LESHAN RADIO COMPANY, LTD. SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY LBAT54TW1T1G S-LBAT54TW1T1G These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 6 5 4 • Extremely Fast Switching Speed 1 2 • Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring 3 SC-88 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping KLA 3000/Tape&Reel KLA 10000/Tape&Reel LBAT54TW1T1G S-LBAT54TW1T1G LBAT54TW1T3G S-LBAT54TW1T3G TOP VIEW MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PD 225 2.0 mW mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Tstg – 55 to +150 °C Storage Temperature Range ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Symbol Min Typ Max Unit V(BR)R 30 — — Volts Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT — — 10 pF Reverse Leakage (VR = 25 V) IR — 0.5 2.0 µAdc Forward Voltage (IF = 0.1 mAdc) VF — 0.22 0.24 Vdc Forward Voltage (IF = 30 mAdc) VF — 0.41 0.5 Vdc Forward Voltage (IF = 100 mAdc) VF — 0.52 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 trr — — 5.0 ns Forward Voltage (IF = 1.0 mAdc) VF — 0.29 0.32 Vdc Forward Voltage (IF = 10 mAdc) VF — 0.35 0.40 Vdc Forward Current (DC) IF — — 200 mAdc Repetitive Peak Forward Current IFRM — — 300 mAdc Non–Repetitive Peak Forward Current (t < 1.0 s) IFSM — — 600 mAdc Rev.B 1/3 LESHAN RADIO COMPANY, LTD. LBAT54TW1T1G , S-LBAT54TW1T1G 820 Ω +10 V 2k 0.1 µF tp tr IF 100 µH 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Fig.1 RECOVERY TIME EQUIVALENT TEST CIRCUIT 100 REVERSE CURRENT :IR(uA) FORWARD CURRENT:IF(mA) 100 10 1 10 1 0.1 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 FORWARD VOLTAGE:VF(V) -55℃ 25℃ 75℃ 10 15 20 25 30 35 REVERSE VOLTAGE:VR(V) 100℃ 125℃ Fig.2 FORWARD CHARACTERISTICS -55℃ 25℃ 75℃ 100℃ 125℃ Fig.3 REVERSE CHARACTERISTICS 12 TERMINAL CAPACITANCE : CT (pF) f=1MHz 10 8 6 4 2 0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE:VR(V) Fig.4 VR-CT CHARACTERISTICS Rev.B 2/3 LESHAN RADIO COMPANY, LTD. LBAT54TW1T1G , S-LBAT54TW1T1G SC-88 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4.EMITTER 1 5. BASE 1 6.COLLECTOR 2 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm Rev.B 3/3