8/2014 IF1322A, IN1322B N-Channel Matched Dual Silicon Junction Field-Effect Transistor ∙ ∙ Absolute maximum ratings at TA = 25oC Low Noise, High Gain Amplifier Reverse Gate Source & Gate Drain Voltage -20V Continuous Forward Gate Current 10 mA Continuous Device Power Dissipation 480mW Power Derating 3.8 mW/oC Storage Temperature Range -65oC to +150oC Differential Inputs IF1322 Min Typ Max At 25oC free air temperature Static Electrical Characteristics Gate Reverse Current V(BR)GSS1 V(BR)GSS2 V(BR)GSS3 V(BR)GSS1 V(BR)GSS2 IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (pulsed) IDSS 8 Gate Source Forward Voltage VGSF 0.3 Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs 0.01 Differential Gate Source Voltage- A │VGS1-VGS2│ B Equivalent Short Circuit Input Noise Voltage1 Gate Source Breakdown Voltage Fx Equivalent Short Circuit Input Noise Current1 Process NJ132L Unit Test Conditions V IG = -25 uA, VDS = 0 V IG = -3 uA, VDS = 0 V IG = -1 uA, VDS = 0 V -0.1 nA VGS = -10 V, VDS = 0 V -0.8 -1.5 V VDS = 10 V, ID = 1 uA 25 mA VDS = 10 V, VGS = 0 V 1.0 V VDS = 0 V, IG = - 1 mA VDS = 0 V, IG = - 1 uA -20 0.9 1.1 mS VDS = 5 V, VGS = 0 V 30 mV VDS = 5 V, ID = 3 mA │VGS1-VGS2│ 40 mV VDS = 5 V, ID = 3 mA ~eN 4 2 nV/√Hz VDS = 5 V, ID = 3 mA 100 hz 1 kHz 0.05 pA/√Hz VDS = 5 V, ID = 3 mA 1 kHz in Note 1: Guaranteed but not tested. Dimensions in Inches (mm) SOIC-8: IF1322 1-G1, 2-D1, 3-S1, 4-G2, 5-G2, 6-D2, 7-S2, 8-G1 715 N. Glenville Dr., Ste. 400 Richardson, TX 75081 (972) 238-9700 Fax (972) 238-5338 www.interfet.com 1 kHz