To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES ................................................................................ 400V ¡ICM .................................................................................... 200A e TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VCES VGES VGEM Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s ICM Tj Tstg Collector current (Pulsed) Junction temperature Storage temperature See figure 1 ELECTRICAL CHARACTERISTICS Ratings Unit 400 ±30 ±40 V V V 200 –40 ~ +150 –40 ~ +150 A °C °C (Tj = 25°C) Symbol Parameter V(BR)CES ICES Collector-emitter breakdown voltage Collector-emitter leakage current IGES VGE(th) Gate-emitter leakage current Gate-emitter threshold voltage Test conditions Limits IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V Min. 450 — Typ. — — Max. — 10 VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA — — — — ±0.1 7.0 Unit V µA µA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160 120 < 70°C TC = 80 40 0 0 10 20 30 MAXIMUM PULSE COLLECTOR CURRENT 2000 MAIN CAPACITOR CM (µF) PULSE COLLECTOR CURRENT ICM (A) PERFORMANCE CURVES 40 1600 1200 800 VCM = 350V TC < = 70°C > 28V VGE = 400 0 140 50 GATE-EMITTER VOLTAGE VGE (V) 160 180 200 220 240 PULSE COLLECTOR CURRENT ICP (A) Figure 1 Figure 2 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + – Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 180A CM = 800µF VGE = 28V 360V 200A 1000µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1000µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999