NTE Electronics 1N914B Datasheet

1N914, 1N914A, 1N914B
Silicon Rectifier Diode
Ultra Fast Switch
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Average Rectified Forward Current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Recurrent Peak Forward Current, If . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Non−Repetitive Peak Forward Surge Current, IFSM
Pulse Width = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Pulse Width = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300C/W
Note 1. Stresses exceeding the “Absolute Maximum Ratings” may damage the device. The device
may not function or be operable above the recommended operating conditions and stressing
the parts to these levels is not recommended. In addition, extended exposure to stresses
above the recommended operating conditions may effect device reliability. The absolute
maximum ratings are stress ratings only.
Electrical Characteristics: (TA = +25C, Note 2 unless otherwise specified)
Parameter
Min
Typ
Max
Unit
IR = 100A
100
−
−
V
IR = 5A
75
−
−
V
IF = 10mA
−
−
1
V
1N914A
IF = 20mA
−
−
1
V
1N914B
IF = 5mA
0.62
−
0.72
V
IF = 100mA
−
−
1
V
VR = 20V
−
−
0.025
A
−
−
50
A
VR = 75V
−
−
5
A
Breakdown Voltage
Forward Voltage Drop
1N914
Reverse Leakage Current
Symbol
VR
VF
IR
Test Conditions
TA = +150C
Total Capacitance
CT
VR = 0, f = 1MHz
−
−
4
pF
Reverse Recovery Time
trr
IF = 10mA, VR = 6V (600mA), Irr 1mA,
RL = 100
−
−
4
ns
Note 2. Non−recurrent square wave PW = 8.3ms.
1.000
(25.4)
Min
.200 (5.08)
Max
.022 (.509) Dia Max
.090 (2.28)
Dia Max
Color Band Denotes Cathode