LL5711/LL6263 Schottky Barrier Diode MINI MELF Features For general purpose applications. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low Dimension in millimeters forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Absolute Maximum Ratings (Tj=25℃) Parameter Part Symbol Value Unit LL5711 VRRM 70 V LL6263 VRRM 60 V Maximum single cycle surge 10us square wave IFSM 2.0 A Power dissipation Ptot 400 mW Maximum junction temperature Tj 125 ℃ Storage temperature range TS -55~+150 ℃ Peak inverse voltage Electrical Characteristics(Tj=25℃) Parameter Reverse breakdown voltage Symbol V(BR)R Leakage current IR Forward voltage drop VF Junction capacitance Ctot Reverse recovery time trr Test Conditions Part Min Typ Max Unit LL5711 70 - - V LL6263 60 - - V VR=50V - - 200 nA IF=1mA - - 0.41 V IF=15mA - - 1.0 V LL5711 - - 2.0 pF LL6263 - - 2.2 pF - - 1.0 ns IR=10μA (pulsed) VR=0V, f=1MHz IF= IR=5mA recover to 0.1 IR Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. http://www.luguang.cn mail:[email protected] LL5711/LL6263 Schottky Barrier Diode IF – Forward current (mA) IF – Forward current (mA) Characteristics (Tj=25℃ unless otherwise specified) VF – Forward voltage (V) VF – Forward voltage (V) Figure 1. Typical variation of forward current Figure 2. Typical forward conduction curve IR – Reverse current (uA) CT – Typical capacitance (pF) vs. forward voltage VR – Reverse voltage (V) VR – Reverse voltage (V) Figure 3. Typical variation of reverse current at Figure 4. Typical capacitance curve as a function various temperatures of reverse voltage http://www.luguang.cn mail:[email protected]