AOD522P

AOD522P
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
ID (at VGS=10V)
30V
46A
RDS(ON) (at VGS=10V)
< 5.2mΩ
RDS(ON) (at VGS = 4.5V)
< 9.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
TO252
DPAK
TopView
D
Bottom View
D
D
S
D
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
V
36
A
17
IDSM
TA=70°C
±20
160
IDM
TA=25°C
Continuous Drain
Current
Units
V
46
ID
TC=100°C
Maximum
30
A
13
IAS
25
A
Avalanche energy L=0.1mH C
EAS
31
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev.3.0: February 2014
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
26
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
53
-55 to 175
Typ
15
40
2.2
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°C
Max
20
50
2.8
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
30
Units
V
VDS=30V, VGS=0V
1
TJ=55°C
5
µA
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.6
2
2.4
V
VGS=10V, ID=20A
3.2
4.3
5.2
6.2
7.5
7.3
9.5
mΩ
1
V
46
A
pF
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
91
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=20A
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
S
850
1150
1500
300
500
800
pF
15
60
150
pF
0.7
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
18
nC
Qg(4.5V)
Total Gate Charge
8.8
nC
Qgs
Gate Source Charge
4.1
nC
Qgd
Gate Drain Charge
3.6
nC
Qgs
Gate Source Charge
4.1
nC
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
7.3
ns
tr
Turn-On Rise Time
10.5
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge
IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, ID=20A
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
21.8
ns
5
ns
14.7
15
24
36
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation
PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design,
and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for
cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum
junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: February 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
4.5V
80
VDS=5V
80
7V
5V
4V
60
ID(A)
ID (A)
60
40
40
125°C
20
25°C
20
VGS=3.0V
0
0
0
1
2
3
4
0
5
12
2
3
4
5
6
Normalized On-Resistance
1.8
10
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
8
6
4
VGS=10V
2
1.6
VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature (Note E)
15
1.0E+02
ID=20A
1.0E+01
12
1.0E+00
9
IS (A)
RDS(ON) (mΩ
Ω)
125°C
6
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
3
1.0E-04
25°C
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.3.0: February 2014
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
VDS=15V
ID=20A
8
1400
Ciss
Capacitance (pF)
VGS (Volts)
1200
6
4
1000
800
600
Coss
400
2
200
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
10µs
10µs
RDS(ON)
limited
200
100µs
10.0
1ms
DC
10ms
1.0
Power (W)
100.0
5
300
1000.0
ID (Amps)
Crss
0
TJ(Max)=175°C
DC
TC=25°C
100
TJ(Max)=175°C
TC=25°C
0.1
0.0
0
0.01
0.1
1
10
100
0.0001
0.001
VDS (Volts)
0.01
0.1
1
10
Pulse Width (s)
VGS> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
RθJC=3°C/W
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.8°C/W
1
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Rev.3.0: February 2014
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Page 4 of 6
60
60
50
50
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
30
20
10
10
0
0
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
0
175
10000
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
42
40
TA=25°C
38
VBR(DSS)(V)
1000
Power (W)
40
100
36
34
32
30
28
10
26
24
22
1
1E-05
0.001
0.1
10
1000
20
-60
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
/T
D=T
on
TJ,PK=T
=TA+P
+PDM.Z
.ZθJA.RθJA
T
J,PK
A
DM θJA.RθJA
RθJA=64°C/W
=50°C/W
R
-20
20
60
100
140
180
Tj (°
°C)
VBR(DSS)=f(Tj); ID=1mA
Figure 15: Drain-source breakdown voltage
(Note E)
In descending
descending order
order
In
D=0.5, 0.3,
0.3, 0.1,
0.1, 0.05,
0.05, 0.02,
0.02, 0.01,
0.01, single
single pulse
pulse
D=0.5,
θJA
0.1
0.01
Single
Pulse
Single
Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: February 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.3.0: February 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6