RoHS RoHS 4100PT Series SEMICONDUCTOR Phase Control Thyristors Features E TYPE 1. Center amplifying gate. 2. Metal Case With Ceramic insulator. 3. Typical application DC motor control Controlled DC power supplies AC controllers 73.2 (2.88)DIA. MAX. 35 (1.48) MAX. 99 (3.90)DIA. MAX. 12 E 0 (1) (2) (3) (4) (5) (1) Maximum average on-state current , A (2) For Phase Control Thyristor ll (3) Voltage code , code x 100 = VRRM / VDRM (4) package style : A , B , C , D ,E ,EX for Disc Type 20 (5) Terminal types 0 - for eyelet l All dimensions in millimeters ( inches ) Electrical Characteristics Symbol I T(AV) Parameter Mean on-state current I T(RMS) Max. RMS on-state current V RRM V DRM I TSM 2 l PT l 4100 112 (4.41)DIA.MAX. Ordering code Condition Value Type Max. Unit 180 half sine wave , 50Hz Double side cooled , T hs = 55 C 4100 A Double side cooled , T hs =25 C 8161 A 1200 V Repetitive peak off-state voltage Repetitive peak reverse voltage V DRM & V RRM t p =10ms V DsM & V RsM = V DRM & V RRM + 100V Surge on-state current 10 ms half sine wave V R = 0.6V RRM For fusing coordination Min. 800 60 KA 6 2 20.5 A sx10 Threshold voltage 0.85 V rt On-state slope resistance 0.07 mΩ V TM Max. Forward voltage drop ITM=3000A 1.55 V Holding current T j =25 C 1000 mA 150 A/μ s 200 mA I t VO IH d iT/dt Cirtical rate of rise of turned-on current I RRM I DRM Repetitive peak reverse current V R =V RRM V D =V DRM Cirtical rate of rise of off-state voltage V DM =0.67 V DRM d v/dt PG Mean forward gate power I GT Gate trigger current V GT Gate trigger voltage V GD DC voltage notto trigger Tj Tstg Max.operating temperaturerange Storage temperature R th( c-h ) Thermal resistance(junction to heatsink) Fm Mounting force wt Approximate weight V/μ s 1000 VA =12V , I A =1A At76% V DRM , T j =T j MAX 5 W 300 mA 3.0 V 0.25 V - 40 125 C - 40 150 C 0.011 K/ W 47 KN Double side cooled , clamping force 8.0 KN 35 1600 g SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR SEMICONDUCTOR