Magnetic Angle Sensor KMT32B

Application Note
Magnetic Angle Sensor KMT32 B
Precise Angle Measurement
utilizing AMR Sensor KMT32B
This application note provides a very basic introduction to the fundamentals of
magnetic angle sensors based on the anisotropic magnetoresistive (AMR)
effect. It focuses to those users who may be unfamiliar with their
characteristics and modes of operation.
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Contents
1
Introduction .................................................................................................................... 3
2
Angle measurements utilizing magnetoresistive sensors ................................................ 3
3
Wheatstone bridges ....................................................................................................... 4
4
Error contributions .......................................................................................................... 5
5
6
7
4.1
Important facts........................................................................................................6
4.2
Some rules of thumb ..............................................................................................7
4.3
Geometrical tolerances...........................................................................................8
4.4
Temperature effects ...............................................................................................9
Choosing the correct magnet ......................................................................................... 9
5.1
Example: Choosing a magnet ...............................................................................11
5.2
Magnetic units ......................................................................................................11
Application circuits.........................................................................................................12
6.1
General microcontroller based solution................................................................. 12
6.2
Interpolator chip based solution ............................................................................ 12
Additional Information ....................................................................................................14
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1 Introduction
A strong feature of the magneto-resistive sensor technology is its dependence on the magnetic field
direction, almost independently on the actual magnetic field strength. This is related to the excellent
soft magnetic properties of the sensor material that completely saturates at very small applied
magnetic fields strengths of a few kA/m. ‘Complete saturation’ means that (almost) all magnetic
domains are aligned in the same direction parallel to the applied field, i.e. all magnetic domains
generate the same signal! A further increase of the magnetic field change will only marginally alter the
alignment of the magnetic domains and therefore will only lead to a marginal change in the signal.
In summary: the magneto-resistive effect depends only on the field direction and therefore becomes
independent on the magnetic field strength if the magnetic field is above a certain limit. Magneto
resistive angle sensors work in this regime. It takes small and simple magnets to create the required
field strengths.
2 Angle measurements utilizing magnetoresistive sensors
Magneto-resistive sensors are very well suited for measuring angles and rotations contactless on a
very precise scale. A magnetic field is used to transform the mechanical motion into an electrical
signal. A typical measurement set up is shown in figure 1: a magnet fixed on a rotation shaft is placed
in front of the sensor.
Rotation shaft
Permanent magnet
MR-sensor die
Packaged MR sensor
Figure 1: A typical arrangement of sensor and magnet for an angular measurement
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3 Wheatstone bridges
In the case of MR sensors, 4
resistors are commonly arranged
in a Wheatstone bridge:
Its output voltage can be written
as:
Va ,cos (α ) =
V0 ∆R
⋅
⋅ cos(2 ⋅ α )
2 R
Figure. 2: Wheatstone bridge 1
In case of rotational sensors, a
second Wheatstone bridge is
usually used, which is rotated by
45°.
Its output voltage becomes:
Va ,sin (α ) =
V0 ∆R
⋅
⋅ sin (2 ⋅ α )
2 R
Figure 3: Wheatstone bridge 2
15
10
5
Uo/Ucc [mV/V]
Both characteristic curves are
shown in figure 4:
The output signal amplitudes
depend on the supply voltage, as
MR
sensors
are
passive
components. That is the reason
why MR signals are usually
specified in mV/V.
0
0
45
90
135
180
225
270
315
360
-5
-10
-15
α [deg]
bridge1 (sin)
bridge2 (cos)
Figure 4: The characteristic sine and cosine output signals
of a conventional angular MR sensor
After removing the bridge offsets, angles can be measured and evaluated easily within a range
of 180° via a geometric relationship between sine and cosine:
Va ,sin
Va ,cos
and therefore
V0
= 2
V0
2
∆R
(T ) ⋅ sin (2 ⋅ α )
sin (2 ⋅ α )
R
=
= tan (2 ⋅ α )
∆R
cos(2 ⋅ α )
⋅
(T ) ⋅ cos(2 ⋅ α )
R
⋅
⇒α =
 Va ,sin
1
arctan
2
 Va ,cos
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



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Be sure that you consider the different cases for the arctan (x;y) :
y

arctan( ) → x > 0

x

y π
arctan( + ) → x > 0; y ≤ 0
x 2

arctan( y − π ) → x < 0; y < 0
arctan( x; y ) = 
x 2

π
+ → x = 0; y > 0

2

π

− → x = 0; y < 0
2

0 → x = 0; y = 0

The two measured signals can be used to calculate the ‘MR amplitude’
 ∆R 
2
2

 = Va ,sin + Va ,cos = const.
R


4 Error contributions
α will
∆α :
In general, the measured angle
value
ϕ0
and an angular error
differ from the original field angle
α0
by an constant offset
α = α 0 + ϕ 0 + ∆α
The angular error is caused only to a certain extent by intrinsic sensor error sources, as long as the
sensor is used in saturation.
Very often, people have a different understanding of accuracy ∆α of the measurement: for some, it is
the difference between actual and measured value. For others, it is the error which is obtained when
the measurement is repeated several times or the measurement is done with different rotational
directions. The latter case is called hysteresis or repeatability error, while the first case describes the
true measurement error.
Two classes of angular error contributions can be distinguished: those which distort the homogeneity
of the magnetic field at the sensor (distance variations in the xy plane, misalignment with respect to
the rotational axis, disturbing fields and objects, inhomogeneous magnets etc. ) and on the other
hand, those which deteriorate the quality of the sensor performance (like temperature).
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Objects
Disturbing fields
Environment
Angular error
Voff, TKVoff
Currents
Earth
Hysteresis
Temperature
Intrinsic
Amplitude synchronism
Phase errors
System
electronics
Error
contributions
Noise
Drifts
Resolution
Conversion
Floating processor
29.07.2009 - v10
Size
Material
Magnet
Eccentric magnet
X,Y plane
Inhomogeneities
Tolerances
Magnet staggers
Sensor off center
Z (distance
magnet-sensor)
Figure 5: Major contributions that affect the accuracy of a MR angular measurement
4.1 Important facts
The field strength of the applied magnet at the sensor has to be strong enough to saturate the soft
magnetic sensor material. This will ensure that the magnetization vector in the sensor will always be
(almost) parallel to the direction of the applied field. This is the condition where AMR sensors are
preferably operated for accurate angle measurements. The specified field strength is H≥25 kA/m
for MEAS’ MR angular sensors. This is the minimum required field strength for the KMT32B sensor in
order to achieve the specified performance.
Magnetic field strength for different materials
Field strength H in kA/m
70
M
1mm
9mm
60
Hartferrit (10/24p)
AlNiCo (35/5)
Neofer (55/50p)
NdFeB (N38)
Sm2Co7 (S240)
H0 limit
50
40
30
20
10
0
0
1
2
3
4
5
Air gap distance z in mm
Figure 6: The z dependence of the magnetic field strength for different magnet materials
The sensor will work properly down to 10 kA/m, but with a reduced accuracy of ≈ ±0.5° and increased
hysteresis.
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Figure 6 displays the magnetic field variation as a function of air gap distance z for different magnet
materials for a small disc magnet with 9mm diameter and 1mm thickness. Hard Ferrite (HF) and
Neofer are plastic bonded materials, while AlNiCo (grade 35/5), SmCo (grade S240) and NdFeB
(grade N38) are sintered materials, which have much higher remanences. To decide which magnet
material is best for the application is one important target in the design of a magnetic measurement
system.
As can be seen in figure 6, the magnetic field strength drops exponentially with the distance. But as
long as the magnetic field strength is well above the specified minimum value and the magnetic field
vector does not change, a possible distance variation between magnet and sensor is not of great
importance . This MR specific characteristic is also of importance for the temperature behaviour of
magnets, as magnets show reversible and irreversible losses with temperature.
The calculation of the MR amplitude
 ∆R 
2
2

 = Va ,sin + Va ,cos > Limit can be used to check if the
 R 
sensor is saturated at any time.
In summary: variations in the magnetic field strength due to mechanical tolerances or temperature will
have no effect on the measurement accuracy as long as the sensor is saturated. A recommended
working field strength is 32-40 kA/m (resp. 40-50 mT) over temperature.
4.2 Some rules of thumb
The following relationship of the accuracy on the applied field strength holds for the KMT32B:
∆α max ≈
4 kA / m°
H appl
The applied field strength has to be strong enough so that the influence of disturbing fields is less than
the demanded accuracy. As a rule of thumb, the maximum error from a disturbing field H disturb is
∆α max ≈ 57° ⋅
H disturb
H appl
∆α max is measured in °. For example, the earth magnetic field will cause a maximum error of
0.04
∆α max ≈ 57° ⋅
= 0.09° at the specified field H appl = 25 kA / m .
25
where
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4.3 Geometrical tolerances
The main error contributions to the measurement accuracy are caused by field inhomogeneities of the
rotating magnet used. It is therefore very important to look at the system sensor – magnet and to place
the right magnet at the correct position.
The alignment between sensor and magnet is also of importance, see figure 7. Figure 8 depicts the
error resulting from an off centre alignment of a KMT32B with respect to the magnet. The maximum
error resulting from (∆x,∆y) displacement can be estimated to
∆α max =
C
(w + l )
2
(
⋅ ∆x 2 + ∆y 2
)
where w and l are the width resp. length of the
magnet, and C ranges between 250 – 350,
depending on the magnet geometry used.
∆x, ∆y are the displacements from origin in
mm. The observed error originates basically
from field inhomogeneities. Therefore, the size
of the magnet in combination with assembly
tolerances creates the error contribution.
An eccentric mounting of the magnet with
respect to the axis of rotation is less critical for
small displacements.
Figure 7: Off centre alignment of the sensor
with respect to the axis of rotation
M
9mm
Figure 8: Maximum displacement error for KMT32B for a disc shaped magnet
of 9 mm diameter within +/-1mm displacement tolerances dx, dy
It is therefore very important for the application engineer to recognize the relationship between the
sensor and the magnet. Only very well aligned and matched arrangements will allow very precise and
accurate measurement of angles.
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4.4 Temperature effects
Both ohmic resistance and magneto-resistance originate from scattering processes of the conducting
electrons. As all scatter processes are temperature dependent, the bridge resistance and MR effect
∆R/R show a temperature dependence as well.
Temperature coefficients are usually referred to two temperatures via
TCX =
X (T2 ) − X (T1 )
1
⋅
⋅ 100%
X (T1 )
(T2 − T1 )
for X= bridge resistance (BR) resp. signal voltage (SV). If not otherwise stated, usually T1 = -25 °C and
T2 = 125 °C.
As long as the arc tan method is used to calculate the angle, temperature effects are cancelled out in
first approximation.
Another important value is the temperature coefficient of the offset, which is very small, but present.
This temperature coefficient is caused by small differences in the temperature behavior of the four
bridge resistors. In practice, a drift in the output voltage is observed, which can not be separated from
the regular output signal caused by magnetic fields and will need to be calibrated for very precise
measurements.
The temperature coefficient of the offset will thus limit the measurement accuracy. With a specified
offset temperature coefficient of
TCVoff <4 µV/V/K, a maximum of
∆Voff
Hub
≈2% is expected for
KMT32B for a temperature difference of ∆T =125°C, resulting in a maximal offset related error of
∆α max ≈ 1° (i.e. no offset temperature compensation applied).
5 Choosing the correct magnet
Two rule of thumbs can directly be derived from the error discussion above:
• in general, the applied field strength should be as strong as possible
• the magnetic field has to be homogenous, i.e. the magnets should be as large as possible
Therefore, before picking the correct magnet , some important criteria should be identified, like
•
•
•
what are the measurement conditions (temperature, disturbing fields, etc.) ?
what is the acceptable maximal angular error ?
what will be typical geometrical tolerances of magnet with respect to the sensor in x, y and z
direction ?
• what will be the typical mounting tolerances ∆x and ∆y of the sensor with respect to the axis of
rotation ?
All these quantities will have some influence on the quality of the angle measurement and will also
have an impact on the choice of the magnet. Table 1 depicts the major properties of several
commonly traded magnetic materials.
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Name
Material
Sprox
Oxide ceramic
11/22p
hard ferrit
HF22/15
Fe-Ba-O
Br
(BH)max
mT
kJ/m
225
10,5
3
TCBr
Tmax
%/°C
°C
-0.20
140
L/D
Remark
<1
Geometry by injection moulding;
chemical inert
360
22
-0.20
250
<1
Geometry by pressing and
sintering / injection moulding;
chemical inert
Neofer
Nd-Fe-B
580
55
-0.12
120
Sm2Co17
Sm-Co
1080
195
-0.03
300
N38
Nd-Fe-B
1260
>0.5
Geometry by injection moulding
55/100 p
120
>1
Low temperature; highly corrosive
Table 1: Survey of commonly used magnet materials
Magnetic field strength at 1 mm distance of a magnet
with dimensions L x L/2 x L/2
H in kA/m
100
10
5
10
15
20
25
Magnet size L in mm
HF22/15
Neofer 55/100p
Sm2Co7
Figure 9: The variation of the magnetic field strength at a distance of 1 mm
for a cube with dimension Lx(L/2)x(L/2)
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5.1 Example: Choosing a magnet
In the following section, it will be shown how to estimate the correct magnet size (with length l and
width w) for a maximum tolerated angular error of ∆ω=1° and two alignment tolerances R=0.5 mm and
R=1 mm, using formula
∆α max =
case 1:
C
(w + l )2
⋅ R2
alignment tolerance R= 1 mm
2
2
The formula estimates the geometrical size of the magnet to be at least (w+l) >C*1 mm ,
i.e. (w+l) > 18 mm with C=320°. As can be taken from figure 10, a ferrite magnet (HF22/11)
3
with geometrical dimensions of at least 20 x 10 x 10 mm will provide the specified
magnetic field strength at a distance of 1 mm (magnet to sensor chip surface).
case 2:
alignment tolerance R= 0.5 mm
The formula estimates the geometrical size of the magnet to be at least
2
2
(w+l) >C*0.25 mm , i.e. (w+l) > 9 mm. A NdFeB magnet (Neofer 55/100) with geometrical
3
dimensions of 6 x 3 x 3 mm will fulfill the desired conditions at a distance of 1 mm (magnet
to sensor chip surface), as can be seen in figure 10.
The use of sintered NdFeB material will increase the field strength at sensor furthermore, allowing
larger tolerances for the distance sensor surface – magnet.
Obviously, many other magnet geometries and materials will lead to the same results in both cases.
5.2
Magnetic units
A fairly confusing situation on magnetic units appears to the normal reader, who is not a specialist in
magnetism. The following table shall help to find conversion factors quickly between the different units
used.
Unit 1
multiply = Unit 2
Remark
by
4
Tesla
10
Gauss
Oerstedt
1
Gauss
µr = 1 !
Oerstedt
79,58
A/m
10 /(4xπ)
For the correct reference, please refer to the
corresponding website at NIST / Boulder, CO
www.boulder.nist.gov/div818/81803/PDFs/magnetic_units.pdf
3
Table 2: Conversion factors for magnetic units
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6 Application circuits
6.1 General microcontroller based solution
This solution is a simple system with medium accuracy. The accuracy depends on the ADC resolution
of the used microcontroller. The ADC must have a input voltage range of 0V to VCC. With the
Wheatstone bridge a DC voltage of ½ VCC is generated to set the ADC in correct input voltage span.
The proposed system uses a simple amplifier to enable the sensor signals to be read into the ADC of
the microcontroller.
Figure 10: Schematic of a microcontroller based MR system
6.2 Interpolator chip based solution
The interpolator chip iC-NQC from IC-HAUS (http://www.ichaus.de/NQC) is a monolithic A/D converter
which, by applying a count-safe vector follower principle, converts sine/cosine sensor signals with a
selectable resolution and hysteresis into angle position data. This absolute value is output via a
bidirectional, synchronous-serial I/O interface in BiSS C protocol and trails a master clock rate of up to
10 Mbit/s. Alternatively, this value can be output so that it is compatible with SSI in Gray or binary
code, with or without error bits. The device also supports double transmission in SSI ring mode. Signal
periods are logged quickly by a 24-bit period counter that can supplement the output data with an
upstream multiturn position value. At the same time any changes in angle are converted into
incremental A QUAD B encoder signals. Here, the minimum transition distance can be stipulated and
adapted to suit the system on hand (cable length, external counter). A synchronized zero index Z is
generated if enabled by PZERO and NZERO
The front-end amplifiers are configured as instrumentation amplifiers, permitting sensor bridges to be
directly connected without the need for external resistors. Various programmable D/A converters are
available for the conditioning of sine/cosine sensor signals with regard to offset, amplitude ratio and
phase errors (offset compensation by 8-bit DAC, gain ratio by 5-bit DAC, phase compensation by 6-bit
DAC). The front-end gain can be set in stages graded to suit all common differential sensor signals
from approximately 20mVpp to 1.5Vpp, and also non-complementary sensor signals from 40 mVpp to
3 Vpp respectively.
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Figure 11: Schematic of an incremental system with NQ-Chip and line driver from IC- Haus
The device can be configured using two bidirectional interfaces, the EEPROM interface from a serial
EEPROM with I2C interface, or the I/O interface in BiSS C protocol. Free storage space on the
EEPROM can be accessed via BiSS for the storage of additional data.
After a low voltage reset, iC-NQC reads in the config- uration data including the check sum (CRC)
from the EEPROM and repeats the process if a CRC error is detected.
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7 Additional Information
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The information in this sheet has been carefully reviewed and is believed to be accurate; however, no responsibility is assumed for
inaccuracies. Furthermore, this information does not convey to the purchaser of such devices any license under the patent rights to the
manufacturer. Measurement Specialties, Inc. reserves the right to make changes without further notice to any product herein.
Measurement Specialties, Inc. makes no warranty, representation or guarantee regarding the suitability of its product for any particular
purpose, nor does Measurement Specialties, Inc. assume any liability arising out of the application or use of any product or circuit and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and
do vary in different applications. All operating parameters must be validated for each customer application by customer’s technical
experts. Measurement Specialties, Inc. does not convey any license under its patent rights nor the rights of others.
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