VISHAY SIZ702DT_12

New Product
SiZ702DT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
VDS (V)
Channel-1
and
Channel-2
30
RDS(on) ()
ID (A)
0.0120 at VGS = 10 V
16a
0.0145 at VGS = 4.5 V
16a
Qg (Typ.)
6.8 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
PowerPAIR®
• Notebook System Power
• POL
• Low Current DC/DC
6 x 3.7
Pin 1
3.73 mm
G1
1
D1
D1
2
D1
D1
3
G1
S1/D2
(Pin 7)
G2
6
S2
5
S2
N-Channel 1
MOSFET
6 mm
4
S1/D2
G2
Ordering Information:
SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Channel-1
Channel-2
30
± 20
Source Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
13.8b, c
11b, c
14b, c
11.2b, c
50
16a
18
16
PD
A
16a
3.7b, c
3.2b, c
mJ
27
17.4
30
19
3.9b, c
2.5b, c
4.5b, c
2.9b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
V
16a
16a
IDM
Pulsed Drain Current
Unit
W
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
Maximum Junction-to-Ambientb, f
t  10 s
Symbol
RthJA
RthJC
Channel-2
Typ.
Max.
Typ.
Max.
24
3.5
32
4.6
21
3.2
28
4.2
Unit
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2.
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State
Resistanceb
Forward Transconductanceb
VDS
VGS = 0 V, ID = 250 µA
Ch-1
Ch-2
VDS/TJ
ID = 250 µA
Ch-1
Ch-2
33
VGS(th)/TJ
ID = 250 µA
Ch-1
Ch-2
-5
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
Ch-2
IGSS
VDS = 0 V, VGS = ± 20 V
mV/°C
V
Ch-1
Ch-2
± 100
nA
VDS = 30 V, VGS = 0 V
Ch-1
Ch-2
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
Ch-1
Ch-2
5
VDS 5 V, VGS = 10 V
Ch-1
Ch-2
VGS = 10 V, ID = 13.8 A
Ch-1
Ch-2
0.010
0.012
VGS = 4.5 V, ID = 12.6 A
Ch-1
Ch-2
0.012
0.0145
VDS = 10 V, ID = 13.8 A
Ch-1
Ch-2
47
Ch-1
Ch-2
790
Ch-1
Ch-2
190
Ch-1
Ch-2
76
Ch-1
Ch-2
14
21
Ch-1
Ch-2
6.8
11
Ch-1
Ch-2
2.6
Ch-1
Ch-2
1.9
RDS(on)
gfs
V
2.5
IDSS
ID(on)
30
1
µA
20
A

S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 13.8 A
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = 15 V, VGS = 4.5 V, ID = 13.8 A
f = 1 MHz
Ch-1
Ch-2
pF
nC
0.4
2
4

Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
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Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Ch-1
Ch-2
15
25
Ch-1
Ch-2
12
20
Ch-1
Ch-2
20
30
tf
Ch-1
Ch-2
10
15
td(on)
Ch-1
Ch-2
10
15
Ch-1
Ch-2
12
20
Ch-1
Ch-2
20
30
Ch-1
Ch-2
10
15
Unit
Dynamica
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tr
td(off)
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 4.5 V, Rg = 1 
VDD = 15 V, RL = 1.5 
ID  10 A, VGEN = 10 V, Rg = 1 
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TC = 25 °C
IS = 10 A, VGS = 0 V
Ch-1
Ch-2
16
Ch-1
Ch-2
50
A
Ch-1
Ch-2
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
Ch-1
Ch-2
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
Ch-1
Ch-2
10
20
nC
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time
ta
Ch-1
Ch-2
11
Reverse Recovery Rise Time
tb
Ch-1
Ch-2
9
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 µs, duty cycle  2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
20
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
50
40
VGS = 3 V
30
20
12
TC = 25 °C
8
4
10
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
TC = - 55 °C
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.5
Transfer Characteristics
0.014
1200
1000
0.012
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
VGS = 4.5 V
0.010
VGS = 10 V
Ciss
800
600
400
Coss
0.008
200
Crss
0.006
0
0
10
20
30
40
50
60
0
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
R DS(on) - On-Resistance (Normalized)
ID = 13.8 A
VGS - Gate-to-Source Voltage (V)
30
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 24 V
4
2
1.6
ID = 13.8 A
1.5
VGS = 10 V; 4.5 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
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4
3
0.7
- 50
Qg - Total Gate Charge (nC)
0
25
50
75
100
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
6
9
12
15
-- 25
125
150
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
ID = 13.8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
10
TJ = 150 °C
TJ = 25 °C
1
0.020
TJ = 125 °C
0.015
TJ = 25 °C
0.010
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
50
1.9
1.8
1.7
40
1.6
ID = 250 µA
Power (W)
VGS(th) (V)
1.5
1.4
1.3
1.2
30
20
1.1
10
1.0
0.9
0.8
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.001
150
0.01
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
10
I D - Drain Current (A)
0.1
100 µs
1 ms
10 ms
1
100 ms
1 s, 10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
40
20
Power (W)
I D - Drain Current (A)
25
30
20
Package Limited
15
10
10
5
0
0
0
25
50
75
100
125
TC - Case Temperature (°C)
Current Derating*
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
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Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 67 °C/W
3. TJM - T A = PDMZthJA(t)
0.01
10 -4
4. Surface Mounted
Single Pulse
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
60
VGS = 10 V thru 4 V
16
I D - Drain Current (A)
I D - Drain Current (A)
50
40
VGS = 3 V
30
20
12
TC = 25 °C
8
4
10
TC = 125 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
3.5
Transfer Characteristics
1200
0.014
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1000
0.012
VGS = 4.5 V
0.010
VGS = 10 V
Ciss
800
600
400
Coss
0.008
200
Crss
0
0.006
0
10
20
30
40
50
0
60
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.7
10
R DS(on) - On-Resistance (Normalized)
ID = 13.8 A
VGS - Gate-to-Source Voltage (V)
30
8
VDS = 15 V
6
VDS = 7.5 V
VDS = 24 V
4
2
1.6
ID = 13.8 A
1.5
VGS = 10 V; 4.5 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
0
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
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8
12
15
0.7
- 50
-- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.030
ID = 13.8 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.025
10
TJ = 150 °C
TJ = 25 °C
1
0.020
TJ = 125 °C
0.015
TJ = 25 °C
0.010
0.005
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
50
1.9
1.8
1.7
40
1.6
ID = 250 µA
Power (W)
VGS(th) (V)
1.5
1.4
1.3
1.2
30
20
1.1
10
1.0
0.9
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
Limited by RDS(on)*
10
I D - Drain Current (A)
100
100 µs
1 ms
10 ms
1
100 ms
1 s, 10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
30
25
20
30
20
Power (W)
I D - Drain Current (A)
40
Package Limited
15
10
10
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ702DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 67 °C/W
3. TJM - T A = PDMZthJA(t)
0.01
10 -4
Single Pulse
4. Surface Mounted
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
10 -4
Single Pulse
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65525.
Document Number: 65525
S11-2379-Rev. B, 28-Nov-11
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11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
PowerPAIRTM 6 x 3.7 CASE OUTLINE
A
D
0.10 C
2X
Pin 5
K2
K2
Pin 4
Pin 4
Pin 5
Pin 6
K
L
Pin 6
E
E1
D1
K1
Pin #1 Ident
(Optional)
Pin 1
Pin 2
0.10 C
Pin 3
Pin 2
Pin 3
2X
E2
D1
Pin 1
e
b
BACK SIDE VIEW
b1
C
A1
C
A
0.08
c
0.10 C
Z
Z
MILLIMETERS
INCHES
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.70
0.75
0.80
0.028
0.030
0.032
A1
0.00
-
0.05
0.000
-
0.002
b
0.46
0.51
0.56
0.018
0.020
0.022
b1
0.20
0.25
0.38
0.008
0.010
0.015
C
0.18
0.20
0.23
0.007
0.008
0.009
D
3.65
3.73
3.81
0.144
0.147
0.150
D1
2.41
2.53
2.65
0.095
0.100
0.104
E
5.92
6.00
6.08
0.233
0.236
0.239
E1
2.62
2.67
2.72
0.103
0.105
0.107
E2
0.87
0.92
0.97
0.034
0.036
0.038
e
1.27 BSC
0.05 BSC
K
0.45 TYP.
0.018 TYP.
K1
0.66 TYP.
0.026 TYP.
K2
L
0.60 TYP.
0.38
0.43
0.024 TYP.
0.48
0.015
0.017
0.019
ECN: S-82772-Rev. B, 17-Nov-08
DWG: 5979
Document Number: 69028
17-Nov-08
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PAD Pattern
Vishay Siliconix
RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7
0.3520
(8.941)
0.0220
(0.559)
0.0190
(0.483)
0, 0.11
0.0170
(0.432)
0, 0.03
0.1070
(2.718)
0.1040
(2.642)
0.4390
(11.151)
0, 0
0.0220
(0.559)
0, - 0.0645
0.0170
(0.432)
0.0380
(0.965)
- 0.05, - 0.11
0, - 0.11
1
0.0500
(1.27)
Recommended PAD for PowerPAIR 6 x 3.7
Dimensions in inches (mm)
Keep-out 0.3520 (8.94) x 0.4390 (11.151)
Document Number: 65278
Revision: 04-Aug-09
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000