04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes PACKAGE: Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage Gate Current, IG Continuous Device Power Dissipation Power Derating Operating Junction Temperature, TJ Storage Temperature -15 V 10 mA 250 mW ≈ 2 mW/°C +150°C -65°C to +175°C SC70-5: (also available in SOT 23, and die format) Features: Benefits: Applications: High Gain Built-In Diodes VGS(off) Max –2.5 V (Selectable) Full Performance from Low Voltage Power Supply: As Low As 0.9 V Low Signal Loss/System Error High Quality, Low Level Signal Amplification Hearing Aids, Mini Microphones High-Gain/Low-Noise Amplifiers Low-Current/Low-Voltage Battery Powered Amplifiers Infrared Detector Amplifiers Ultra-High Input Impedance Pre-Amplifiers Package Lead Configuration: DEVICE SCHEMATIC: 4 Drain 3 Gate SOT-353 SC-70 (5-LEADS) 5 Source 1 Diode Diode 1 N/C 2 Gate 3 5 4 Source Drain Top View InterFET Corporation 715 N Glenville Dr., Richardson, TX 75081 www.interfet.com Page 1 of 3, (972) 238-1287 FAX (972) 238-5338 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes ELECTRICAL SPECIFICATIONS Group A -- Test Parameters Parameter BVGSS IGSS IDSS VGS (off) VGS (off) (note 3) GM BVG4 diode BVG4 diode RDS (on) CGS (note 2) êN (note 2) Notes: Final Package Test Conditions VDS = 0 V, IG = -1 μA VDS = 0 V, VGS = -10 V VDS = 0.92 V, VGS = 0.0 V VDS = 1.3 V, ID = 1 μA VDS = 3.3 V, ID = 1 μA VDS = 1.3 V, VGS = 0.0V VDS = 0 V, IG = 10 μA VDS = 0V, IG = -10 μA ID = ≤ 100 µA, VDS = ≤0.1 V, f = 1 kHz VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 1.3 V, At IDSS, f = 100 Hz Min. -15 Max. Units -0.10 nA 50.0 1,000.0 μA -0.2 -0.9 Volts -0.2 -2.5 Volts 600 2,250 μS 0.40 0.80 Volts -0.40 -0.80 3000 Ohms 5 pF 12 nV/√Hz 1. TA for all electrical tests is +25°C unless noted otherwise. 2. Guaranteed but not production tested. 3. Assuming internal diodes are not connected InterFET Corporation 715 N Glenville Dr., Richardson, TX 75081 www.interfet.com Page 2 of 3, (972) 238-1287 FAX (972) 238-5338 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes Typ. Noise Voltage: @ VDS = 1.3 Volts & ID = IDSS (nanoV per root Hz) 10 Hz 6.8 100 Hz 5.8 1K Hz 4.9 10K Hz 4.6 100K Hz 4.5 InterFET Corporation 715 N Glenville Dr., Richardson, TX 75081 www.interfet.com Page 3 of 3, (972) 238-1287 FAX (972) 238-5338