IRF IRFH4213DPBF

IRFH4213DPbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
(@ VGS = 10V)
(@ VGS = 4.5V)
25
V
1.35
m
1.90
Qg (typical)
25
nC
ID
(@TC (Bottom) = 25°C)
100
A
PQFN 5X6 mm
Applications
 Synchronous Rectifier MOSFET for Synchronous Buck Converters
Features
Low RDSon (<1.35m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.3°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Base part number
Package Type
IRFH4213DPbF
PQFN 5mm x 6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
Multi-Vendor Compatibility

Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4213DTRPbF
Absolute Maximum Ratings
Max.
Units
VGS
Gate-to-Source Voltage
Parameter
± 20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
40
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
208
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
131
ID @ TC(Bottom) = 25°C
100
IDM
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current 
PD @TA = 25°C
Power Dissipation 
3.6
PD @TC(Bottom) = 25°C
Power Dissipation
96
Linear Derating Factor 
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
400
0.029
-55 to + 150
W
W/°C
°C
Notes  through  are on page 8
1
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© 2013 International Rectifier
May 20, 2013
IRFH4213DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
BVDSS/TJ
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
VGS(th)
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy 
IAR
Avalanche Current 
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Thermal Resistance
Parameter
RJC (Bottom) Junction-to-Case 
Junction-to-Case 
RJC (Top)
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
340
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
1.10
1.50
1.6
-4.5
–––
–––
–––
–––
55
25
9.4
4.1
9.4
2.1
13.5
27
1.5
14
30
18
12
3520
1070
250
Max.
–––
–––
1.35
1.90
2.1
–––
250
100
-100
–––
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
VGS = 0V, ID = 1.0mA
mV/°C Reference to 25°C, ID = 10mA
m VGS = 10V, ID = 50A 
VGS = 4.5V, ID = 50A 
V
VDS = VGS, ID = 100µA
mV/°C VDS = VGS, ID = 10mA
µA VDS = 20V, VGS = 0V
nA VGS = 20V
VGS = -20V
S
VDS = 10V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
nC
nC

VDS = 13V
VGS = 4.5V
ID = 50A
VDS = 16V, VGS = 0V
ns
VDD = 13V, VGS = 4.5V
ID = 50A
RG=2.0
pF
VGS = 0V
VDS = 13V
ƒ = 1.0MHz
Typ.
–––
–––
Min.
–––
Typ.
–––
–––
–––
–––
–––
–––
–––
26
35
Max.
180
50
Max. Units
Conditions
100
A
MOSFET symbol
showing the
integral reverse
400
p-n junction diode.
0.8
V
TJ = 25°C, IS = 50A, VGS = 0V 
37
ns TJ = 25°C, IF = 50A, VDD = 13V
53
nC di/dt = 260A/µs 
D
G
S
Typ.
–––
Max.
1.3
Units
–––
21
°C/W
RJA
Junction-to-Ambient 
–––
35
RJA (<10s)
Junction-to-Ambient 
–––
21
2
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© 2013 International Rectifier
May 20, 2013
IRFH4213DPbF
1000
1000
100
BOTTOM
10
1
2.5V
 60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
0.1
100
BOTTOM
10
2.5V
 60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.8
100
TJ = 150°C
10
TJ = 25°C
1
V DS = 15V
60µs PULSE WIDTH
1.5
2.0
2.5
3.0
3.5
4.0
ID = 50A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.1
-60 -40 -20
4.5
40
60
80 100 120 140 160
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORT ED
Crss = C gd
Coss = Cds + Cgd
10000
Ciss
Coss
1000
20
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
0
T J , Junction Temperature (°C)
V GS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Crss
ID= 50A
12
VDS= 20V
VDS= 13V
VDS= 5.0V
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
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© 2013 International Rectifier
0
10
20
30
40
50
60
70
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
May 20, 2013
IRFH4213DPbF
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
100
T J = 150°C
10
T J = 25°C
1
100µsec
1msec
100
10msec
Limited by
Package
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0.1
1.2
1
10
100
VDS, Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.5
240
VGS(th) Gate threshold Voltage (V)
Limited By Package
ID, Drain Current (A)
200
160
120
80
40
2.0
1.5
ID = 100µA
ID = 250µA
1.0
ID = 1.0mA
ID = 10mA
0.5
ID = 1.0A
0.0
0
25
50
75
100
125
-75
150
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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© 2013 International Rectifier
May 20, 2013
6
800
ID = 50A
EAS, Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance ( m )
IRFH4213DPbF
5
4
3
T J = 125°C
2
1
T J = 25°C
0
0
4
8
12
16
I D
13A
26A
BOTT OM 50A
T OP
600
400
200
0
20
25
VGS, Gate-to-Source Voltage (V)
50
75
100
125
150
Starting T J, Junction Temperature (°C)
Fig 12. On– Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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© 2013 International Rectifier
May 20, 2013
IRFH4213DPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V (B R )D S S
tp
15V
L
VDS
D .U .T
RG
IA S
D R IV E R
+
VD D
-
A
20V
tp
0 .0 1 
Fig 16a. Unclamped Inductive Test Circuit
Fig 17a. Switching Time Test Circuit
IAS
Fig 16b. Unclamped Inductive Waveforms
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
V g s(th )
Q g s1 Q g s2
Fig 18. Gate Charge Test Circuit
6
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© 2013 International Rectifier
Q gd
Q godr
Fig 19. Gate Charge Waveform
May 20, 2013
IRFH4213DPbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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© 2013 International Rectifier
May 20, 2013
IRFH4213DPbF
PQFN 5x6 Outline "B" Tape and Reel
CL
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F†† guidelines)
PQFN 5mm x 6mm
Moisture Sensitivity Level
MSL1
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:





Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 50A.
Pulse width  400µs; duty cycle  2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
 Calculated continuous current based on maximum allowable junction temperature.
 Current is limited to 100A by source bonding technology.
Revision History
Date
05/20/2013
04/10/2013

Comments
Updated package 3D drawing, on page 1.

Added Continuous Drain Current limited by source bonding technology, on page 1.

Divided note 6 into note 6 & 7, on page 8.

Release of final data sheet.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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© 2013 International Rectifier
May 20, 2013