RENESAS 2SD1420

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Customer Support Dept.
April 1, 2003
Cautions
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
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2SD1420
Silicon NPN Epitaxial
ADE-208-1151 (Z)
1st. Edition
Mar. 2001
Application
Low frequency power amplifier
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1420
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
180
V
Collector to emitter voltage
VCEO
120
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
1.5
A
3
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
180
—
—
V
I C = 1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
120
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 160 V, IE = 0
60
—
320
VCE = 5 V, IC = 0.15 A
hFE2
30
—
—
VCE = 5 V, IC = 0.5 A
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.0
V
I C = 0.5 A, IB = 50 mA, Pulse
Base to emitter voltage
VBE
—
—
0.9
V
VCE = 5 V, IC = 0.15 A, Pulse
DC current transfer ratio
Note:
hFE1*
1
1. The 2SD1420 is grouped by h FE1 as follows.
Mark
EA
EB
EC
hFE1
60 to 120
100 to 200
160 to 320
2
2SD1420
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
Collector Current IC (A)
Collector Power Dissipation Pc (W)
(on the alumina ceramic board)
1.2
0.8
0.4
0
5.
0.8
2.5
2.0
0.6
1.5
0.4
1.0
0.2
0.5 mA
IB = 0
0
0
50
100
150
Ambient Temperature Ta (°C)
10
20
30
40
50
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
300
VCE = 5 V
Pulse
200
100
20
10
25
–25
Ta = 75°C
50
5
2
1
DC Current Transfer Ratio hFE
500
Collector Current IC (mA)
Pulse
4.0 5
3.
3.0
Pusle
VCE = 5 V
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
1
3
10 30 100 300 1,000 3,000
Collector Current IC (mA)
3
Collector to Emitter Saturation Voltage vs.
Collector Current
1.2
IC = 10 IB
Pulse
1.0
0.8
0.6
0.4
0.2
0
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
240
Gain Bandwidth Product fT (MHz)
Collector to Emitter Saturation Voltage
VCE (sat) (V)
2SD1420
VCE = 5 V
200
160
120
80
40
0
10
30
100
300
Collector Current IC (mA)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
200
f = 1 MHz
IE = 0
100
50
20
10
5
2
1
4
2
5
10
20
50 100
Collector to Base Voltage VCB (V)
1,000
2SD1420
Package Dimensions
As of January, 2001
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
5
2SD1420
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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