Thyristor SMD Type Silicon Controlled Rectifier MCR100 (KCR100) ■ Features 1.70 0.1 ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V 0.42 0.1 0.46 0.1 MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ ■ Electrical Characteristics Ta = 25℃ Symbol Parameter On State Voltage (Note.1) Gate Trigger Voltage ITM= 1 A 1.7 0.8 rever seblocking voltage MCR100-8/8R VRRM IDRM= 10 uA IH IGT Max VAK= 7V VDRM Gate trigger current Typ VGT MCR100-6/6R Peak forward or reverse blocking Current Min VTM Peak Repetitive forward and Holding current Test Conditions 400 VAK=Rated IRRM VDRM or VRRM 5 A2 5 15 15 30 30 80 80 200 VAk= 7 V B mA 10 A1 A V 600 VAK=7V,IH=20mA IDRM Unit uA Note.1: Forward current applied for 1 ms maximum duration，duty cycle≤1% ■ Ordering information Normal Pin Assignment 1 2 3 Marking MCR100-6 G A K P2* MCR100-6R K A G P2* MCR100-8 G A K P3* MCR100-8R K A G P3* www.kexin.com.cn 1