RENESAS HRC0203C

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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HRC0203C
Silicon Schottky Barrier Diode for Rectifying
ADE-208-1518B (Z)
Rev.2
Nov. 2002
Features
• Low forward voltage drop and suitable for high efficiency rectifying.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HRC0203C
S8
UFP
Pin Arrangement
Cathode mark
Mark
1
S8
2
1. Cathode
2. Anode
HRC0203C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
1
Repetitive peak reverse voltage
VRRM *
1
Average rectified current
IO *
2
Value
Unit
30
V
200
mA
Non-Repetitive peak forward surge current
IFSM *
2
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Notes: 1. See from Fig.3 to Fig.5, with polyimide board.
2. 10 msec sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
—
—
0.25
V
IF = 5 mA
VF2
—
—
0.45
IF = 200 mA
Reverse current
IR
—
—
30
µA
VR = 10 V
Thermal resistance
Rth(j-a)
—
550
—
°C/W
Polyimide board *
Note:
1. Polyimide board
3.0
1.5
0.8
20h×15w×0.8t
1.5
Rev.2, Nov. 2002, page 2 of 2
Unit: mm
1
HRC0203C
Main Characteristic
10–3
1.0
Ta = 75°C
Pulse test
10–4
Reverse current IR (A)
Forward current IF (A)
10–1
10–2
Ta = 75°C
10–3
10
Ta = 25°C
Ta = –25°C
–4
Ta = 25°C
10–5
10–6
Ta = –25°C
10–7
10–5
10–6
Pulse test
0
0.2
0.4
0.6
0.8
10–8
1.0
0
10
20
30
40
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
0.30
0.6
0A
0.25
t
T
t
D=—
T
Tj = 25°C
0.20
D=1/6
0.15
D=1/3
sin(θ=180˚)
D=1/2
0.10
DC
0.05
0
0
0.05
0.10
0.15
0.20
0.25
Reverse power dissipation Pd (W)
Forward power dissipation Pd (W)
0V
t
0.5
T
t
D=—
T
Tj = 125°C
D=5/6
0.4
D=2/3
0.3
D=1/2
0.2
sin(θ=180˚)
0.1
0
0
10
20
30
40
Forward current IF (A)
Reverse voltage VR (V)
Fig3. Forward power dissipation vs. Forward current
Fig4. Reverse power dissipation vs. Reverse voltage
Rev.2, Nov. 2002, page 3 of 3
HRC0203C
Main Characteristic (cont)
Average rectified current IO (A)
0.30
VR = VRRM/3
Tj = 125°C
Rth(j-a) = 550°C/W
0.25
0.20
0.15
0.10
D=1/3
D=1/6
0.05
0
–25
0
25
50
sin(θ=180°)
D=1/2
DC
75
100 125 150
Ambient temperature Ta (°C)
Fig.5 Average rectified current vs. Ambient temperature
f = 1MHz
Pulse test
Capacitance C (pF)
100
10
1.0
0.1
1.0
10
Reverse voltage VR (V)
Fig.6 Capacitance vs. Reverse voltage
Rev.2, Nov. 2002, page 4 of 4
HRC0203C
Package Dimensions
As of July, 2002
1.2 ± 0.10
0.13 ± 0.05
1.6 ± 0.10
0.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
UFP
—
Conforms
0.0016 g
Rev.2, Nov. 2002, page 5 of 5
HRC0203C
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.2, Nov. 2002, page 6 of 6