7
13.7
20
32
501
4.6
9.8
45
85
590
5.1
10.5
21
32
767
7.8
16.1
39
53
1002
10
21.1
21
32
751
9
17.4
39
53
1039
10.1
21.1
24
39
608
-
12.9
45
80
670
-
12.7
25
30
1800
19.4 @ 5V
36
35
50
1603
25 @ 5V
45
27
35
641
6
13.2
25
41
1241
10.9
22
28
45
472
5.2
10.5
25
41
1678
16.4
31.6
32
46
404.5
-
9.2
39
53
1002
10.1
21.1
35
50
796
9.2
17.5
48
70
970
12.9
24.9
50
65
600
6.9 @ 5V
12.2
70
110
630
8.3 @ 5V
15.8
55
65
422
5.4
12.3
110
142
541
6.5
13.8
60
100
290
4
9
95
140
350
4
7
120
180
190
2.3
3.9
210
330
206
3.8
6.4
135
200
290
-
8
185
270
270
-
7
-
1500
22.6
0.38
-
-
5000
21.8
0.35
-
SOT26
SO-8
SO-8
SO-8
SO-8
TO252-4
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
TSOT26
TSOT26
W-DFN3020-8 Type B
MSOP-8
SOT963
DFN 1006
Page 15
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 16
31V – 50V N-CHANNEL
Part Number
ESD V
IDS (A)
PD (W)
VGS
Configuration Diode DS
(Y/N) (V) (±V) @T =25°C @T =25°C
A
A
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
1.8V
CISS typ @ QG typ @
VGS = ½VDSS VGS = 4.5V
(nC)
(pF)
QG typ @
VGS = 10V
(nC)
Package
DMN4008LFG
Single
a
No
a
40
a
20
19.2
2.3
7.5
a
10
a
20 @ 3.3V
a
3537
a
34
a
74
a
POWERDI3333-8
DMN4010LK3
Single
No
40
20
39
1.6
11.5
14.5
-
1810
-
37
TO252 (DPAK)
DMN4020LFDE
Single
No
40
20
8
0.66
20
28
-
1060
-
19.1
U-DFN2020-6 Type E
DMN4010LFG
Single
No
40
20
11.5
2.45
12
15
-
1810
17
37
POWERDI3333-8
DMN4030LK3
Single
No
40
20
13.7
8.9
30
50
-
604
6.5
12.9
TO252 (DPAK)
DMN4040SK3
Single
No
40
20
13.8
8.9
30
54
-
945
8.4
18.6
TO252 (DPAK)
DMN4026SSD
Dual
No
40
20
9
1.8
24
32
-
1060
8.8
19.1
SO-8
DMN4034SSS
Single
No
40
20
7.2
2.8
34
59
-
453
4.9
10
SO-8
DMN4027SSD
Dual
No
40
20
7.1
2.1
27
47
-
604
6.3
12.9
SO-8
ZXMN4A06G
Single
No
40
20
7
3.9
50
75
-
770 @ 40V
-
18.2
SOT223
DMN4031SSD
Dual
No
40
20
7
2.6
31
50
-
945
8.4
18.6
SO-8
DMN4036LK3
Single
No
40
20
12.2
8.5
36
61
-
453
4.9
9.2
TO252 (DPAK)
DMN4034SSD
Dual
No
40
20
6.3
2.1
34
59
-
453
4.9
10
SO-8
DMT5015LFDF
Single
No
50
20
9.1
1.97
15
23
-
902
6
14
U-DFN2020-6 Type F
DMN53D0U
Single
Yes
50
12
0.3
0.52
-
2000 @ 5V
2500
37
0.6
-
SOT23
DMN5010VAK
Single
Yes
50
20
0.28
0.25
-
2000 @ 5V
2500
50 @ max
-
-
SOT563
DMN53D0LW
Single
No
50
20
0.36
0.32
DMN55D0UT
Single
Yes
50
12
0.16
0.2
DMN5L06DMK
Single
Yes
50
20
0.305
DMN53D0L
Single
Yes
50
20
0.5
DMN53D0LDW
Single
Yes
50
20
0.36
DMN53D0LT
Single
Yes
50
20
DMN53D0LV
Single
Yes
50
20
BSN20
Single
No
50
20
DMN5L06K
Single
Yes
50
20
DMN5L06TK
Single
Yes
50
DMN5L06VAK
Single
Yes
DMN5L06VK
Single
Yes
DMN5L06WK
Single
Dual
a
DMN5L06DWK
BSS138
BSS138DW
a
a
a
2000 3000 @ 5V
a
a
-
45.8
0.6
1.2
SOT323
-
4000 @ 4V
5000
25 @ 10V
-
-
SOT523
0.4
-
2000 @ 5V
2500
50 @ max
-
-
SOT26
0.37
1600
2500
4500
46
0.6
-
SOT23
0.31
1600
2500
4500
46
0.6
-
SOT363
0.35
0.3
1600
2500
4500
46
0.6
-
SOT523
0.35
0.43
1600
2500
4500
46
0.6
-
SOT563
0.5
0.6
1800
2000
-
21.8 @ 10V
-
800
SOT23
0.3
0.35
-
2000 @ 5V
2500
50 @ max
-
-
SOT23
20
0.28
0.15
-
2000 @ 5V
2500
50 @ max
-
-
SOT523
50
20
0.28
0.25
-
2000 @ 5V
2500
50 @ max
-
-
SOT563
50
20
0.28
0.25
-
2000 @ 5V
2500
50 @ max
-
-
SOT563
Yes
50
20
0.3
0.25
-
2000 @ 5V
2500
50 @ max
-
-
SOT323
Yes
50
20
0.305
0.25
-
2000 @ 5V
2500
50 @ max
-
-
SOT363
Single
No
50
20
0.2
0.3
3500
-
-
50 max @ 10V
-
-
SOT23
Dual
No
50
20
0.2
0.2
3500
-
-
50 max @ 10V
-
-
SOT363
BSS138W
Single
No
50
20
0.2
0.2
3500
-
-
50 max @ 10V
-
-
SOT323
DMB54D0UV
Single
Yes
50
12
0.16
0.25
-
4000 @ 4V
5000
25 @ 10V
-
-
SOT563
AUTOMOTIVE ‘Q’ MOSFETS FOR REVERSE BATTERY PROTECTION
Application Requirements
Protect against reverse polarity connection of the battery during
vehicle maintenance. During the reconnection of a vehicle's
battery it is possible to reverse the battery polarities causing
damage to the vehicle's electronics.
REVERSE BATTERY PROTECTION CIRCUIT
DMP4015SPSQ
D
Simple, low cost, and minimal component count
S
Minimal power losses
G
Pulse ruggedness to ISO7637
VBat
AEC-Q101 and PPAP required
EMI Emissions
Key Products: 40V P-channel MOSFETs
DMP4015SPSQ in PowerDI5060
DMP4015SSSQ in SO-8
Page 16
DMP4015SK3Q in TO252 (DPAK)
Load
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 17
31V – 50V P-CHANNEL
Part Number
Configuration
ESD
Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
PD (W)
@TA=25°C @TA=25°C
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
Package
DMP4015SK3
P
a
No
40
a
25
a
14
3.5
11
a
15
a
a
4234
a
47.5 @ -5V
a
-
TO252 a(DPAK)
DMP4015SK3Q
P
No
40
25
14
3.5
11
15
-
4234
47.5 @ -5V
-
TO252 (DPAK)
DMP4015SPS
P
No
40
25
17
2.1
11
15
-
4234
47.5 @ -5V
47.5
POWERDI5060-8
DMP4015SPSQ
P
No
40
25
17
2.1
11
15
-
4234
47.5 @ -5V
-
POWERDI5060-8
DMP4015SSS
P
No
40
25
10.1
1.82
11
15
-
4234
47.5 @ -5V
-
SO-8
DMP4015SSSQ
P
No
40
25
10.1
1.82
11
15
-
4234
47.5 @ -5V
-
SO-8
DMP4025LK3
P
No
40
20
8.6
2.78
25
45
-
1643
14
33.7
TO252 (DPAK)
DMP4025LSD
P+P
No
40
20
7.6
2.14
25
45
-
1640
14
33.7
SO-8
DMP4025LSS
P
No
40
20
8
2.4
25
45
-
1640
14
33.7
SO-8
DMP4025SFG
P
No
40
20
7.2
1.95
25
40
-
1643
14
33.7
POWERDI3333-8
DMP4047LFDE
Single
No
40
20
6
2.1
33
50
-
1382
11.2
23.2
U-DFN2020-6
DMP4047SSD
Dual
No
40
20
6.5
1.8
45
55
-
1154
10.6
21.5
SO-8
DMP4050SSD
Dual
No
40
20
5.2
2.1
50
79
-
674
6.9
13.9
SO-8
DMP4050SSS
Single
No
40
20
6
2.8
50
79
-
674
6.9
13.9
SO-8
DMP4051LK3
Single
No
40
20
10.5
8.9
51
85
-
674
7
14
TO252 (DPAK)
ZXMP4A16G
Single
No
40
20
6.4
3.9
60
100
-
1007
13.6 @ 5V
26.1
SOT223
ZXMP4A16K
Single
No
40
20
9.9
9.5
60
100
-
965
16.5 @ 5V
29.6
TO252 (DPAK)
ZXMP4A57E6
Single
No
40
20
3.7
1.7
80
150
-
833
7
15.8
SOT26
BS250P
Single
No
45
20
0.23
0.7
14000
-
-
60 @ -10V
-
-
E-Line
BS250F
Single
No
45
20
0.09
0.33
14000
-
-
25 @ -10V
-
-
SOT23
SOT363
a
a
a
a
a
a
BSS84DW
Dual
No
50
20
0.13
0.3
-
10000 @ 5V
-
45 max
-
-
ZVP4105A
Single
No
50
20
0.175
0.625
-
10000 @ 5V
-
40 max
-
-
E-Line
BSS84
Single
No
50
20
0.13
0.3
-
10000 @ 5V
-
45 max
-
-
SOT23
SOT563
BSS84V
Dual
No
50
20
0.13
0.15
-
110000 @ 5V
-
45 max
-
-
BSS84W
Single
No
50
20
0.13
0.2
-
10000 @ 5V
-
45 max
-
-
SOT323
DMP56D0UFB
Single
Yes
50
8
0.2
0.425
-
6000 @ -4V
8000
50.54
0.58
-
X1-DFN1006-3
8000
DMP56D0UV
Dual
Yes
50
8
0.16
0.4
-
6000 @ -4V
50.54
0.58
-
SOT563
DMP58D0LFB
Single
Yes
50
20
0.31
1.22
-
8000 @ -5V 18000
27
-
-
X1-DFN1006-3
DMP58D0SV
Dual
Yes
50
20
0.16
0.4
-
8000 @ -5V
27
-
-
SOT563
-
MOSFETS FOR 3-PHASE BLDC MOTOR
3-PHASE BLDC CIRCUIT
Peak current
During startup the coils are energized by a high peak current, up to five times
greater than the continuous current rating.
dV/dt false-triggering
Commutating the coils induces rapid dV/dt changes on the MOSFET drain which
could cause false turn on by coupling charge onto the gate. This can be avoided
with the appropriate low (CGD x RG) and increasing VGS(TH).
Phase A Driver
Switching losses
In each commutation, the MOSFET is switching in the coil current as the drain
voltage collapses. With a high torque current in the coil then the MOSFET
switching time needs to be minimized to reduce the switching power losses.
Vcc
DMTH4004SPSQ
A
B
C
Vcc
Phase C Driver
High torque current
Under high motor torque the coil current increases and the conduction losses
(RDS(ON)) in the MOSFET are to be minimized to ensure the junction temperature
does not exceed the maximum rating.
Vcc
Phase B Driver
MOSFET Application Requirements
Key products
DMT series: shielded-gate MOSFETs with reduced conduction and switching losses.
Page 17
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 18
31V – 100V
COMPLEMENTARY
Part Number
Configuration
DMC4047LSD
Complementary
Type
N
VGS
(±V)
40
a
20
7
40
20
5.1
40
20
9 @ t<10S
40
20
6.5 @ t<10S
40
20
7.5
40
20
7.3
a
a
No
Complementary
N
No
P
DMC4040SSD
Complementary
N
No
P
DMC4028SSD
Complementary
N
No
P
DMC4050SSD
Complementary
N
No
P
ZXMC4A16DN8
Complementary
N
No
P
BSS8402DW
Complementary
N
No
P
DMC6040SSD
Complementary
N
No
P
ZXMC4559DN8
Complementary
N
No
P
DMC6070LFDH
Complementary
N
No
P
DMG1029SV
Complementary
N
No
P
ZXMC10A816N8
Complementary
a
IDS (A)
N
P
No
PD (W)
a
a
P
DMC4029SSD
RDS(ON) (mΩ max) CISS typ @ QG typ @ QG typ @
at VGS=
VGS = ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
@TA=25°C @TA=25°C 10V
4.5V
ESD V
DS
Diode
(Y/N) (V)
1.8
24
a
32
a
1060
a
8.8
19.1
45
55
1154
10.6
21.5
24
32
1060
8.8
19.1
45
55
1154
10.6
21.5
25
40
1790
16
37.6
25
45
1643
14
33.7
a
a
a
40
20
7.2
40
20
5.2
40
20
5.5
40
20
5.8
40
20
5.2
40
20
4.7
60
20
0.115
50
20
0.13
60
20
6.5
60
20
3.9
60
20
4.7
60
20
3.9
60
20
3.1
60
20
2.4
60
20
0.5
60
20
0.36
100
20
2.1
100
20
2.2
2.14
2.16
2.14
28
49
604
6.5
12.9
50
79
674
7
14
45
60
1790
-
37.56
45
60
1643
-
33.66
50
75
770 @ 40V
-
17
60
100
1000
15 @ 5V
26
7500 @ 5V
22 @ 25V
-
-
-
-
0.2
10000 @ 5V 45 max @ -25V
-
2.2
1.4
1
2.1
SO-8
a
a
1.8
2.1
Package
40
55
1130
9.4
20.8
110
130
1030
9.5
19.4
55
75
1063 @ 30V
11 @ 5V
20.4
85
125
1021 @ -30V
12.1 @ -5V
24.2
85
120
731 @ 20V
5.2
11.5
150
250
612 @ -20V
4.3
8.9
1700
3000
30 @ 25V
0.3
-
4000
6000
25 @ -25V
0.28
-
230
300
497
-
9.2
235
320
717
-
16.5
SO-8
SO-8
SO-8
SO-8
SO-8
SOT363
SO-8
SO-8
POWERDI3030-8
SOT563
SO-8
DMC4040SSD 40V VDS COMPLEMENTARY DUAL MOSFET
THE DIODES ADVANTAGE
Strong customer relationships and a deep understanding of
their end applications are the primary drivers of the Diodes
product development strategy.
For example, Diodes Incorporated has recently worked with
one of its major customers to develop a 40V complementary
pair to meet the stringent requirements of brushless DC
motor (BLDC) circuits.
The result of this collaboration is the DMC4040SSD.
A 40V VDS complementary dual that features matched RDS(ON),
to ensure motor load losses are balanced and minimized,
and is able to handle continuous currents of 6A and peak start
up currents of up to 5 times continuous.
The DMC4040SSD is suited to use in 24V DC motor system
controlling cooling and extractor fans, pumps, compressors
and printer heads.
More information available in Application Note AN76.
Page 18
The DMC4040SSD features matched RDS(ON) of 25mΩ
ensuring motor load losses are balanced and minimized.
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 19
51V – 99V N-CHANNEL
Part Number
ESD V
DS
Configuration Diode
(Y/N) (V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
Package
DMT6008LFG
Single
a
Yes
a
60
a
12
a
13
a
2.2
7.5
a
11.5
a
-
2713
a
22.4
50.4
a
a
POWERDI3333-8
DMT6010LFG
Single
No
60
20
13
2.2
7.5
11.5
-
2090
19.3
41.3
POWERDI3333-8
DMN6013LFG
Single
No
60
20
10.3
2.1
13
18
-
2577
26.6
55.4
POWERDI3333-8
DMT6016LFDF
Single
No
60
20
8.9
1.9
16
27
-
864
8.4
17
U-DFN2020-6
DMT6016LPS
Single
No
60
20
10.6
2.7
16
24
-
864
8.4
17
POWERDI5060-8
DMT6016LSS
Single
No
60
20
9.2
2.1
18
28
-
864
8.4
17
SO-8
DMN6040SFDE
Single
No
60
20
6.5
2.03
38
47
-
1287 @ 50V
10.4
22.4
U-DFN2020-6 Type E
DMN6040SK3
Single
No
60
20
20 @ Tc
42 @ Tc
40
50
-
1287 @ 25V
10.4
22.4
TO252 (DPAK)
DMN6040SSS
Single
No
60
20
5.5
2
40
55
-
1287 @ 25V
10.4
22.4
SO-8
DMN6040SSD
Dual
No
60
20
5
1.7
40
55
-
1287 @ 25V
10.4
22.4
SO-8
Single
No
60
20
11.8
10.1
40
60
-
1426
15
29
TO252 (DPAK)
a
ZXMN6A09K
ZXMN6A09DN8
a
a
a
a
Dual
No
60
20
5.6
2.1
40
60
-
1407 @ 40V
12.4 @ 5V
24.2
SO-8
ZXMN6A09G
Single
No
60
20
7.5
3.9
40
60
-
1407 @ 40V
12.4 @ 5V
24.2
SOT223
DMN6040SVT
Single
No
60
20
6.3
1.8
44
60
-
1287 @ 25V
10.4
22.4
TSOT26
ZXMN6A25K
Single
No
60
20
10.7
9.85
50
70
-
1063
11
20.4
TO252 (DPAK)
ZXMN6A25G
Single
No
60
20
6.7
3.9
50
70
-
1063
11 @ 5V
20.4
SOT223
ZXMN6A25N8
Single
No
60
20
5.7
2.8
50
70
-
1063
11 @ 5V
20.4
SO-8
Dual
No
60
20
5
2.1
50
70
-
1063
11 @ 5V
20.4
SO-8
Single
No
60
20
5
2.8
66
97
-
502
5.4
10.3
SO-8
DMN6066SSD
Dual
No
60
20
4.4
2.1
66
97
-
502
5.4
10.3
SO-8
DMN6068LK3
Single
No
60
20
8.5
8.5
68
100
-
502
5.55
10.3
TO252 (DPAK)
DMN6068SE
Single
No
60
20
5.6
3.7
68
100
-
502
5.55
10.3
SOT223
DMN6069SE
Single
No
60
20
4.3
2.2
69
100
-
825
7.2
16
SOT223
Dual
No
60
20
3.3
1.5
80
100
-
588
5.6
12.3
SO-8
ZXMN6A08K
Single
No
60
20
7.9
8.94
80
150
-
459 @ 40V
3.8
5.8
TO252 (DPAK)
ZXMN6A08E6
Single
No
60
20
3.5
1.7
80
150
-
459 @ 40V
3.7
5.8
SOT26
ZXMN6A08G
Single
No
60
20
5.3
3.9
80
150
-
459 @ 40V
4 @ 5V
5.8
SOT223
DMN6070SFCL
Single
No
60
20
3
1.8
85
120 @ 5V
-
606 @ 20V
5.6
12.3
X1-DFN1616-6 Type E
DMN6075S
Single
No
60
20
2.5
1.15
85
120
-
606 @ 20V
5.6
12.3
SOT23
Dual
No
60
20
3.2
2.1
120
180
-
330 @ 40V
3 @ 5V
5.7
SO-8
ZXMN6A11G
Single
No
60
20
4.4
3.9
120
180
-
330 @ 40V
3 @ 5V
5.7
SOT223
ZXMN6A11Z
Single
No
60
20
3.6
2.6
120
180
-
330 @ 40V
3 @ 5V
5.7
SOT89
DMN6140L
Single
No
60
20
2.3
1.3
140
170
-
315 @ 40V
4.2 @ 5V
8.6
SOT23
ZXMN6A07Z
Single
No
60
20
2.5
2.6
250
350
-
166 @ 40V
1.65 @ 5V
3.2
SOT89
ZXMN6A07F
Single
No
60
20
1.4
0.806
250
350
-
166 @ 40V
1.65 @ 5V
3.2
SOT23
ZVN4306GV
Single
No
60
20
2.1
3
330
450 @ 5V
-
350 max @ 25V
-
-
SOT223
ZVN4306AV
Single
No
60
20
1.1
0.85
330
450 @ 5V
-
350 max @ 25V
-
-
E-Line
ZVN4306G
Single
No
60
20
2.1
3
330
450 @ 5V
-
350 max @ 25V
-
-
SOT223
ZVN4306A
Single
No
60
20
1.1
1.1
330
450 @ 5V
-
350 max @ 25V
-
-
E-Line
ZVN4206G
Single
No
60
20
1
2
1000
1500 @ 5V
-
100 max @ 25V
-
-
SOT223
ZVN4206GV
Single
No
60
20
1
2
1000
1500 @ 5V
-
100 max @ 25V
-
-
SOT223
ZVN4206A
Single
No
60
20
0.6
0.7
1000
1500 @ 5V
-
100 max @ 25V
-
-
E-Line
ZVN4206AV
Single
No
60
20
0.6
0.7
1000
1500 @ 5V
-
100 max @ 25V
-
-
E-Line
DMG1026UV
Dual
Yes
60
20
0.44
0.65
1800
2100
-
32 @ 25V
0.45
-
SOT563
DMN62D1SFB
Single
Yes
60
20
0.41
0.47
1400
1600
-
40 @ 40V
0.73
1.39
X1-DFN1006-3
DMN62D0LFB
Single
Yes
60
20
0.1
0.47
-
32 @ 25V
0.45
-
X1-DFN1006-3
DMN62D0LFD
Single
Yes
60
20
0.31
0.48
-
2000 @ 4V 2500
31 @ 25V
0.5
-
X1-DFN1212-3
DMN62D1LFD
Single
Yes
60
20
0.4
0.5
-
2000 @ 4V 2500
36 @ 25V
0.55
-
X1-DFN1212-3
DMN62D0SFD
Single
Yes
60
20
0.63
0.89
2000
3000 @ 5V
-
30.2 @ 25V
0.39
0.87
X1-DFN1212-3
ZVN2106A
Single
No
60
20
0.45
0.7
2000
-
-
75 max @ 18V
-
-
E-Line
ZVN2106G
Single
No
60
20
0.71
2
2000
-
-
75 max @ 18V
-
-
SOT223
ZXMN6A25DN8
DMN6066SSS
DMN6070SSD
ZXMN6A11DN8
2000 @ 4V 2500
Page 19
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 20
51V – 99V N-CHANNEL (CONTINUED)
Part Number
ESD V
DS
Configuration Diode
(Y/N) (V)
VGS
(±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
PD (W)
@TA=25°C @TA=25°C
10V
4.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
2.5V
Package
ZVN4106F
Single
a
No
60
a
20
0.2
0.35
a
2500
5000 @ 5V
a
35 max @ 25V
a
-
a
SOT23
DMN601TK
Single
Yes
60
20
0.3
0.15
2000
3000 @ 5V
-
50 max @ 50V
-
-
SOT523
DMN601WK
Single
Yes
60
20
0.3
0.2
2000
3000
-
50 max @ 25V
-
-
SOT323
DMN601VK
Dual
Yes
60
20
0.305
0.25
2000
3000
-
50 max @ 25V
-
-
SOT563
SOT363
a
DMN601DWK
a
a
a
a
a
a
a
a
Dual
Yes
60
20
0.305
0.2
2000
3000 @ 5V
-
50 max @ 25V
-
-
Single
Yes
60
20
0.3
0.35
2000
3000 @ 5V
-
50 max @ 25V
-
-
DMN601DMK
Dual
Yes
60
20
0.51
0.98
2400
4000 @ 5V
-
30 @ 25V
304
DMN65D8LFB
Single
Yes
60
20
0.26
0.43
3000
4000
-
25 @ 25V
-
-
DMN65D8L
Single
Yes
60
20
0.31
0.37
3000
4000 @ 5V
-
22 @ 25V
0.43
0.87
SOT23
DMN65D8LW
Single
Yes
60
20
0.3
0.43
3000
4000 @ 5V
-
22 @ 25V
0.43
0.87
SOT323
DMN66D0LW
Single
Yes
60
20
0.115
0.2
5000
6000 @ 5V
-
23 @ 25V
-
-
SOT323
Dual
Yes
60
20
0.115
0.25
5000
6000 @ 5V
-
23 @ 25V
-
-
SOT363
Single
Yes
60
20
0.115
0.2
5000
6000 @ 5V
-
23 @ 25V
-
-
SOT523
Dual
Yes
60
20
0.2
0.4
6000
8000
-
22 @ 25V
0.43
0.87
SOT363
ZVN3306A
Single
No
60
20
0.27
0.625
5000
-
-
35 max @ 18V
-
-
E-Line
ZVN3306F
Single
No
60
20
0.15
0.33
5000
-
-
35 max @ 18V
-
-
SOT23
BS170F
Single
No
60
20
0.15
0.33
5000
-
-
60 @ 10V
-
-
SOT23
MMBF170
Single
No
60
20
0.5
0.3
5000
5300
-
22 @ 10V
-
-
SOT23
VN10LF
Single
No
60
20
0.15
0.33
5000
7500 @ 5V
-
60
-
-
SOT23
VN10LP
Single
No
60
20
0.27
0.625
5000
7500 @ 5V
-
60 max @ 25V
-
-
E-Line
BS870
Single
No
60
20
0.25
0.3
5000
-
-
22 @ 25V
-
-
SOT23
2N7002K
Single
Yes
60
20
0.38
0.54
2000
3000 @ 5V
-
30 @ 25V
0.3
-
SOT23
2N7002E
Single
No
60
20
0.25
0.37
3000
4000
-
22 @ 25V
223
-
SOT23
2N7002A
Single
Yes
60
20
0.18
0.37
5000
6000 @ 5V
-
23 @ 25V
-
-
SOT23
DMN601K
DMN66D0LDW
DMN66D0LT
DMN65D8LDW
2N7002DWA
SOT23
SOT26
X1-DFN1006-3
Dual
Yes
60
20
0.2
0.4
6000
8000
-
22 @ 25V
0.43
0.87
SOT363
2N7002W
Single
No
60
20
0.115
0.2
13500
7500 @ 5V
-
22 @ 25V
-
-
SOT323
2N7002
Single
No
60
20
0.21
0.54
13500
7500 @ 5V
-
22 @ 25V
223
-
SOT23
Dual
No
60
20
0.23
0.4
13500
7500 @ 5V
-
22 @ 25V
-
-
SOT363
2N7002DW
2N7002T
2N7002VAC
2N7002VC
Single
No
60
20
0.115
0.15
13500
7500 @ 5V
-
22 @ 25V
-
-
SOT523
Dual
No
60
20
0.28
0.15
13500
7500 @ 5V
-
50 max @ 25V
-
-
SOT563
SOT563
Dual
No
60
20
0.28
0.15
13500
7500 @ 5V
-
50 max @ 25V
-
-
ZXMN7A11G
Single
No
70
20
3.8
3.9
13
19
-
298 @ 40V
4.35 @ 5V
7.4
SOT223
ZXMN7A11K
Single
No
70
20
6.1
8.5
13
19
-
298 @ 40V
4.35 @ 5V
7.4
TO252 (DPAK)
DMN7022LFG
Single
No
75
20
10.5
2
22
28
-
2737 @ 35V
26.4
56.5
POWERDI3333-8
DMT8012LFG
Single
No
80
20
9.5
2.2
16
22 @ 6V
-
1949
15
34
POWERDI3333-8
DMT8012LK3
Single
No
80
20
10.5
2.6
16
21
1949
15
34
TO252 (DPAK)
60V MOSFET BOOSTS POWER DENSITY
THE DIODES ADVANTAGE
The DMN6070SFCL is the world’s smallest 60V N-channel MOSFET with
a sub-100mΩ on-resistance.
Small footprint and low profile
Packaged in a DFN1616 with a footprint measuring 1.6mm x
1.6mm and a typical off-board height of only 0.5mm.
Low on-resistance
With a typical RDS(ON) of 74mΩ at VGS of 4V to minimize conduction
losses and raise overall power efficiency.
Page 20
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 21
51V – 99V P-CHANNEL
Part Number
Configuration
ESD
Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
PD (W)
@TA=25°C @TA=25°C
RDS(ON) (mΩ max)
at VGS=
10V
4.5V
2.5V
CISS typ @
VGS = ½VDSS
(pF)
QG typ @
VGS = 4.5V
(nC)
QG typ @
VGS = 10V
(nC)
Package
DMP6023LFG
Single
No
a
60
20
7.7
2.1
a
25
a
33
a
2569
a
26.5
53.1
a
POWERDI3333-8
DMP6023LSS
Single
No
60
20
6.6
1.6
25
33
-
2569
26.5
53.1
SO-8
DMP6023LE
Single
No
60
20
7.4
2
28
35
-
2569
26.5
53.1
SOT223
Dual
No
60
20
4.8
1.7
55
70
-
1293
11.9
24
SO-8
ZXMP6A18K
Single
No
60
20
10.4
10.1
55
80
-
1580
23 @ -5V
44
TO252 (DPAK)
ZXMP6A16K
Single
No
60
20
8.2
9.76
85
125
-
1021
12.1 @ -5V
24.2
TO252 (DPAK)
DMP6110SSD
Dual
No
60
20
4.5
1.7
105
130
-
969
8.2
17.2
SO-8
DMP6110SSS
Single
No
60
20
4.5
1.5
110
130
-
1030
9.5
19.4
SO-8
DMP6180SK3
Single
No
60
20
10
2.7
110
140
-
984.7
8.1
17.1
TO252 (DPAK)
a
DMP6050SSD
ZXMP6A17DN8
a
a
a
a
a
a
a
a
Dual
No
60
20
3.4
2.15
125
190
-
637
9
17.7
SO-8
ZXMP6A17E6
Single
No
60
20
3
1.9
125
190
-
637
9.8
17.7
SOT26
ZXMP6A17G
Single
No
60
20
4.3
3.9
125
190
-
637
9
17.7
SOT223
DMP6185SK3
Single
No
60
20
9.4
2.7
150
185
-
708
6.2
14
TO252 (DPAK)
DMP6185SE
Single
No
60
20
3
2.2
150
185
-
708
6.2
14
SOT223
DMP6250SE
Single
No
60
20
2.1
1.8
250
300
-
551
4.8
9.7
SOT223
ZXMP6A13G
Single
No
60
20
2.3
3.9
390
595
-
219
2.9
5.9
SOT223
ZXMP6A13F
Single
No
60
20
1.1
0.806
400
600
-
219
2.9
5.9
SOT23
ZVP2106A
Single
No
60
20
0.28
0.7
5000
-
-
100
-
-
E-Line
ZVP2106G
Single
No
60
20
0.45
2
5000
-
-
100
-
-
SOT223
ZVP3306A
Single
No
60
20
0.16
0.625
14000
-
-
50
-
-
E-Line
ZVP3306F
Single
No
60
20
0.09
0.33
14000
-
-
50
-
-
SOT23
ZXMP7A17G
Single
No
70
20
3.7
3.9
160
250
-
635
9.6
18
SOT223
ZXMP7A17K
Single
No
70
20
5.7
9.25
160
250
-
635
9.6
18
TO252 (DPAK)
MOSFET PORTFOLIO OPTIMIZED FOR VOIP
THE DIODES ADVANTAGE
High pulse current (IDM)
With high IDM handling capabilities, the MOSFETs can drive
the transformer to deliver the required RING and TIP currents.
Avalanche rugged
These MOSFETs have been designed to withstand the highpulse avalanche energy that will be induced by the transformer
during switching transition.
Low gate charge (QG) and input capacitance (CISS)
This simplifies the SLIC design and reduces component
count and cost. These MOSFETs are capable of being driven at
low logic-level voltages.
Did you know? Diodes Incorporated provides the designers
of Voice over Internet Protocol (VoIP) communication
equipment with a range of rugged MOSFETs that
significantly reduces circuit complexity and cost. For
example, DMN60xx series are designed to handle the highpulse current needed to generate tip and ring linefeeds
and to withstand the avalanche energy induced during
switching. This meets the stringent requirements of
primary switch position in transformer based Subscriber
Line Interface Circuits (SLIC) DC/DC converters.
VDC
DC-DC CONVERTER
TIP
VBAT
SLIC
CONTROLLER
LINEFEED
CIRUITRY
VTR
TWISTED
PAIR TO
PHONE
RING
Diodes Incorporated also offers PNP transistors suitable
for this application, e.g. the FZT953, FZT955.
Page 21
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 22
100V PLUS N-CHANNEL
Part Number
ESD V
IDS (A)
PD (W)
V
Configuration Diode DS GS
(Y/N) (V) (±V) @T =25°C @T =25°C 10V
A
A
RDS(ON) (mΩ max)
at VGS=
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
Package
DMN10H099SFG
Single
No
100
a
20
a
4.2
a
2.31
a
80
a
99 @ 6V
a
a
1127
a
12.2
25.2
a
POWERDI3333-8
DMN10H099SK3
Single
No
100
20
17
-
80
99 @ 6V
-
1172
12.2
25.2
TO252 (DPAK)
ZXMN10A09K
Single
No
100
20
7.7
10.1
85
100 @ 6V
-
1313
17.2 @ 6V
26
TO252 (DPAK)
DMN10H120SFG
Single
No
100
20
3.8
2.4
110
122 @ 6V
-
549
5.2
10.6
POWERDI3333-8
DMN10H170SFG
Single
No
100
20
2.9
2
122
133
-
870.7 @ 25V
7
14.9
POWERDI3333-8
ZXMN10A25G
Single
No
100
20
4
3.9
125
150 @ 6V
-
859
9.6 @ 5V
17
SOT223
ZXMN10A25K
Single
No
100
20
6.4
9.85
125
150 @ 6V
-
859
9.6 @ 5V
17
TO252 (DPAK)
DMN10H170SK3
Single
No
100
20
12
42
140
160
-
1167 @ 25V
4.9
9.7
TO252 (DPAK)
DMN10H220L
Single
No
100
16
1.6
1.3
220
250
-
401 @ 25V
4.1
8.3
SOT23
DMN10H220LE
Single
No
100
20
2.3
1.8
220
250
-
401 @ 25V
4.1
8.3
SOT223
ZXMN10B08E6
Single
No
100
20
1.9
1.7
230
300
-
497
5 @ 5V
9.2
SOT26
Dual
No
100
20
2.1
1.8
250
300 @ 6V
-
405
4.2 @ 5V
7.7
SO-8
ZXMN10A08E6
Single
No
100
20
1.9
1.7
250
300 @ 6V
-
405
4.2 @ 5V
7.7
SOT26
ZXMN10A08G
Single
No
100
20
2.9
3.9
250
300 @ 6V
-
405
4.2 @ 5V
7.7
SOT223
ZXMN10A11G
Single
No
100
20
2.4
3.9
350
450 @ 6V
-
274
3.5 @ 5V
5.4
SOT223
ZXMN10A11K
Single
No
100
20
3.5
8.5
350
450 @ 6V
-
274
3.5 @ 5V
5.4
TO252 (DPAK)
ZVN4310A
Single
No
100
20
0.9
0.85
500
650 @ 6V
-
350 max @ 25V
-
-
E-Line
ZVN4310G
Single
No
100
20
1.67
3
540
750 @ 6V
-
350 max @ 25V
-
-
SOT223
ZXMN10A07F
Single
No
100
20
0.8
0.625
700
900 @ 6V
-
138
-
2.9
SOT23
ZXMN10A07Z
Single
No
100
20
1.4
2.6
700
900 @ 6V
-
138
-
2.9
SOT89-3L
ZVN4210A
Single
No
100
20
0.45
0.7
1500
1800 @ 5V
-
100 max @ 25V
-
-
E-Line
ZVN4210G
Single
No
100
20
0.8
2
1500
1800 @ 5V
-
100 max @ 25V
-
-
SOT223
ZVNL110A
Single
No
100
20
0.32
0.7
3000 4500 @ 5V
-
75 max @ 25V
-
-
E-Line
ZVNL110G
Single
No
100
20
0.6
2
3000 4500 @ 5V
-
75 max @ 25V
-
1.8
SOT223
ZVN2110A
Single
No
100
20
0.32
0.7
4000
-
-
75 max @ 25V
-
-
E-Line
ZVN2110G
Single
No
100
20
0.5
2
4000
-
-
59 @ 25V
-
-
SOT223
BSS123
Single
No
100
20
0.17
0.3
6000
10000
-
29 @ 25V
-
-
SOT23
BSS123W
Single
No
100
20
0.17
0.2
6000
10000
-
29 @ 25V
-
-
SOT323
ZVN3310A
Single
No
100
20
0.2
0.625
10000
-
-
40 max @ 25V
-
-
E-Line
ZVN3310F
Single
No
100
20
0.1
0.33
10000
-
-
40 max @ 25V
-
-
SOT23
ZXMN15A27K
Single
No
150
25
2.6
9.5
650
-
-
169 @ 25V
-
6.6
TO252 (DPAK)
ZXMN20B28K
Single
No
200 20
2.3
10.2
750
780 @ 5V
-
358 @ 25V
8.1 @ 5V
ZVN2120G
Single
No
200 20
0.32
2
10000
-
-
85 max @ 25V
-
-
SOT223
ZVN3320F
Single
No
200 20
0.06
0.33
25000
-
-
45 max @ 25V
-
-
SOT23
ZVNL120A
Single
No
200 20
0.18
0.7
-
10000 @ 5V 10000 @ 3V
85 max @ 25V
-
-
E-Line
ZVNL120G
Single
No
200 20
0.32
2
-
10000 @ 5V 10000 @ 3V
85 max @ 25V
-
-
SOT223
BS107P
Single
No
200 20
0.12
0.5
-
30000 @ 5V 23000 @ 2.6V
-
-
2.7
E-Line
ZVN4424A
Single
No
240
40
0.26
0.75
5500
-
6000
110 @ 25V
-
-
E-Line
ZVN4424G
Single
No
240
40
0.5
2.5
5500
-
6000
110 @ 25V
-
-
SOT223
DMN24H11DS
Single
No
240
20
0.27
1.2
11000
12000
-
76.8 @ 25V
-
3.7
SOT23
ZVN0124A
Single
No
240
20
0.16
0.7
16000
-
-
85 max @ 25V
-
-
E-Line
ZVN4525E6
Single
No
250
40
0.23
1.1
8500
9000
9500
72 @ 25V
-
2.6
SOT26
ZVN4525G
Single
No
250
40
0.31
2
8500
9000
9500
72 @ 25V
-
2.6
SOT223
ZVN4525Z
Single
No
250
40
0.24
1.2
8500
9000
9500
72 @ 25V
-
2.6
SOT89-3L
DMN30H4D0L
Single
No
300 20
0.25
0.47
4000
4000
-
187.3 @ 25V
-
7.6
SOT23
DMN30H4D0LFDE
Single
No
300 20
0.55
1.98
4000
4000
-
187.3 @ 25V
-
7.6
U-DFN2020-6 Type E
DMN30H14DLY
Single
No
300 20
0.21
2.2
14000
20000
-
96 @ 25V
-
4
SOT89
ZVN0540A
Single
No
400 20
0.09
0.7
50000
-
-
70 max @ 25V
-
-
E-Line
Dual
No
450
0.5
1.64
4000
-
-
256 @ 25V
-
6.9
SO-8
a
ZXMN10A08DN8
DMGD7N45SSD
Page 22
a
a
30
a
a
a
TO252 (DPAK)
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:32 Page 23
100V PLUS N-CHANNEL (CONTINUED)
Part Number
RDS(ON) (mΩ max)
at VGS=
ESD V
IDS (A)
PD (W)
V
Configuration Diode DS GS
(Y/N) (V) (±V) @T =25°C @T =25°C
A
A
10V
4.5V
2.5V
CISS typ @ QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
ZVN0545A
Single
No
450
a
20
a
0.09
a
0.7
a
50000
a
a
a
70 max @ 25V
ZVN0545G
Single
No
450
20
0.14
2
50000
-
-
70 max @ 25V
ZXMN0545G4
Single
No
450
20
0.14
2
50000
-
-
70 max @ 25V
BSS127S
Single
No
600 20
0.07
1.25
160000 19000 @ 5V
-
BSS127SSN
Single
No
600 20
0.07
1.25
160000 19000 @ 5V
DMG9N65CT
Single
No
650
30
9
165
1300
DMG9N65CTI
Single
No
650
30
9
13
1300
DMG4N65CT
Single
No
650
30
4
2.19
DMG4N65CTI
Single
No
650
30
4
8.53
DMJ7N70SK3
Single
No
700 30
3.9
28
1250
a
a
a
-
a
E-Line
-
-
SOT223
-
-
SOT223
21.8 @ 25V
-
1.08
SOT23
-
21.8 @ 25V
-
1.08
SC59
-
-
2310 @ 25V
-
39
TO220AB
-
-
2310 @ 25V
-
39
ITO-220AB
3000
-
-
900 @ 25V
-
13.5
TO220-3
3000
-
-
900 @ 25V
-
13.5
ITO-220AB
-
-
351 @ 50V
-
14
TO252 (DPAK)
a
a
-
Package
a
a
100V PLUS P-CHANNEL
Part Number
ESD
Configuration Diode
(Y/N)
VDS
(V)
VGS
(±V)
IDS (A)
RDS(ON) (mΩ max)
at VGS=
PD (W)
@TA=25°C @TA=25°C
10V
4.5V
2.5V
CISS typ @
QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(pF)
(nC)
(nC)
Package
ZXMP10A18G
Single
No
100
20
3.7
a
3.9
150
a
190 @ 6V
a
a
1055
a
-
26.9
a
a
SOT223
ZXMP10A18K
Single
No
100
20
5.9
10.2
150
190 @ 6V
-
1055
-
26.9
TO252 (DPAK)
ZXMP10A16K
Single
No
100
20
4.6
9.76
235
285 @ 6V
-
717
-
16.5
TO252 (DPAK)
DMP10H400SK3
Single
No
100
20
9
42
240
300
-
1239 @ 25V
8.4
17.5
TO252 (DPAK)
ZXMP10A17E6
Single
No
100
20
1.6
1.7
350
450 @ -6V
-
424
7.1 @- 6V
10.7
SOT26
ZXMP10A17G
Single
No
100
20
2.4
3.9
350
450 @ -6V
-
424
7.1 @- 6V
10.7
SOT223
ZXMP10A17K
Single
No
100
20
3.9
10.2
350
450 @ -6V
-
424
7.1 @- 6V
10.7
TO252 (DPAK)
ZXMP10A13F
Single
No
100
20
0.7
0.806
1000
1450 @ -6V
-
141
1.8 @ 5V
3.5
SOT23
ZVP2110A
Single
No
100
20
0.23
0.7
8000
-
-
100 max @ 25V
-
-
E-Line
ZVP2110G
Single
No
100
20
0.31
2
8000
-
-
100 max @ 25V
-
-
SOT223
ZVP3310A
Single
No
100
20
0.14
0.625
20000
-
-
50 max @ 25V
-
-
E-Line
ZVP3310F
Single
No
100
20
0.075
0.33
20000
-
-
50 max @ 25V
-
-
SOT23
ZVP2120A
Single
No
200
20
0.12
0.7
25000
-
-
100 max @ 25V
-
-
E-Line
ZVP2120G
Single
No
200
20
0.2
2
25000
-
-
100 max @ 25V
-
-
SOT223
ZXMP2120G4
Single
No
200
20
0.2
2
25000
-
-
100 max @ 25V
-
-
SOT223
ZXMP2120E5
Single
No
200
20
0.122
0.75
28000
-
-
100 max @ 25V
-
-
SOT25
ZXMP2120FF
Single
No
200
20
0.137
1
28000
-
-
100 max @ 25V
-
-
SOT23F
ZVP1320F
Single
No
200
20
0.035
0.35
80000
-
-
50 max @ 25V
-
-
SOT23
ZVP4424A
Single
No
240
40
0.2
0.75
9000
-
11000 @ 3.5V 100 max @ 25V
-
-
E-Line
ZVP4424G
Single
No
240
40
0.48
2.5
9000
-
11000 @ 3.5V 100 max @ 25V
-
-
SOT223
ZVP4424Z
Single
No
240
40
0.2
1.5
9000
-
11000 @ 3.5V 100 max @ 25V
-
-
SOT89-3L
ZVP4525E6
Single
No
250
40
0.197
1.1
14000
-
18000 @ 3.5V
73 @ 25V
-
2.45
SOT26
ZVP4525G
Single
No
250
40
0.265
2
14000
-
18000 @ 3.5V
73 @ 25V
-
2.45
SOT223
ZVP4525Z
Single
No
250
40
0.205
1.2
14000
-
18000 @ 3.5V
73 @ 25V
-
2.45
SOT89-3L
ZVP0545A
Single
No
450
20
0.045
0.7
150000
-
-
120 max @ 25V
-
-
E-Line
ZVP0545G
Single
No
450
20
0.075
2
150000
-
-
120 max @ 25V
-
-
SOT223
a
a
a
a
a
a
a
a
Page 23
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 24
PROTECTED MOSFETS (IntelliFET)
Part Number
Configuration
TAB
BVDSS
(V)
RDS(ON) (mΩ max)
at VGS =
ID (A)
PD (W)
VIN=5V
@TA=+25°C
3V
5V
10V
VDS(S/C)
5V
EAS (mJ)
Tj (ºC)
Package
ZXMS6006DG
Single
Drain
60
a
2.8
3
125
a
100
a
a
36
a
490
a
150
a
SOT223
ZXMS6006DT8
Dual
N/A
60
-
2.1
125
100
-
36
210
150
SM-8
ZXMS6006SG
Single
Source
60
2.8
3
125
100
-
36
490
150
SOT223
ZXMS6005DG
Single
Drain
60
2
3
250
200
-
24
490
150
SOT223
ZXMS6005DT8
Dual
N/A
60
1.8
2.13
250
200
-
24
210
150
SM-8
ZXMS6005SG
Single
Source
60
2
1.6
250
200
-
24
480
150
SOT223
ZXMS6004DG
Single
Drain
60
1.3
3
600
500
-
36
490
150
SOT223
ZXMS6004DT8
Dual
N/A
60
1.2
2.13
600
500
-
36
210
150
SM-8
a
a
a
a
a
a
a
ZXMS6004FF
Single
N/A
60
1.3
1.5
600
500
-
36
90
150
SOT23F
ZXMS6004SG
Single
Source
60
1.3
1.6
600
500
-
36
480
150
SOT223
BSP75G
Single
Drain
60
1.4
2.5
-
675
550
36
550
150
SOT223
BSP75N
Single
Source
60
1.2
1.5
-
675
550
36
550
150
SOT223
ZXMS6001N3
Single
Source
60
1.1
1.5
2000
675
-
36
550
150
SOT223
ZXMS6002G
Single
Drain
60
1.4
2.5
-
675
550
36
550
150
SOT223
ZXMS6003G
Single
Drain
60
1.4
2.5
-
675
550
36
550
150
SOT223
SOT23 FLAT PCB Footprint
7.5mm2
SOT223 PCB Footprint
49.5mm2
PROBABLY THE SMALLEST
SELF-PROTECTED MOSFET
THE DIODES ADVANTAGE
IntelliFETs are low-side 60V N-channel MOSFETs with
integrated self-protection features.
Moving to the ZXMS6004FF
reduces the board area by
a factor of 6.5 yet maintains the
functionalist and power dissipation
Did you know? The IntelliFET® series of low-side 60V
N-channel MOSFETs feature over-current, over-voltage,
over-temperature and ESD protection that enables
circuit designers to increase system reliability.
The ZXM6004FF is probably the smallest self-protected
MOSFET that is ideally suited for switching inductive
loads, such as motors, relays and lamps at low
frequencies.
Packaged in the thermal efficient and compact SOT23
flat (SOT23F), this takes 85% less board space than
7.3mm x 6.7mm footprint SOT223 packaged parts.
The small footprint of ZXMS6004FF opens new
applications such as sensors where PCB constraints had
previously prevented the use of self-protected MOSFETs.
Self-protected MOSFETs
IntelliFET portfolio feature over-current, over-voltage, overtemperature and ESD protection that increase system reliability.
Logic-level input
IntelliFETs can be driven directly from microcontrollers with
logic level signals from 3.3V to 5V.
ZXMS6004FF in SOT23F
Providing power density three times that of equivalent SOT223
solutions, the ZXMS6004FF saves on board space having an
equivalent footprint to standard SOT23.
Dual IntelliFETs in SM8
Co-packaging two IntelliFETs as independent and isolated
switches enables one dual SM8 to replace two SOT223 while
delivering the same thermal performance and reducing
PCB area.
Automotive AEC-Q101
Fully meets AEC-Q101 standard for high reliability, making
IntelliFETs well-suited for operation in harsh environments.
IntelliFET is a registered trademark of Diodes Incorporated.
Page 24
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 25
H-BRIDGE
Part Number
DMHC3025LSD
a
ESD V
IDS (A)
PD (W)
VGS
Configuration Type Diode DS
(Y/N) (V) (±V) @T =+25°C @T =+25°C
A
A
H-bridge
2*N
a
No
ZXMHC3F381N8
H-bridge
2*N
No
2*P
ZXMHC3A01T8
H-bridge
2*N
No
2*P
ZXMHC3A01N8
H-bridge
2*N
No
2*P
DMHC4035LSD
H-bridge
2*N
No
2*P
ZXMHC6A07N8
H-bridge
2*N
No
2*P
ZXMHC6A07T8
H-bridge
2*N
No
2*P
ZXMHN6A07T8
ZXMHC10A07N8
H-bridge
H-bridge
4*N
2*N
No
No
2*P
ZXMHC10A07T8
H-bridge
30
a
20
a
6
30
20
4.2
30
20
5
30
20
4.1
30
20
3.1
30
20
2.3
30
20
2.7
30
20
2.1
40
20
4.5
40
20
3.7
60
20
1.8
60
20
1.4
60
20
1.8
60
20
1.5
a
a
2*P
2*N
2*P
No
1.5
RDS(ON) Max(mΩ)
at VGS=
10V
4.5V
CISS typ @
QG typ @ QG typ @
VGS = ½VDSS VGS = 4.5V VGS = 10V
(nC)
(nC)
(pF)
25
a
40
a
590
a
5.4
11.7
50
80
631
5.5
11.4
a
a
a
60
20
1.6
100
20
1
100
20
0.9
100
20
1.1
100
20
0.9
1.35
1.7
1.36
1.5
1.36
1.7
1.4
1.36
1.3
Package
a
SO-8
a
33
60
430
-
9 @ 15V
55
80
670
-
12.7 @ 15V
120
180
190 @ 25V
-
3.9
210
330
204 @ 15V
-
5.2
125
180
190 @ 25V
-
3.9
210
330
204 @ 15V
-
5.2
45
58
574
5.9
12.5
65
100
587
5.4
11.1
250
350
166 @ 40V
-
3.2
400
600
141 @ 50V
-
5.1
300
450
166 @ 40V
1.65 @ 5V
3.2
425
630
233 @ 30V
2.4 @ 5V
5.1
300
450
166 @ 40V
-
3.2
700
900 @ 6V
138 @ 60V
-
2.9
1000
1450 @ 6V
141 @ 50V
-
3.5
700
900 @ 6V
138 @ 60V
-
2.9
1000
1450 @ 6V
141 @ 50V
-
3.5
SO-8
SM-8
SO-8
SO-8
SO-8
SM-8
SM-8
SO-8
SM-8
MOSFET H-BRIDGES REDUCE
FOOTPRINT BY 50%
THE DIODES ADVANTAGE
Reduce footprint
Using single SO-8 package, with 5mm x 6mm footprint, these
H-bridges can save PCB space, reduce component count and
assembly costs.
Low RDS(ON)
<50mΩ minimizes conduction losses enabling the H-bridges to
tolerate high continuous current under motor stall conditions.
Did you know? Packaging dual N-channel and dual
P-channel MOSFETs in an SO-8 package, Diodes
Incorporated has provided a unique solution that enables
designers to reduce the PCB space and component count
required by low power, full H-bridge applications.
In just a single SO-8, with 5mm x 6mm footprint, these
H-bridges can replace the equivalent four SOT23 or two
SO-8 in space limited single-phase brush and brushless
motor driving, inductive wireless charging circuits, CCFL
inverters and driving solenoids in relays.
The H-bridges’ space-saving advantage is complemented
by the low RDS(ON) performance of the MOSFETs, typically
45mΩ at 10V VGS and 65mΩ at -10V VGS respectively for
the 40V N-channel and P-channel devices. The minimal
conduction losses resulting from the low on resistance
mean the H-bridge is able to tolerate higher continuous
current under motor stall conditions.
High pulsed current
30A peak pulse capability allows for a high in-rush current to
be drawn safely during the start-up of the inductive load.
Max drain voltage
40V and 30V VDSS provides sufficient headroom for the
intended 24V and 12V VCC rail voltages.
Typical 12V full
H-bridge driving a
brushed DC motor
Page 25
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 26
HIGH TEMPERATURE AUTOMOTIVE 'Q' MOSFETS
RDS(ON) max
(mΩ)
QGT Typ
Typ CISS
(pf)
@25VDSS
EAR
(mJ)
IAR
(A)
Tj max
Package
Availability
69
a
3750
a
200
45
175
TO252 (DPAK)
a
a
Q4 2015*
3.6
83
4450
120
30
175
TO252 (DPAK)
Q4 2015*
2.7
-
60.1
3714
200
45
175
POWERDI5060-8
Q4 2015*
2–4
5
-
54
2492
260
70
175
TO252 (DPAK)
Q4 2015*
2–4
5
-
54
2492
260
70
175
POWERDI5060-8
Q4 2015*
100
1–3
6.5
9.8
41
2090
64
20
175
POWERDI5060-8
Q4 2015*
50
1–3
7.5
11.5
41
2090
64
20
175
TO252 (DPAK)
Q4 2015*
-
2–4
8.6
-
41
2026
89
24
175
POWERDI5060-8
Q4 2015*
50
2–4
10
-
25.5
1374
170
18
175
TO252 (DPAK)
Q4 2015*
20
2–4
10
-
25.5
1374
170
18
175
POWERDI5060-8
Q4 2015*
100
2–3
2.4
-
TBC
TBC
TBC
TBC
175
TO252 (DPAK)
Q4 2015*
20
95
2–4
3.1
-
68.7
4221
200
45
175
POWERDI5060-8
Q4 2015*
20
100
2–4
3.4
-
70.3
4221
200
45
175
TO252 (DPAK)
Q4 2015*
60
20
95
2–4
3.8
-
70.3
4221
200
45
175
TO252 (DPAK)
Q4 2015*
N
60
20
80
1–3
4.8
8.2
37
6300
68
90
175
TO252 (DPAK)
Q4 2015*
DMTH6005LPSQ
N
60
20
80
1–3
4.8
8.2
37
6300
68
90
175
POWERDI5060-8
Q4 2015*
DMNH6008SPSQ
N
60
20
50
2–4
8
-
75.4
3290
300
26
175
POWERDI5060-8
Q4 2015*
DMTH6010LK3Q
N
60
20
50
1–3
8
12
41.3
2090
64
20
175
TO252 (DPAK)
Q4 2015*
DMTH6010SPSQ
N
60
20
20
1–3
8
12
41.3
2090
64
20
175
POWERDI5060-8
Q4 2015*
DMNH6012SPSQ
N
60
20
20
2–4
11
-
48.5
2221
168
58
175
POWERDI5060-8
Q4 2015*
DMNH6012LK3Q
N
60
20
50
1–3
12
18
48.5
2221
168
58
175
TO252 (DPAK)
Q4 2015*
DMNH6021SPDQ
N
60
20
40
1–3
23
28
19.7
1030
68
37
175
POWERDI5060-8
Q4 2015*
DMNH6021SK3Q
N
60
20
40
1–3
23
28
19.7
1030
68
37
175
TO252 (DPAK)
Q4 2015*
DMNH6022SSDQ
N
60
20
16
1–3
23
28
19.7
1030
68
37
175
SO-8
Q4 2015*
DMNH6042SPDQ
N
60
20
7
1–3
50
65
15.6
700
106
5
175
POWERDI5060-8
Q4 2015*
DMNH6042SSDQ
N
60
20
18
1–3
50
65
15.6
700
106
5
175
SO-8
Q4 2015*
DMNH6042SK3Q
N
60
20
18
1–3
50
65
15.6
700
106
5
175
TO252 (DPAK)
Q4 2015*
DMNH10H014LPSQ
N
100
20
TBC
2–4
14
24
50
3000
TBC
TBC
175
POWERDI5060-8
Q4 2015*
DMNH10H014LK3Q
N
100
20
TBC
2–4
14
24
50
3000
TBC
TBC
175
TO252 (DPAK)
Q4 2015*
DMNH10H028SPSQ
N
100
20
50
1.2 – 2.2
26
32
20
1500
102
44
175
POWERDI5060-8
Q4 2015*
DMNH10H028SK3Q
N
100
20
50
1.2 – 2.2
26
32
20
1500
102
44
175
TO252 (DPAK)
Q4 2015*
DMPH3010LK3Q
P
-30
20
-17.5
-1 – 2.2
7.5
10
126
6234
292
-24
175
TO252 (DPAK)
Q4 2015*
DMPH4015LSSQ
P
-40
20
-20
-1 – 2.3
11
15
91
4234
58
-34
175
SO-8
Q4 2015*
DMPH4013LSSQ
P
-40
20
-10
-1 – 2.4
13
18
-
3428
58
-34
175
SO-8
Q4 2015*
DMPH4023LSSQ
P
-40
20
-50
-1 – 2.5
22
30
TBC
TBC
TBC
TBC
175
SO-8
Q4 2015*
DMPH6050SFGQ
P
-60
20
-17
-1 – 3
24
50
70
1293
31
-24
175
PowerDI3333-8
Q4 2015*
DMPH6050SK3Q
P
-60
20
-17
-1 – 3
24
50
70
1293
31
-24
175
TO252 (DPAK)
Q4 2015*
Polarity
VDS
(V)
VGSS
(V)
ID
(A)
VGSTH
(V)
DMTH4004SCTBQ
N
40
a
20
a
100
2–4
a
3.4
a
a
DMTH4004LK3Q
N
40
20
100
2–4
2.5
DMTH4004SPSQ
N
40
20
100
2–4
DMNH4006LK3Q
N
40
20
80
DMNH4006LPSQ
N
40
20
80
DMTH4007LPSQ
N
40
20
DMTH4007LK3Q
N
40
20
DMTH4007SPD
N+N
40
20
DMNH4011LK3Q
N
40
20
DMNH4011LPSQ
N
40
20
DMTH6003SCTBQ
N
60
20
DMTH6004SPSQ
N
60
DMTH6004SCTBQ
N
60
DMTH6004SK3Q
N
DMTH6005LK3Q
Part Number
a
a
*Advance Information: For more details contact Diodes Sales
Page 26
@VGS = 10
@10V @4.5V V (nc)
a
a
a
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:33 Page 27
MOSFET PACKAGE EVOLUTION
Page 27
DIO 4630 MOSFETs brochure 2015 (Final Artwork) 29/07/2015 16:30 Page 2
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