Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING (250OC/10 SECONDS) EASY PICK AND PLACE RoHS Compliant includes all homogeneous materials *See Part Number System for Details CATHODE 1.25~1.45 2.54~2.79 MECHANICAL DATA: SIZE: SMA/DO-214AC CASE: Molded epoxy TERMINALS: Solder plated Copper alloy POLARITY: Indicated by cathode band STANDARD PACKAGING: 12mm tape (EIA-RS-481) WEIGHT: 0.064 gram 3.99~4.50 4.93~5.28 PART NUMBERING SYSTEM NRD 4004 TR -5K F RoHS Compliant Reel qty: (5K & 7.5K) Tape and Reel Voltage designator (See table below) Series 1.98~2.29 .8~1.3 0.76~1.27 0.1~0.2 DIMENSIONS (mm) MAXIMUM RATINGS (At TA=250C unless otherwise noted) Ratings Maximum Recurrent Peak Reverse voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TA=75°C Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load (JEDEC method) Symbol NRD4001 NRD4002 NRD4003 NRD4004 NRD4005 NRD4007 UNITS VRRM 50 100 200 400 600 1000 Volts VRMS 35 70 140 280 420 700 Volts VDC 50 100 200 400 600 1000 Volts Io 1.0 Amps IFSM 30 Amps ELECTRICAL CHARACTERISTICS (At TA=250C unless otherwise noted) Characteristics Symbol NRD4001 NRD4002 NRD4003 NRD4004 NRD4005 NRD4007 UNITS Maximum Forward Voltage at 1.0A DC VF 1.1 Amps Maximum Full Load Reverse Current 30 µAmps Full Cycle Average @TA=75°C IR @TA=25°C 5.0 µAmps Maximum DC Reverse Current at Rated DC Blocking Voltage @TA=125°C 50 µAmps Maximum Thermal Resistance (Note 1) RqJL 30 °C/W Typical Junction Capacitance (Note 2) CJ 15 pF Operating and Storage Temperature Range TJ, TSTG -60 ~ +150°C °C Maximum Reverse Recovery Time (Note 3) trr 2.5 µS NOTES: 1. Thermal resistance junction to terminal, 5mm2 (0.013 mm Thick) copper land patterns. 2. Measured at 1.0 MHz and applied average voltage of 4.0VDC. 3. Reverse recovery test conditions: If=0.5A, IR=1.0A, trr=0.25A ® NIC COMPONENTS www.niccomp.com www.lowESR.com www.RFpassives.com 1 Surface Mount Silicon Rectifier Diode RATINGS AND CHARACTERISTICS CURVES (NRD4001 THRU 4007 NRD Series Typical Instanteous Forward Charateristics per Element 100 Derating Curve for Output Rectified Current Instanteous Forward Current (Amps) Average Forward Current (Amps) 3.0 2.5 Single Phase Half Wave 60Hz Resistive or Inductive Load PCB Mounted 0n 0.315"x0.315" (8.0x8.0mm) copper Pad Areas 2.0 1.5 1.0 0.5 0 75°C 50°C 100°C Temperature (°C) 0°C Tj=25°C Pulse Width=300µS 2% Duty Cycle 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.4 150°C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instanteous Forward Voltage (Volts) Typical Peak Reverse Characteristics 10 Tj=100°C 1.0 Tj=75°C 0.1 Tj=25°C 0.01 0.001 100 0 Transient Thermal Impedance 20 15 10 5 0 1 2 6 10 20 40 60 100 Number of Cycles at 60Hz Typcial Junction Capacitance per Element 50 20 10 Units Mounted on 20in (5.4mm ) +0.5mil inches (0.013mm) Thick Copper Land Areas 3 3 2 1 0.01 25 100 50 5 30 Maximum Non-repetitive Peak ForwardSurge Current 20 40 60 80 100 Percentage of Peak Reverse Voltage Capacitance (pF) Thermal Impedance (°C/W) Forward Surge Current (Amps pk) (Half Sine-wave) Instanteous Reverse Current (µA) 100 Tj=25°C f=1MHz Vsig=50mVp-p 20 10 2 1.0 10 0.1 Heating Time (Seconds) 100 1 0.1 1.0 10 100 Reverse Voltage (Volts) 1000 ® 2 NIC COMPONENTS www.niccomp.com www.lowESR.com www.RFpassives.com