A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 5 1 SIEGET45 - Low Noise Amplifier with BFP520 T r a n s i s t o r a t 1 .9 G H z R F & P r o t e c ti o n D e v i c e s Edition 2007-01-08 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. 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Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Application Note No. 051 SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz Revision History: 2007-01-08, Rev. 2.0 Previous Version: Page Subjects (major changes since last revision) All Document layout change Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Application Note 3 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz 1 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 (5th Generation, SOT343) SIEGET®45-line. Improved performance in Gain (16 dB) and OIP3 (15 dBm) are the outstanding features at low current IC = 7 mA (@ VCC = 2 V). Consider while designing, the device shows potential instability in the frequency range around 1 GHz. Due to the hard stability matching conditions the 2nd example is still stable over the whole frequency range. The 1st example is unstable at 1 GHz nevertheless the gain exceeds 16.5 dB, noise figure ~ 1.4 dB. Table 1 Simulation and Measurement results Data @ 1.9 GHz Simulation result Measurement result Gain (S21) 16 dB 16.5 dB RLIN |S11| RLout |S22| IP3 NF 13 dB > 11 dB 17 dB > 20 dB - 15 dBm 1.5 dB 1.5 dB DC Supply C8 C5 R5 R3 C7 R4 C3 C6 R2 L3 L1 L2 R1 C4 RFout l1 l1 C1 l1 RFin C2 optional BFP520 lE C9 optional Striplines l1/λ 0 = 1.13 10-2 lΕ /λ 0 = 0.9 10-2 lE ZL ~ 72Ω ZL ~ 72Ω AN051_application.vsd Figure 1 Schematic of the BFP520 Application @ 1.95 GHz Application Note 4 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz 1.1 PCB Layout and Component Placement Fixed components: J1: connector / J2: switch / C8: 4.7 uF (Elko) AN051_application_board.vsd Figure 2 Application board (scale 3:1) - original size 23 x 35 mm AN051_board_design.vsd Figure 3 Board design - Top Layer and Layer-2 - scale 1:1 Top layer Top side 0.2mm (FR4) doubleside Cu 35µ Layer 2 0.51mm (FR4) Bottom layer Bottom side Cu 70µ A N051_PCB_cross_section.vsd Figure 4 PCB cross section Application Note 5 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz 1.2 Circuit modeling and simulation schematic NASSE 1.75, simulated with APLAC 7.02 08/1998, Munich MSub FR4 ER = 4.16 H = 0.2m RHO = 1 T = 0.034m TAND = 0.02 Gradient Optimization Goal NoiseFigure Between 1.4 1.5 Goal S_K GT 1.4 Goal MagdB(S(1,1)) Between -10 -15 Goal MagdB(S(2,2)) Between -10 -15 Goal MagdB(S(2,1)) Between 15 19 C5 R3 C3 L1 Le2 R1 Port_01 1 6 W = 0.19m L = Le5 Le5 7 W = 0.19m L = Le6 L2 Le4 W =0.19m L =Le2 RFin W =0.19m L = Le1 2 NPort_01 E1 Le7 9 C4 RFout Port_02 Via_E03 C9 3 8 W = 0.19m L = Le7 W =0.19m L = Le4 Le1 L3 Le6 5 C1 C6 DIAM = 0.3m E2 LE12 C9 optional 0.2 ... 0.9 pF depend on the physical and geometrical board properties LE21 W =0.19m L =LE12 Via_E1 W =0.19m L =LE12 Via_E2 DIAM = 0.3m DIAM = 0.3m AN051_Simulation_circuit.vsd Figure 5 RF Simulation Circuit of the BFP520 Application Final analysis APLAC 7.04 User: Siemens AG Aug 27 1998 2.00 K 1.50 [1] 1.00 0.50 0.00 1.000G 1.375G S_K NoiseFigure 1.750G f [Hz] 2.125G 2.500G S_u AN051_Noise_Figure_K .vsd Figure 6 Noise Figure, Stability K (S_k) µ (S_u) Application Note 6 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz Final analysis APLAC 7.04 User: Siemens AG Aug 27 1998 2.00 K 1.50 [1] 1.00 0.50 0.00 1.000G 1.375G S_K NoiseFigure 1.750G f [Hz] 2.125G 2.500G S_u AN051_input_output_matching1.vsd Figure 7 Input and output matching Final analysis APLAC 7.04 User: Siemens AG Aug 27 1998 30.00 Gain 25.00 [dB] 20.00 15.00 10.00 1.000G 1.375G MagdB(S(2,1)) 1.750G 2.125G f [Hz] dB(S_MSG) 2.500G AN051_maxium_stable_gain.vsd Figure 8 Maximum stable gain and transducer gain Final analysis APLAC 7.04 User: Siemens AG Aug 27 1998 0.5 2.0 -0.5 -2.0 0.0 0.2 S(1,1) 1.0 5.0 S(2,2) AN051_input_output_matching2.vsd Figure 9 Input and output matching Application Note 7 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz 1.3 1stapplication circuit measurement results Stable under proved condition (50 Ω); best noise and performance. The application shows potential instability at 1 GHz. Table 2 Components of 1st application Component Value C1 15 pF 1) C2 Input match Improve stability 1) C3 15 pF C4 100 pF1) C4 100 pF1) 15 pF 1) C7 68 pF 1) C8 1) C6 Comment L1 L2 12 nH Comment 2) 2.2 nH 2) 2) L3 15 nH R1 27 Ω3) R2 18 Ω 3) R3 33 Ω 3) R4 33 Ω3) R5 0 Ω3) Input match Output match Output match Output match 1 nF C9 Component Value Improve stability Improve stability Bias; IC= 6 mA VCC = 2 V 1) Murata 2) Toko 0402 3) S & M 0402 Application Note 8 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz CH1 S11 log MAG 5 dB/ REF 0 dB CH1 S21 2_:-11.116 dB log MAG 5 dB/ REF 0 dB 1_:-11.014 dB 1.9000 GHz C2 2_: 16.51 dB 1.963 360 000 GHz 1.963 360 000 GHz 1_: 16.85 dB 1.9000 GHz C2 Avg 16 Avg 16 2 2 1 1 START 0.100 000 000 GHz CH1 S21 log MAG START 0.100 000 000 GHz STOP 2.500 000 000 GHz 5 dB/ REF 0 dB CH1 S22 2_: 16.51 dB log MAG 5 dB/ REF 0 dB 2_:-29.879 dB 1.963 360 000 GHz 1.963 360 000 GHz 1_: 16.85 dB 1.9000 GHz C2 STOP 2.500 000 000 GHz 1_:-35.013 dB 1.9000 GHz C2 Avg 16 Avg 16 2 1 2 START 0.100 000 000 GHz START 0.100 000 000 GHz STOP 2.500 000 000 GHz STOP 2.500 000 1 000 GHz AN051_1appl_circuit_measurement_results.vs Figure 10 Measurement results of 1st application Application Note 9 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz Noise figure vs. frequency 3 2.8 2.6 F = 1960MHz NF = 1.49dB (Icc = 6mA) NF = 1.52dB (Icc = 7mA) NF [dB] 2.4 2.2 2 1.8 1.6 1.4 1.2 1 900 Icc = 6mA Icc = 7mA 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 f [MHz] AN051_Noise_Figure(f).vsd Figure 11 Noise Figure (VCC = 2 V, TC = 25 °C) 1.4 2nd application circuit measurement results Absolutely stable over the whole frequency range (k > 1, 0.1... 2.5 GHz, see stability circles in Figure 12 and Figure 13). Less performance in noise figure (1.5 dB) and gain (15 dB) than the application example above. Table 3 Components of 1st application Component Value C1 15 pF Comment 1) C2 C3 15 pF 100 pF C4 100 pF 1) C6 15 pF 1) C7 68 pF 1) C8 1) 1 nF C9 0.5 pF1) C4 Comment 2) Input match L1 6.8 nH Improve stability L2 1.2 nH2) Output match L3 5.6 nH 2) Output match R1 22 Ω3) R2 18 Ω 3) R3 33 Ω 3) R4 33 Ω3) R5 0 Ω3) 1) 1) Component Value Input match Output match Improve stability Improve stability Bias; IC= 6 mA VCC = 2 V 1) Murata 2) Toko 0402 3) S & M 0402 Application Note 10 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz AN051_source_stability_circules.vsd Figure 12 Source stability circules AN051_load_stability_circules.vsd Figure 13 Load stability circules Stability definitions: S_D the stability factor k S_D the magnitude of the S-matrix determinant |∆| S_u a stability factor µ (s) AN051_stability_analysis.vsd Figure 14 Stability analysis Application Note 11 Rev. 2.0, 2007-01-08 Application Note No. 051 SIEGET®45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz CH1 S11 log MAG 5 dB/ REF 0 dB CH1 S12 2_:-16.014 dB log MAG 5 dB/ REF 0 dB 1.960 000 000 GHz 1_:-16.745 dB 1.9000 GHz C2 2_:-24.991 dB 1.960 000 000 GHz 1_:-25.158 dB 1.9000 GHz C2 Avg 16 Avg 16 2 1 2 1 START 0.100 000 000 GHz CH1 S21 log MAG STOP 2.500 000 000 GHz 5 dB/ REF 0 dB START 0.100 000 000 GHz CH1 S22 2_: 14.74 dB log MAG 1.960 000 000 GHz 5 dB/ REF 0 dB 2_:-12.376 dB 1.960 000 000 GHz 1_: 15.062 dB 1.9000 GHz C2 STOP 2.500 000 000 GHz 1_:-13.198 dB 1.9000 GHz C2 Avg 16 Avg 16 2 2 1 1 START 0.100 000 000 GHz STOP 2.500 000 000 GHz START 0.100 000 000 GHz STOP 2.500 000 000 GHz AN051_2appl_circuit_measurement_results.vsd Figure 15 Measurements results of 2nd application Application Note 12 Rev. 2.0, 2007-01-08