LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to capacitance ratio and narrow range of low value IDSS provide solutions for low noise applications which cannot tolerate high values of capacitance or wide ranges of IDSS. The narrow ranges of IDSS binning with the 2SK170 / LSK170 promote ease of design tolerancing, particularly in low voltage applications. The 2SK170 / LSK170 is ideal for portable battery operated applications, and features high BVDSS for maximum linear headroom in high transient program content amplifiers. The 2SK170 / LSK170 series has a uniquely linear VGS transfer function for a stability that is highly desirable, particularly for audio front-end preamplifiers. 2SK170 / LSK170 Applications: Audio – Amps, effects boxes, microphones Instrumentation– Input stages Acoustic Sensors – Sonobuoys Military – Antisubmarine, personnel + vehicle detectors, sonar, radiation detectors… FEATURES ULTRA LOW NOISE ( f = 1kHz) en = 0.9nV / √ Hz (typ) HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = ‐500pA max LOW CAPACITANCE 22pF max IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170 ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation @ + 125°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain ‐65°C to +150°C ‐55°C to +135°C 400mW IG(F) = 10mA VGSS = 40V VGDS = 40V FOR EQUIVALENT DUAL VERSION, SEE LSK389 www.micross.com/pdf/LSM_LSK389A_SOIC.pdf Click To Buy ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage 40 VGS(OFF) Gate to Source Pinch‐off Voltage 0.2 VGS Gate to Source Operating Voltage ‐‐ Drain to Source 2SK170A / LSK170A 2.6 IDSS Saturation 2SK170B / LSK170B 6 Current 2SK170C / LSK170C 10 IG Gate Operating Current ‐‐ IGSS Gate to Source Leakage Current ‐‐ Yfss Full Conduction Transconductance ‐‐ Yfs Typical Conduction Transconductance ‐‐ en Noise Voltage ‐‐ en Noise Voltage ‐‐ CISS Common Source Input Capacitance ‐‐ CRSS Common Source Reverse Transfer ‐‐ Capacitance TYP. ‐‐ ‐‐ 0.5 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 22 10 0.9 2.5 20 5 MAX. ‐‐ 2 ‐‐ 6.5 12 20 0.5 1 ‐‐ ‐‐ 1.9 4 ‐‐ ‐‐ Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired Available Packages: UNITS V V V mA nA nA mS mS nV/√Hz nV/√Hz pF pF CONDITIONS VDS = 0, ID = 100µA VDS = 10V, ID = 1nA VDS = 10V, ID = 1mA VDG = 10V, VGS = 0V VDG = 10V, ID = 1mA VDG = 10V, VDS = 0 VGD = 10V, VGS = 0V, f = 1kHz VGD = 15V, ID = 1mA VDS = 10V, ID = 2mA, f = 1kHz, NBW = 1Hz VDS = 10V, ID = 2mA, f = 10Hz, NBW = 1Hz VDS = 10V, VGS = 0V, f = 1MHz VDS = 15V, ID = 500µA SOT-23 (Top View) LSK170 in SOT-23 LSK170 available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.