IRLML6344TRPbF
HEXFET® Power MOSFET
VDS
30
V
VGS Max
± 12
V
29
mΩ
RDS(on) max
(@VGS = 4.5V)
RDS(on) max
37
(@VGS = 2.5V)
G 1
3 D
S
mΩ
Micro3TM (SOT-23)
IRLML6344TRPbF
2
Application(s)
• Load/ System Switch
Features and Benefits
Benefits
Low RDSon (<29mΩ)
Lower Conduction Losses
Industry-standard SOT-23 Package
Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen
results in
Environmentally friendly
MSL1, Consumer Qualification
Base Part Number
IRLML6344TRPbF
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
3000
Package Type
Micro3™(SOT-23)
Orderable Part Number
IRLML6344TRPbF
Absolute Maximum Ratings
Max.
Units
VDS
Symbol
Drain-Source Voltage
Parameter
30
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.0
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
4.0
IDM
Pulsed Drain Current
25
PD @TA = 25°C
Maximum Power Dissipation
1.3
PD @TA = 70°C
Maximum Power Dissipation
0.8
A
W
Linear Derating Factor
0.01
W/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
e
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient (t<10s)
f
Typ.
Max.
–––
100
–––
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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IRLML6344TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Min. Typ. Max. Units
30
–––
–––
–––
0.02
–––
–––
22
29
–––
27
37
0.5
0.8
1.1
–––
–––
1.0
–––
–––
150
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
V
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
mΩ
V
μA
nA
VGS = 2.5V, ID
VDS = VGS, ID = 10μA
VDS =24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
RG
Internal Gate Resistance
–––
1.7
–––
Ω
gfs
Forward Transconductance
19
–––
–––
S
Qg
Total Gate Charge
–––
6.8
–––
Qgs
Gate-to-Source Charge
–––
0.3
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.4
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
4.2
–––
VDD =15V
tr
Rise Time
–––
5.6
–––
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
9.1
–––
Ciss
Input Capacitance
–––
650
–––
Coss
Output Capacitance
–––
65
–––
Crss
Reverse Transfer Capacitance
–––
46
–––
d
= 4.0A d
VGS = 4.5V, ID = 5.0A
VDS = 10V, ID = 5.0A
ID = 5.0A
nC
ns
VDS =15V
d
d
ID = 1.0A
RG = 6.8Ω
VGS = 4.5V
VGS = 0V
pF
VDS = 25V
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
c
(Body Diode)
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
25
Conditions
MOSFET symbol
A
D
showing the
G
integral reverse
p-n junction diode.
S
VSD
Diode Forward Voltage
–––
–––
1.2
V
TJ = 25°C, IS = 5.0A, VGS = 0V
trr
Reverse Recovery Time
–––
10
15
ns
TJ = 25°C, VR = 15V, IF=1.3A
Qrr
Reverse Recovery Charge
–––
3.8
5.7
nC
di/dt = 100A/μs
d
d
Notes through are on page 10
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IRLML6344TRPbF
100
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
1
1.4V
10
BOTTOM
1.4V
1
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60μs PULSE WIDTH
0.1
ID = 5.0A
VGS = 4.5V
1.5
1.0
0.5
1.0
1.5
2.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
10V
4.5V
2.5V
2.0V
1.9V
1.7V
1.5V
1.4V
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2.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLML6344TRPbF
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + Cgd, C ds SHORTED
ID= 5.0A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C, Capacitance (pF)
C oss = C ds + Cgd
1000
Ciss
Coss
Crss
100
VDS= 6.0V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
0.0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
ID, Drain-to-Source Current (A)
10
T J = 150°C
1
T J = 25°C
VGS = 0V
0.5
0.6
0.7
0.8
0.9
12.0
16.0
20.0
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
1msec
10
100μsec
1
0.1
T A = 25°C
Tj = 150°C
Single Pulse
10msec
0.01
0.1
0.4
8.0
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
ISD, Reverse Drain Current (A)
4.0
QG, Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
4
VDS= 24V
VDS= 15V
12.0
1.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML6344TRPbF
5.0
RD
V DS
VGS
ID , Drain Current (A)
4.0
D.U.T.
RG
+
- VDD
3.0
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
1000
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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100
IRLML6344TRPbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on), Drain-to -Source On Resistance (m Ω)
70
ID = 5.0A
60
50
40
T J = 125°C
30
20
T J = 25°C
10
0
1
2
3
4
5
6
7
8
9 10 11 12
80
60
40
Vgs = 2.5V
20
Vgs = 4.5V
0
0
10
20
30
40
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Id
Vds
Vgs
L
Vgs(th)
Qgodr
Qgd
0
20K
1K
VCC
S
Qgs2 Qgs1
Fig 14a. Basic Gate Charge Waveform
6
DUT
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Fig 14b. Gate Charge Test Circuit
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IRLML6344TRPbF
100
1.0
80
0.8
0.6
0.4
Power (W)
VGS(th), Gate threshold Voltage (V)
1.2
ID = 10μA
ID = 250μA
60
40
20
0.2
0
0.0
-75 -50 -25
0
25
50
75 100 125 150
1E-005 0.0001
0.001
T J , Temperature ( °C )
Fig 15. Typical Threshold Voltage Vs.
Junction Temperature
7
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0.01
0.1
1
Time (sec)
Fig 16. Typical Power Vs. Time
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IRLML6344TRPbF
Micro3™(SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
A
6
DIMENSIONS
5
SYMBOL
D
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
A
A2
3
6
C
E
E1
1
2
0.15 [0.006] M C B A
0.10 [0.004] C
A1
5
B
3X b
e
0.20 [0.008] M C B A
NOTES:
e1
H 4
L1
Recommended Footprint
c
L2
0.972
0.950
0.802
MILLIMETERS
INCHES
MIN
MAX
MIN
0.89
0.01
0.88
0.30
0.08
2.80
2.10
1.20
0.95
1.90
0.40
0.54
0.25
0
1.12
0.10
1.02
0.50
0.20
3.04
2.64
1.40
BSC
BSC
0.60
REF
BSC
8
MAX
0.0004 %6&
%6&
REF
BSC
0
8
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
3X L
7
1.900
Micro3™(SOT-23) Part Marking Information
Notes : This part marking information applies to devices produced after 02/26/2001
DATE CODE MARKING INSTRUCTIONS
DAT E CODE
PART NUMBER
LEAD F REE
WW = (1-26) IF PRECE DE D BY LAS T DIGIT OF CALE NDAR YEAR
YE AR
Cu WIRE
HALOGEN F REE
LOT CODE
X = PART NUMBER CODE REF ERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRF ML8244
X = IRLML2244
Y = IRLML2246
Z = IRF ML9244
Note: A line above the work week
(as s hown here) indicates Lead - F ree.
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
1
2
3
4
5
6
7
8
9
0
WORK
WE EK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
WW = (27-52) IF PRE CEDED BY A LET T ER
YE AR
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WE EK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLML6344TRPbF
Micro3™(SOT-23) Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRLML6344TRPbF
Qualification information
†
Consumer ††
Qualification level
Moisture Sensitivity Level
(per JEDEC JESD47F
Micro3™(SOT-23)
RoHS compliant
†††
guidelines )
MSL1
†††
(per IPC/JEDEC J-STD-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Surface mounted on 1 in square Cu board
Refer to application note #AN-994.
Revision History
Date
Comment
12/19/2014
• Formatted the data sheet using the IR Corporate template.
• Updated part marking on page 8.
• Corrected Typical Output curve Fig.2 on page 3 (used to be exact same as Fig.1)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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