IRG7PH42UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • • • • • • • • • C Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package VCES = 1200V IC = 45A, TC = 100°C TJ(max) = 150°C G VCE(on) typ. = 1.7V @IC= 30A E n-channel Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI G C G TO-247AD G Gate Base part number Package Type IRG7PH42UD1MPbF TO-247AD E C Collector Standard Pack Form Tube E Emitter Orderable Part Number Quantity 25 IRG7PH42UD1MPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage V(BR) Transient Repetitive Transient Collector-to-Emitter Voltage Max. i g IC @ TC = 25°C Continuous Collector Current 85 Continuous Collector Current 45 ICM Pulse Collector Current, VGE=15V ILM Clamped Inductive Load Current, VGE 200 =20V c IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C Diode Continous Forward Current IFRM Diode Repetitive Peak Forward Current V 1300 IC @ TC = 100°C dh Units 1200 A 120 70 35 d 120 VGE Continuous Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 313 PD @ TC = 100°C Maximum Power Dissipation 125 TJ Operating Junction and TSTG Storage Temperature Range V W -55 to +150 °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. ––– ––– 0.4 ––– ––– 1.05 RθJC (Diode) f Thermal Resistance Junction-to-Case-(each Diode) f RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 ––– RθJC (IGBT) 1 Thermal Resistance Junction-to-Case-(each IGBT) www.irf.com © 2012 International Rectifier Units °C/W April 26, 2012 IRG7PH42UD1MPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. 1200 — — — 1.2 — — 1.7 2.0 — 2.0 — Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, I C = 1.0mA gfe Forward Transconductance — 32 — S VCE = 50V, IC = 30A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 1.0 100 — 230 — — 1.15 1.30 — 1.10 — — — ±100 V(BR)CES Collector-to-Emitter Breakdown Voltage Δ V(B R )CES /ΔT J Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) VFM Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current Max. Units V Conditions VGE = 0V, IC = 100μA e V/°C VGE = 0V, IC = 2.0mA (25°C-150°C) V μA V nA I C = 30A, VGE = 15V, TJ = 25°C I C = 30A, VGE = 15V, TJ = 150°C VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C I F = 30A I F = 30A, TJ = 150°C VGE = ±30V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Min. Typ. — 180 Max. Units 270 Qge Gate-to-Emitter Charge (turn-on) — 24 36 Qgc Gate-to-Collector Charge (turn-on) — 70 110 Eoff Turn-Off Switching Loss — 1210 1450 td(off) Turn-Off delay time — 270 290 tf Fall time — 35 43 Eoff Turn-Off Switching Loss — 1936 — Conditions I C = 30A nC VGE = 15V V CC = 600V I C = 30A, VCC = 600V, VGE = 15V μJ RG = 10Ω, L = 200μH,TJ = 25°C Energy losses include tail ns I C = 30A, VCC = 600V, VGE = 15V RG = 10Ω, L = 200μH,TJ = 25°C I C = 30A, VCC = 600V, VGE = 15V μJ RG = 10Ω, L = 200μH,TJ = 150°C Energy losses include tail td(off) Turn-Off delay time — 300 — tf Fall time — 160 — RG = 10Ω, L = 200μH, TJ = 150°C Cies Input Capacitance — 3390 — VGE = 0V Coes Output Capacitance — 130 — Cres Reverse Transfer Capacitance — 83 — RBSOA Reverse Bias Safe Operating Area ns pF I C = 30A, VCC = 600V, VGE = 15V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 120A FULL SQUARE VCC = 960V, Vp =1200V Rg = 10Ω, VGE = +20V to 0V Notes: VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. FBSOA operating conditions only VGE = 0V, TJ = 75°C, PW ≤ 10μs. 2 www.irf.com © 2012 International Rectifier April 26, 2012 IRG7PH42UD1MPbF 350 100 LIMITED BY PACKAGE 250 60 Ptot (W) IC, Collector Current (A) 300 80 40 200 150 100 20 50 0 0 25 50 75 100 125 150 25 50 75 150 Fig. 2 - Power Dissipation vs. Case Temperature 1.0 1000 IC = 1.0mA 0.9 100 0.8 0.7 10 0.6 0.5 1 25 50 75 100 125 150 10 100 1000 TJ , Temperature (°C) 10000 VCE (V) Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V 120 120 V GE = 18V V GE = 18V 100 V GE = 12V V GE = 12V V GE = 10V 80 V GE = 10V ICE (A) V GE = 8.0V 60 V GE = 15V 100 V GE = 15V 80 ICE (A) 125 IC (A) V GE(th), Gate Threshold Voltage (Normalized) Fig. 1 - Maximum DC Collector Current vs. Case Temperature V GE = 8.0V 60 40 40 20 20 0 0 0 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 3 100 TC (°C) TC, Case Temperature (°C) www.irf.com © 2012 International Rectifier 0 2 4 6 8 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs April 26, 2012 IRG7PH42UD1MPbF 140 120 VGE = 18V VGE = 15V 100 80 25°C 150°C 100 VGE = 8.0V IF (A) ICE (A) 120 VGE = 12V VGE = 10V 60 40 80 60 40 20 20 0 0 0 2 4 6 8 0.0 10 0.5 1.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 20 20 18 18 16 16 14 14 ICE = 15A ICE = 30A VCE (V) VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80μs 10 ICE = 60A 8 12 ICE = 15A ICE = 30A 10 8 ICE = 60A 6 6 4 4 2 2 0 0 5 10 15 5 20 10 15 20 VGE (V) VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 120 ICE, Collector-to-Emitter Current (A) 18 16 14 VCE (V) 2.0 VF (V) V CE (V) 12 1.5 12 ICE = 15A 10 ICE = 30A 8 ICE = 60A 6 4 100 80 TJ = 25°C TJ = 150°C 60 40 20 2 0 0 5 10 15 20 V GE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 4 www.irf.com © 2012 International Rectifier 2 4 6 8 10 VGE, Gate-to-Emitter Voltage (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs April 26, 2012 IRG7PH42UD1MPbF 5000 1000 4000 Swiching Time (ns) EOFF Energy (μJ) 3000 2000 tdOFF tF 1000 100 0 0 10 20 30 40 50 60 0 70 I C (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V 10 20 60 70 tdOFF 4500 Swiching Time (ns) Energy (μJ) 50 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V 5500 EOFF 3500 1000 100 tF 2500 10 1500 0 25 50 75 100 0 125 20 40 60 80 100 120 RG (Ω) RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V 10000 16 VGE, Gate-to-Emitter Voltage (V) Cies Capacitance (pF) 40 IC (A) 10000 6500 1000 Coes 100 Cres 10 14 V CES =600V 12 V CES = 400V 10 8 6 4 2 0 0 20 40 60 80 100 VCE (V) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 30 www.irf.com © 2012 International Rectifier 0 50 100 150 200 Q G, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 30A; L = 680μH April 26, 2012 IRG7PH42UD1MPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 τJ R1 R1 τJ τ1 1E-005 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 τ4 τi (sec) Ri (°C/W) R4 R4 τ4 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 R2 R2 0.1306 0.000313 0.1752 0.002056 0.0814 0.008349 0.0031 0.0431 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.10 τJ 0.05 0.02 0.01 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri 1E-005 0.0001 τ4 0.01186 0.00001 0.39298 0.000547 0.43450 0.003563 0.22096 0.021596 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τ4 τi (sec) Ri (°C/W) R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2012 International Rectifier April 26, 2012 IRG7PH42UD1MPbF L L DUT 0 80 V + VCC - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit C force diode clamp / DUT 100K L D1 -5V 22K C sense DUT / DRIVER VCC DUT G force 0.0075μF Rg E sense E force Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 800 80 tf 70 600 60 500 50 400 40 90% ICE 300 30 200 ICE (A) VCE (V) 700 20 5% VCE 100 5% ICE 10 0 0 Eoff Loss -100 -1 -0.5 0 0.5 1 -10 1.5 2 time(μs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 7 www.irf.com © 2012 International Rectifier April 26, 2012 IRG7PH42UD1MPbF TO-247AD Package Outline (Dimensions are shown in millimeters (inches)) E Q A A E2/2 "A" A2 E2 2X D B L1 "A" L S EE VIE W "B" 2x b2 3x b Ø .010 B A c b4 e A1 2x LEAD TIP ØP Ø .010 B A -A- S D1 VIEW: "B" THERMAL PAD PLAT ING BAS E MET AL E1 Ø .010 (c) B A VIEW: "A" - "A" (b, b2, b4) SECT ION: C-C, D-D, E-E TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN THE AS S EMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" INTERNAT IONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2012 International Rectifier April 26, 2012 IRG7PH42UD1MPbF † Qualification information † Industrial Qualification level †† (per JE DEC JES D47F ) Moisture Sensitivity Level RoHS compliant N/A TO-247AD Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date 4/25/2013 Comments Corrected part number from "IRG7PH42UD1M" to "IRG7PH42UD1MPbF". Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9 www.irf.com © 2012 International Rectifier April 26, 2012