DIP Type Diodes

Diodes
DIP Type
Schottky Diodes
SB320 ~ SB3200
DO-27 (DO-201AD)
■ Features
● Metal-Semiconductor junction with guard ring
1.0 (25.4)
MIN.
● Epitaxial construction
0.210 (5.3)
0.190 (4.8)
DIA.
● Low forward voltage drop
● High current capability
0.375 (9.5)
0.285 (7.2)
● The plastic material carries UL recognition 94V-0
0.052 (1.32)
1.0 (25.4)
MIN.
0.048 (1.22)
DIA.
Dimensions in inches and (millimeters)
■ Absolute Maximum Ratings Ta = 25℃
Symbol
SB
320
SB
330
SB
340
SB
350
SB
360
SB
380
SB
SB
SB
3100 3150 3200
Repetitive Peak Reverse Voltage
VRRM
20
30
40
50
60
80
100
150
200
RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
0.87
0.9
Parameter
Forward Voltage @ 3A
VF
0.55
0.7
0.85
Averaged Forward Current
IFAV
3
Peak Forward Surge Current @ 8.3ms
IFSM
80
Maximum DC Reverse Current Ta=25℃
Ta=100℃
Typical Junction Capacitance
IR
Cj
180
0.2
10
5
110
Thermal Resistance.Junction- to-Ambient
RthJA
60
Thermal Resistance.Junction- to-Case
RthJC
15
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55 to 150
V
A
0.5
150
Unit
mA
100
80
pF
℃/W
℃
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1
Diodes
DIP Type
Schottky Diodes
SB320 ~ SB3200
■ Typical Characterisitics
FIG. 1-TYPICAL FORWARD CURRENT DERATING CURVE
IG. 2-TYPICAL FORWARD CHARACTERISTICS
100.00
INSTANTANEOUS FORWARD CURRENT (A)
AVERAGE FORWARD CURRENT,(A)
5.0
4.0
3.0
2.0
1.0
SB320~SB340
SB350~SB360
SB380~SB3100
SB3150
SB3200
10.00
1.00
0.10
0.01
0.0
0
20
40
60
80
100
120
140
0.2
160
0.4
FIG. 3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURREN
REVERSE LEAKAGE CURRENT (mA)
PEAK FORWARD SURGE CURRENT (A)
1.0
100.000
80
60
40
20
100
10.000
1.000
0.100
0.010
25
0.001
0
1
10
100
FIG. 5-TYPICAL JUNCTION CAPACITANCE
600
SB320~SB340 ~
500
SB350~SB360
SB380~SB3100
400
SB3150
SB3200
300
200
100
0
0
1
10
REVERSE VOLTAGE (V)
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20%
40%
60%
80%
PERCENTAGE RATED PEAK REVERSE VOLTAGE (%)
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE (pF)
0.8
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
2
0.6
FORWARD VOLTAGE (V)
AMBIENT TEMPERATURE ( )
100
100%