Replacing Micron N25Q256A with Macronix MX25L25635F

APPLICATION NOTE
Migrating to Macronix MX25L25635F
from Micron N25Q256A
1. Introduction
This application note is the migration guide for migrating to Macronix MX25L25635F from Micron
N25Q256A. The document does not provide detailed information on individual device, but highlights the
similarities and differences between them. The comparison covers the general features, performance,
command codes and other differences.
The information provided is based on the data available at the time the document was released.
Macronix MX25L25635F and Micron N25Q256A datasheets may override this application note if there
is a different description for the same specification in the datasheets.
Please refer to the contents and comparison tables below for more details.
Publication Number: AN155V1
1
Issued: JUN. 28, 2012
APPLICATION NOTE
2. General Features
2-1. Feature Comparison
Table 2-1. Feature Comparison Table
Macronix
MX25L25635F
Micron
N25Q256A
1-1-1
1-1-2/1-2-2
1-1-4/1-4-4 *
1-1-1
1-1-2/1-2-2
1-1-4/1-4-4 *
50MHz
54MHz
104MHz(x1)
84MHz(x2)
84MHz(x4)
108MHz(x1)
88MHz(x2)
78MHz(x4)
133MHz
(x1/x2/x4)
108MHz
(x1/x2/x4)
NA
54MHz
V
V
4KB/32KB/64KB
4KB/64KB
256Byte
256Byte
4Kbit
64Byte
Program/ Erase Suspend & Resume
V
V
Read Enhance Mode
V
V
Wrap Around Read Mode
V
V
Configurable Dummy Cycle
V
V
Adjustable Output Driver
V
V
Fast boot (XIP) Mode
V
V
S/W Reset Command
V
V
Reset# Pin
V
Option
BP Protect
Top/Bottom
Top/Bottom
Company
VCC
2.7V-3.6V
2.7V-3.6V
Architecture
I/O
Normal Read
Fast Read Clock Frequency
2x I/O: 4dummy cycles
4x I/O: 6dummy cycles
Enhance Frequency
(Maximum dummy cycle)
DTR
QPI Interface
Sector Size
Program Buffer Size
Security OTP
Features
Password Protection
V
Volatile Write Protection
V
V
Non-volatile Write Protection
V
V
Note:
* "x-y-z" means I/O mode used to indicate the number of active pins for Command (x), Address (y), and Data (z).
Publication Number: AN155V1
2
Issued: JUN. 28, 2012
APPLICATION NOTE
3. Address Protocol Support
Table 3-1. Address Protocol
4Byte Mode
Bank Address
4Byte Command Set
N25Q256A
V
V
V
MX25L25635F
V
V
V
Micron
Macronix
Both Macronix and Micron support three kinds of address protocols:
“4Byte Mode addressing”
“Bank Address”
“4Byte Command Set”
Macronix MX25L25635F provides compatible 4Byte operation command set with Micron N25Q256A
device, which is shown as the table below. In following section we’ll point out the differences between
Macronix MX25L25635F and Micron N25Q256A.
Table 3-2. Related Command Set
Instruction
4Byte ADD
Approach
Publication Number: AN155V1
Description
Macronix
MX25L25635F
Micron
N25Q256A
EN4B
Enter 4-byte address mode
B7h
B7h
EX4B
Exit 4-byte address mode
E9h
E9h
RDEAR
Read Extended Address Register
C8h
C8h
WREAR
Write Extended Address Register
C5h
C5h
3
Issued: JUN. 28, 2012
APPLICATION NOTE
3-1. 4Byte Mode:
Issue Enter 4-Byte mode command to set up the 4BYTE bit in Configuration Register. After 4BYTE bit
has been set, the device enter 4-byte Address mode, the number of address bits become 32-bit.
3-1-1. Micron N25Q256A
Table 3-3. Related Register: Non-volatile Register
Bits
Description
Bit Status
Default Status
Type
Bit15-12
Number of dummy clock cycles
0000 to 1111
1111
Non-volatile
Bit 11-9
XIP mode at power-on reset
000 to 111
111
Non-volatile
Bit 8-6
Output driver strength
000 to 111
111
Non-volatile
X
1
Non-volatile
Bit 5
Reserved
Bit 4
Reset/Hold disable
0 = Disabled
1 = Enabled
1
Non-volatile
Bit 3
QPI enable
0 = Enabled
1 = Disabled
1
Non-volatile
Bit 2
DPI enable
0 = Enabled
1 = Disabled
1
Non-volatile
Bit 1
128Mb segment select
0 = Upper 128Mb segment
1 = Lower 128Mb segment
1
Non-volatile
Bit 0
Address bytes
0 = Enable 4B address
1 = Enable 3B address
1
Non-volatile
Write Enable (WREN): The WRITE ENABLE command (06h) must be issued first before issuing
Enter 4-byte Mode (B7h) and Exit 4Byte Mode (E9) command
Entry 4Byte Mode Method
1. Issue Enter 4-byte Mode (B7h) command to enable 4-byte address mode. The bit 0 (Address
byte) of NVM register should become to “0” after it enters 4-byte mode.
Exit 4Byte Mode
1. Issue Exist 4Byte Mode (E9) command to exit the 4Byte address Mode.
2. H/W Reset or S/W Reset Command.
3. Power-on cycle.
Publication Number: AN155V1
4
Issued: JUN. 28, 2012
APPLICATION NOTE
3-1-2. Macronix MX25L25635F
Table 3-4. Related Register: Configuration Register
Bits
Description
Bit Status
Default Status
Type
Bit7
DC1 (Dummy cycle 1)
0
Volatile
Bit 6
DC0 (Dummy cycle 0)
0
Volatile
Bit 5
4 BYTE
(4Byte address enable)
0=3-byte address mode
1=4-byte address mode
0
Volatile
Bit 4
Reserved
X
X
Volatile
Bit 3
TB (top/bottom selected)
0 = Top
1=Bottom
0
OTP
Bit 2
Bit 1
Bit 0
ODS 2 (output driver strength)
ODS 1 (output driver strength)
ODS 0 (output driver strength)
1
1
1
Volatile
Volatile
Volatile
Write Enable (WREN): No WRITE ENABLE command(06h) is needed before issuing the Enter
4-byte Mode (B7h) and Exist 4Byte Mode (E9) command
Enter 4Byte Mode Method
Using Enter 4-byte Mode (B7h) command to enable 4-byte address mode, the bit 5 (4BYTE) of
Configuration should become to “1” after it enters 4-byte mode. No WREN command is required.
Exit 4Byte Mode
1. Issue Exit 4Byte Mode (E9h) command to exit the 4Byte address Mode.
2. H/W Reset or S/W Reset Command.
3. Power-on cycle.
Publication Number: AN155V1
5
Issued: JUN. 28, 2012
APPLICATION NOTE
3-2. Extended Address Register (EAR)
The Extended Address Register provides the 4th byte of address, which configures the memory device
into two 128Mb segments. Select which one is active through the bit 0 of the Extended Address Register
(EAR). It identifies the extended address (A31~A24) above 128Mb density by using original 3-byte
address.
Macronix MX25L25635F provides compatible EAR operation with Micron N25Q256A device, without
OPcode or setting change.
3-2-1 Micron N25Q256A
Table 3-5. Related Register: Extended Address Register
Bits
Description
7 to 1 A31-A25
0
A24 (Bank address)
Bit Status
0 = Reserved
0 = Lower 128Mb segment
1 = Upper 128Mb segment
Default Status
Type
0000000
Volatile
0
Volatile
1. WREN command is requested for Write Enable latch bit.
2. Using “Write Extended Address Register (C5h)” command to update the Bit 0 (A24) value of
Extended Address Register, which can set extended address A24 for 256Mb device.
3-2-2 Macronix MX25L25635F
Table 3-6. Related Register: Extended Address Register
Bits
Description
7 to 1 A31-A25
0
A24 (Bank address)
Bit Status
0 = Reserved
0 = Lower 128Mb segment
1 = Upper 128Mb segment
Default Status
Type
0000000
Volatile
0
Volatile
1. Macronix MX25L25635F can accept either WREN set or WREN non-set before setting the extended
address register.
2. Using “Write Extended Address Register (C5h)” command to update the Bit 0 (A24) value of Extended Address Register, which can set extended address A24 for 256Mb device.
3. For the 256Mb flash, the A31 to A25 are "Don’t Care", and reading these bits are shown as 0. The
data can be continually read out without the limitation of 128Mb boundary; however, the EAR (Extended Address Register) value does not change.
Publication Number: AN155V1
6
Issued: JUN. 28, 2012
APPLICATION NOTE
3-3. 4Byte Command Set
When issuing 4-byte address command set, 4-byte address (A31-A0) is requested after the instruction
code.
Macronix MX25L25635F provides compatible 4Byte command set with Micron’s N25Q256A device.
Please refer to below table for details of OPcode defintion.
Instruction
4Byte
Command
READ4B
Fast_READ4B
DREAD4B
2READ4B
QREAD4B
4READ4B
PP4B
4PP4B
SE4B
BE4B
BE32K4B
Publication Number: AN155V1
Description
Read Data Bytes
Read Data Bytes at Higher Speed
Dual Output Fast Read
Dual Input/Output Fast Read
Quad Output Fast Read
Quad Input/Output Fast Read
Page Program
Quad page program 1-4-4
Sector Erase
Block Erase 64KB
Block erase 32KB
7
Macronix
MX25L25635F
Micron
N25Q256A
13h
0Ch
3Ch
BCh
6Ch
ECh
12h
3Eh
21h
DCh
5Ch
13h
0Ch
3Ch
BCh
6Ch
ECh
-
Issued: JUN. 28, 2012
APPLICATION NOTE
4. Performance Comparison
Tables below are the performance comparison of the two products.
Table 4-1. Read Performance Comparison
Parameters
Type
VCC
Normal Read
1 I/O
1-in/2-out
Fast
2-in/2-out
Read
1-in/4-out
4-in/4-out
10pf
tCLQV
15pf
30pf
Macronix
MX25L25635F
Micron
N25Q256A
SDR
2.7-3.6V
50MHz
133MHz
133MHz
133MHz
133MHz
133MHz
SDR
2.7-3.6V
54MHz
133MHz
108MHz
108MHz
108MHz
108MHz
5ns
7ns
6ns
8ns
DDR
2.7-3.6V
54MHz
54MHz
54MHz
54MHz
54MHz
6ns
8ns
Table 4-2. Write Performance and Power Consumption Comparison
Macronix
MX25L25635F
Micron
N25Q256A
4KB (typ)
0.03s
0.3s
32KB (typ)
0.19s
-
64KB (typ)
0.34s
0.6s
256B (typ)
0.6ms
0.4ms
Active Write Current (max)
20mA
20mA
Active Read Current (max)
25mA
20mA
Standby Current (typ/max)
30uA/100uA
100uA(max)
Parameters
Erase
Program
Publication Number: AN155V1
8
Issued: JUN. 28, 2012
APPLICATION NOTE
5. Command Code Comparison
Instruction
Type
Read ID
Read
Write
Description
Macronix
MX25L25635F
Micron
N25Q256A
RDID
READ
FAST_READ
DOFR
DIOFR
QOFR
QIOFR
DDRFR
DDRDIOR
DDRQIOR
RDSFDP
WREN
WRDI
PP
4PP
SE
SE 64K
BE 32K
CE
Read Identification
Read Data Bytes
Read Data Bytes at Higher Speed
Dual Output Fast Read
Dual Input/Output Fast Read
Quad Output Fast Read
Quad Input/Output Fast Read
DDR fast Read
DDR dual Input/Output Read
DDR Quad Input/Output Read
Read Serial Flash Discovery Parameter
Write Enable
Write Disable
Page Program
Quad page program
Sector Erase
Block Erase 64KB
Block erase 32KB
Chip Erase
9Fh
03h
0Bh
3B
BBh
6B
EBh
5Ah
06h
04h
02h
38h
20h
D8h
52h
60 or C7h
9Eh/9Fh
03h
0Bh
3Bh
BBh
6Bh
EBh
0Dh
BDh
EDh
5Ah
06h
04h
02h
32h
20h
D8h
C7h
READ4B
13h
13h
0Ch
0Ch
3Ch
3Ch
BCh
BCh
6Ch
6Ch
ECh
ECh
PP4B
4PP4B
SE4B
BE4B
BE32K4B
EN4B
EX4B
Read Data Bytes using 4 Bytes Address
Read Data Bytes at Higher Speed using
4 Bytes Address
Dual Output Fast Read using 4 Byte
Address
Dual Input/Output Fast Read using 4 Byte
Address
Quad Output Fast Read using 4 Byte
Address
Quad Input/Output Fast Read using 4
Byte Address
Page Program
Quad page program 1-4-4
Sector Erase
Block Erase 64KB
Block erase 32KB
Enter 4-byte address mode
Exit 4-byte address mode
12h
3Eh
21h
DCh
5Ch
B7h
E9h
12h
B7h
E9h
RDEAR
Read Extended Address Register
C8h
C8h
WREAR
Write Extended Address Register
C5h
C5h
Instruction
Fast_READ 4B
DREAD4B
2READ4B
4Byte
Command
QREAD4B
4READ4B
4Byte ADD
Approach
Publication Number: AN155V1
9
Issued: JUN. 28, 2012
APPLICATION NOTE
Command Code Comparison - Continued
Instruction
Type
Register
Publication Number: AN155V1
Instruction
Description
Macronix
Micron
MX25L25635F N25Q256A
RDSR
Read Status Register 1
05h
05h
RDCR 2
Read Status Register 2
15h
-
WRSR
Write Status Register
01h
01h
RDSCUR
read security register
2Bh
-
WRSCUR
write security register
2Fh
-
RDLR
Read Lock Register
2Dh
E8h
WRLR
Write to Lock Register
2Ch
E5h
RDSPBLK
SPB Lock Bit Read
A7h
-
SPBLK
SPB Lock Bit Write
A6h
-
RDSPB
SPB Bit Read
E2h
-
WRSPB
SPB Bit Write
E3h
-
ESSPB
SPB Bit Erase
E4h
-
RDPASS
Password Read
27h
-
WRPASS
Password Write
28h
-
PASSULK
Password Unlock
29h
-
RDDPB
DPB Read
E0h
-
WRDPB
DPB Write
E1h
-
RFSR
Read Flag Status Register
-
70h
CLFSR
Clear Flag Status Register
-
50h
RDFBR
Fast Boot Register Read
16h
-
WRFBR
Fast Boot Register Write
17h
-
ESFBR
Fast Boot Register Erase
18h
-
Read Non-volatile configuration register
-
B5h
Write Non-volatile configuration register
-
B1h
Read Volatile configuration register
-
85h
Write Volatile configuration register
-
81h
Read Enhance Volatile configuration register
-
65h
Write Enhance Volatile configuration register
-
61h
10
Issued: JUN. 28, 2012
APPLICATION NOTE
Command Code Comparison - Continued
Instruction
Type
QPI
OTP
Others
Instruction
Description
Macronix
MX25L25635F
Micron
N25Q256A
EQIO
RSTQIO
QPIID
ENSO
EXSO
ROTP
POTP
PGM/ERS Suspend
Enable QPI
Reset QPI
QPI ID Read
enter secured OTP
exit secured OTP
Read OTP (Read of OTP area)
Program OTP (Program of OTP area)
PGM/ERS Suspend
35h
F5h
Afh
B1h
C1h
B0h
4Bh
42h
75h
PGM/ERS Resume
PGM/ERS Resume
30h
7Ah
RSTEN
Reset Enable
66h
66h
RST
Reset Memory
99h
99h
6. References
The following datasheets were used for preparing this comparison note:
Datasheet
Location
Date Issued
Version
MX25L25635F
Macronix Website
MAY 2012
0.01
N25Q256A
Micron Website
JAN. 2012
I
For more functional and parametric specifications, please refer to the datasheet on the Macronix
Website at http://www.macronix.com/ and go to: Products/Flash Memory/Serial Flash.
Publication Number: AN155V1
11
Issued: JUN. 28, 2012
APPLICATION NOTE
Except for customized products which have been expressly identified in the applicable agreement, Macronix's products are
designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or household applications only, and
not for use in any applications which may, directly or indirectly, cause death, personal injury, or severe property damages. In the
event Macronix products are used in contradicted to their target usage above, the buyer shall take any and all actions to ensure
said Macronix's product qualified for its actual use in accordance with the applicable laws and regulations; and Macronix as well
as it’s suppliers and/or distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2011~2012. All rights reserved, including the trademarks and tradename thereof,
such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit, NBiit, Macronix NBit, eLiteFlash,
HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC, Kingtech, MXSMIO, Macronix vEE, Macronix MAP,
Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names and brands of third party referred thereto (if any) are for identification
purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
Publication Number: AN155V1
12
Issued: JUN. 28, 2012