ne. ,O 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Bi-Directional Tried* Thyristor ISOLATED TAB SC140 SC142 SC147 NONISOLATEDTAB SC141 SC143 SC146 SC149 SC151 Power Pac Triacs 6A to ISA RMS Up to 600 Volts Isolated and Non-Isolated Tab FEATURES: POWER-GLAS™ passivated silicon chip for maximum reliability. Very low off-state (leakage) current at room and elevated temperatures. Inherent immunity from non-repetitive transient voltage damage (max. critical rate-of-rise of on-state current subsequent to voltage breakover triggering, di/dt = 10 A/jusec.). Low on-state voltage at high current levels. Excellent surge current capability. 1600 volts RMS Surge Isolation Voltage on Isolated Triacs. Selected types available from factory for use where circuit requires operation: — with popular zero voltage triggering IC's - at 400 Hz — with low gate trigger current — at higher voltage levels — at higher commutating dv/dt levels POWER PAC PACKAGE • Meets JEDEC TO-220AB specifications. • Round leads — greatly simplifies assembly. • Six standard lead forming configurations available from factory (including TO-66 compatibility.) Rugged, industry-proven packaging. Molded Silicone Encapsulation Tab Coin Power Glas Pallet Plastic Lock 3 at* ISOLATED (RED) NON-ISOLATED (BLUE) Quality Semi-Conductors PICTORIAL ASSEMBLY ISOLATED TAB NON-ISOLATED TAB SC140, 2. 7 SC141, 3. 6, 9, SC151 MAXIMUM ALLOWABLE RATINGS RMS ON-STATE CURRENT, TYPE 'T(RMS) (1) AMPERES PEAK ONE FULL CYCLE SURGE (NON-REP) ON-STATE CURRENT, ITSM AMPERES REPETITIVE PEAK OFF-STATE VOLTAGE. VDRM(2) I 2 t FOR FUSING FOR TIMES AT(3) (RMS AMPERE)2 SECONDS 1.0 MILLISECOND (RMS AMPERE)2 SECONDS, 8.3 MILLISECONDS B 0 E M 50 Hz 60 Hz VOLTS VOLTS VOLTS VOLTS AMPERES AMPERES 400 400 400 500 500 500 600 600 600 74 104 104 80 110 110 18 20 20 26.5 50 SO 400 400 400 400 400 500 500 500 500 500 600 600 74 110 110 110 110 80 120 120 120 120 18 20 20 20 20 26.5 60 60 60 60 ISOLATED TAB 6.5 SC140 8 SCI 42 10 SCI 47 NON-ISOLATED TAB SC141 6 8 SCI 43 10 SCI 46 SCI 49 12 15 SCI 51 200 200 200 1 200 200 200 200 200 I 600 600 600 Peak Gate Power Dissipation, PGM (4) Average Gate Power Dissipation, PG(AV) Peak Gate Current, I GM (4) Peak Gate Voltage, VGM (4) Storage Temperature, T stg Operating Temperature, Tj Surge Isolation Voltage (5) 10 Watts for 10 Microseconds (See Chart 4) 0.5 Watts See Chart 4 See Chart 4 -40°C to +125°C -40 °C to +100 °C 160° Volts MAIN TERMINAL 02 OFF STATE E t1 ~-\v MT2- 3«o QUADRANT >N -STATE <T2 + £ QUADRANT 7 / ""*^X ST^ 1 ON-STATE TYPICAL CHARACTERISTICS VOLT-AMPERES 3< GATE Ol MAIN TERMINAL TERMINAL ARRANGEMENT NOTES: 1. Ai the case reference point (see outline drawing) temperature of 80°C maximum (except 75°C maximum for SCI 42 and SCI 49) and 360° conduction. 2. Ratings apply for zero gate voltage only. Ratings apply for either polarity of main terminal 2 voltage referenced to main terminal 1, 3. Ratings apply for either polarity of main terminal 2 referenced to main terminal 1, 4. Ratings apply for either polarity of gate terminal referenced to mum terminal 1. 5. Isolated tab triacs only. Rating applies from main terminals 1 and 2 and gate terminal to device mounting surface. Test voltage ii 50 or 60 Hz sinusoidal wave form applied for one minute. Rating applies over the entire device operating temperature range. NON-ISOLATED TAB SC141, 3, 6, 9, SC151 ISOLATED TAB SC140, 2, 7 CHARACTERISTICS TEST SYMBOL Repetitive Peak OffState Current IDRM Peak On-State Voltage SCI 40 SCI 41 SCI 42 SC143 SCI 46 SCI 47 SC149 SC151 VTM Critical Rate-of-Rise of Off-State Voltage (Higher values may cause device switching) SC140, SC141 SC142, SC143 SC146.SC147 SCI 49 SCI 51 Critical Rate-of-Rise of Commutating Off-State Voltage (Commutating dv/dt) dv/dt DC Gate Trigger Current dv/dt (c) WIN. _ _ - - - - - - - - - - - - - - 30 50 100 100 100 4 - 100 150 150 200 250 TEST CONDITIONS UNITS 1 Tc = +25°C, ITM = 1 msec., Wide Pulse, Duty Cycle < 2% ITM = 9.2 A Peak ITM = 8.5 A Peak ITM = 11.5 A Peak ITM = 11.5 A Peak ITM = 1 4 A Peak ITM = 14 A Peak ITM = 17 A Peak ITM = 21 A Peak 1 Volts//nsec Tc = +100°C, Rated V DRM Gate Open Circuited Exponential Voltage Waveform 1 Volts/Aisec IT(RMS) = Rated Maximum Allowable RMS On-State Current, V DRM = Maximum Rated Peak Off-State Voltage, Gate Open Circuited. 0.1 0.5 1.85 .83 .75 .55 .65 .50 .65 1.52 _ — __ — - mAdc IGT V D = 12 Vdc - 50 50 50 80 80 80 Vdc VGT MT2+ Gate + MT2- Gate MT2+ Gate MT2+ Gate + MT2- Gate MT2+ Gate V D = 12 Vdc 100 100 50 50 50 25 VGD — _ - MT2+ MT2MT2+ MT2+ MT2MT2+ 2.5 2.5 2.5 3.5 3.5 3.5 Vdc Gate Gate Gate Gate Gate Gate + + - TRIGGER MODE MT2+ MT2MT2+ MT2- Gate Gate Gate Gate + + Ohms Ohms Ohms Ohms Ohms Ohms TC +25°C -40°C 2 RL TRIGGER MODE 0.2 1,4 2 RL TRIGGER MODE _ REF. NOTE VDRM = Maximum Allowable Repetitive Off-State Voltage Rating Gate Open Circuited Tc = +25°C Tc = +100°C Volts - DC Gate Non-Trigger Voltage MAX. mA _ - DC Gate Trigger Voltage TYP. 100 100 50 50 50 25 Ohms Ohms Ohms Ohms Ohms Ohms TC +25°C -40°C RL TC 1000 Ohms +100°C 2,3