CS19-12ho1S

CS19-12ho1S
High Efficiency Thyristor
VRRM
=
1200 V
I TAV
=
20 A
VT
=
1,31 V
Single Thyristor
Part number
CS19-12ho1S
Backside: anode
4/2
1
3
Features / Advantages:
Applications:
Package: TO-263 (D2Pak)
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CS19-12ho1S
Ratings
Thyristor
Conditions
Symbol
VRSM/DSM
Definition
max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
VRRM/DRM
max. repetitive reverse/forward blocking voltage
TVJ = 25°C
1200
I R/D
reverse current, drain current
VT
forward voltage drop
TVJ = 25°C
50
µA
1
mA
TVJ = 25°C
1,32
V
1,65
V
1,31
V
IT =
20 A
IT =
40 A
IT =
20 A
IT =
40 A
I T(RMS)
RMS forward current
180° sine
VT0
threshold voltage
rT
slope resistance
R thJC
thermal resistance junction to case
TVJ = 125 °C
for power loss calculation only
thermal resistance case to heatsink
total power dissipation
I TSM
max. forward surge current
value for fusing
V
TVJ = 125°C
TC = 110 °C
RthCH
max. Unit
1300
V
VR/D = 1200 V
average forward current
Ptot
typ.
VR/D = 1200 V
I TAV
I²t
min.
1,73
V
T VJ = 125 °C
20
A
31
A
TVJ = 125 °C
0,86
V
22
mΩ
0,7 K/W
0,50
K/W
TC = 25°C
170
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
180
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
195
A
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
155
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
165
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
160
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
160
A²s
t = 10 ms; (50 Hz), sine
TVJ = 125 °C
120
A²s
115
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
CJ
junction capacitance
VR = 230 V f = 1 MHz
TVJ = 25°C
PGM
max. gate power dissipation
t P = 30 µs
T C = 125 °C
9
t P = 300 µs
PGAV
average gate power dissipation
(di/dt) cr
critical rate of rise of current
TVJ = 150 °C; f = 50 Hz
repetitive, IT =
t P = 200 µs; di G /dt = 0,15 A/µs;
60 A
I G = 0,15 A; V = ⅔ VDRM
20 A
(dv/dt)cr
critical rate of rise of voltage
V = ⅔ VDRM
VGT
gate trigger voltage
I GT
gate trigger current
VGD
gate non-trigger voltage
I GD
gate non-trigger current
IL
latching current
non-repet., I T =
pF
5
W
2,5
W
0,5
W
150 A/µs
500 A/µs
TVJ = 150°C
500 V/µs
VD = 6 V
TVJ = 25 °C
1,5
TVJ = -40 °C
2,5
V
VD = 6 V
TVJ = 25 °C
28
mA
TVJ = -40 °C
50
mA
TVJ = 150°C
0,2
V
3
mA
TVJ = 25 °C
75
mA
R GK = ∞; method 1 (linear voltage rise)
VD = ⅔ VDRM
tp =
10 µs
IG =
0,1 A; di G /dt =
V
0,1 A/µs
IH
holding current
VD = 6 V R GK = ∞
TVJ = 25 °C
50
mA
t gd
gate controlled delay time
VD = ½ VDRM
TVJ = 25 °C
2
µs
tq
turn-off time
IG =
0,1 A; di G /dt =
0,1 A/µs
VR = 100 V; I T = 20 A; V = ⅔ VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
150
µs
20 V/µs t p = 200 µs
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CS19-12ho1S
Package
Ratings
TO-263 (D2Pak)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
35
Unit
A
-40
125
°C
-40
100
°C
150
°C
2
Weight
FC
20
mounting force with clip
g
60
N
Product Marking
XXXXXXXXX
Part No.
IXYS Zyyww
Logo
Assembly Line
Date Code
000000
Assembly Code
Ordering
Standard
Ordering Number
CS19-12ho1S
Similar Part
CS19-12ho1
CS19-08ho1
CS19-08ho1S
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-220AB (3)
TO-220AB (3)
TO-263AB (D2Pak) (2)
* on die level
Delivery Mode
Tape & Reel
Quantity
800
Code No.
501313
Voltage class
1200
800
800
T VJ = 125 °C
Thyristor
V 0 max
threshold voltage
0,86
R0 max
slope resistance *
19
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Marking on Product
CS19-12ho1S
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CS19-12ho1S
Outlines TO-263 (D2Pak)
Dim.
W
A
A1
H
D
E
Supplier
Option
D1
L1
c2
4
L
L2
1 2 3
c
2x e
3x b2
10.92
(0.430)
mm (Inches)
2x b
E1
9.02
(0.355)
W
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
2.54 (0.100)
Recommended min. foot print
4/2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CS19-12ho1S
Thyristor
60
160
1000
50 Hz, 80% VRRM
VR = 0 V
140
40
120
IT
2
It
TVJ = 45°C
ITSM
2
100
[A]
20
TVJ = 45°C
100
[A s]
TVJ = 125°C
[A]
125°C
150°C
TVJ = 125°C
80
TVJ = 25°C
0
0,5
60
1,0
1,5
2,0
10
2,5
0,01
0,1
VT [V]
Fig. 1 Forward characteristics
100
1
1
3
4 5 6 7 8 910
t [s]
t [ms]
Fig. 2 Surge overload current
Fig. 3 I t versus time (1-10 ms)
2
1000
1: IGD, TVJ = 150°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
2
40
dc =
1
0.5
0.4
0.33
0.17
0.08
30
10
100
VG
5
3
[µs]
1
1
IT(AV)M
Limit
20
4
2
[V]
typ.
tgd
6
[A]
10
TVJ = 125°C
10
4: PGAV = 0.5 W
0,1
5: PGM = 2.5 W
6: PGM = 5 W
IGD, TVJ = 125°C
1
10
100
1
10
1000
0
100
1000
0
25
IG [mA]
IG [mA]
75 100 125 150 175
TC [°C]
Fig. 5 Gate controlled delay time
Fig. 4 Gate trigger characteristics
50
Fig. 6 Max. forward current
at case temperature
0,8
dc =
1
0.5
0.4
0.33
0.17
0.08
40
30
RthHA
0.6
0.8
1.0
2.0
4.0
8.0
P(AV)
0,6
ZthJC
0,4
20
[K/W]
[W]
0,2
10
0
0
10
20
IT(AV) [A]
0
50
100
0,0
100
150
Tamb [°C]
© 2015 IXYS all rights reserved
102
ti [s]
0.10
0.08
0.01
0.0011
0.18
0.17
0.17
0.025
0.32
0.09
103
104
t [ms]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
101
Rthi [K/W]
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b