AOS Semiconductor Product Reliability Report AO4932, rev C Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AO4932. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AO4932 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AO4932 Standard sub-micron Low voltage N channel Package Type 8 lead SOIC Lead Frame Copper Die Attach Ag epoxy Bonding Wire Cu & Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AO4932 Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c - HTGB Temp = 150 °c, Vgs=100% of Vgsmax HTRB HAST Pressure Pot Temperature Cycle Lot Attribution Total Sample size Number of Failures Standard 29 lots 3575pcs 0 JESD22A113 168hrs 500 hrs 1000 hrs 1 lot 1 lot 1 lot 231pcs 0 JESD22A108 Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs (Note A*) 1 lot 1 lot 1 lot 77pcs / lot 231pcs 0 JESD22A108 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs (Note A*) 16 lots 77pcs / lot 880pcs 0 JESD22A110 96 hrs (Note A*) 20 lots 55 pcs / lot 1100pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 29 lots 55 pcs / lot 1595pcs 0 JESD22A104 (Note A*) 55 pcs / lot Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 14 MTTF = 8268 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AO4932). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x168+2x77x500+2x77x1000) x258] = 14 9 7 MTTF = 10 / FIT = 7.24 x 10 hrs = 8268 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s )] Acceleration Factor ratio list: 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C Af 258 87 32 13 5.64 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 K = Boltzmann’s constant, 8.617164 X 10-5eV / K 130 deg C 150 deg C 2.59 1