2SC2610 Silicon NPN Triple Diffused REJ03G0700-0200 (Previous ADE-208-1068) Rev.2.00 Aug.10.2005 Application • High voltage amplifier • TV Video output Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Rev.2.00 Aug 10, 2005 page 1 of 5 Symbol VCBO VCEO VEBO IC PC Ratings 300 300 5 100 800 Unit V V V mA mW Tj Tstg 150 –55 to +150 °C °C 2SC2610 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Rev.2.00 Aug 10, 2005 page 2 of 5 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO hFE VCE(sat) fT Cob Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.0 200 1.5 — 4.0 Unit V V V µA V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 mA IC = 20 mA, IB = 2 mA VCE = 20 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz 2SC2610 Main Characteristics Typical Output Characteristics 1.0 800 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 400 200 50 100 150 200 12 10 0.6 8 6 0.4 4 2 µA 0.2 0 0.4 0.8 1.2 1.6 2.0 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics DC Current Transfer Ratio vs. Collector Current 100 50 DC Current Transfer Ratio hFE Collector Current IC (mA) 0.8 IB = 0 0 100 VCE = 20 V 20 10 5 2 1 Ta 80 60 VCE = 20 V Pulse C 75° = 25 –25 40 20 0 0.2 0.4 0.6 0.8 2 5 10 20 50 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current 10 5 IC = 10 IB Pulse –25 Ta =7 1.0 25 5 °C 2 0.5 0.2 0.1 1 1 1.0 2 5 10 20 50 Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 100 Gain Bandwidth Product fT (MHz) 0 Collector to Emitter Saturation Voltage VCE(sat) (V) 16 14 100 100 VCE = 20 V 80 60 40 20 0 1 2 5 10 20 50 Collector Current IC (mA) 100 2SC2610 Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SC2610 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-51 PRSS0003DC-A TO-92 Mod / TO-92 ModV 0.35g 4.8 ± 0.4 Unit: mm 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55 Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5 Max 1.27 2.54 Ordering Information Part Name 2SC2610TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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