AOS Semiconductor Product Reliability Report

AOS Semiconductor
Product Reliability Report
AO3406/L,
rev D
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
This AOS product reliability report summarizes the qualification result for AO3406/L.
Accelerated environmental tests are performed on a specific sample size, and then followed
by electrical test at end point. Review of final electrical test result confirms that AO3406/L
passes AOS quality and reliability requirements. The released product will be categorized by
the process family and be monitored on a quarterly basis for continuously improving the
product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AO3406/L uses advanced trench technology to provide excellent RDS(ON) and low gate
charge. This device is suitable for use as a load switch or in PWM applications. AO3406 and
AO3406L are electrically identical.
-RoHS Compliant
-AO3406L is Halogen Free
Detailed information refers to datasheet.
II. Die / Package Information:
AO3406/L
Standard sub-micron
Low voltage N channel
Package Type
3 lead SOT23
Lead Frame
Copper
Die Attach
Epoxy
Bonding Wire
Au wire
Mold Material
Epoxy resin with silica filler
Flammability Rating
UL-94 V-0
Backside Metallization
Ti / Ni / Ag
MSL (moisture sensitive level) Level 1 based on J-STD-020
Process
Note * based on information provided by assembler and mold compound supplier
III. Result of Reliability Stress for AO3406/L
Test Item
Test Condition
Time
Point
Lot
Attribution
Total
Sample
size
Number
of
Failures
MSL
Precondition
168hr 85°c
/85%RH +3 cycle
reflow@260°c
HTGB
-
39 lots
5775 pcs
0
JESD22A113
Temp = 150 °c,
Vgs=100% of
Vgsmax
168hrs
500 hrs
1000 hrs
1 lot
2 lots
5 lots
616pcs
0
JESD22A108
HTRB
Temp = 150 °c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
(Note A*)
1 lot
2 lots
5 lots
77pcs / lot
616pcs
0
JESD22A108
HAST
130 +/- 2°°c,
85%RH, 33.3 psi,
Vgs = 80% of Vgs
max
121°°c, 29.7psi,
RH=100%
100 hrs
(Note A*)
38 lots
77pcs / lot
2090 pcs
0
JESD22A110
96 hrs
(Note A*)
28 lots
55 pcs / lot
1540 pcs
0
JESD22A102
-65°°c to 150°°c,
air to air
250 / 500
cycles
(Note A*)
39 lots
55 pcs / lot
2145 pcs
0
JESD22A104
(Note A*)
55 pcs / lot
Pressure Pot
Temperature
Cycle
Standard
Note A: The reliability data presents total of available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 4
MTTF = 30575 years
The presentation of FIT rate for the individual product reliability is restricted by the actual
burn-in sample size of the selected product (AO3406/L). Failure Rate Determination is based
on JEDEC Standard JESD 85. FIT means one failure per billion hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
9
= 1.83 x 10 / [2 x (2x77x168+2x2x77x500+5x2x77x1000) x 258] = 4
9
8
MTTF = 10 / FIT = 2.68 x 10 hrs = 30575 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
1
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u = The use junction temperature in degree (Kelvin), K = C+273.16
K = Boltzmann’s constant, 8.617164 X 10-5eV / K