Datasheet - NIC Components Corp.

Surface Mount Schottky Barrier Rectifier Diode
NSD Series
FEATURES
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VOLTAGE: 20 TO 100 VOLTS, CURRENT: 1.0 & 2.0 AMPERE
FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS
FAST RESPONSE AND LOW FORWARD VOLTAGE
HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS)
EASY PICK AND PLACE
RoHS
Compliant
includes all homogeneous materials
*See Part Number System for Details
CATHODE
1.25~1.45
2.54~2.79
MECHANICAL DATA:
SIZE: SMA/DO-214AC
CASE: Molded epoxy
TERMINALS: Solder plated Copper alloy
POLARITY: Indicated by cathode band
STANDARD PACKAGING: 12mm tape (EIA-RS-481)
WEIGHT: 0.064 gram
3.99~4.50
4.93~5.28
1.98~2.29
.8~1.3
0.76~1.27
PART NUMBERING SYSTEM
0.1~0.2
NSD 14 TR 5K F
Dimensions (millimeters)
RoHS Compliant
Reel qty: (5K & 7.5K)
Tape and Reel
Voltage & Current Designator (See ratings tables)
Series
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half sine-wave
supreimposed on rated load (JEDEC method)
Symbol
VRRM
VRMS
VDC
Io
NSD12 NSD13 NSD14 NSD15 NSD16 NSD18 NSD19 NSD100 UNITS
20
30
40
50
60
80
90
100
Volts
14
21
28
35
42
56
64
71
Volts
20
30
40
50
60
80
90
100
Volts
IFSM
(Note 2)
RqJL
CJ
TJ, TSTG
TRR
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
Typical Reverse Recovery Time
110
1.0
Amps
30
Amps
25
°C/W
80
-55 ~ +150
15
70
pF
°C
nS
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
Characteristics
Maximum Forward Voltage at 1.0A DC
@TA=25°C
Maximum DC Reverse Current at
Rated DC Blocking Voltage (Note 3) @TA=100°C
NOTES:
Symbol
VF
IR
NSD12
NSD13
0.50
NSD14
NSD15 NSD16
0.65
0.5
10.0
NSD18 NSD19 NSD100 UNITS
0.85
Volts
mAmps
mAmps
1. Measured at 1.0MHz and applied average voltage of 4.0VDC.
2. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns.
3. Pulse width 300uS, 2% duty cycle.
®
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1
Surface Mount Schottky Barrier Rectifier Diode
NSD Series
RATING AND CHARACTERISTIC CURVES (NSD12 THRU NSD100)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
1.0
50
.8
NSD15, 16
.6
NSD12~14
.4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.2
0
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE FORWARD RECTIFIED
CURRENT, (A)
FIG. 1 - FORWARD CURRENT
DERATING CURVE
8.3ms Single Half Sine-Wave
(JEDEC Method) TJ=125OC
40
30
20
10
0
0
25
50
75
100
125
150
175
O
AMBIENT TEMPERATURE, ( C)
1
2
4
6
8
10
20
40
60
80
100
NUMBER OF CYCLES AT 60Hz
®
2
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Surface Mount Schottky Barrier Rectifier Diode
NSD Series
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings
Symbol
NSD22
NSD23
NSD24
NSD25
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
lo
2.0
Amps
IFSM
50
Amps
75.0
17.0
Typical Junction Capacitance (Note 1)
Rth-JA
Rth-JL
CJ
220
180
Operating and Storage Temperature Range
TJ/TSTG
-65 to +125/-65 to +150
-65 to +150
Typical Thermal Resistance
NSD26
UNITS
50
60
Volts
35
42
Volts
50
60
Volts
o
C/W
pF
o
C
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
Characteristics
Symbol
Maximum Forward Voltage at 2.0A DC
VF
Maximum DC Reverse Current at
@TA=25°C
Rated DC Blocking Voltage
@TA=100oC
NSD22
NSD23
NSD24
NSD25
0.50
NSD26
UNITS
0.70
Volts
0.5
IR
mAmps
20.0
10.0
mAmps
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.
Fig. 1 - Derated Curve for Output
Rectifier Current
Average Forward Current
Amperes
2.0
Fig. 2 - Typcial Junction Capacitance
500
Resistive or
Inductive Load
TJ=25°C
f=1.0MHz
Vsig=50mV p-p
1.5
NSD22 ~ NSD24
NSD22
&
NSD24
100
1.0
0.5
NSD22 ~ NSD24
NSD25 ~ NSD26
PCB Mounted on
0.2x0.2”(5.0x5.0mm)
Copper Pad Areas
10
0.1
1.0
10
100
Reverse Voltage, Volts
0
50 60 70 80 90 100 110 120 130 140 150 160
Lead Temperature,°C
Fig. 3 - Typical Reverse
Current Characteristics
Peak Forward Surge Current
Amperes
Fig. 4 - Maximum Non-Repetive Peak
Forward Surge Current
100
TA=125°C
CJ, Capacitnce, pF
10
1
TA=75°C
0.1
50
8.3ms Single Half Sine-Wave
(JEDEC Method) at Rated TL
40
Fig. 5 - Typical Instantaneous Forward
Characteristics
100
10
30
Pulse Width=300µS
1% Duty Cycle
20
TJ=125°C
10
0
TJ=25°C
1
1
10
TJ=150°C
100
Number of Cycles at 60Hz
TA=25°C
0.01
0.001
0.1
Percentage of Rated Peak
Reverse Voltage, %
0.01
0.2
0.4
0.6 0.8
1.0
1.2 1.4 1.6
Instantanesous Forward Voltage,
Volts
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Surface Mount Schottky Barrier Rectifier Diode
NSD Series
MAXIMUM RATINGS (At TA=250C unless otherwise noted)
Ratings
Symbol
NSD32
NSD33
NSD34
NSD35
NSD36
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
Volts
Maximum RMS Voltage
VRMS
14
21
28
35
42
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
lo
3.0
Amps
IFSM
80
Amps
55.0
17.0
Typical Junction Capacitance (Note 1)
Rth-JA
Rth-JL
CJ
Operating and Storage Temperature Range
TJ/TSTG
Typical Thermal Resistance
Volts
o
C/W
pF
-55 to +125/-55 to +150
o
-55 to +150
C
ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted)
Characteristics
Symbol
Maximum Forward Voltage at 3.0A DC
NSD32
NSD33
VF
Maximum DC Reverse Current at
@TA=25°C
Rated DC Blocking Voltage
@TA=100oC
NSD34
NSD35
0.50
NSD36
UNITS
0.60
Volts
0.5
IR
mAmps
20.0
10.0
mAmps
NOTE: 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC.
Resistive or Inductive Load
3.0
NSD35~ NSD36
2.5
NSD32 ~ NSD34
2.0
1.5
PCB Mounted on
0.55 x 0.55” (14 x 14mm)
Copper Pad Areas
1.0
0.5
0
Fig. 3 - Typcial Junction Capacitance
Fig. 2 - Maximum Non-Repetive Peak
Forward Surge Current
Peak Forward Surge
Current Amperes
Average Forward
Current Amperes
Fig. 1 - Derated Curve for Output
Rectifier Current
100
1000
80
60
40
100
20
0
1
10
100
NSD32 ~ NSD34
NSD35 ~ NSD36
Number of Cycles at 60Hz
50 60 70 80 90 100 110 120 130 140 150 160
10
Lead Temperature,°C
0.1
20
10
TJ = 125°C
TA=125°C
CJ, Capacitnce, pF
Pulse Width=300µS
1% Duty Cycle
TJ = 25°C
1
0.1
NSD32 ~ NSD34
NSD35 ~ NSD36
1
TA=75°C
0.1
10
100
Fig. 6 - Maximum Non-Repetive Peak
Forward Surge Current
100
10
1
0.01
0.01
0.1
1
10
100
t1 Pulse Duraton, sec.
0.01
0.01
TA=25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantanesous Forward Voltage,
Volts
Tanscient Theral Impedance,
°CW
Fig. 5 - Typical Reverse
Current Characteristics
30
TJ = 150°C
1.0
Reverse Voltage, Volts
Fig. 4 - Typical Instantaneous Forward
Characteristics
10
TJ=25°C
f=1.0MHz
Vsig=50mV p-p
At Rated TL
8.3ms Single Half Sine-wave
(JEDEC Method)
NSD32 ~ NSD34
NSD35 ~ NSD36
0.001
Percentage of Rated Peak
Reverse Voltage, %
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Surface Mount Diodes
NRD And NSD Series
TAPING AND MOUNTING SPECIFICATIONS
P0
P1
B
W
F
E
d
P
A
D1
D1
T
C
D
W1
RECOMMENDED LAND PATTERN
REEL QUANTITIES
Reel Size
Dimensions
(mm)
A
1.2-1.8
B
Reel Quantity
13 inch (330mm)
5,000 & 7,500 pcs
A
C
A
B
1.5-2.2
C
2.7 max.
Item
Symbol
Specifications (mm)
Specifications (inch)
Carrier Width
A
3.2 max.
.126 max.
Carrier Length
B
7.8 max.
.307 max.
Carrier Depth
C
4.5 max.
.177 max.
Sprocket Hole
d
1.5 ± 0.1
.059 ± .004
Reel Outside Diameter
D
178 ± 2.0
7.00 ± .079
Reel Inner Diameter
D1
50 min.
1.969 min.
Feed Hole Diameter
D2
13.0 ± 0.5
.512 ± .020
Sprocket Hole Position
E
1.75 ± 0.1
.069 ± .004
Punch Hole Position
F
5.5 ± 0.1
.217 ± .004
Punch Hole Pitch
P
4.0 ± 0.1
.157 ± .004
Sprocket Hole Pitch
P0
4.0 ± 0.1
.157 ± .004
Embossment Center
P1
2.0 ± 0.05
.079 ± .002
Overall Tape Thickness
T
1.1 max.
.043 max.
Tape Width
W
12.0 ± 0.3
.472 ± .012
Reel Width
W1
18.4 max.
.724 max.
NOTE: Devices are packed in accordance with EIA standard RS-481-A and specifications given above.
®
NIC COMPONENTS
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